CN105514037A - 分离和清洗工艺和系统 - Google Patents
分离和清洗工艺和系统 Download PDFInfo
- Publication number
- CN105514037A CN105514037A CN201510644491.8A CN201510644491A CN105514037A CN 105514037 A CN105514037 A CN 105514037A CN 201510644491 A CN201510644491 A CN 201510644491A CN 105514037 A CN105514037 A CN 105514037A
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- Prior art keywords
- substrate
- cleaning
- package substrate
- chuck
- release coat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Abstract
本发明公开了用于分离和清洗衬底的方法和工具。方法包括:将第一衬底的表面从第二衬底分离;和在分离之后,清洗第一衬底的表面。清洗包括:使清洗机构与第一衬底的表面物理接触。工具包括:分离模块和清洗模块。分离模块包括:第一卡盘、配置为向第一卡盘发射辐射的辐射源和具有真空系统的第一机械臂。真空系统配置为固定衬底和从第一卡盘去除衬底。清洗模块包括:第二卡盘、配置为向第二卡盘喷射流体的喷嘴和具有清洗器件的第二机械臂,第二机械臂配置为使清洗器件与第二卡盘上的衬底物理接触。本发明实施例涉及分离和清洗工艺和系统。
Description
技术领域
本发明实施例涉及分离和清洗工艺和系统。
背景技术
由于各种电子部件(例如,晶体管、二极管、电阻器、电容器等)的集成度不断提高,半导体产业经历了快速的发展。在大多数情况下,这种集成度的提高源自最小部件尺寸的反复减小(例如,将半导体工艺节点朝着亚20nm节点缩减),这允许更多的部件集成在给定的区域内。随着近来对微型化、更高速度、更大带宽以及更低功耗和延迟的要求提高,也产生了对于半导体管芯的更小和更具创造性的封装技术的需要。
与器件的微型化和集成密度的改进相结合,半导体产业开发了新的封装件和用于将半导体器件集成到消费产品中的工艺。存在用于封装这些半导体器件的多种工艺,从而导致多种不同的封装件结构。这些封装件可以提供具有其他部件的半导体器件的减小的覆盖区,例如其他部件可能需要具有更大间距的更大的电连接件。
发明内容
根据本发明的一个实施例,提供了一种方法,包括:将第一衬底的表面从第二衬底分离;以及在分离之后,清洗所述第一衬底的表面,所述清洗包括:使清洗机构与所述第一衬底的表面物理接触。
根据本发明的另一实施例,提供了一种方法,包括:提供通过释放涂层接合至载体衬底的封装件衬底,所述释放涂层位于所述封装件衬底的表面上;分解所述释放涂层和从所述封装件衬底分离所述载体衬底;以及在从所述封装件衬底分离所述载体衬底之后,清洗所述封装件衬底的表面,所述清洗包括:向所述封装件衬底的表面供给流体和使所述封装件衬底的表面与清洗机构接触以从所述封装件衬底的表面物理去除所述释放涂层的残留物。
根据本发明的又一实施例,提供了一种工具,包括:分离模块,包括:第一卡盘,辐射源,配置为向所述第一卡盘发射辐射,和第一机械臂,具有真空系统,所述真空系统配置为固定衬底和将所述衬底从所述第一卡盘去除;以及清洗模块,包括:第二卡盘,喷嘴,配置为向所述第二卡盘喷射流体,和第二机械臂,具有清洗器件,所述第二机械臂配置为使所述清洗器件与所述第二卡盘上的衬底物理接触。
附图说明
当结合附图进行阅读时,从以下详细描述可最佳理解本发明的各方面。应该注意,根据工业中的标准实践,各个部件未按比例绘制。实际上,为了清楚的讨论,各个部件的尺寸可以任意地增大或减小。
图1是根据一些实施例的可以对其施加分离和清洗工艺的简化的封装件衬底的截面图。
图2A至图2G是根据一些实施例的将载体衬底从封装件衬底分离和清洗封装件衬底的工艺。
图3A至图3C是根据一些实施例的用于实施分离和清洗工艺的第一工具的图。
图4A和图4B是根据一些实施例的用于实施分离和清洗工艺的第二工具的图。
图5A至图5C是根据实施例的用于放置和去除盖环的示例性配置的图。
图6A至图6F是根据实施例的用于放置和去除盖环的另一示例性配置的图。
具体实施方式
以下公开内容提供了许多用于实现所提供主题的不同特征的不同实施例或实例。下面描述了组件和布置的具体实例以简化本发明。当然,这些仅仅是实例,而不旨在限制本发明。例诸如,在以下描述中,在第二部件上方或者上形成第一部件可以包括第一部件和第二部件形成为直接接触的实施例,并且也可以包括在第一部件和第二部件之间可以形成额外的部件,从而使得第一部件和第二部件可以不直接接触的实施例。此外,本发明可在各个实例中重复参考标号和/或字母。该重复是为了简单和清楚的目的,并且其本身不指示所讨论的各个实施例和/或配置之间的关系。此外,在本文中将工艺实施例论述为以特定的顺序实施;然而,其他实施例也可以涵盖以任何逻辑顺序实施的其他工艺。
而且,为便于描述,在此可以使用诸如“在…之下”、“在…下方”、“下部”、“在…之上”、“上部”等的空间相对术语,以便于描述诸如图所示的一个元件或部件与另一个(或另一些)元件或部件的关系。除了图中所示的方位外,空间相对术语旨在包括器件在使用或操作中的不同方位。装置可以以其他方式定向(旋转90度或在其他方位上),而在此使用的空间相对描述符可以同样地作相应的解释。
下文中在具体环境中论述一些实施例,即,应用于扇出或扇入晶圆级封装件的分离和清洗工艺。然而,本发明的各个方面可以应用于多种其他环境中,诸如利用释放涂层接合在一起然后随后被分离的任意的部件。此外,在下文中论述对工艺和系统的一些改进,并且本领域普通技术人员将容易理解,可以应用额外的修改。实施例预期这些修改。
图1示出了通过光热转换(LTHC)释放涂层42接合至载体衬底44的诸如扇出或扇入晶圆级封装件的简化的封装件衬底40的截面图。本文中论述的分离和清洗工艺可以应用于图1中的这种结构,但是实施例预期各种其他封装件、封装件衬底和/或部件。
载体衬底44可以是玻璃衬底、硅衬底、氧化铝衬底等并且可以是晶圆。该LTHC释放涂层42位于载体衬底44上。载体衬底44在处理步骤期间提供临时的机械和结构支持以形成封装件衬底40。该LTHC释放涂层42形成在载体衬底44的表面上。例如,LTHC释放涂层42是氧化物、氮化物、有机材料等或它们的组合,诸如聚酰亚胺基材料。可以使用层压、旋涂等或它们的组合来形成LTHC释放涂层42。
封装件衬底40包括一个或多个集成电路管芯46。每个集成电路管芯46包括半导体衬底,诸如掺杂或未掺杂的硅或绝缘体上半导体(SOI)衬底的有源层。半导体衬底可以包括其他元素半导体,诸如锗;包括碳化硅、砷化镓、磷化镓、磷化铟、砷化铟、和/或锑化铟的化合物半导体;包括SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP、和/或GaInAsP的合金半导体;或其组合。也可以使用其他衬底,诸如多层或梯度衬底。诸如晶体管、二极管、电容器、电阻器等的器件可以形成在半导体衬底中和/或上并且可以通过互连结构互连以形成集成电路,例如,通过位于半导体衬底上的一个或多个介电层中的金属化图案来形成互连结构。
诸如导电柱(例如,包括诸如铜的金属)的管芯连接件48位于集成电路管芯46的外部并且机械连接和电连接到相应的集成电路管芯46的可以被称为集成电路管芯46的相应的有源侧的一侧上。管芯连接件48电连接集成电路管芯46的相应的集成电路。
介电材料50位于集成电路管芯46的有源侧上。介电材料50横向地封装管芯连接件48,管芯连接件48的上表面与介电材料50的上表面共平面,并且介电材料50与相应的集成电路管芯46横向地共端点。介电材料50可以是聚合物,诸如聚苯并恶唑(PBO)、聚酰亚胺、苯并环丁烯(BCB)等;诸如氮化硅等的氮化物;或者诸如氧化硅、磷硅酸盐玻璃(PSG)、硼硅酸盐玻璃(BSG)、硼掺杂的磷硅酸盐玻璃(BPSG)等的氧化物;或它们的组合。
集成电路管芯46的背侧或者与有源侧相对的一侧通过粘合剂51粘合至载体衬底44上的LTHC释放涂层42。粘合剂51可以是任何合适的粘合剂、环氧树脂等。
密封剂52至少横向地密封集成电路管芯46。密封剂52具有邻接LTHC释放涂层42的第一表面和与介电材料50和管芯连接件48的上表面共平面的第二表面。密封剂52可以是模塑料、环氧树脂等。
重分布结构54包括位于一个或多个介电层58中的一个或多个金属化图案56。一个或多个金属化图案56的至少一部分通过相应的管芯连接件48电连接至集成电路管芯46上的相应的集成电路。一个或多个金属化图案56可以包括任何的线、通孔、焊盘等或它们的组合并且可以包括诸如金属(如铜、钛、钨、铝等)的导电材料。一个或多个介电层58可以是诸如PBO、聚酰亚胺、BCB等的聚合物;诸如氮化硅等的氮化物;诸如氧化硅、PSG、BSG、BPSG等的氧化物;或它们的组合。
一个或多个金属化图案56包括暴露在重分布结构54上的下部金属60。诸如焊料球(如球栅阵列(BGA)球)的外部连接件62位于下部金属60上。在一些实施例中,外部连接件62包括诸如Sn-Ag合金、Sn-Ag-Cu合金等的焊料,并且可以是无铅或含铅的。
在图1中的配置中,封装件衬底40包括未分割的封装件。封装件衬底40可以包括任意数量的封装件。在载体衬底44上形成和处理封装件衬底40,载体衬底44可以是晶圆。如上所述,封装件衬底40可以具有各种修改或配置,并且图1仅仅是实例。可以使用其他封装件衬底。
图2A至图2G示出了根据一些实施例的用于从封装件衬底40分离载体衬底44和清洗封装件衬底40的工艺。在图2A中,封装件衬底40通过LTHC释放涂层42接合至载体衬底44,封装件衬底40使用胶带72安装在卡盘70上并且位于框架74内。封装件衬底40安装至胶带72上,从而使得载体衬底44向上远离卡盘70,例如,诸如向上远离粘合至胶带72的封装件衬底40的外部连接件62。
在图2B中,实施分离工艺。辐射照射76扫描穿过载体衬底44到达至少LTHC释放涂层42。当辐射照射76撞击在LTHC释放涂层42上时,LTHC释放涂层42分解,从而将载体衬底44从封装件衬底40分离。在一些实施例中,辐射照射76是激光扫描、单次宽区域照射或任何其他照射并且可以使用红外(IR)光、紫外(UV)光等。辐射照射76的具体细节可取决于释放涂层所使用的材料。例如,当释放涂层是UV胶时,可以使用UV光。可以使用任何可接受的分离工艺以使封装件衬底40和载体衬底44之间的释放涂层分解。在分离之后,去除载体衬底44,并且如图2C所示,LTHC释放涂层42的残留物78可以保留在封装件衬底40的表面80上。
在图2D中,盖环82放置在框架74上方并且接触胶带72。虽然示出在卡盘70上,封装件衬底40可以转移至具有不同卡盘的其他模块,或者可以随后在相同模块中的相同的卡盘70上处理,如下文中更详细论述的。因此,可以在与上述步骤相同的模块(例如,具有相同的卡盘)中发生或者可以在不同的模块(例如,具有不同的卡盘)中实施随后论述的工艺。
盖环82覆盖框架74和覆盖胶带72的不直接位于封装件衬底40下面的外部部分。盖环82环绕封装件衬底40。盖环82可以接触胶带72以形成密闭或半密闭的密封件,这可以防止胶带72上的粒子污染。如图所示,盖环82包括边缘部分82a和延伸部分82b。边缘部分82a固定至框架74并且基本上是在与胶带72平行的平面内。延伸部分82b从边缘部分82a延伸并且接触胶带72。延伸部分82b环绕封装件衬底40的横向侧边。在延伸部分82b和封装件衬底40的横向侧边之间可以存在间隙。在这些图中示出的盖环82仅仅是实例,并且盖环可以具有多种修改。
在图2E中,清洗器件84接触封装件衬底40的表面80以从表面80去除残留物78。清洗器件84可以是刷子、海绵等或它们的组合。刷子可以包括基底和附接至基底的刷毛。刷毛可以是柔软的材料的梳状结构。示例性材料包括聚乙烯醇(PVA)、马海毛、海绵、纤维、布、尼龙、人造丝、涤纶、聚合物等。海绵可以包括PVA海绵等。清洗器件84在表面80上方经过并且与表面80接触以从表面物理去除残留物78。清洗机构不包括仅使用化学物质并且不包括仅使用化学机械抛光(CMP)工艺和工具。
流体88从喷嘴86喷出。当清洗器件84经过表面80上方时,流体88可以冲洗表面80。因此,流体88可以帮助从表面80去除残留物78和粒子。流体88可以是去离子(DI)水、异丙醇(IPA)、它们的组合等。清洗器件84可以以任意次数在表面80上方经过并且与表面80接触以充分地去除残留物78。
在图2F中,封装件衬底40的表面80被示出为不含粒子和残留物78,这包括基本上所有的粒子和残留物被从表面80去除。在图2G中,去除盖环82,并且封装件衬底40被基本上传送回到框架盒。随后,切割或锯切封装件衬底40以分割形成在封装件衬底40中的单独的封装件。
图3A示出了根据一些实施例的用于实施分离和清洗工艺的第一工具100,并且图3B和图3C进一步示出了图3A中的工具100的模块的各个方面。工具100包括设备前端模块(EFEM)102、预对准模块104、分离模块106、载体再循环模块108和清洗模块110。工具100还包括控制盒116和电源118。控制盒116可以包括控制工具100的自动化工艺的一个或多个电子控制器和/或处理器,诸如根据控制盒116中的存储器或距离工具100较远的存储器(例如,非暂时性介质)供应的配方。工具100可以具有一个控制盒116以自动化和控制工具100中的所有的工具和模块,或者可以具有不同的控制盒116以自动化和控制工具100中的一个或多个模块以及模块内的工具。电源118向工具100内的各个组件供应适当的电源。工具100可以具有一个电源118以向工具100中的所有模块提供电源,或者可以具有不同的电源118以向工具100中的一个或多个模块提供电源。框架盒112和前开式统集盒(FOUP)114被示出为连接至工具100的EFEM102。
EFEM102包括传输工具120,传输工具120能够在模块之间传输衬底并且将衬底传输至框架盒112和FOUP114以及从框架盒112和FOUP114传输出。传输工具120可以包括机械臂、传输向导等。传输工具120可以受到控制盒116中的电子控制器和/或处理器的控制,从而使得诸如根据配方使衬底的传输自动化。
预对准模块104包括能够适当地对准衬底以用于处理的对准工具。具有待分离的衬底(例如,封装件衬底40和载体衬底44)的框架盒112连接至EFEM102。EFEM102中的传输工具120将衬底40和44从框架盒112传输至预对准模块104中的对准工具,在预对准模块104中,将衬底40和44对准以用于随后的处理。对准工具,或者更进一步地,预对准模块104,可以受到控制盒116中的电子控制器和/或处理器的控制,从而使得诸如根据配方使衬底的对准自动化。
参考图3A和图3B,分离模块106包括辐射源122、具有框架126的卡盘124、电机128、机械臂130和真空系统132。具有框架126的卡盘124配置为在分离工艺期间支撑衬底(例如,封装件衬底40和载体衬底44)。电机128配置为旋转136卡盘124,并且因此旋转卡盘124上的衬底。辐射源122配置为向着卡盘124上的衬底发射辐射134。辐射源122可以以任何可接受的形式发射任何适当的辐射,诸如IR线、UV线等,诸如能够分解用于接合衬底40和44的释放涂层的激光或任何可接受的照射。真空系统132安装在机械臂130上和/或集成在机械臂130内。机械臂130配置为旋转138和/或伸缩140以当载体衬底44被分离和传输至EFEM102的传输工具120时使真空系统132定位为与载体衬底44接触。真空系统132配置为当与载体衬底44充分接触时提供压力差(诸如真空)以将载体衬底44固定至机械臂130。可以通过控制盒116中的电子控制器和/或处理器来控制分离模块106中的每个工具和部件,从而使得诸如根据配方使衬底的分离和传输自动化。
分离模块106可以实施结合图2A至图2C论述的工艺。如图2A所示,封装件衬底40通过释放涂层接合至载体衬底44,封装件衬底40使用胶带(未示出)安装在卡盘124上并且位于框架126内。EFEM102的传输工具120可以将衬底40和44从预对准模块104传输出并且将衬底40和44安装在卡盘124上。一旦安装,电机128可以开始旋转136卡盘124以及旋转衬底40和44。旋转136可有利于辐射134照射,诸如激光扫描。在其他实施例中,不需要旋转卡盘和衬底,例如,如果扫描仅由辐射源122实施或者如果没有使用扫描,诸如当采用整个区域照射时。
辐射源122提供导向衬底44和40的辐射134以实施分离工艺,诸如上文参考图2B论述的。如上所述,辐射134可扫描穿过载体衬底44到达至少释放涂层以分解释放涂层,从而将载体衬底44从封装件衬底40分离。任何可接受的分离工艺可以用于分解封装件衬底40和载体衬底44之间的释放涂层。一旦释放涂层充分分解,如果在分离期间使用了旋转136,则电机128终止卡盘124和衬底40和44的旋转136。
在分离之后,机械臂130旋转138以使真空系统132定位为直接位于载体衬底44上方,和然后,向下伸缩140直到真空系统132接触载体衬底44。一旦真空系统132接触载体衬底44,则打开真空系统132和/或增大压力差,从而固定载体衬底44。机械臂130然后向上伸缩140以将载体衬底44从封装件衬底40分离。然后机器臂130可以旋转138至不直接位于封装件衬底40上方的位置。然后传输工具120可以固定载体衬底44,和真空系统132可以释放载体衬底44。然后传输工具120将载体衬底44传输至载体再循环模块108。
载体再循环模块108可以包括任何合适的工具来修复载体衬底以用于随后再利用。例如,载体再循环模块108可以包括具有合适的溶剂的浸泡罐,可以将载体衬底放置在浸泡罐内以去除诸如来自与封装件衬底接合的释放涂层的粒子或残留物。一旦载体衬底44被适当地修复,EFEM102的传输工具120将载体衬底44传输至FOUP114,然后FOUP114可以被分离和传输至另一工具以再利用载体衬底44。载体再循环模块108的浸泡罐和/或任何其他工具可以受到控制盒116中的电子控制器和/或处理器的控制,从而使得诸如根据配方使在载体再循环模块108中实施的工艺自动化。
如图2C所示,在分离之后,释放涂层的残留物可能保持在封装件衬底40上。EFEM102的传输工具120将封装件衬底40传输至清洗模块110,从而可以对封装件衬底40实施清洗工艺以去除任何残留物和粒子。
参考图3A和图3C,清洗模块110包括具有框架152的卡盘150、电机154、盖环156、机器臂158和清洗系统。具有框架152的卡盘150配置为在清洗工艺期间支撑衬底,例如,封装件衬底40。电机154配置为旋转168卡盘150,并且因此旋转卡盘150上的衬底。
例如,盖环156可以是清洗模块110中的可分离的组件或者可以附接至框架152。在一些实施例中,如图5A和5B所示,盖环156通过清洗模块110中的往复臂252放置在框架152和卡盘150上。为了放置盖环156,往复臂可以伸出250,诸如从卡盘150之上向下伸出,并且将盖环156放置在框架152上,其中,一个或多个夹具254可以将盖环156固定至框架152。如图5B和5C所示,为了去除盖环156,往复臂252可以伸出,固定盖环156并且从框架152去除盖环156,诸如通过回缩256往复臂252。在其他实施例中,盖环156附接到框架152,诸如通过铰链机构。在图6A至图6F中示出了实例,其中,图6A至图6C是截面图,并且图6D至图6F是俯视图。盖环156可以包括多个单独的部分156a,每个部分156a通过铰链机构附接至框架152。当将放置盖环156以使用时(例如,如图6B和图6E所示将被闭合),例如,每个部分156a可以通过铰链机构和/或伺服电机旋转260至如图6A、图6B、图6D和图6E中所示的位置。当将移走盖环156时(例如,或者如图6C和图6F所示被打开),如图6C和图6F所示,每个部分156a可以通过铰链机构和/或伺服电机旋转262,例如,远离卡盘150。可以使用盖环156的其他配置。
清洗系统被安装在机械臂158上和/或集成到机械臂158内。清洗系统包括清洗器件160、喷嘴162、用于向清洗器件160供给流体的管道164和用于向喷嘴162供给流体的管道166。清洗器件160可以是刷子、海绵等或它们的组合。刷子可以包括基底和附接至基底的刷毛。刷毛可以是柔软的材料的梳状结构。示例性材料包括PVA、马海毛、海绵、纤维、布、尼龙、人造丝、涤纶、聚合物等。海绵可以包括PVA海绵等。可以通过管道164和166从清洗模块110中的槽或储液器或从远离清洗模块110的位置供给流体。虽然在这个实施例中,喷嘴162被示出为位于机械臂158上或者集成到机械壁158内,喷嘴162可以处于清洗模块110中的与机械臂158分离的固定位置或者可以处于与清洗器件160分离的不同的机械臂上。
机械臂158配置为旋转170和/或伸缩172以将清洗系统定位为与封装件衬底40接触。清洗系统配置为使得清洗器件160可以接触封装件衬底40并且喷嘴162可以在清洗工艺期间在封装件衬底40上喷射流体。清洗模块110中的每个工具和组件可以受到控制盒116中的电子控制器和/或处理器的控制,从而使得诸如根据配方使衬底的清洗自动化。
清洗模块110可以实施结合图2D至图2G论述的工艺。如图2D中所示,封装件衬底40使用胶带(未示出)安装在卡盘150上和框架152内。EFEM102的传输工具120可以将封装件衬底40从分离模块106传输出并且将封装件衬底40安装在卡盘150上。一旦安装,盖环156放置在框架152和卡盘150上。盖环156的放置可使用往复臂或盖环部分的旋转以如上所述“闭合”盖环156。然后,电机154可以开始旋转168卡盘150和封装件衬底40。旋转168可以有利于清洗。在其他实施例中,不需要旋转卡盘和封装件衬底。
机械臂158旋转170以使清洗系统定位为直接位于封装件衬底40之上。机械臂158然后向下伸缩172,直到清洗器件160接触封装件衬底40。清洗器件160可以开始位于或靠近封装件衬底40的中心,并且机械臂158可以朝向封装件衬底40的外边缘旋转170,同时电机154旋转卡盘150和封装件衬底40。以这种方式,清洗器件160可以接触并且清洗封装件衬底40的基本上整个表面(例如,图2E中的表面80)。一旦清洗器件160到达封装件衬底40的外边缘,机械臂158可以远离封装件衬底40向上伸缩172和旋转170。清洗器件160接触封装件衬底40和在封装件衬底40上方经过的这些动作可以重复任意次数。清洗器件160可以以不同方式接触封装件衬底40,并且可以使用用于使清洗器件在封装件衬底40上方经过的不同技术。
流体可以以许多不同的方式供给至封装件衬底40以促进清洗工艺。例如,一旦直接位于封装件衬底40之上,喷嘴162可以开始将通过管道166供应的流体(诸如DI水IPA等)喷射至封装件衬底40上,诸如图2E所示。仅简单地当清洗器件160与封装件衬底40开始接触时、仅贯穿清洗器件160与封装件衬底40的接触、贯穿清洗器件160与封装件衬底40的接触以及在清洗器件160与封装件衬底40接触之后或者它们之间的任何变化可以喷射通过管道166和喷嘴162供给的流体。
一旦机械臂158离开(isclearof)卡盘150上的封装件衬底40,可以通过管道164将诸如DI水等的流体供应至清洗器件160上以从清洗器件160冲洗掉在清洗期间收集到清洗器件160上的任意的粒子。此外,通过管道164和清洗器件160供给的流体可以在清洗工艺期间补充由喷嘴162喷射的流体。
在切断供给至封装件衬底40的流体并且清洗器件160不接触封装件衬底40之后,电机154可以持续旋转168卡盘150和封装件衬底40(其中可以包括增加旋转速度),从而使得可以通过旋转168的离心力去除封装件衬底40上的任何流体或松散粒子。清洗封装件衬底40的方式(诸如包括清洗器件160如何接触封装件衬底40和如何通过管道164和166供给流体)可以改变为许多不同的方式,并且本文中论述的实施例仅仅是如何实施清洗的实例。
一旦卡盘150的旋转168停止,诸如通过使用往复臂或通过旋转盖环部分“打开”盖环156来去除盖环156。然后,EFEM102的传输工具120将封装件衬底40从清洗模块110中的卡盘150传输至框架盒112。然后框架盒112可以从工具100的EFEM102离开并且被移至另一工具以用于随后的处理,诸如将封装件衬底40锯切或切割成单独的封装件。
图4A示出了根据一些实施例的用于分离和清洗工艺的第二工具200,并且图4B进一步示出了图4A中的工具200的模块的各方面。工具200包括许多与图3A中的工具100相同的模块,包括EFEM102、预对准模块104和载体再循环模块108。这些模块可以包括相同的工具、功能相同并且以与上文参考图3A至图3B论述的相同的方式控制。
工具200包括分离和清洗模块(DBCM)202和204。如图4A所示,工具200包括两个DBCM202和204,并且其他实施例在工具中包括一个DBCM或多个DBCM。每个DBCM202和204包括上文在图3B和图3C中论述的分离模块106和清洗模块110的基本上所有的工具和功能。每个DBCM202和204包括辐射源122、机器臂130、真空系统132、机器臂158、清洗器件160、喷嘴162、以及管道164和166。这些工具配置相同,执行相同的功能,并且与上文结合图3B和图3C论述的相同的方式控制。每个DBCM202和204还包括具有框架121的卡盘210、盖环214和电机216。卡盘210、框架212、盖环214、电机216与在图3B和图3C中论述的分别具有框架126和152的卡盘124和150、盖环156和电机128和154基本上相同地配置、基本上实施相同的功能并且基本上以相同的方式控制,不同之处在于需要在分离模块106和清洗模块110之间传输封装件衬底。
对于图3A中的工具100,EFEM102中的传输工具120将衬底40和44从框架盒112传输至预对准模块104中的对准工具,其中,对准衬底以用于随后的处理。
每个DBCM202和204可以实施结合图2A至图2G论述的工艺。如在图2A中,通过释放涂层接合至载体衬底44的封装件衬底40使用胶带(未示出)安装在卡盘210上并且位于框架121内。EFEM102的传输工具120可以从预对准模块104传输衬底40和44和将衬底安装在卡盘210上。一旦安装,如果使用这种旋转218,电机216可以开始旋转218卡盘210和衬底40和44。
辐射源122提供导向衬底44和40的辐射134以实施分离工艺,诸如上文结合图2B和图3B所论述的。如前文所述,任何可接受的辐射可以用来分解释放涂层以用于分离。如果在分离期间使用旋转218,一旦释放涂层充分分解,则电机216终止旋转218卡盘210和衬底40和44。
在分离之后,机械臂130旋转138以使真空系统132定位为直接位于载体衬底44上方,和然后,向下伸缩140直到真空系统132接触载体衬底44。一旦真空系统132接触载体衬底44,则打开真空系统132和/或增大压力差,从而固定载体衬底44。然后机械臂130向上伸缩140以将载体衬底44从封装件衬底40分离。然后机器臂130可以旋转138至不直接位于封装件衬底40上方的位置。然后传输工具120可以固定载体衬底44,和真空系统132可以释放载体衬底44。然后传输工具120将载体衬底44传输至载体再循环模块108,其可以如上文论述的那样处理载体衬底44。
如图2C所示,在分离之后,释放涂层的残留物可能保持在封装件衬底40上。然后在DSCM202或204中对封装件衬底40实施清洗工艺以去除任何残留物和粒子。在这个实施例中,封装件衬底40保持固定至卡盘210以用于随后的清洗工艺。盖环214放置在框架212和卡盘210上。可以使用往复臂或盖环部分的旋转以“闭合”盖环214来放置盖环214。电机216可以开始旋转218卡盘210和封装件衬底40。旋转218可以有利于清洗。在其他实施例中,不需要卡盘和封装件衬底的旋转。
机械臂158旋转170以使清洗系统定位为直接位于封装件衬底40之上。机械臂158然后向下伸缩172直到清洗器件160接触封装件衬底40。清洗器件160可以开始位于或靠近封装件衬底40的中心,并且机械臂158可以朝向封装件衬底40的外边缘旋转170,同时电机216旋转卡盘210和封装件衬底40。以这种方式,清洗器件160可以接触并且清洗封装件衬底40的基本上整个表面(例如,图2E中的表面80)。一旦清洗器件160到达封装件衬底40的外边缘,机械臂158可以远离封装件衬底40向上伸缩172和旋转170。清洗器件160接触封装件衬底40和在封装件衬底40上方经过的这些动作可以重复任意次数。清洗器件160可以以不同方式接触封装件衬底40,并且可以使用用于使清洗器件在封装件衬底40上方经过的不同技术。
流体可以以许多不同的方式供给至封装件衬底40以促进清洗工艺。例如,一旦直接位于封装件衬底40之上,喷嘴162可以开始将通过管道166供应的流体(诸如DI水IPA等)喷射至封装件衬底40上,诸如图2E所示。可以如上所述来分配和供给来自喷嘴162和管道166的流体。
一旦机械臂158离开卡盘150上的封装件衬底40,可以通过管道164将诸如DI水等的流体供应至清洗器件160上以从清洗器件160冲洗掉在清洗期间收集到清洗器件160上的任意的粒子。此外,通过管道164和清洗器件160供给的流体可以在清洗工艺期间补充由喷嘴162喷射的流体。
在切断供给至封装件衬底40的流体并且清洗器件160不接触封装件衬底40之后,电机216可以持续旋转218卡盘210和封装件衬底40(其中可以包括增加旋转速度),从而使得可以通过旋转的离心力去除封装件衬底40上的任何流体或松散颗粒。清洗封装件衬底40的方式和本文中论述的实施例仅仅是可以如何实施清洗的实例。
一旦卡盘210的旋转218停止,诸如通过使用往复臂或通过旋转盖环部分“打开”盖环214来去除盖环214。然后,EFEM102的传输工具120将封装件衬底40从DBCM202或204中的卡盘210传输至框架盒112。然后框架盒112可以从工具200的EFEM102离开并且被移至另一工具以用于随后的处理,诸如将封装件衬底40锯切或切割成单独的封装件。
实施例可以实现优势。在接合工艺中使用框架式卡盘可以增加工艺稳定性,这可以提高制造的封装件的产量。因此,封装件的处理可以变得更强健。此外,在清洗期间使用盖环可以帮助避免胶带的粒子污染或玷污,其中,封装件衬底固定在胶带上。此外,将分离和清洗工艺集成到单个工具内,这可以完全自动化,可以降低生产车间中这些工具所需要的空间,并且可以降低劳动成本。更进一步,通过使用物理清洗工艺,诸如利用清洗器件,可以避免苛刻的化学溶剂,这可以导致清洗工艺更加绿色或更加环境友好。
根据实施例,一种方法包括:将第一衬底的表面从第二衬底分离;和在分离之后,清洗第一衬底的表面。清洗包括:使清洗机构与第一衬底的表面物理接触。
根据另一实施例,一种方法包括:提供通过释放涂层接合至载体衬底的封装件衬底,释放涂层位于封装件衬底的表面上;分解释放涂层和从封装件衬底分离载体衬底;以及在从封装件衬底分离载体衬底之后,清洗封装件衬底的表面。清洗包括:向封装件衬底的表面供给流体和使封装件衬底的表面与清洗机构接触以从封装件衬底的表面物理去除释放涂层的残留物。
另一实施例是一种工具。工具包括:分离模块和清洗模块。分离模块包括:第一卡盘、配置为向第一卡盘发射辐射的辐射源和具有真空系统的第一机械臂。真空系统配置为固定衬底和从第一卡盘去除衬底。清洗模块包括:第二卡盘、配置为向第二卡盘喷射流体的喷嘴和具有清洗器件的第二机械臂,第二机械臂配置为使清洗器件与第二卡盘上的衬底物理接触。
根据本发明的一个实施例,提供了一种方法,包括:将第一衬底的表面从第二衬底分离;以及在分离之后,清洗所述第一衬底的表面,所述清洗包括:使清洗机构与所述第一衬底的表面物理接触。
在上述方法中,所述分离包括使位于所述第一衬底的表面上并且位于所述第一衬底和所述第二衬底之间的释放涂层分解,在所述分离之后,所述释放涂层的残留物保持在所述表面上,在清洗所述表面期间,所述清洗机构物理去除所述残留物。
在上述方法中,在清洗所述表面期间,将所述第一衬底安装在卡盘上的胶带上,在清洗所述表面期间,盖环环绕所述第一衬底并且接触和覆盖所述胶带。
在上述方法中,所述清洗机构包括海绵。
在上述方法中,所述清洗机构包括刷子。
在上述方法中,清洗所述第一衬底的表面包括向所述第一衬底的表面供给流体。
在上述方法中,所述流体包括去离子水。
在上述方法中,所述流体包括异丙醇。
根据本发明的另一实施例,提供了一种方法,包括:提供通过释放涂层接合至载体衬底的封装件衬底,所述释放涂层位于所述封装件衬底的表面上;分解所述释放涂层和从所述封装件衬底分离所述载体衬底;以及在从所述封装件衬底分离所述载体衬底之后,清洗所述封装件衬底的表面,所述清洗包括:向所述封装件衬底的表面供给流体和使所述封装件衬底的表面与清洗机构接触以从所述封装件衬底的表面物理去除所述释放涂层的残留物。
在上述方法中,所述流体包括去离子水、异丙醇或它们的组合。
在上述方法中,所述清洗机构包括刷子、海绵或它们的组合。
在上述方法中,在所述清洗期间,所述封装件衬底位于卡盘上的胶带上,在所述清洗期间,盖环覆盖所述胶带的之上没有所述封装件衬底的部分。
在上述方法中,分解所述释放涂层包括使用激光扫描。
根据本发明的又一实施例,提供了一种工具,包括:分离模块,包括:第一卡盘,辐射源,配置为向所述第一卡盘发射辐射,和第一机械臂,具有真空系统,所述真空系统配置为固定衬底和将所述衬底从所述第一卡盘去除;以及清洗模块,包括:第二卡盘,喷嘴,配置为向所述第二卡盘喷射流体,和第二机械臂,具有清洗器件,所述第二机械臂配置为使所述清洗器件与所述第二卡盘上的衬底物理接触。
在上述工具中,所述分离模块和所述清洗模块是相同模块的部分,所述第一卡盘和所述第二卡盘是相同的卡盘。
在上述工具中,所述分离模块和所述清洗模块是不同的模块。
在上述工具中,还包括:传输工具,配置为在模块之间传输衬底。
在上述工具中,还包括:盖环,所述盖环配置为环绕所述第二卡盘上的衬底并且配置为覆盖所述第二卡盘的至少部分。
在上述工具中,所述喷嘴位于所述第二机械臂上。
在上述工具中,所述清洗模块包括配置为旋转所述第二卡盘的电机。
上面概述了若干实施例的特征,使得本领域技术人员可以更好地理解本发明的方面。本领域技术人员应该理解,他们可以容易地使用本发明作为基础来设计或修改用于实现与在此所介绍实施例相同的目的和/或实现相同优势的其他工艺和结构。本领域技术人员也应该意识到,这种等同构造并不背离本发明的精神和范围,并且在不背离本发明的精神和范围的情况下,在此他们可以做出多种变化、替换以及改变。
Claims (10)
1.一种方法,包括:
将第一衬底的表面从第二衬底分离;以及
在分离之后,清洗所述第一衬底的表面,所述清洗包括:使清洗机构与所述第一衬底的表面物理接触。
2.根据权利要求1所述的方法,其中,所述分离包括使位于所述第一衬底的表面上并且位于所述第一衬底和所述第二衬底之间的释放涂层分解,在所述分离之后,所述释放涂层的残留物保持在所述表面上,在清洗所述表面期间,所述清洗机构物理去除所述残留物。
3.根据权利要求1所述的方法,其中,在清洗所述表面期间,将所述第一衬底安装在卡盘上的胶带上,在清洗所述表面期间,盖环环绕所述第一衬底并且接触和覆盖所述胶带。
4.根据权利要求1所述的方法,其中,所述清洗机构包括海绵。
5.根据权利要求1所述的方法,其中,所述清洗机构包括刷子。
6.根据权利要求1所述的方法,其中,清洗所述第一衬底的表面包括向所述第一衬底的表面供给流体。
7.根据权利要求6所述的方法,其中,所述流体包括去离子水。
8.根据权利要求6所述的方法,其中,所述流体包括异丙醇。
9.一种方法,包括:
提供通过释放涂层接合至载体衬底的封装件衬底,所述释放涂层位于所述封装件衬底的表面上;
分解所述释放涂层和从所述封装件衬底分离所述载体衬底;以及
在从所述封装件衬底分离所述载体衬底之后,清洗所述封装件衬底的表面,所述清洗包括:向所述封装件衬底的表面供给流体和使所述封装件衬底的表面与清洗机构接触以从所述封装件衬底的表面物理去除所述释放涂层的残留物。
10.一种工具,包括:
分离模块,包括:
第一卡盘,
辐射源,配置为向所述第一卡盘发射辐射,和
第一机械臂,具有真空系统,所述真空系统配置为固定衬底和将所述衬底从所述第一卡盘去除;以及
清洗模块,包括:
第二卡盘,
喷嘴,配置为向所述第二卡盘喷射流体,和
第二机械臂,具有清洗器件,所述第二机械臂配置为使所述清洗器件与所述第二卡盘上的衬底物理接触。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106711068A (zh) * | 2017-01-17 | 2017-05-24 | 环旭电子股份有限公司 | 一种电子模组的刷洗装置及电子模组的自动刷洗方法 |
CN109786292A (zh) * | 2018-12-26 | 2019-05-21 | 华灿光电(浙江)有限公司 | 发光二极管芯片的清洗装置 |
CN116344434A (zh) * | 2023-05-11 | 2023-06-27 | 广东鸿浩半导体设备有限公司 | 一种激光解键合后的快速除尘和转移方法以及取片机械手 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9645328B2 (en) | 2014-10-29 | 2017-05-09 | Compass Electro Optical Systems Ltd. | No-polish optical element attachment for optical fiber ferrule |
US20160124163A1 (en) * | 2014-10-29 | 2016-05-05 | Compass Electro Optical Systems Ltd. | Vacuum gripper |
US9651744B2 (en) | 2014-10-29 | 2017-05-16 | Compass Electro Optical Systems Ltd. | Multi-fiber ferrule |
US9947570B2 (en) * | 2015-12-30 | 2018-04-17 | International Business Machines Corporation | Handler bonding and debonding for semiconductor dies |
TWI770110B (zh) * | 2017-03-30 | 2022-07-11 | 日商日本碍子股份有限公司 | 暫時固定基板及電子元件的暫時固定方法 |
US10522526B2 (en) * | 2017-07-28 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | LTHC as charging barrier in InFO package formation |
TWI628731B (zh) * | 2017-11-22 | 2018-07-01 | 孫建忠 | 晶圓框架取回與清潔之系統及方法 |
KR20210028910A (ko) | 2019-09-05 | 2021-03-15 | 삼성전자주식회사 | 자외선 조사 장치 및 이를 이용한 반도체 패키지의 제조 방법 |
WO2021102106A1 (en) | 2019-11-21 | 2021-05-27 | Corning Incorporated | Recycled glass and glass-ceramic carrier sustrates |
TWI729584B (zh) * | 2019-11-22 | 2021-06-01 | 佳宸科技有限公司 | 濕製程用清潔機構 |
US11688718B2 (en) * | 2021-09-07 | 2023-06-27 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of controlling warpage during LAB |
CN113829732B (zh) * | 2021-09-22 | 2023-08-18 | 南京爱沃客信息科技有限公司 | 抖动法辅助绿色建材硅藻泥颗粒渗入设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5518542A (en) * | 1993-11-05 | 1996-05-21 | Tokyo Electron Limited | Double-sided substrate cleaning apparatus |
US20090314438A1 (en) * | 2008-06-18 | 2009-12-24 | Tokyo Ohka Kogyo Co., Ltd. | Supporting plate peeling apparatus |
US20130133688A1 (en) * | 2011-11-29 | 2013-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer debonding and cleaning apparatus and method of use |
US20130255720A1 (en) * | 2012-04-03 | 2013-10-03 | Illinois Tool Works Inc. | Conical sponge brush for cleaning semiconductor wafers |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6543461B2 (en) * | 1999-02-11 | 2003-04-08 | Nova Measuring Instruments Ltd. | Buffer system for a wafer handling system field of the invention |
JP2001023954A (ja) | 1999-07-13 | 2001-01-26 | Canon Inc | 薄膜結晶デバイスの製造法 |
JP4565804B2 (ja) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
JP2004327561A (ja) * | 2003-04-22 | 2004-11-18 | Ebara Corp | 基板処理方法及び基板処理装置 |
SG148017A1 (en) * | 2003-07-11 | 2008-12-31 | Nitto Denko Corp | Transport method and transport apparatus for semiconductor wafer |
US8211242B2 (en) * | 2005-02-07 | 2012-07-03 | Ebara Corporation | Substrate processing method, substrate processing apparatus, and control program |
DE102006000687B4 (de) * | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers |
JP5014811B2 (ja) * | 2007-01-22 | 2012-08-29 | 東京エレクトロン株式会社 | 基板の処理方法 |
KR101008679B1 (ko) | 2008-11-26 | 2011-01-17 | 세메스 주식회사 | 기판 세정 방법 |
WO2010121068A2 (en) * | 2009-04-16 | 2010-10-21 | Suss Microtec, Inc. | Improved apparatus for temporary wafer bonding and debonding |
US8871609B2 (en) * | 2009-06-30 | 2014-10-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin wafer handling structure and method |
JP5412214B2 (ja) * | 2009-08-31 | 2014-02-12 | 日東電工株式会社 | 保護テープ剥離方法およびその装置 |
JP5123329B2 (ja) * | 2010-01-07 | 2013-01-23 | 株式会社岡本工作機械製作所 | 半導体基板の平坦化加工装置および平坦化加工方法 |
US9153462B2 (en) * | 2010-12-09 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spin chuck for thin wafer cleaning |
US20130084459A1 (en) * | 2011-09-30 | 2013-04-04 | 3M Innovative Properties Company | Low peel adhesive |
KR101435098B1 (ko) | 2011-11-14 | 2014-08-29 | 허만옥 | 디스플레이 장치의 리페어 방법 |
JP2013135181A (ja) | 2011-12-27 | 2013-07-08 | Panasonic Corp | フレキシブルデバイスの製造方法 |
US8834662B2 (en) * | 2012-03-22 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of separating wafer from carrier |
JP5886224B2 (ja) * | 2012-05-23 | 2016-03-16 | 株式会社荏原製作所 | 基板洗浄方法 |
EP3051574A4 (en) * | 2013-09-25 | 2017-05-10 | Shibaura Mechatronics Corporation | Substrate treatment device, method for separating bonded substrate, and method for removing adhseive |
-
2014
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5518542A (en) * | 1993-11-05 | 1996-05-21 | Tokyo Electron Limited | Double-sided substrate cleaning apparatus |
US20090314438A1 (en) * | 2008-06-18 | 2009-12-24 | Tokyo Ohka Kogyo Co., Ltd. | Supporting plate peeling apparatus |
US20130133688A1 (en) * | 2011-11-29 | 2013-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer debonding and cleaning apparatus and method of use |
US20130255720A1 (en) * | 2012-04-03 | 2013-10-03 | Illinois Tool Works Inc. | Conical sponge brush for cleaning semiconductor wafers |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106711068A (zh) * | 2017-01-17 | 2017-05-24 | 环旭电子股份有限公司 | 一种电子模组的刷洗装置及电子模组的自动刷洗方法 |
US10269590B2 (en) | 2017-01-17 | 2019-04-23 | Universal Scientific Industrial (Shanghai) Co., Ltd. | Scrubbing apparatus for electronic module |
CN109786292A (zh) * | 2018-12-26 | 2019-05-21 | 华灿光电(浙江)有限公司 | 发光二极管芯片的清洗装置 |
CN116344434A (zh) * | 2023-05-11 | 2023-06-27 | 广东鸿浩半导体设备有限公司 | 一种激光解键合后的快速除尘和转移方法以及取片机械手 |
CN116344434B (zh) * | 2023-05-11 | 2023-08-25 | 广东鸿浩半导体设备有限公司 | 一种激光解键合后的快速除尘和转移方法以及取片机械手 |
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US20160101613A1 (en) | 2016-04-14 |
DE102015105796B4 (de) | 2021-02-04 |
TWI601641B (zh) | 2017-10-11 |
CN105514037B (zh) | 2018-11-16 |
KR20160042370A (ko) | 2016-04-19 |
TW201625421A (zh) | 2016-07-16 |
US20170036433A1 (en) | 2017-02-09 |
US9895871B2 (en) | 2018-02-20 |
KR101634458B1 (ko) | 2016-06-28 |
US20170326866A1 (en) | 2017-11-16 |
DE102015105796A1 (de) | 2016-04-14 |
US9475272B2 (en) | 2016-10-25 |
US9662872B2 (en) | 2017-05-30 |
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