CN105632943B - 芯片的超薄嵌入式封装方法 - Google Patents
芯片的超薄嵌入式封装方法 Download PDFInfo
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- CN105632943B CN105632943B CN201610088006.8A CN201610088006A CN105632943B CN 105632943 B CN105632943 B CN 105632943B CN 201610088006 A CN201610088006 A CN 201610088006A CN 105632943 B CN105632943 B CN 105632943B
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000012856 packing Methods 0.000 title claims abstract description 30
- 239000011159 matrix material Substances 0.000 claims abstract description 77
- 238000009434 installation Methods 0.000 claims abstract description 28
- 238000004806 packaging method and process Methods 0.000 claims abstract description 21
- 229910000679 solder Inorganic materials 0.000 claims abstract description 14
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000000053 physical method Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims 1
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- 230000008569 process Effects 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
Abstract
Description
Claims (11)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610088006.8A CN105632943B (zh) | 2016-02-17 | 2016-02-17 | 芯片的超薄嵌入式封装方法 |
PCT/CN2016/106615 WO2017140138A1 (zh) | 2016-02-17 | 2016-11-21 | 芯片的超薄嵌入式封装方法及封装体 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610088006.8A CN105632943B (zh) | 2016-02-17 | 2016-02-17 | 芯片的超薄嵌入式封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105632943A CN105632943A (zh) | 2016-06-01 |
CN105632943B true CN105632943B (zh) | 2018-05-18 |
Family
ID=56047744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610088006.8A Active CN105632943B (zh) | 2016-02-17 | 2016-02-17 | 芯片的超薄嵌入式封装方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN105632943B (zh) |
WO (1) | WO2017140138A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105632943B (zh) * | 2016-02-17 | 2018-05-18 | 上海伊诺尔信息技术有限公司 | 芯片的超薄嵌入式封装方法 |
CN107612226B (zh) * | 2017-10-31 | 2024-05-03 | 珠海格力电器股份有限公司 | 表面贴装结构、表面贴装方法、电机及表面贴装芯片 |
CN107995392A (zh) * | 2017-11-28 | 2018-05-04 | 信利光电股份有限公司 | 一种多摄像头模组及其加工方法 |
CN108012055A (zh) * | 2017-11-28 | 2018-05-08 | 信利光电股份有限公司 | 一种多摄像头模组 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1302455A (zh) * | 1998-05-07 | 2001-07-04 | 美国3M公司 | 层叠的集成电路封装 |
CN101315939A (zh) * | 2007-05-30 | 2008-12-03 | 育霈科技股份有限公司 | 具有晶粒接收开孔的芯片尺寸影像传感器及其制造方法 |
CN101752338A (zh) * | 2008-12-11 | 2010-06-23 | 三星电子株式会社 | 球栅阵列封装结构及其封装工艺 |
CN102903682A (zh) * | 2011-07-28 | 2013-01-30 | 株式会社吉帝伟士 | 半导体器件、通过垂直层叠半导体器件配置的半导体模块结构及其制造方法 |
CN103779319A (zh) * | 2012-10-19 | 2014-05-07 | 英飞凌科技股份有限公司 | 具有集成天线的半导体封装及其形成方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013002938A (ja) * | 2011-06-16 | 2013-01-07 | Seiko Epson Corp | センサーデバイス、およびその製造方法 |
CN105632943B (zh) * | 2016-02-17 | 2018-05-18 | 上海伊诺尔信息技术有限公司 | 芯片的超薄嵌入式封装方法 |
-
2016
- 2016-02-17 CN CN201610088006.8A patent/CN105632943B/zh active Active
- 2016-11-21 WO PCT/CN2016/106615 patent/WO2017140138A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1302455A (zh) * | 1998-05-07 | 2001-07-04 | 美国3M公司 | 层叠的集成电路封装 |
CN101315939A (zh) * | 2007-05-30 | 2008-12-03 | 育霈科技股份有限公司 | 具有晶粒接收开孔的芯片尺寸影像传感器及其制造方法 |
CN101752338A (zh) * | 2008-12-11 | 2010-06-23 | 三星电子株式会社 | 球栅阵列封装结构及其封装工艺 |
CN102903682A (zh) * | 2011-07-28 | 2013-01-30 | 株式会社吉帝伟士 | 半导体器件、通过垂直层叠半导体器件配置的半导体模块结构及其制造方法 |
CN103779319A (zh) * | 2012-10-19 | 2014-05-07 | 英飞凌科技股份有限公司 | 具有集成天线的半导体封装及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2017140138A1 (zh) | 2017-08-24 |
CN105632943A (zh) | 2016-06-01 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20190619 Address after: Room 301, Room 3, Building 2, No. 3576 Zhaolou Road, Minhang District, Shanghai, 201112 Patentee after: Shanghai Inore Information Electronics Co.,Ltd. Address before: Room 1001, No. 1628 Suzhao Road, Minhang District, Shanghai 201100 Patentee before: SHANGHAI ETERNAL INFORMATION TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address |
Address after: Room 301, Room 3, Building 2, No. 3576 Zhaolou Road, Minhang District, Shanghai, 201112 Patentee after: Lianxin (Shanghai) Microelectronics Technology Co.,Ltd. Country or region after: China Address before: Room 301, Room 3, Building 2, No. 3576 Zhaolou Road, Minhang District, Shanghai, 201112 Patentee before: Shanghai Inore Information Electronics Co.,Ltd. Country or region before: China |