CN105577145B - 半导体集成电路器件 - Google Patents

半导体集成电路器件 Download PDF

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Publication number
CN105577145B
CN105577145B CN201510973927.8A CN201510973927A CN105577145B CN 105577145 B CN105577145 B CN 105577145B CN 201510973927 A CN201510973927 A CN 201510973927A CN 105577145 B CN105577145 B CN 105577145B
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CN
China
Prior art keywords
voltage
circuit
signal
ground voltage
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201510973927.8A
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English (en)
Chinese (zh)
Other versions
CN105577145A (zh
Inventor
菅野雄介
田中雄
田中一雄
丰岛俊辅
户羽健夫
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN105577145A publication Critical patent/CN105577145A/zh
Application granted granted Critical
Publication of CN105577145B publication Critical patent/CN105577145B/zh
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN201510973927.8A 2005-04-19 2006-04-19 半导体集成电路器件 Expired - Fee Related CN105577145B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP120605/2005 2005-04-19
JP2005120605A JP2006303753A (ja) 2005-04-19 2005-04-19 半導体集積回路装置
CN200610066681.7A CN1855725B (zh) 2005-04-19 2006-04-19 半导体集成电路器件

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200610066681.7A Division CN1855725B (zh) 2005-04-19 2006-04-19 半导体集成电路器件

Publications (2)

Publication Number Publication Date
CN105577145A CN105577145A (zh) 2016-05-11
CN105577145B true CN105577145B (zh) 2018-10-02

Family

ID=37107909

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201510973927.8A Expired - Fee Related CN105577145B (zh) 2005-04-19 2006-04-19 半导体集成电路器件
CN200610066681.7A Expired - Fee Related CN1855725B (zh) 2005-04-19 2006-04-19 半导体集成电路器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200610066681.7A Expired - Fee Related CN1855725B (zh) 2005-04-19 2006-04-19 半导体集成电路器件

Country Status (5)

Country Link
US (3) US7532054B2 (https=)
JP (1) JP2006303753A (https=)
KR (1) KR20060110220A (https=)
CN (2) CN105577145B (https=)
TW (1) TWI423395B (https=)

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JP3796034B2 (ja) * 1997-12-26 2006-07-12 株式会社ルネサステクノロジ レベル変換回路および半導体集積回路装置
JP2006303753A (ja) * 2005-04-19 2006-11-02 Renesas Technology Corp 半導体集積回路装置
JP4846272B2 (ja) 2005-06-07 2011-12-28 ルネサスエレクトロニクス株式会社 半導体集積回路装置
TW200820571A (en) * 2006-10-27 2008-05-01 Fitipower Integrated Tech Inc Driving device
ITMI20062237A1 (it) * 2006-11-22 2008-05-23 St Microelectronics Srl Circuito elettrico con protezione dalle sovratensioni
JP5172233B2 (ja) * 2007-07-27 2013-03-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US20090160485A1 (en) * 2007-12-19 2009-06-25 Texas Instruments Incorporated Providing Higher-Swing Output Signals When Components Of An Integrated Circuit Are Fabricated Using A Lower-Voltage Process
US20090179247A1 (en) * 2008-01-16 2009-07-16 Renesas Technology Corp. Semiconductor device
JP5259246B2 (ja) 2008-05-09 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置
JP5816407B2 (ja) 2009-02-27 2015-11-18 ルネサスエレクトロニクス株式会社 半導体集積回路装置
EP2278712A1 (fr) * 2009-07-01 2011-01-26 STMicroelectronics (Rousset) SAS Circuit intégré comprenant un circuit tampon haute tension large bande
US8018251B1 (en) * 2010-06-01 2011-09-13 Pmc-Sierra, Inc. Input/output interfacing with low power
JP5618772B2 (ja) * 2010-11-11 2014-11-05 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
JP2012234601A (ja) * 2011-05-06 2012-11-29 Toshiba Corp 不揮発性半導体メモリ
JP5917858B2 (ja) * 2011-08-29 2016-05-18 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US8704579B2 (en) * 2011-12-30 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Level shifting circuit and semiconductor device using the same
US9571092B2 (en) * 2012-02-03 2017-02-14 Longitude Semiconductor S.A.R.L. Cascaded high voltage switch architecture
JP5988062B2 (ja) * 2012-09-06 2016-09-07 パナソニックＩｐマネジメント株式会社 半導体集積回路
US8791743B1 (en) * 2013-02-18 2014-07-29 Apple Inc. Balanced level shifter with wide operation range
US9488996B2 (en) 2014-05-29 2016-11-08 Qualcomm Incorporated Bias techniques and circuit arrangements to reduce leakage current in a circuit
JP2016116220A (ja) * 2014-12-16 2016-06-23 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US20200313000A1 (en) * 2017-11-14 2020-10-01 Renesas Electronics Corporation Semiconductor device
US10418356B2 (en) * 2017-12-21 2019-09-17 Nanya Technology Corporation Diode structure and electrostatic discharge protection device including the same
WO2020119817A1 (en) * 2018-12-14 2020-06-18 Huawei Technologies Co., Ltd. Shared bootstrap capacitor system and method
US20200194459A1 (en) * 2018-12-18 2020-06-18 Vanguard International Semiconductor Corporation Semiconductor devices and methods for fabricating the same
DE102020112203B4 (de) 2020-03-13 2024-08-08 Taiwan Semiconductor Manufacturing Co. Ltd. Integrierte schaltung und verfahren zum einbetten planarer fets mit finfets
US11355493B2 (en) 2020-03-13 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method to embed planar FETs with finFETs
JP7626368B2 (ja) 2020-12-23 2025-02-07 株式会社デンソー 半導体集積回路
CN113467565B (zh) * 2021-07-08 2025-05-30 海宁奕斯伟计算技术有限公司 驱动系统、驱动方法、计算机系统和可读介质
CN117318697B (zh) * 2023-09-15 2024-06-14 辰芯半导体（深圳）有限公司 电平移位电路和电源设备

Citations (5)

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Publication number Priority date Publication date Assignee Title
US5652730A (en) * 1995-07-24 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having hierarchical boosted power-line scheme
US5969542A (en) * 1997-05-21 1999-10-19 Advanced Micro Devices, Inc. High speed gate oxide protected level shifter
CN1409895A (zh) * 2000-01-27 2003-04-09 株式会社日立制作所 半导体器件
US6556061B1 (en) * 2001-02-20 2003-04-29 Taiwan Semiconductor Manufacturing Company Level shifter with zero threshold device for ultra-deep submicron CMOS designs
CN1440124A (zh) * 2002-02-20 2003-09-03 松下电器产业株式会社 驱动电路

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JP3534396B2 (ja) * 1990-03-28 2004-06-07 株式会社ルネサステクノロジ 半導体装置
US6147540A (en) * 1998-08-31 2000-11-14 Motorola Inc. High voltage input buffer made by a low voltage process and having a self-adjusting trigger point
JP3579633B2 (ja) * 2000-05-19 2004-10-20 株式会社ルネサステクノロジ 半導体集積回路
JP2002094364A (ja) * 2000-09-19 2002-03-29 Toshiba Tec Corp 容量性素子の駆動方法及び駆動装置
JP3717781B2 (ja) * 2000-10-30 2005-11-16 株式会社ルネサステクノロジ レベル変換回路および半導体集積回路
US6512407B2 (en) * 2001-04-05 2003-01-28 Parthus Ireland Limited Method and apparatus for level shifting approach with symmetrical resulting waveform
JP3717109B2 (ja) * 2001-05-16 2005-11-16 日本電信電話株式会社 半導体出力回路
JP4327411B2 (ja) * 2001-08-31 2009-09-09 株式会社ルネサステクノロジ 半導体装置
JP3866111B2 (ja) * 2002-01-18 2007-01-10 株式会社ルネサステクノロジ 半導体集積回路及びバーンイン方法
US6882224B1 (en) * 2003-04-03 2005-04-19 Xilinx, Inc. Self-biasing for common gate amplifier
JP4231352B2 (ja) * 2003-07-04 2009-02-25 東芝テック株式会社 インクジェットヘッド駆動装置の電圧供給装置
US20050134355A1 (en) * 2003-12-18 2005-06-23 Masato Maede Level shift circuit
US7205820B1 (en) * 2004-07-08 2007-04-17 Pmc-Sierra, Inc. Systems and methods for translation of signal levels across voltage domains
US7151400B2 (en) * 2004-07-13 2006-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Boost-biased level shifter
JP2006303753A (ja) * 2005-04-19 2006-11-02 Renesas Technology Corp 半導体集積回路装置

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
US5652730A (en) * 1995-07-24 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having hierarchical boosted power-line scheme
US5969542A (en) * 1997-05-21 1999-10-19 Advanced Micro Devices, Inc. High speed gate oxide protected level shifter
CN1409895A (zh) * 2000-01-27 2003-04-09 株式会社日立制作所 半导体器件
US6556061B1 (en) * 2001-02-20 2003-04-29 Taiwan Semiconductor Manufacturing Company Level shifter with zero threshold device for ultra-deep submicron CMOS designs
CN1440124A (zh) * 2002-02-20 2003-09-03 松下电器产业株式会社 驱动电路

Also Published As

Publication number Publication date
CN1855725A (zh) 2006-11-01
CN105577145A (zh) 2016-05-11
JP2006303753A (ja) 2006-11-02
US20090195292A1 (en) 2009-08-06
US20110057708A1 (en) 2011-03-10
US20060232307A1 (en) 2006-10-19
CN1855725B (zh) 2016-01-13
US8013656B2 (en) 2011-09-06
KR20060110220A (ko) 2006-10-24
TWI423395B (zh) 2014-01-11
US7855590B2 (en) 2010-12-21
TW200707648A (en) 2007-02-16
US7532054B2 (en) 2009-05-12

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Granted publication date: 20181002