CN105525270A - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
CN105525270A
CN105525270A CN201410511291.0A CN201410511291A CN105525270A CN 105525270 A CN105525270 A CN 105525270A CN 201410511291 A CN201410511291 A CN 201410511291A CN 105525270 A CN105525270 A CN 105525270A
Authority
CN
China
Prior art keywords
rotation
fixture
revolution
revolution fixture
film deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410511291.0A
Other languages
English (en)
Chinese (zh)
Inventor
永谷浩治
本田优治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to CN201410511291.0A priority Critical patent/CN105525270A/zh
Priority to PCT/JP2015/076557 priority patent/WO2016052239A1/fr
Priority to TW104131820A priority patent/TW201623665A/zh
Publication of CN105525270A publication Critical patent/CN105525270A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN201410511291.0A 2014-09-29 2014-09-29 成膜装置 Pending CN105525270A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201410511291.0A CN105525270A (zh) 2014-09-29 2014-09-29 成膜装置
PCT/JP2015/076557 WO2016052239A1 (fr) 2014-09-29 2015-09-17 Système de dépôt de film
TW104131820A TW201623665A (zh) 2014-09-29 2015-09-25 成膜裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410511291.0A CN105525270A (zh) 2014-09-29 2014-09-29 成膜装置

Publications (1)

Publication Number Publication Date
CN105525270A true CN105525270A (zh) 2016-04-27

Family

ID=55630279

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410511291.0A Pending CN105525270A (zh) 2014-09-29 2014-09-29 成膜装置

Country Status (3)

Country Link
CN (1) CN105525270A (fr)
TW (1) TW201623665A (fr)
WO (1) WO2016052239A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110387530A (zh) * 2019-08-14 2019-10-29 南开大学 一种圆锅夹具与一种镀膜装置
CN110629169A (zh) * 2019-10-29 2019-12-31 苏州华楷微电子有限公司 一种公转式半导体蒸发台
CN110643949A (zh) * 2019-10-29 2020-01-03 苏州华楷微电子有限公司 一种公转式半导体蒸发台的蒸发方法
CN113316661A (zh) * 2019-02-14 2021-08-27 东和株式会社 工件保持部旋转单元及真空处理装置
CN114990493A (zh) * 2022-06-23 2022-09-02 北海惠科半导体科技有限公司 蒸发镀膜装置及其镀膜方法
CN115110038A (zh) * 2022-06-29 2022-09-27 北海惠科半导体科技有限公司 蒸发镀膜装置和镀膜方法
CN117758221A (zh) * 2023-12-26 2024-03-26 皓晶控股集团股份有限公司 一种真空玻璃镀膜设备及工艺

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09228043A (ja) * 1996-02-21 1997-09-02 Sony Corp スパッタリング装置およびスパッタリング方法
JP2008308714A (ja) * 2007-06-13 2008-12-25 Shin Meiwa Ind Co Ltd 連続式成膜装置
JP2009084638A (ja) * 2007-09-28 2009-04-23 Nikon Corp 成膜装置および成膜方法
JP2013093529A (ja) * 2011-10-27 2013-05-16 Disco Abrasive Syst Ltd ユニット搬出入装置
CN203498464U (zh) * 2013-10-21 2014-03-26 株式会社新柯隆 薄膜形成装置
CN103890909A (zh) * 2011-10-12 2014-06-25 磁性流体技术（美国）公司 具有机械停止件的非接触磁驱动组件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09228043A (ja) * 1996-02-21 1997-09-02 Sony Corp スパッタリング装置およびスパッタリング方法
JP2008308714A (ja) * 2007-06-13 2008-12-25 Shin Meiwa Ind Co Ltd 連続式成膜装置
JP2009084638A (ja) * 2007-09-28 2009-04-23 Nikon Corp 成膜装置および成膜方法
CN103890909A (zh) * 2011-10-12 2014-06-25 磁性流体技术（美国）公司 具有机械停止件的非接触磁驱动组件
JP2013093529A (ja) * 2011-10-27 2013-05-16 Disco Abrasive Syst Ltd ユニット搬出入装置
CN203498464U (zh) * 2013-10-21 2014-03-26 株式会社新柯隆 薄膜形成装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113316661A (zh) * 2019-02-14 2021-08-27 东和株式会社 工件保持部旋转单元及真空处理装置
CN110387530A (zh) * 2019-08-14 2019-10-29 南开大学 一种圆锅夹具与一种镀膜装置
CN110629169A (zh) * 2019-10-29 2019-12-31 苏州华楷微电子有限公司 一种公转式半导体蒸发台
CN110643949A (zh) * 2019-10-29 2020-01-03 苏州华楷微电子有限公司 一种公转式半导体蒸发台的蒸发方法
CN110643949B (zh) * 2019-10-29 2022-08-05 苏州华楷微电子有限公司 一种公转式半导体蒸发台的蒸发方法
CN110629169B (zh) * 2019-10-29 2024-02-27 苏州华楷微电子有限公司 一种公转式半导体蒸发台
CN114990493A (zh) * 2022-06-23 2022-09-02 北海惠科半导体科技有限公司 蒸发镀膜装置及其镀膜方法
CN114990493B (zh) * 2022-06-23 2024-01-12 北海惠科半导体科技有限公司 蒸发镀膜装置及其镀膜方法
CN115110038A (zh) * 2022-06-29 2022-09-27 北海惠科半导体科技有限公司 蒸发镀膜装置和镀膜方法
CN115110038B (zh) * 2022-06-29 2024-01-12 北海惠科半导体科技有限公司 蒸发镀膜装置和镀膜方法
CN117758221A (zh) * 2023-12-26 2024-03-26 皓晶控股集团股份有限公司 一种真空玻璃镀膜设备及工艺

Also Published As

Publication number Publication date
TW201623665A (zh) 2016-07-01
WO2016052239A1 (fr) 2016-04-07

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WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20160427

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