KR102232715B1 - 웨이퍼의 세정 방법 - Google Patents

웨이퍼의 세정 방법 Download PDF

Info

Publication number
KR102232715B1
KR102232715B1 KR1020167006434A KR20167006434A KR102232715B1 KR 102232715 B1 KR102232715 B1 KR 102232715B1 KR 1020167006434 A KR1020167006434 A KR 1020167006434A KR 20167006434 A KR20167006434 A KR 20167006434A KR 102232715 B1 KR102232715 B1 KR 102232715B1
Authority
KR
South Korea
Prior art keywords
protective film
wafer
cleaning
water
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167006434A
Other languages
English (en)
Korean (ko)
Other versions
KR20160067090A (ko
Inventor
마사노리 사이토
다카시 사이오
소이치 구몬
시노부 아라타
Original Assignee
샌트랄 글래스 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 샌트랄 글래스 컴퍼니 리미티드 filed Critical 샌트랄 글래스 컴퍼니 리미티드
Publication of KR20160067090A publication Critical patent/KR20160067090A/ko
Application granted granted Critical
Publication of KR102232715B1 publication Critical patent/KR102232715B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/38—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3808—Acyclic saturated acids which can have further substituents on alkyl
    • C11D11/0047—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020167006434A 2013-10-04 2014-09-08 웨이퍼의 세정 방법 Active KR102232715B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013209535A JP6191372B2 (ja) 2013-10-04 2013-10-04 ウェハの洗浄方法
JPJP-P-2013-209535 2013-10-04
PCT/JP2014/073660 WO2015049956A1 (ja) 2013-10-04 2014-09-08 ウェハの洗浄方法

Publications (2)

Publication Number Publication Date
KR20160067090A KR20160067090A (ko) 2016-06-13
KR102232715B1 true KR102232715B1 (ko) 2021-03-26

Family

ID=52778552

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167006434A Active KR102232715B1 (ko) 2013-10-04 2014-09-08 웨이퍼의 세정 방법

Country Status (6)

Country Link
US (1) US10037882B2 (enExample)
JP (1) JP6191372B2 (enExample)
KR (1) KR102232715B1 (enExample)
CN (1) CN105612606B (enExample)
TW (1) TWI625322B (enExample)
WO (1) WO2015049956A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4743340B1 (ja) * 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
JP6533576B2 (ja) * 2015-07-13 2019-06-19 富士フイルム株式会社 パターン構造の処理方法、電子デバイスの製造方法およびパターン構造の倒壊抑制用処理液
CN113115412A (zh) 2015-10-09 2021-07-13 日本电气株式会社 专用核心网（dcn）选择
WO2018058341A1 (en) * 2016-09-28 2018-04-05 Dow Global Technologies Llc Sulfoxide/glycol ether based solvents for use in the electronics industry
EP3602606B1 (en) 2017-03-24 2024-06-26 FUJIFILM Electronic Materials U.S.A., Inc. Surface treatment methods and compositions therefor
JP6963166B2 (ja) * 2017-04-17 2021-11-05 セントラル硝子株式会社 ウェハの表面処理方法及び該方法に用いる組成物
EP3735325A4 (en) 2018-01-05 2021-03-03 FUJIFILM Electronic Materials U.S.A, Inc. SURFACE TREATMENT COMPOSITIONS AND PROCEDURES
JP7274919B2 (ja) * 2019-04-11 2023-05-17 東京応化工業株式会社 洗浄液、及び金属レジストを備えた支持体の洗浄方法
US20230282474A1 (en) * 2020-05-21 2023-09-07 Central Glass Company, Limited Surface treatment method for semiconductor substrates and surface treatment agent composition
WO2021235476A1 (ja) * 2020-05-21 2021-11-25 セントラル硝子株式会社 半導体基板の表面処理方法、及び表面処理剤組成物
CN116970446B (zh) * 2023-09-22 2024-01-09 山东天岳先进科技股份有限公司 碳化硅单晶材料amb覆铜的前处理溶液、产品及应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838425B2 (en) 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
JP4743340B1 (ja) 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
JP5630385B2 (ja) * 2010-06-30 2014-11-26 セントラル硝子株式会社 保護膜形成用薬液及びウェハ表面の洗浄方法
US8828144B2 (en) 2010-12-28 2014-09-09 Central Grass Company, Limited Process for cleaning wafers
JP2013118347A (ja) 2010-12-28 2013-06-13 Central Glass Co Ltd ウェハの洗浄方法
US20120164818A1 (en) 2010-12-28 2012-06-28 Central Glass Company, Limited Process for Cleaning Wafers
JP2013102109A (ja) * 2011-01-12 2013-05-23 Central Glass Co Ltd 保護膜形成用薬液

Also Published As

Publication number Publication date
JP6191372B2 (ja) 2017-09-06
CN105612606B (zh) 2018-09-21
US10037882B2 (en) 2018-07-31
TWI625322B (zh) 2018-06-01
KR20160067090A (ko) 2016-06-13
CN105612606A (zh) 2016-05-25
JP2015076418A (ja) 2015-04-20
US20160254140A1 (en) 2016-09-01
WO2015049956A1 (ja) 2015-04-09
TW201524942A (zh) 2015-07-01

Similar Documents

Publication Publication Date Title
KR102232715B1 (ko) 웨이퍼의 세정 방법
KR101535200B1 (ko) 보호막 형성용 약액
KR101370994B1 (ko) 보호막 형성용 약액 및 웨이퍼 표면의 세정 방법
KR101657572B1 (ko) 발수성 보호막 및 보호막 형성용 약액
KR101612433B1 (ko) 발수성 보호막 형성용 약액 및 이것을 사용한 웨이퍼의 세정 방법
JP6051562B2 (ja) 撥水性保護膜形成用薬液
TWI518153B (zh) Protective film forming liquid
JP6428802B2 (ja) 保護膜形成用薬液
JP2012238844A (ja) ウェハの洗浄方法
JP2017157863A (ja) ウェハの洗浄方法
CN102598221B (zh) 保护膜形成用化学溶液
CN102598221A (zh) 保护膜形成用化学溶液

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20160310

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190709

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200730

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20210308

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210322

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210323

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240314

Start annual number: 4

End annual number: 4