CN105483823B - 一种太阳能多晶硅铸锭用氮化硅粉料及其制备方法 - Google Patents
一种太阳能多晶硅铸锭用氮化硅粉料及其制备方法 Download PDFInfo
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- CN105483823B CN105483823B CN201510887908.3A CN201510887908A CN105483823B CN 105483823 B CN105483823 B CN 105483823B CN 201510887908 A CN201510887908 A CN 201510887908A CN 105483823 B CN105483823 B CN 105483823B
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- silicon nitride
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
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- Crystallography & Structural Chemistry (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
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CN201510887908.3A CN105483823B (zh) | 2015-12-04 | 2015-12-04 | 一种太阳能多晶硅铸锭用氮化硅粉料及其制备方法 |
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CN201510887908.3A CN105483823B (zh) | 2015-12-04 | 2015-12-04 | 一种太阳能多晶硅铸锭用氮化硅粉料及其制备方法 |
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CN105483823A CN105483823A (zh) | 2016-04-13 |
CN105483823B true CN105483823B (zh) | 2018-04-10 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109627050B (zh) * | 2018-12-25 | 2021-07-06 | 宁波宝斯达坩埚保温制品有限公司 | 一种石英坩埚内表面涂层及其制备方法 |
CN109627047B (zh) * | 2018-12-25 | 2021-08-27 | 宁波宝斯达坩埚保温制品有限公司 | 一种氮化硅结合碳化硅复合钡涂层石英坩埚及其制备方法 |
CN110474034B (zh) * | 2019-08-22 | 2021-01-12 | 陕西科技大学 | 一种氮掺多孔纳米片硅碳复合材料及其制备方法和应用 |
CN115849917A (zh) * | 2022-11-25 | 2023-03-28 | 宁波银瓷新材料有限公司 | 一种高热导率氮化硅基板材料及其加工工艺 |
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CN1209281C (zh) * | 2002-01-22 | 2005-07-06 | 北京科技大学 | 自蔓延合成高α相超细氮化硅粉体及氮化硅晶须的方法 |
CN1173880C (zh) * | 2002-01-22 | 2004-11-03 | 清华大学 | 一种低压燃烧合成高α相氮化硅粉体的方法 |
CN1307089C (zh) * | 2004-03-25 | 2007-03-28 | 中国科学院理化技术研究所 | 控温活化自蔓延燃烧合成α相氮化硅粉体的方法 |
CN1264781C (zh) * | 2004-05-11 | 2006-07-19 | 中国科学院理化技术研究所 | 控温燃烧合成α相氮化硅粉体的方法 |
CN100453508C (zh) * | 2006-06-14 | 2009-01-21 | 中国科学院理化技术研究所 | 化学激励燃烧合成氮化硅/碳化硅复合粉体的方法 |
CN101269802B (zh) * | 2007-03-21 | 2010-08-11 | 中国科学院理化技术研究所 | 空气中燃烧合成Si3N4粉体及Si3N4/SiC复合粉体的方法 |
CN101214934A (zh) * | 2007-12-28 | 2008-07-09 | 中国兵器工业第五二研究所 | 自蔓燃无污染快速制备高α相氮化硅粉体的方法 |
CN101445223A (zh) * | 2008-12-19 | 2009-06-03 | 中国兵器工业第五二研究所 | 自蔓燃制备低氧含量高α-相氮化硅粉体的方法 |
CN101774809A (zh) * | 2010-03-05 | 2010-07-14 | 中国兵器工业第五二研究所 | 自蔓燃制备氮化硅复合碳化硅粉体的方法 |
CN102583276A (zh) * | 2011-12-30 | 2012-07-18 | 烟台同立高科工贸有限公司 | 一种生产规则形貌α相氮化硅粉体的方法 |
CN104291829B (zh) * | 2014-04-30 | 2015-11-25 | 浙江大学 | 一种高α相氮化硅的制备方法 |
CN104671795B (zh) * | 2015-02-05 | 2016-09-28 | 武汉科技大学 | 一种单相α-Si3N4超细粉体及其制备方法 |
CN104876196A (zh) * | 2015-05-08 | 2015-09-02 | 青岛桥海陶瓷新材料科技有限公司 | 燃烧合成法生产高纯β相氮化硅的制备方法 |
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