JP6405465B2 - Memsの搬送方法、製造方法、デバイス及び機器 - Google Patents
Memsの搬送方法、製造方法、デバイス及び機器 Download PDFInfo
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Description
Claims (16)
- MEMS搬送に用いられる方法であって、
レーザー透明性のキャリアの第1表面にレーザー吸収層を蒸着させることと、
レーザー吸収層にMEMS構造を形成することと、
MEMS構造を吸収体に付着させることと、
キャリアを除去するために、キャリア側からレーザー剥離を実行することと、
を含むことを特徴とする方法。 - レーザー透明性のキャリアの第1表面にレーザー吸収層を蒸着させるステップは、さらに、低圧化学気相蒸着又は常圧化学気相蒸着によりレーザー吸収層を蒸着させることを含む、ことを特徴とする請求項1に記載の方法。
- レーザー吸収層を蒸着させる過程に570℃以上の温度を用いる、ことを特徴とする請求項1又は2に記載の方法。
- 前記レーザー吸収層の材料は、誘電体、金属及び/又は合金及びポリマーの少なくとも1つを含む、ことを特徴とする請求項1又は2に記載の方法。
- 前記レーザー吸収層の材料は、ポリシリコンと金属酸化物の少なくとも1つを含む、ことを特徴とする請求項1又は2に記載の方法。
- レーザー吸収層にMEMS構造を形成するステップは、さらに、直接キャリアにおいてMEMSに対する処理を実行することを含む、ことを特徴とする請求項1に記載の方法。
- 前記処理は、焙焼処理、アニール処理及びエピタキシャル材料蒸着の少なくとも1つを含む、ことを特徴とする請求項6に記載の方法。
- 前記処理の温度は420℃以上の温度である、ことを特徴とする請求項6に記載の方法。
- 前記処理の温度は600℃以上である、ことを特徴とする請求項8に記載の方法。
- 前記処理の温度は700℃以上である、ことを特徴とする請求項9に記載の方法。
- 前記処理の温度は1000℃以上である、ことを特徴とする請求項9に記載の方法。
- 前記吸収体は吸収ウェハであり、前述のキャリア側からレーザー剥離を実行するステップはウェハレベルで実行されるものであり、前記方法は、さらに、キャリアを除去した後、吸収ウェハにおいてMEMS構造を切断することを含む、ことを特徴とする請求項1に記載の方法。
- 前記吸収体は組立基板であり、レーザー吸収層にMEMS構造を形成するステップは、さらに、MEMS構造を分割することを含み、前述のキャリア側からレーザー剥離を実行するステップは、組立レベルで実行される、ことを特徴とする請求項1に記載の方法。
- 前記キャリアは、サファイア、SiC、ガラス及び石英の少なくとも1つである、ことを特徴とする請求項1に記載の方法。
- 前記キャリアはシリコン基板であり、シリコン基板の両側には反射防止層が塗布されている、ことを特徴とする請求項1に記載の方法。
- 請求項1に記載の方法を用いてMEMS構造を吸収体としてのパッケージ基板に搬送する、ことを特徴とするMEMSデバイスの製造方法。
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PCT/CN2015/075650 WO2016154960A1 (en) | 2015-04-01 | 2015-04-01 | Transfer method, manufacturing method, device and electronic apparatus of mems |
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CN105517948A (zh) | 2016-04-20 |
EP3207568A1 (en) | 2017-08-23 |
US9908775B2 (en) | 2018-03-06 |
WO2016154960A1 (en) | 2016-10-06 |
US20170260045A1 (en) | 2017-09-14 |
JP2018501970A (ja) | 2018-01-25 |
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