CN105612606B - 晶片的清洗方法 - Google Patents

晶片的清洗方法 Download PDF

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Publication number
CN105612606B
CN105612606B CN201480054698.3A CN201480054698A CN105612606B CN 105612606 B CN105612606 B CN 105612606B CN 201480054698 A CN201480054698 A CN 201480054698A CN 105612606 B CN105612606 B CN 105612606B
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China
Prior art keywords
protective film
wafer
cleaning
chemical solution
mentioned
Prior art date
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Active
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CN201480054698.3A
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English (en)
Chinese (zh)
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CN105612606A (zh
Inventor
斋藤真规
斋尾崇
公文创
公文创一
荒田忍
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Central Glass Co Ltd
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Central Glass Co Ltd
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Publication date
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Publication of CN105612606A publication Critical patent/CN105612606A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/38—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3808—Acyclic saturated acids which can have further substituents on alkyl
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Emergency Medicine (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN201480054698.3A 2013-10-04 2014-09-08 晶片的清洗方法 Active CN105612606B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013209535A JP6191372B2 (ja) 2013-10-04 2013-10-04 ウェハの洗浄方法
JP2013-209535 2013-10-04
PCT/JP2014/073660 WO2015049956A1 (ja) 2013-10-04 2014-09-08 ウェハの洗浄方法

Publications (2)

Publication Number Publication Date
CN105612606A CN105612606A (zh) 2016-05-25
CN105612606B true CN105612606B (zh) 2018-09-21

Family

ID=52778552

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480054698.3A Active CN105612606B (zh) 2013-10-04 2014-09-08 晶片的清洗方法

Country Status (6)

Country Link
US (1) US10037882B2 (enExample)
JP (1) JP6191372B2 (enExample)
KR (1) KR102232715B1 (enExample)
CN (1) CN105612606B (enExample)
TW (1) TWI625322B (enExample)
WO (1) WO2015049956A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4743340B1 (ja) * 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
KR102056139B1 (ko) * 2015-07-13 2019-12-16 후지필름 가부시키가이샤 패턴 구조의 처리 방법, 전자 디바이스의 제조 방법 및 패턴 구조의 붕괴 억제용 처리액
US10848956B2 (en) 2015-10-09 2020-11-24 Nec Corporation Dedicated core networks (DCN) selection
WO2018058341A1 (en) * 2016-09-28 2018-04-05 Dow Global Technologies Llc Sulfoxide/glycol ether based solvents for use in the electronics industry
JP7452782B2 (ja) 2017-03-24 2024-03-19 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 表面処理方法およびそのための組成物
JP6963166B2 (ja) * 2017-04-17 2021-11-05 セントラル硝子株式会社 ウェハの表面処理方法及び該方法に用いる組成物
IL275626B2 (en) 2018-01-05 2024-07-01 Fujifilm Electronic Mat Usa Inc Surface treatment compositions and methods
JP7274919B2 (ja) * 2019-04-11 2023-05-17 東京応化工業株式会社 洗浄液、及び金属レジストを備えた支持体の洗浄方法
EP4155375A4 (en) * 2020-05-21 2024-07-24 Central Glass Company, Limited SURFACE TREATMENT METHOD FOR SEMICONDUCTOR SUBSTRATES AND SURFACE TREATMENT AGENT COMPOSITION
JP7727202B2 (ja) * 2020-05-21 2025-08-21 セントラル硝子株式会社 半導体基板の表面処理方法、及び表面処理剤組成物
CN116970446B (zh) * 2023-09-22 2024-01-09 山东天岳先进科技股份有限公司 碳化硅单晶材料amb覆铜的前处理溶液、产品及应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012096133A1 (ja) * 2011-01-12 2012-07-19 セントラル硝子株式会社 保護膜形成用薬液
CN102971835A (zh) * 2010-06-30 2013-03-13 中央硝子株式会社 保护膜形成用化学溶液以及晶片表面的清洗方法
CN103283004A (zh) * 2010-12-28 2013-09-04 中央硝子株式会社 晶片的清洗方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838425B2 (en) 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
JP4743340B1 (ja) 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
US8828144B2 (en) 2010-12-28 2014-09-09 Central Grass Company, Limited Process for cleaning wafers
US20120164818A1 (en) 2010-12-28 2012-06-28 Central Glass Company, Limited Process for Cleaning Wafers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102971835A (zh) * 2010-06-30 2013-03-13 中央硝子株式会社 保护膜形成用化学溶液以及晶片表面的清洗方法
CN103283004A (zh) * 2010-12-28 2013-09-04 中央硝子株式会社 晶片的清洗方法
WO2012096133A1 (ja) * 2011-01-12 2012-07-19 セントラル硝子株式会社 保護膜形成用薬液

Also Published As

Publication number Publication date
US20160254140A1 (en) 2016-09-01
TWI625322B (zh) 2018-06-01
KR102232715B1 (ko) 2021-03-26
JP2015076418A (ja) 2015-04-20
TW201524942A (zh) 2015-07-01
CN105612606A (zh) 2016-05-25
US10037882B2 (en) 2018-07-31
JP6191372B2 (ja) 2017-09-06
KR20160067090A (ko) 2016-06-13
WO2015049956A1 (ja) 2015-04-09

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