CN105525270A - Film forming device - Google Patents

Film forming device Download PDF

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Publication number
CN105525270A
CN105525270A CN201410511291.0A CN201410511291A CN105525270A CN 105525270 A CN105525270 A CN 105525270A CN 201410511291 A CN201410511291 A CN 201410511291A CN 105525270 A CN105525270 A CN 105525270A
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CN
China
Prior art keywords
rotation
fixture
revolution
revolution fixture
film deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410511291.0A
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Chinese (zh)
Inventor
永谷浩治
本田优治
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Ulvac Inc
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Ulvac Inc
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Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to CN201410511291.0A priority Critical patent/CN105525270A/en
Publication of CN105525270A publication Critical patent/CN105525270A/en
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Abstract

The invention relates to film forming devices and provides a film forming device which is high in productivity. The inclinations of multiple rotary and revolutionary jigs (211 to 215) are increased, so that the front head side and the rear tail side of each two adjoining jigs among the jigs (211 to 215) are made to coincide. When the rotary and revolutionary jigs (211 to 215) are made to rotate with the jig rotation axes (29) as the centers and convolute and move with the main rotation axis (12) as the center at the same time, film forming material particles discharged from a film forming source (15) reach base plates (26) maintained through the corresponding rotary and revolutionary jigs (211 to 215), and a thin film is formed. As the gaps among the rotary and revolutionary jigs (211 to 215) are small, the using efficiency of a film forming material (15b) is improved.

Description

Film deposition system
Technical field
The present invention relates to the technical field of film forming film deposition system in vacuum atmosphere, particularly relate to the technical field of the film deposition system using rotation-revolution fixture.
Background technology
In vacuum atmosphere in film forming situation, there is film forming one by one in the film deposition system of the block-by-block formula of substrate and one-pass film-forming in the batch-wise film deposition system of the substrate of multiple pieces of numbers, as batch-wise film deposition system, known polylith substrate is assemblied in rotation-revolution fixture and make rotation-revolution fixture rotate film forming film deposition system.
The symbol 102 of Figure 10 is the vacuum film formation apparatus of the prior art, in the inside of vacuum tank 111, is configured with the circuit orbit 116 being fixed on vacuum tank 111, multiple (in this case 3) rotation-revolution fixture 121 1~ 121 3and film deposition source 115.
Rotation-revolution fixture 121 1~ 121 3be the smooth discoid or domed shape that bends as a part for spheroid, as shown in figure 11, when one side (being concave surface bending), the substrate 126 of polylith as film forming object be installed.
At each rotation-revolution fixture 121 1~ 121 3face (being convex surface when the bending) side of opposition side, be configured with turning axle, in this face, be fixed with one end of turning axle 127 in central position, at the other end, be provided with running vehicle wheel 122.
Running vehicle wheel 122 is configured on circuit orbit 116, if the power in the bending direction along circuit orbit 116 is applied to turning axle 127 by not shown running gear centered by the central point of circuit orbit 116, then running vehicle wheel 122 rolls on circuit orbit 116, rotates and travels.
If running vehicle wheel 122 rotates, then turning axle 127 and rotation-revolution fixture 121 1~ 121 3rotate centered by its central axis.
When running vehicle wheel 122 travels, rotation-revolution fixture 121 1~ 121 3circle round centered by the central point of the traveling of running vehicle wheel 122.
If this convolution is called revolution, by rotation-revolution fixture 121 1~ 121 3rotation be called rotation, then each rotation-revolution fixture 121 1~ 121 3rotation is on one side while revolution.
Film deposition source 115 is configured at rotation-revolution fixture 121 1~ 121 3below, there is container 115a and be configured at the film forming material 115b of inside of container 115a.
At vacuum tank 111, be connected with vacuum pumping hardware 117, if after becoming vacuum atmosphere making the inside of vacuum tank 111 carry out vacuum exhaust by vacuum pumping hardware 117, by not shown heating unit, film forming material 115b is heated, produce the steam of film forming material 115b, then this steam is discarded to the inside of vacuum tank 111 from film deposition source 115.
At each rotation-revolution fixture 121 1~ 121 3, multiple substrate 126 configures towards film deposition source 115 respectively.
Rotation-revolution fixture 121 1~ 121 3leave with both set a distances respectively and configure, substrate 126 and rotation-revolution fixture 121 1~ 121 3carry out together rotating and circling round, meanwhile, from the surface of the steam arrival substrate 126 that film deposition source 115 is released, grow uniform film.
Rotation-revolution fixture 121 1~ 121 3smooth disk or bending disk, even if make the rotation-revolution fixture 121 adjoined as illustrated in fig. 12 1~ 121 3periphery contact with each other, also at rotation-revolution fixture 121 1~ 121 3periphery and adjacent rotation-revolution fixture 121 1~ 121 3periphery between form gap.
In this gap, there is multiple rotation-revolution fixture 121 1~ 121 3in by each rotation-revolution fixture 121 1~ 121 3summit near periphery surround and formed gap portion 100a and be formed at two adjacent rotation-revolution fixtures 121 1~ 121 3periphery between gap portion 100b 1~ 100b 3, pass through these gap portions 100a, 100b from a part for the steam of film deposition source 115 releasing 1~ 100b 3, be helpless to film forming and consume.
In addition, about the film deposition system using rotation-revolution fixture, be recorded in such as Japanese Laid-Open Patent Publication 57-70274 publication, Japanese Unexamined Patent Publication 2002-164303 publication, such as Japanese Unexamined Patent Publication 2012-224878 publication is recorded in the technology of the mode film forming not forming gap, such as Japanese Patent No. 2762948 publication is recorded in the technology using the device of rotation-revolution fixture to improve, but does not find the film deposition system with the rotation-revolution fixture making gap portion reduce.
Patent documentation
Patent documentation 1: Japanese Laid-Open Patent Publication 57-70274 publication;
Patent documentation 2: Japanese Unexamined Patent Publication 2002-164303 publication;
Patent documentation 3: Japanese Unexamined Patent Publication 2012-224878 publication;
Patent documentation 4: Japanese Patent No. 2762948 publication.
Summary of the invention
The problem that invention will solve
The present invention creates to solve the bad of above-mentioned prior art, its object is to, provides and gap portion can be made to reduce and effectively apply flexibly the film deposition system of film forming material.
For solving the scheme of problem
(owing to copying word by word claim, thus omit.)
The effect of invention
The service efficiency of film forming material improves.
Even if do not make larger-scale unit, also can allow to by one-pass film-forming treatment process and the block number of film forming substrate increases.
Even if do not increase the diameter of circuit orbit, also can increase the obliquity of rotation-revolution fixture and be reduced to the incident angle of mould material particle.
Because incident angle is little, film forming material particle thus can be made to arrive and to be formed at the deep hole of substrate surface or the bottom surface of groove.
Accompanying drawing explanation
Fig. 1 is the film deposition system of an example of the present invention.
Fig. 2 is the stereographic map of jig installing apparatus.
Fig. 3 (a), (b) are the figure of the inside for illustration of framework, and (a) is the situation of the rotation-revolution fixture of disk, and (b) is the situation of the rotation-revolution fixture of dome type.
Fig. 4 is the figure of the position for illustration of the substrate being configured at rotation-revolution fixture.
Fig. 5 is the figure of the configuration for illustration of 6 pieces of rotation-revolution fixtures.
Fig. 6 (a), (b) are the figure for illustration of 4 inches of substrates being configured at the state of rotation-revolution fixture, and (a) is orthographic plan, and (b) is stereographic map.
Fig. 7 (a), (b) are the figure for illustration of 5 inches of substrates being configured at the state of rotation-revolution fixture, and (a) is orthographic plan, and (b) is stereographic map.
Fig. 8 (a), (b) are the figure for illustration of 6 inches of substrates being configured at the state of rotation-revolution fixture, and (a) is orthographic plan, and (b) is stereographic map.
Fig. 9 (a), (b) are the figure for illustration of 8 inches of substrates being configured at the state of rotation-revolution fixture, and (a) is orthographic plan, and (b) is stereographic map.
Figure 10 is the film deposition system of prior art.
Figure 11 is the figure for illustration of state substrate being configured at rotation-revolution fixture.
Figure 12 is the figure of the state illustrated when making rotation-revolution fixture closely sealed.
Embodiment
< embodiment >
Fig. 1 illustrates film deposition system 2 of the present invention.
This film deposition system 2 has vacuum tank 11, in the inside of vacuum tank 11, is configured with circuit orbit 16, is fixed on vacuum tank 11.
In the inside of vacuum tank 11, be configured with multiple (being 5 in FIG) rotation-revolution fixture 21 of more than 5 1~ 21 5with each rotation-revolution fixture 21 of maintenance 1~ 21 5jig installing apparatus 20.
Jig installing apparatus 20 shown in Figure 2.Jig installing apparatus 20 has: main rotating shaft 34, inserts the ceiling running through vacuum tank 11 airtightly; Top board 30, is configured at the inside of vacuum tank 11, is installed on the lower end of main rotating shaft 34; Arm 31, top board 30 is located on top; And framework 32, be located at the bottom of arm 31.
In this example, arm 31, with rotation-revolution fixture 21 1~ 21 5the number of equal amts is fixed on top board 30.
Top board 30 has the bridge plate 33 extending to the center of disk from discoid part, and at the center position of disk, bridge plate 33 is fixed in the lower end of main rotating shaft 34.
Jig installing apparatus 20 is suspended to the inside of vacuum tank 11 by main rotating shaft 34.
Rotation-revolution fixture 21 1~ 21 5being positioned at the below of top board 30, as shown in the sectional view of Fig. 3 (a), is discoid shape, or, as shown in the sectional view of Fig. 3 (b), be a part for spheroid, become the shape of the dome type that central part bends.
At each rotation-revolution fixture 21 1~ 21 5, at rotation-revolution fixture 21 1~ 21 5central position, be provided with one end of bar-shaped clamp shaft 38.
As the fixture rotation 29 of the central axis of clamp shaft 38 respectively by rotation-revolution fixture 21 1~ 21 5central position, if clamp shaft 38 rotates, then rotation-revolution fixture 21 centered by fixture rotation 29 1~ 21 5also rotate centered by fixture rotation 29.
In this example, about clamp shaft 38, fixture rotation 29 is relative to rotation-revolution fixture 21 1~ 21 5the part being provided with clamp shaft 38 and vertical, no matter at each rotation-revolution fixture 21 1~ 21 5on which position, all turn at the plane internal rotation vertical with fixture rotation 29.
The other end of clamp shaft 38 inserts the inside running through framework 32, each rotation-revolution fixture 21 1~ 21 5weight supported by jig installing apparatus 20 via clamp shaft 38 and framework 32.
On circuit orbit 16, be configured with the running vehicle wheel 22 that one end is installed on axletree 27.
The other end of axletree 27 inserts framework 32, and running vehicle wheel 22 is pressed on circuit orbit 16 by jig installing apparatus 20 via axletree 27 and framework 32.
Clamp shaft 38 and axletree 27 can rotate relative to framework 32, if running vehicle wheel 22 rolls and travels on circuit orbit 16, then axletree 27 can rotate.
In the outside of vacuum tank 11, be configured with electric motor 13.
Electric motor 13 is installed on the top of main rotating shaft 34, and main rotating shaft 34 is rotated centered by the main rotating shaft line 12 of the central axis as main rotating shaft 34.
Circuit orbit 16 is laid with round shape, the plane that main rotating shaft line 12 is positioned at relative to circuit orbit 16 and vertically through the central point of circuit orbit 16.
Axletree 27 and running vehicle wheel 22 to rotate centered by the wheel axis of rotation 28 of identical and common central axis, and wheel axis of rotation 28 intersects with main rotating shaft line 12.
Therefore, if make electric motor 13 carry out action, main rotating shaft 34 is rotated, then each rotation-revolution fixture 21 centered by main rotating shaft line 12 1~ 21 5centered by main rotating shaft line 12, convolution is mobile.
Now, running vehicle wheel 22 contacts with circuit orbit 16, presses on circuit orbit 16, by each rotation-revolution fixture 21 1~ 21 5convolution move, running vehicle wheel 22 is not rolled slidably on circuit orbit 16.That is, each running vehicle wheel 22 rotates centered by wheel axis of rotation 28, circles round mobile along circuit orbit 16 centered by main rotating shaft line 12 meanwhile.
In addition, as long as running vehicle wheel 22 can move and rotation centered by the wheel axis of rotation 28 of axletree 27 in the convolution carried out centered by main rotating shaft line 12, also just vertically can configure relative to circuit orbit 16, also can tilt and configure.
In the part being positioned at the inside of framework 32 of axletree 27, be provided with driving toothed gear 36, in the part being positioned at the inside of framework 32 of clamp shaft 38, be provided with passive gear 37.
Driving toothed gear 36 is centered by the wheel axis of rotation 28 of running vehicle wheel 22 and axletree 27 and rotate, and passive gear 37 rotates centered by the fixture rotation 29 of clamp shaft 38.
Driving toothed gear 36 and passive gear 37 engage, if a side rotates, then its revolving force is passed to the opposing party, and the opposing party rotates.
Therefore, jig installing apparatus 20 makes multiple rotation-revolution fixture 21 1~ 21 5turn right (turning clockwise) or arbitrary identical direction movement of circling round together centered by main rotating shaft line 12 of turn left (turning counterclockwise), if running vehicle wheel 22 and rotation-revolution fixture 21 1~ 21 5centered by main rotating shaft line 12, convolution is mobile together, then running vehicle wheel 22 rotates centered by wheel axis of rotation 28, by its revolving force, axletree 27 and driving toothed gear 36 are rotated, make passive gear 37, clamp shaft 38 and rotation-revolution fixture 21 by the rotation of driving toothed gear 36 1~ 21 5rotate centered by fixture rotation 29.
In vacuum tank 11 inside than rotation-revolution fixture 21 1~ 21 5closer to the position of below, be configured with film deposition source 15.
Each rotation-revolution fixture 21 1~ 21 5, obliquely downward, face-to-face with film deposition source 15, opposition side is towards oblique upper for one side.
Clamp shaft 38 is installed on the face towards oblique upper, in face obliquely downward, as shown in Figure 4, is provided with multiple board holder 25.
When domed shape, as shown in Fig. 3 (b), becoming a side of concave surface bending, being provided with board holder 25, to tilt with the aspectant mode of film deposition source 15.
Fig. 4 represents rotation-revolution fixture 21 1~ 21 5the face towards film deposition source 15, symbol 25 keeps the board holder of substrate 26.
The substrate 26 kept by board holder 25 is not from rotation-revolution fixture 21 1~ 21 5come off, with rotation-revolution fixture 21 1~ 21 5carry out together rotating and circling round.
As described later, if arrive the surface of substrate 26 from the film forming material particle of film deposition source 15 releasing, then at this substrate surface, film is grown.
Each rotation-revolution fixture 21 1~ 21 5the central position being provided with clamp shaft 38 be positioned at circumferentially same, about rotation-revolution fixture 21 1~ 21 5with clamp shaft 38, fixture rotation 29 towards the direction do not intersected with main rotating shaft line 12, result, each rotation-revolution fixture 21 1~ 21 5, each rotation-revolution fixture 21 carried out together when circling round mobile centered by main rotating shaft line 12 1~ 21 5side, front different from the distance after the Distance geometry between main rotating shaft line 12 between tail side and main rotating shaft line 12.
Therefore, in the present invention, by each rotation-revolution fixture 21 1~ 21 5when configuring abreast with circle, can by each rotation-revolution fixture 21 1~ 21 5the part of side, front and being partially configured to and other adjacent rotation-revolution fixtures 21 of rear tail side 1~ 21 5the part of rear tail side and partially overlapping of side, front, according to this configuration, each rotation-revolution fixture 21 1~ 21 5mutually do not collide, adjacent rotation-revolution fixture 21 1~ 21 5central position between distance than rotation-revolution fixture 21 1~ 21 5diameter shorter and close.
About coincidence, each rotation-revolution fixture 21 1~ 21 5be configured to side in side, front and rear tail side than opposite side closer to main rotating shaft line 12.
Along whole rotation-revolution fixture 21 that circuit orbit 16 configures 1~ 21 5, the same side in side, front and rear tail side is close to main rotating shaft line 12.
Such as, in the film deposition system of Fig. 1, watch each rotation-revolution fixture 21 from the ceiling side of vacuum tank 11 1~ 21 5, when rotatably rotating clockwise, each rotation-revolution fixture 21 1~ 21 5side, front more farther from main rotating shaft line 12 than rear tail side, when rotatably rotating counterclockwise, side, front than rear tail side from main rotating shaft line 12 more close to.
Film deposition source 15 is configured in the position intersected with main rotating shaft line 12, therefore, at each rotation-revolution fixture 21 1~ 21 5the part of coincidence, the rotation-revolution fixture 21 connect near the either side in side, front and rear tail side 1~ 21 5closer to film deposition source 15, the rotation-revolution fixture 21 connect near opposite side 1~ 21 5further from the configuration of film deposition source 15 ground, in the part that this far configures, relative to film deposition source 15, become adjacent rotation-revolution fixture 21 1~ 21 5the behind of part of overlap.From the part of film forming material particle arrival except becoming part behind that film deposition source 15 is released, less than reaching for part behind.
When the coincidence of the film deposition system 2 of Fig. 1, when watching from top, the side, front turned clockwise is from the side away from main rotating shaft line 12, and thus side, front is watched from film deposition source 15 and becomes behind, and rear tail side does not become behind.
In the present invention, one piece of rotation-revolution fixture 21 1~ 21 5, the part of the side in the part of side, front and rear tail side part becomes behind, and the part of the opposing party does not become behind.
In this embodiment, each rotation-revolution fixture 21 1~ 21 5, the central position being configured with the face of substrate 26 is overlapping not become mode behind, therefore, at rotation-revolution fixture 21 1~ 21 5the face being configured with substrate 26, no matter in which position, at rotation-revolution fixture 21 1~ 21 5during rotating once centered by fixture rotation 29, no matter all pass through not become part behind, be thus be configured at rotation-revolution fixture 21 1~ 21 5which position on surface of substrate 26, the film forming material particle of releasing from film deposition source 5 can both arrive.
In addition, vehicle rotation 28 intersects with main rotating shaft line 12, and fixture rotation 29 does not intersect with main rotating shaft line 12, thus wheel axis of rotation 28 not parallel with fixture rotation 29 (also comprising consistent).
< film >
Then, the film using this film deposition system 2 is described.
In this film deposition system 2, rotation-revolution fixture 21 1~ 21 5load and unload from clamp shaft 38 and freely form, by the film forming situation of this film deposition system 2, first, open the door of vacuum tank 11, by each rotation-revolution fixture 21 1~ 21 5dismantle from jig installing apparatus 20, be taken out to the outside of vacuum tank 11, after substrate 26 is installed on board holder 25, be assemblied in jig installing apparatus 20, door is closed.
At vacuum tank 11, be connected with vacuum pumping hardware 17, make vacuum pumping hardware 17 carry out action, make the inside of vacuum tank 11 carry out vacuum exhaust and become vacuum atmosphere, make electric motor 13 carry out action, make each rotation-revolution fixture 21 1~ 21 5rotate (this is called revolution) around main rotating shaft line 12, in addition, rotate (this is called rotation) around fixture rotation 29.
Film deposition source 15 has container 15a and is configured at the film forming material 15b of container 15a, if heated container 15a and film forming material 15b by heating unit (not shown), film forming material 15b is heated up, then start the evaporation of film forming material 15b, be discarded to the inside of vacuum tank 11 as the film forming material particle of the steam of film forming material 15b from film deposition source 15.In addition, also can not heat heating container 15a, but direct heating is carried out to film forming material 15b.
If the film forming material particle being discarded to the inside of vacuum tank 11 is advanced in the inside of vacuum tank 11, arrive the surface of substrate 26, then in the part that the film forming material particle of substrate 26 arrives, grow film.
As mentioned above, film deposition system 2 of the present invention, each rotation-revolution fixture 21 1~ 21 5be configured to, in the inside of vacuum tank 11, side, front and rear tail side superimposed, be formed at two adjacent rotation-revolution fixtures 21 1~ 21 5periphery between the rotation-revolution fixture of film deposition system that configures than making not leave with not overlapping between the periphery of each rotation-revolution fixture of gap between gap less.
In addition, owing to making side, front and rear tail side superimposed, even if thus do not increase the diameter of circuit orbit 16, each rotation-revolution fixture 21 1~ 21 5obliquity downward also larger than the situation of the film deposition system do not overlapped, in this case, by each rotation-revolution fixture 21 1~ 21 5periphery vertex position neighbouring encirclement and the gap formed is also less than the film deposition system do not overlapped.
Compared with the situation that gap is large, the situation that gap is little, less by the amount of the film forming material particle in gap, the service efficiency being thus configured at the film forming material 15b of container 15a improves.
After film is formed at the surface of substrate 26 with set thickness, the inside of vacuum tank 11 becomes normal atmosphere, is opened by door, rotation-revolution fixture 21 1~ 21 5take out from the inside of vacuum tank 11, the substrate 26 of film forming is replaced by the substrate 26 of non-film forming, is assemblied in the inside of vacuum tank 11, carries out film forming process.
Other film deposition systems of < >
Fig. 5 illustrates 6 pieces of rotation-revolution fixtures 21 1~ 21 6side, front and rear tail side superimposed and rotation-revolution fixture 21 when being configured at the vacuum tank of film deposition system 1~ 21 6coincidence, if rotation-revolution fixture 21 1~ 21 6block number increase, then each rotation-revolution fixture 21 1~ 21 6periphery in by near summit part surround gap smaller.
The diameter of < substrate and the relation > of rotation-revolution fixture
Following table 1,2 is numerical value when the discoid substrate of 4,5,6,8 inches being assemblied in the rotation-revolution fixture that is located at film deposition system and forming film, and obtaining every 1 hour can the substrate block number (treating piece number/time) of film forming.
[table 1]
table 1 rotation-revolution fixture is 3 pieces and there is not the film deposition system of overlapping prior art
4”5”6”8”
substrate sum 54362112
evacuation time (comprising heating) 60606060
film formation time 20202020
pressure rising time (comprising cooling) 10101010
total ascent time 90909090
treating piece number/time 36.024.014.08.0
[table 2]
table 2 rotation-revolution fixture is 5 pieces and there is not overlapping film deposition system of the present invention
4”5”6”8”
substrate sum 60402515
duplication loss (%) 16.712.520.016.7
evacuation time (comprising heating) 60606060
film formation time 23.322.524.023.3
pressure rising time (comprising cooling) 10101010
total ascent time 93.392.594.093.3
treating piece number/time 38.625.916.09.6
the total percentage 1.111.111.191.25 of substrate
productivity ratio 1.071.081.141.21
The diameter of rotation-revolution fixture 420 inches, bending dome type.
Table 1 is the numerical value 3 pieces of rotation-revolution fixtures being configured to the film deposition system of the prior art do not overlapped.
Table 2 is overlapped by 5 pieces of rotation-revolution fixtures and the numerical value of the film deposition system of the present invention of configuration, and the size of the vacuum tank of this device is the size identical with the vacuum tank of the film deposition system of table 1.
In table 1,2, the block number of the every substrate that can process for 1 hour of numeric representation film deposition system of the project of " treating piece number/time ".
The project of " evacuation time ", " film formation time ", " pressure rising time ", " total ascent time " is the numerical value for obtaining " treating piece number/time ", and unit is " minute ".
The project of " substrate sum " is total block number when making the whole rotation-revolution fixture be configured in vacuum tank be fully loaded with substrate, and the project of " total ascent time " is the time required for process of the substrate of the block number described in project of " substrate sum ".
The project of " the total percentage of substrate " in table 2 be about formed objects substrate, numerical value described in " the substrate sum " of the film deposition system of table 2 is to the value of the numerical value of " the substrate sum " of the film deposition system of, table 1, learn, the film deposition system of table 2, compared with the film deposition system of table 1, increase by the block number of more than 11%.
The project of " duplication loss " in table 2 is relative to the ratio becoming the area of the entirety of part behind in the area of rotation-revolution fixture, be associated with the numerical value of the project of " film formation time ", about the substrate of formed objects, the numerical value of the project at " duplication loss " is added " 1 " and the numerical value obtained is multiplied by " film formation time " of table 1 and the value obtained is recorded in the project of " film formation time " of table 2.
" the productivity ratio " of table 2 is ratios of the block number of the substrate that the block number of the substrate that the film deposition system of table 2 can process for 1 hour can process relative to the film deposition system of table 1 for 1 hour, and this numerical value is that the numerical value of the project of table 1 " treating piece number/time " is to the value of the numerical value of " the treating piece number/time " of the substrate of the formed objects of, table 2.
The value deducting " 1 " and obtain from " the total percentage of substrate " and " productivity ratio " is the ratio of the assembling substrate that the film deposition system of the present invention of table 2 increases than the film deposition system of table 1 and the ratio of substrate that can process, learn from table 2, the diameter of substrate is larger, and productivity ratio increases.
Following table 3 is 3 pieces relative to rotation-revolution fixture number and every 1 packaged film deposition system being furnished with the prior art of 10 pieces of substrates, with in the vacuum tank of formed objects, rotation-revolution fixture number is 6 pieces and every 1 packaged comparison of being furnished with the film deposition system of the present invention of 8 pieces of substrates, and productivity is increased to 1.5 times.
[table 3]
Table 3 rotation-revolution fixture number 6 pieces and there is overlapping film deposition system of the present invention and rotation-revolution fixture number 3 and there is not the comparison of the film deposition system of overlapping prior art
prior art
substrate sum 3048
duplication loss (%) 030
evacuation time (comprising heating) 6060
film formation time 2026
air discharges (comprising cooling) 1010
treatment time adds up to 9096
treating piece number/time 2030
the total percentage 1.01.6 of substrate
productivity ratio 1.01.5.
In addition, Fig. 6 (a), (b) ~ Fig. 9 (a), (b) are the figure that when substrate 26 of 4,5,6,8 described in table 2 inch being configured at rotation-revolution fixture 21, substrate 26 and the relation of rotation-revolution fixture 21 are shown, Fig. 6 (a) ~ Fig. 9 (a) is the orthographic plan in the face of the side contrary with the face towards film deposition source 15, and Fig. 6 (b) ~ Fig. 9 (b) is stereographic map.
At this, use bending rotation-revolution fixture 21.
Other > of <
Above, to rotation-revolution fixture 21 1~ 21 5be that the situation of 5 pieces is illustrated, but be not limited to 5 pieces, comprise in the present invention and make a part for side, front and rear tail side overlap and the film deposition system of more than 4 pieces rotation-revolution fixtures is set.But, in order to improve the service efficiency of film forming material 15b, expect more than 5 pieces.
In addition, in the examples described above, film deposition source 15 is the film deposition sources causing the vacuum deposition apparatus producing the film forming material particle be made up of the steam of film forming material 15b, but the present invention also can using sputtering source as film deposition source, be used as film forming material and be configured at the sputtering target on electrode, voltage is applied to electrode, in vacuum atmosphere, sputtering target is sputtered, the sputtering particle of releasing from sputtering target is used as film forming material particle.
In the examples described above, use driving toothed gear and passive gear, if but used the device or other devices that driving toothed gear and passive gear are linked by band, would be made by the rotation of running vehicle wheel the rotation-revolution fixture of coincidence rotate centered by central shaft, be then included in the present invention.
Nomenclature
11 ... vacuum tank
12 ... main rotating shaft line
13 ... electric motor
15 ... film deposition source
16 ... circuit orbit
20 ... jig installing apparatus
21,21 1~ 21 5rotation-revolution fixture
22 ... running vehicle wheel
27 ... axletree
28 ... wheel axis of rotation
29 ... fixture rotation
34 ... main rotating shaft
36 ... driving toothed gear
37 ... passive gear
38 ... clamp shaft

Claims (4)

1. a film deposition system, has:
Vacuum tank;
Circuit orbit, is configured in described vacuum tank;
Film deposition source, is discarded to the inside of described vacuum tank by film forming material particle;
Multiple rotation-revolution fixture, is configured with multiple substrate;
Multiple running vehicle wheel, is configured on described circuit orbit;
Jig installing apparatus, keeps multiple described rotation-revolution fixture; And
Electric motor, makes described jig installing apparatus rotate around main rotating shaft line,
Multiple described rotation-revolution fixture, in the inner side of described circuit orbit, configures with circle one by one abreast along described circuit orbit,
Each described rotation-revolution fixture is connected to running vehicle wheel described in other respectively,
If make described jig installing apparatus rotate by described electric motor, then described rotation-revolution fixture is mobile around described main rotating shaft line convolution by the rotation of described jig installing apparatus, and, be connected to the described running vehicle wheel of each described rotation-revolution fixture while rotate centered by wheel axis of rotation, while travel on described circuit orbit
Made described rotation-revolution fixture rotate centered by fixture rotation by the rotation of described running vehicle wheel,
Be configured at the described substrate of described rotation-revolution fixture, carrying out together with described rotation-revolution fixture rotates and circle round moves, and meanwhile, has described film forming material particle, be formed with film in surface attachment,
Each described rotation-revolution fixture, is carrying out the side, front in direction of described convolution movement and rear tail side, with adjoin other described in rotation-revolution fixture overlap and configure,
Each described rotation-revolution fixture respectively, described front side superimposed part and in the rear the part of tail side superimposed either side than overlap other described in rotation-revolution fixture be more positioned near described main rotating shaft line, opposite side than overlap other described in rotation-revolution fixture locate further from described main rotating shaft line.
2. film deposition system according to claim 1, is characterized in that, described wheel axis of rotation and described fixture rotation not parallel.
3. film deposition system according to claim 1, it is characterized in that, at described running vehicle wheel, be fixed with the axletree being carried out rotation centered by described wheel axis of rotation by the rotation of described running vehicle wheel, at described rotation-revolution fixture, be fixed with the clamp shaft rotated centered by described fixture rotation, the driving toothed gear being located at described axletree and the passive gear being located at described clamp shaft engagement, the rotation of described driving toothed gear is passed to described passive gear, is made described clamp shaft and described rotation-revolution fixture rotate by described passive gear.
4. the film deposition system according to any one of claims 1 to 3, is characterized in that, described rotation-revolution fixture arranges more than 5.
CN201410511291.0A 2014-09-29 2014-09-29 Film forming device Pending CN105525270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410511291.0A CN105525270A (en) 2014-09-29 2014-09-29 Film forming device

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Application Number Priority Date Filing Date Title
CN201410511291.0A CN105525270A (en) 2014-09-29 2014-09-29 Film forming device
PCT/JP2015/076557 WO2016052239A1 (en) 2014-09-29 2015-09-17 Film deposition system
TW104131820A TW201623665A (en) 2014-09-29 2015-09-25 Film forming apparatus

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Application publication date: 20160427