CN105517948A - Mems转移方法、制造方法、器件及设备 - Google Patents
Mems转移方法、制造方法、器件及设备 Download PDFInfo
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Abstract
本发明公开了一种MEMS转移方法、制造方法、器件及设备。该用于MEMS转移的方法包括:在激光透明的承载体的第一表面上沉积激光吸收层;在激光吸收层上形成MEMS结构;将MEMS结构附着到接收体上;以及从承载体侧执行激光剥离,以去除承载体。通过本发明,可以通过简单、低成本的方式实现高品质MEMS结构的转移。
Description
技术领域
本发明涉及MEMS(微机电系统)技术领域,更具体地,涉及一种用于MEMS转移的方法、一种用于制造MEMS器件的方法、一种MEMS器件以及一种包含MEMS器件的电子设备。
背景技术
MEMS是目前在工业界引起关注的一项技术。它的应用非常广泛。例如,智能手机中的传感器是MEMS应用的一个例子。
在制造MEMS器件的过程中,通常,首先在承载晶圆(wafer)上形成MEMS结构,然后,将MEMS结构转移到封装衬底上,最后去除承载晶圆。为了能够容易地去除承载晶圆,在现有技术中,采用临时键合的方式在承载晶圆和MEMS结构之间进行接合。
例如,在AlainPhommahaxay、LieveBogaerts等的“ThinMEMSpackagesobtainedbyanovelcollectivecaptransferprocess”,Proc.EurosensorsXXV,September4-7,2011,Athens,Greece中介绍了一种使用热塑胶来转移MEMS结构的方式。该文献在此全部引入作为参考。一般来说,使用热塑胶的转移仅允许低温处理,例如200℃~250℃。
例如,在PCT专利申请公开WO2014/037829A1中公开了一种用于形成电结构的方法。在该专利申请中,在承载晶圆和器件晶圆之间采用临时键合的方式,其中,处理温度例如小于400℃。该专利申请在此全部引入作为参考。
例如,在R.Delmdahl,R.等的“Large-arealaser-lift-offprocessinginmicroelectronics”,PhysicsProcedia41(2013)pp.241-24中介绍了一种通过激光剥离对键合在玻璃承载体上的薄硅晶圆进行处理的方法,其中,处理温度例如小于400℃。该文献在此全部引入作为参考。
在现有技术中,由于采用热塑胶或者临时键合来进行MEMS结构的转移,因此,很难直接对承载体上的MEMS结构执行高温处理。由于诸如压电层的许多MEMS结构需要经过高温处理,例如培烧、退火等,以获得更好的品质,因此,在现有技术中很难高品质且低成本的MEMS结构转移和封装。
发明内容
本发明的一个目的是提供一种用于MEMS转移的新技术方案。
根据本发明的一个实施例,提供了一种用于MEMS转移的方法,包括:在激光透明的承载体的第一表面上沉积激光吸收层;在激光吸收层上形成MEMS结构;将MEMS结构附着到接收体上;以及从承载体侧执行激光剥离,以去除承载体。
优选地,在激光透明的承载体的第一表面上沉积激光吸收层的步骤还包括:通过通过低压化学气相沉积或者常压化学气相沉积来沉积激光吸收层。
优选地,在沉积激光吸收层的过程中采用大于或等于570℃的温度。
优选地,所述激光吸收层的材料包括电介质、金属和/或合金以及聚合物中的至少一种。
优选地,所述激光吸收层的材料包括多晶硅和金属氧化物中的至少一种。
优选地,在激光吸收层上形成MEMS结构的步骤还包括:直接在承载体上对MEMS执行处理。
优选地,所述处理包括培烧处理、退火处理、外延材料沉积中的至少一种。
优选地,所述处理的温度大于或等于420℃的温度。
优选地,所述处理的温度大于或等于600℃。
优选地,所述处理的温度大于或等于700℃。
优选地,所述处理的温度大于或等于1000℃。
优选地,所述接收体是接收晶圆,所述从承载体侧执行激光剥离的步骤是在晶圆级执行的,以及所述方法还包括:在去除承载体之后,在接收晶圆上切割MEMS结构。
优选地,所述接收体是组装衬底,在激光吸收层上形成MEMS结构的步骤还包括分割MEMS结构,以及所述从承载体侧执行激光剥离的步骤是在组装级执行的。
优选地,所述承载体是蓝宝石、SiC、玻璃和石英中的至少一个。
优选地,所述承载体是硅衬底,并且在硅衬底的两侧涂覆抗反射层。
根据本发明的另一个实施例,提供了一种用于制造MEMS器件的方法,包括使用根据本发明的用于MEMS转移的方法将MEMS结构转移到封装衬底上。
根据本发明的另一个实施例,提供了一种使用根据本发明的用于制造MEMS器件的方法制造的MEMS器件。
根据本发明的另一个实施例,提供了一种包含根据本发明的MEMS器件的电子设备。
本发明的发明人发现,在现有技术中,采用临时键合用于MEMS转移。本发明的发明人认识,这样很难直接对承载体上的MEMS进行高温处理。本发明的发明人提出了一种无需临时键合的用于MEMS转移的技术方案。本发明的发明人认识到,本发明所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的,因此,本发明是一种新的技术方案。
另外,本领域技术人员应当理解,尽管现有技术中存在许多问题,但是,本发明的每个实施例或权利要求的技术方案可以仅在一个或几个方面进行改进,而不必同时解决现有技术中或者背景技术中列出的全部技术问题。本领域技术人员应当理解,对于一个权利要求中没有提到的内容不应当作为对于该权利要求的限制。
通过以下参照附图对本发明的示例性实施例的详细描述,本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例,并且连同其说明一起用于解释本发明的原理。
图1示出了根据本发明的方法的一个示意性实施例的流程图。
图2A至图2F示出了根据本发明的用于MEMS转移的一个例子。
图3A至图3E示出了根据本发明的用于MEMS转移的另一个例子。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到:除非另外具体说明,否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的,决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论,但在适当情况下,所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中,任何具体值应被解释为仅仅是示例性的,而不是作为限制。因此,示例性实施例的其它例子可以具有不同的值。
应注意到:相似的标号和字母在下面的附图中表示类似项,因此,一旦某一项在一个附图中被定义,则在随后的附图中不需要对其进行进一步讨论。
下面参照附图来描述本发明的实施例和例子。
图1示出了根据本发明的用于MEMS转移的方法的一个示意性实施例的流程图。
如图1所示,在步骤S1100,在激光透明的承载体的第一表面上沉积激光吸收层。
激光透明的承载体例如可以是蓝宝石衬底、SiC衬底、玻璃衬底、或者石英衬底等。相应地,所使用的激光可以是紫外激光,例如,深紫外激光。例如,可以采用普通的准分子激光器。例如,激光的波长是193nm、248nm或者308nm。
此外,激光透明的承载体例如可以是硅衬底,并且,所使用的激光可以是红外激光,或者近红外激光。目前,在晶圆制造业,硅衬底非常普遍,并且是一种成本高效的承载体。另外,为了增强通过硅衬底的激光透射率,可以在硅衬底的两面涂覆抗反射层。
激光吸收层的材料例如可以是电介质、金属和/或合金、以及聚合物中的至少一种。例如,所述激光吸收层的材料是多晶硅或金属氧化物。
例如,沉积激光吸收层的方法可以是低压化学气相沉积法(LPCVD)。可以通过LPCVD法在承载体(例如蓝宝石或者硅)上沉积多晶硅。沉积时的处理温度例如可以大于或等于570℃。可选地,也可以通过常压化学气相沉积法(APCVD)来沉积激光吸收层。
在本发明的技术方案中,不是通过临时键合来连接承载体和MEMS结构,而是通过一般的半导体制造工艺来连接承载体和MEMS结构。以这种方式,在后续的处理过程中,承载体和MEMS结构之间的连接能够承受更高的温度。
在步骤S1200,在激光吸收层上形成MEMS结构。
例如,在形成MEMS结构的过程中,可以直接在承载体上对MEMS结构执行处理。
在现有技术中,由于采用的是临时性的键合,因此,在承载体上对MEMS进行处理时所能容忍的最高温度不超过400℃。然而,在本发明中,由于采用的是一般的半导体制造工艺,例如沉积,因此,在承载体上对MEMS进行处理时所能容忍的最高温度可以超过400℃。例如,所述处理的温度可以是大于或等于420℃的温度。换句话说,除了其他方面之外,本发明可以进一步地在对激光吸收层上的MEMS结构的处理温度方面与现有技术是不同的。本领域技术人员应当理解,这里所述的处理的温度指的是,该温度在处理过程中在器件上曾经被施加过,而不是指,在处理过程中一直保持该温度。
由于通过本发明的方案,相对于现有技术,在承载体上能够容忍更高的处理温度,因此,本发明能够以低成本且简单的方式,给技术人员提供更多且更灵活的方式来处理承载体上的MEMS结构。例如,所述处理包括培烧处理、退火处理、外延材料沉积中的至少一种。
例如,可以在激光吸收层上进行兼容高温的底电极沉积和构图。例如,底电极的材料是Ta、TaN、W、TiW、或TiN等。
例如,还可以在激光吸收层上沉积压电层。例如,可以对压电层进行培烧处理。例如,培烧处理的温度大于或等于600℃;例如,优选地,大于或等于700℃;例如,在700℃到1100℃之间。例如,可以对压电层进行层叠处理。
例如,可以直接在承载体(激光吸收层)上通过LPCVD或者APCVD来制造高质量的MEMS结构。例如,可以直接在承载体(激光吸收层)上进行沉积、掺杂、退火等。例如,在大于或等于600℃的温度下对多晶硅进行处理。
例如,还可以直接在承载体(激光吸收层)上进行外延材料沉积。例如,对硅进行外延沉积时的温度大于或等于1000℃。
本领域技术人员应当理解,激光吸收层可以是MEMS结构的一部分。例如,MEMS结构一部分可以是不透光的,并且可以在该部分吸收激光,从而实现剥离。
在步骤S1300,将MEMS结构附着到接收体上。
所述接收体例如是接收晶圆。或者,所述接收体例如是封装衬底或者组装衬底,例如接收晶粒(die)。
在步骤S1400,从承载体侧执行激光剥离,以去除承载体。例如,可以从承载体的与第一表面相对的第二表面照射激光,以进行剥离。
在一个实施方式中,在接收体是接收晶圆的情况下,可以在晶圆级执行激光剥离(S1400);以及在激光剥离步骤(S1400)之后,在接收晶圆上切割MEMS结构。这种方式的有利之处在于,可以重新利用承载体,从而进一步降低成本。
在另一个实施方式中,在接收体是诸如晶粒的组装衬底的情况下,可以在形成MEMS结构的步骤(S1200)中分割MEMS结构;以及在诸如晶粒级的组装级执行所述激光剥离。
例如,根据本发明,在承载体上产生MEMS结构时,不采用临时键合,而是使用一般的半导体制造工艺,例如沉积,从而在后续处理中能够容忍更高的处理温度。通过这种方式,相对于现有技术,可以以简单的方式直接在承载体上产生更高品质的MEMS结构。另外,通过使用激光剥离来实现MEMS结构的转移,从而可以使得这种更高品质的MEMS结构的转移能够大规模地应用于工业生产中。
在另一个实施例中,可以将根据本发明的用于MEMS转移的方法应用于制造MEMS器件的方法。例如,在用于制造MEMS器件的方法中,使用根据本发明的用于MEMS转移的方法将MEMS结构转移到封装衬底上。
在又一个实施例中,可以使用根据本发明的用于制造MEMS器件的方法来制造MEMS器件。例如,MEMS器件的例子包括传感器、加速度计等。
通过本发明的技术方案,可以实现高品质、低成本的MEMS器件。由于通过根据本发明的MEMS转移方法和/或制造方法,能够直接在承载体上执行较高温度的处理,因此,在承载体上形成MEMS结构时的处理更加灵活。因而,在同等条件下,相对于现有技术,本发明可以实现更薄的MEMS器件结构封装。
在再一个实施例中,可以在诸如手机、平板电脑等的电子设备中包含根据本发明的MEMS器件。
下面参照图2A至2F以及图3A至图3E来描述可以应用本发明的两个例子。
图2A至图2F示出了根据本发明的用于MEMS转移的一个例子。
在图2A中,例如通过LPCVD,在大于570℃的温度下,在承载体1上沉积激光吸收层2。承载体1例如可以是蓝宝石衬底或者硅衬底。激光吸收层2例如可以是多晶硅。
在图2B中,在激光吸收层2上以高温沉积底电极3,并对底电极3进行构图。底电极3的材料例如可以是Ta、TaN、W、TiW、或TiN等。
在图2C中,在底电极3上沉积压电层4(例如,PZT材料),以例如大于600℃的温度对压电层4进行培烧,并进行层叠。在压电层4上形成顶电极5,并对压电层4和顶电极5进行构图。
在图2D中,对MEMS结构进行其他处理。例如,可以对MEMS结构进行密封、封装7等。可以在MEMS结构中形成接垫或凸起物6,例如金凸块或涂有金盖的Ni/Cu柱,或者在MEMS结构中进行焊料后丝网印刷或分配,等等。
可选地,可以在MEMS结构被转移到接收体上之前,在承载体1上将所形成的MEMS结构分割成晶粒。
在图2E中,将所形成的MEMS结构附接到接收体(封装衬底)8上。
在图2F中,通过激光剥离,将承载体1从MEMS结构上去除。
例如,在图2A至图2F所示的例子中的MEMS器件中,使用倒装芯片(flip-chip)技术将垂直引线设置到封装衬底上。
图3A至图3E示出了根据本发明的用于MEMS转移的另一个例子。
在图3A中,例如通过LPCVD,在大于570℃的温度下,在承载体11上沉积激光吸收层12。承载体11例如可以是蓝宝石衬底或者硅衬底。激光吸收层12例如可以是多晶硅。
在图3B中,在激光吸收层12上以高温沉积底电极13,并对底电极13进行构图。接着,在底电极13上沉积压电层14(例如,PZT材料),以例如大于600℃的温度对压电层14进行培烧,并对压电层14进行层叠和构图。在压电层14上形成顶电极15,并对顶电极15进行构图。
在图3C中,例如通过金属沉积/构图或剥离,在MEMS结构中形成接垫16。接着,对MEMS结构进行其他处理。例如,可以对MEMS结构进行密封、封装17等。
可选地,可以在MEMS结构被转移到接收体上之前,在承载体11上对所形成的MEMS结构进行分割。
在图3D中,将所形成的MEMS结构附接到接收体(封装衬底)18上。
在图3E中,通过激光剥离,将承载体11从MEMS结构上去除。
例如,在图3A至图3E所示的例子中,MEMS器件是打线(wire-bond)封装的。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明,但是本领域的技术人员应该理解,以上例子仅是为了进行说明,而不是为了限制本发明的范围。本领域的技术人员应该理解,可在不脱离本发明的范围和精神的情况下,对以上实施例进行修改。本发明的范围由所附权利要求来限定。
Claims (18)
1.一种用于MEMS转移的方法,包括:
在激光透明的承载体的第一表面上沉积激光吸收层;
在激光吸收层上形成MEMS结构;
将MEMS结构附着到接收体上;以及
从承载体侧执行激光剥离,以去除承载体。
2.根据权利要求1所述的方法,其中,在激光透明的承载体的第一表面上沉积激光吸收层的步骤还包括:通过低压化学气相沉积或者常压化学气相沉积来沉积激光吸收层。
3.根据权利要求1或2所述的方法,其中,在沉积激光吸收层的过程中采用大于或等于570℃的温度。
4.根据权利要求1或2所述的方法,其中,所述激光吸收层的材料包括电介质、金属和/或合金以及聚合物中的至少一种。
5.根据权利要求1或2所述的方法,其中,所述激光吸收层的材料包括多晶硅和金属氧化物中的至少一种。
6.根据权利要求1所述的方法,其中,在激光吸收层上形成MEMS结构的步骤还包括:直接在承载体上对MEMS执行处理。
7.根据权利要求6所述的方法,其中,所述处理包括培烧处理、退火处理、外延材料沉积中的至少一种。
8.根据权利要求6所述的方法,其中,所述处理的温度大于或等于420℃的温度。
9.根据权利要求8所述的方法,其中,所述处理的温度大于或等于600℃。
10.根据权利要求9所述的方法,其中,所述处理的温度大于或等于700℃。
11.根据权利要求9所述的方法,其中,所述处理的温度大于或等于1000℃。
12.根据权利要求1所述的方法,其中,所述接收体是接收晶圆,所述从承载体侧执行激光剥离的步骤是在晶圆级执行的,以及所述方法还包括:在去除承载体之后,在接收晶圆上切割MEMS结构。
13.根据权利要求1所述的方法,其中,所述接收体是组装衬底,在激光吸收层上形成MEMS结构的步骤还包括分割MEMS结构,以及所述从承载体侧执行激光剥离的步骤是在组装级执行的。
14.根据权利要求1所述的方法,其中,所述承载体是蓝宝石、SiC、玻璃和石英中的至少一个。
15.根据权利要求1所述的方法,其中,所述承载体是硅衬底,并且在硅衬底的两侧涂覆抗反射层。
16.一种用于制造MEMS器件的方法,包括使用根据权利要求1所述的方法将MEMS结构转移到封装衬底上。
17.一种使用根据权利要求16所述的方法制造的MEMS器件。
18.一种包含根据权利要求17所述的MEMS器件的电子设备。
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