CN105489464B - 等离子体处理系统中的惰性主导脉冲 - Google Patents
等离子体处理系统中的惰性主导脉冲 Download PDFInfo
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- CN105489464B CN105489464B CN201510894141.7A CN201510894141A CN105489464B CN 105489464 B CN105489464 B CN 105489464B CN 201510894141 A CN201510894141 A CN 201510894141A CN 105489464 B CN105489464 B CN 105489464B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
- H05H2242/24—Radiofrequency or microwave generators
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161560005P | 2011-11-15 | 2011-11-15 | |
| US61/560,005 | 2011-11-15 | ||
| US13/550,547 US8808561B2 (en) | 2011-11-15 | 2012-07-16 | Inert-dominant pulsing in plasma processing systems |
| US13/550,547 | 2012-07-16 | ||
| CN201280056139.7A CN103987876B (zh) | 2011-11-15 | 2012-11-12 | 等离子体处理系统中的惰性主导脉冲 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280056139.7A Division CN103987876B (zh) | 2011-11-15 | 2012-11-12 | 等离子体处理系统中的惰性主导脉冲 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105489464A CN105489464A (zh) | 2016-04-13 |
| CN105489464B true CN105489464B (zh) | 2018-02-02 |
Family
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Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510894141.7A Active CN105489464B (zh) | 2011-11-15 | 2012-11-12 | 等离子体处理系统中的惰性主导脉冲 |
| CN201280056139.7A Active CN103987876B (zh) | 2011-11-15 | 2012-11-12 | 等离子体处理系统中的惰性主导脉冲 |
| CN201510894145.5A Pending CN105513933A (zh) | 2011-11-15 | 2012-11-12 | 等离子体处理系统中的惰性主导脉冲 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280056139.7A Active CN103987876B (zh) | 2011-11-15 | 2012-11-12 | 等离子体处理系统中的惰性主导脉冲 |
| CN201510894145.5A Pending CN105513933A (zh) | 2011-11-15 | 2012-11-12 | 等离子体处理系统中的惰性主导脉冲 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US8808561B2 (enExample) |
| JP (2) | JP6325448B2 (enExample) |
| KR (1) | KR102188927B1 (enExample) |
| CN (3) | CN105489464B (enExample) |
| SG (2) | SG10201608391VA (enExample) |
| TW (2) | TWI575552B (enExample) |
| WO (1) | WO2013072834A1 (enExample) |
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| US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
| US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
| US9362163B2 (en) | 2013-07-30 | 2016-06-07 | Lam Research Corporation | Methods and apparatuses for atomic layer cleaning of contacts and vias |
| US9275869B2 (en) | 2013-08-02 | 2016-03-01 | Lam Research Corporation | Fast-gas switching for etching |
| US9184029B2 (en) | 2013-09-03 | 2015-11-10 | Lam Research Corporation | System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor |
| US9318304B2 (en) | 2013-11-11 | 2016-04-19 | Applied Materials, Inc. | Frequency tuning for dual level radio frequency (RF) pulsing |
| US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
| US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
| JP6316735B2 (ja) * | 2014-12-04 | 2018-04-25 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US9576811B2 (en) | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US9806252B2 (en) | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
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| TWI808473B (zh) | 2015-06-05 | 2023-07-11 | 美商蘭姆研究公司 | GaN及其他Ⅲ-Ⅴ族材料之原子層蝕刻 |
| US9761459B2 (en) | 2015-08-05 | 2017-09-12 | Lam Research Corporation | Systems and methods for reverse pulsing |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
| US9788405B2 (en) | 2015-10-03 | 2017-10-10 | Applied Materials, Inc. | RF power delivery with approximated saw tooth wave pulsing |
| US9741539B2 (en) | 2015-10-05 | 2017-08-22 | Applied Materials, Inc. | RF power delivery regulation for processing substrates |
| US9754767B2 (en) | 2015-10-13 | 2017-09-05 | Applied Materials, Inc. | RF pulse reflection reduction for processing substrates |
| US10229837B2 (en) | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
| US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
| US9872373B1 (en) | 2016-10-25 | 2018-01-16 | Applied Materials, Inc. | Smart multi-level RF pulsing methods |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
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| US11651970B2 (en) | 2020-05-19 | 2023-05-16 | Tokyo Electron Limited | Systems and methods for selective ion mass segregation in pulsed plasma atomic layer etching |
| JP7382512B2 (ja) | 2020-07-07 | 2023-11-16 | ラム リサーチ コーポレーション | 照射フォトレジストパターニングのための統合乾式プロセス |
| CN115598943A (zh) | 2020-11-13 | 2023-01-13 | 朗姆研究公司（Us） | 用于干法去除光致抗蚀剂的处理工具 |
| JP7739434B2 (ja) | 2021-02-03 | 2025-09-16 | ラム リサーチ コーポレーション | 原子層エッチングにおけるエッチング選択性の制御 |
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- 2012-11-12 CN CN201510894145.5A patent/CN105513933A/zh active Pending
- 2012-11-12 WO PCT/IB2012/056348 patent/WO2013072834A1/en not_active Ceased
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| US20130119019A1 (en) | 2013-05-16 |
| US9583316B2 (en) | 2017-02-28 |
| CN105513933A (zh) | 2016-04-20 |
| KR102188927B1 (ko) | 2020-12-10 |
| US20140319098A1 (en) | 2014-10-30 |
| CN105489464A (zh) | 2016-04-13 |
| SG10201608391VA (en) | 2016-11-29 |
| CN103987876A (zh) | 2014-08-13 |
| WO2013072834A1 (en) | 2013-05-23 |
| US9214320B2 (en) | 2015-12-15 |
| KR20140096370A (ko) | 2014-08-05 |
| TW201331978A (zh) | 2013-08-01 |
| CN103987876B (zh) | 2016-01-06 |
| JP6676094B2 (ja) | 2020-04-08 |
| SG11201401749SA (en) | 2014-09-26 |
| US8808561B2 (en) | 2014-08-19 |
| TWI575552B (zh) | 2017-03-21 |
| TW201709258A (zh) | 2017-03-01 |
| JP2015503224A (ja) | 2015-01-29 |
| JP2018142711A (ja) | 2018-09-13 |
| TWI623017B (zh) | 2018-05-01 |
| JP6325448B2 (ja) | 2018-05-16 |
| US20160099133A1 (en) | 2016-04-07 |
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