CN105453181B - 具有增强安全性的掩模编程式只读存储器 - Google Patents

具有增强安全性的掩模编程式只读存储器 Download PDF

Info

Publication number
CN105453181B
CN105453181B CN201480042490.XA CN201480042490A CN105453181B CN 105453181 B CN105453181 B CN 105453181B CN 201480042490 A CN201480042490 A CN 201480042490A CN 105453181 B CN105453181 B CN 105453181B
Authority
CN
China
Prior art keywords
transistor
coupled
bit line
memory cell
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201480042490.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN105453181A (zh
Inventor
S·S·尹
C·郑
E·特泽格鲁
S·M·米轮多夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN105453181A publication Critical patent/CN105453181A/zh
Application granted granted Critical
Publication of CN105453181B publication Critical patent/CN105453181B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

Landscapes

  • Read Only Memory (AREA)
CN201480042490.XA 2013-07-29 2014-07-24 具有增强安全性的掩模编程式只读存储器 Expired - Fee Related CN105453181B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/953,511 2013-07-29
US13/953,511 US9484110B2 (en) 2013-07-29 2013-07-29 Mask-programmed read only memory with enhanced security
PCT/US2014/048061 WO2015017253A2 (en) 2013-07-29 2014-07-24 Mask-programmed read only memory with enhanced security

Publications (2)

Publication Number Publication Date
CN105453181A CN105453181A (zh) 2016-03-30
CN105453181B true CN105453181B (zh) 2018-12-04

Family

ID=51300887

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480042490.XA Expired - Fee Related CN105453181B (zh) 2013-07-29 2014-07-24 具有增强安全性的掩模编程式只读存储器

Country Status (6)

Country Link
US (1) US9484110B2 (enExample)
EP (1) EP3028278B1 (enExample)
JP (1) JP6092483B2 (enExample)
KR (1) KR101720592B1 (enExample)
CN (1) CN105453181B (enExample)
WO (1) WO2015017253A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324430B2 (en) * 2014-04-30 2016-04-26 Globalfoundries Inc. Method for defining a default state of a charge trap based memory cell
US9378836B1 (en) * 2014-12-18 2016-06-28 International Business Machines Corporation Sensing circuit for a non-volatile memory cell having two complementary memory transistors
US9966131B2 (en) * 2015-08-21 2018-05-08 Synopsys, Inc. Using sense amplifier as a write booster in memory operating with a large dual rail voltage supply differential
KR102496506B1 (ko) 2016-10-14 2023-02-06 삼성전자주식회사 복수의 퓨즈 비트들을 독출하는 오티피 메모리 장치
US10586598B2 (en) * 2017-09-14 2020-03-10 Silicon Storage Technology, Inc. System and method for implementing inference engine by optimizing programming operation
US10490235B2 (en) * 2018-01-29 2019-11-26 Taiwan Semiconductor Manufacturing Co., Ltd. Differential read-only memory (ROM) device
US10636470B2 (en) * 2018-09-04 2020-04-28 Micron Technology, Inc. Source follower-based sensing scheme
CN110113016A (zh) * 2019-04-24 2019-08-09 华南理工大学 一种基于薄膜晶体管的自举结构放大器及芯片
US11437091B2 (en) * 2020-08-31 2022-09-06 Qualcomm Incorporated SRAM with robust charge-transfer sense amplification

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309389A (en) * 1993-08-27 1994-05-03 Honeywell Inc. Read-only memory with complementary data lines
US5412335A (en) * 1994-01-14 1995-05-02 Motorola, Inc. Area-efficient current-input filter, virtual ground circuit used in same, and method therefor
US6016277A (en) * 1997-06-27 2000-01-18 Cypress Semiconductor Corporation Reference voltage generator for reading a ROM cell in an integrated RAM/ROM memory device
US20080008019A1 (en) * 2006-07-06 2008-01-10 Texas Instruments Incorporated High Speed Read-Only Memory
US7626878B1 (en) * 2007-08-14 2009-12-01 Nvidia Corporation Active bit line charge keeper

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584969A (ja) 1981-06-30 1983-01-12 Fujitsu Ltd 半導体装置
US4599704A (en) * 1984-01-03 1986-07-08 Raytheon Company Read only memory circuit
JP2595266B2 (ja) * 1987-10-14 1997-04-02 株式会社日立製作所 Ｒｏｍ回路
US4888735A (en) * 1987-12-30 1989-12-19 Elite Semiconductor & Systems Int'l., Inc. ROM cell and array configuration
DE69333881T2 (de) 1992-07-31 2006-07-13 Hughes Electronics Corp., El Segundo Sicherheitssystem für eine integrierte Schaltung und Verfahren mit implantierten Verbindungen
JPH07105694A (ja) * 1993-10-07 1995-04-21 Matsushita Electron Corp マスクｒｏｍ素子およびそれを用いたマスクｒｏｍ
US5420818A (en) * 1994-01-03 1995-05-30 Texas Instruments Incorporated Static read only memory (ROM)
US5959467A (en) 1996-09-30 1999-09-28 Advanced Micro Devices, Inc. High speed dynamic differential logic circuit employing capacitance matching devices
US5973974A (en) * 1997-09-09 1999-10-26 Micro Technology, Inc. Regressive drive sense amplifier
US6324103B2 (en) 1998-11-11 2001-11-27 Hitachi, Ltd. Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device
JP3206591B2 (ja) * 1999-02-08 2001-09-10 日本電気株式会社 多値マスクｒｏｍおよび多値マスクｒｏｍの読み出し方法
US6473334B1 (en) * 2001-10-31 2002-10-29 Compaq Information Technologies Group, L.P. Multi-ported SRAM cell with shared bit and word lines and separate read and write ports
US20050117429A1 (en) 2003-04-28 2005-06-02 Chin-Hsi Lin Nonvolatile memory structure with high speed high bandwidth and low voltage
US7589990B2 (en) * 2004-12-03 2009-09-15 Taiwan Imagingtek Corporation Semiconductor ROM device and manufacturing method thereof
CN101197375A (zh) * 2007-12-28 2008-06-11 上海宏力半导体制造有限公司 一种掩膜只读存储器及其制造方法
JP2010211894A (ja) 2009-03-12 2010-09-24 Renesas Electronics Corp 差動センスアンプ
US7929328B2 (en) * 2009-06-12 2011-04-19 Vanguard International Semiconductor Corporation Memory and storage device utilizing the same
US8509018B2 (en) * 2010-08-12 2013-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Sense amplifier with adjustable back bias
US8605480B2 (en) * 2010-12-28 2013-12-10 Stmicroelectronics International N.V. Read only memory device with complemenary bit line pair
US8339884B2 (en) * 2011-01-14 2012-12-25 Taiwan Semiconductor Manufacturing Company, Inc. Low power and high speed sense amplifier
US8570784B2 (en) 2011-07-28 2013-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Differential ROM
JP5867091B2 (ja) * 2012-01-10 2016-02-24 株式会社ソシオネクスト 半導体記憶装置及びその書き込み方法
US8897054B2 (en) * 2013-02-18 2014-11-25 Intel Mobile Communications GmbH ROM device with keepers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309389A (en) * 1993-08-27 1994-05-03 Honeywell Inc. Read-only memory with complementary data lines
US5412335A (en) * 1994-01-14 1995-05-02 Motorola, Inc. Area-efficient current-input filter, virtual ground circuit used in same, and method therefor
US6016277A (en) * 1997-06-27 2000-01-18 Cypress Semiconductor Corporation Reference voltage generator for reading a ROM cell in an integrated RAM/ROM memory device
US20080008019A1 (en) * 2006-07-06 2008-01-10 Texas Instruments Incorporated High Speed Read-Only Memory
US7626878B1 (en) * 2007-08-14 2009-12-01 Nvidia Corporation Active bit line charge keeper

Also Published As

Publication number Publication date
US20150029778A1 (en) 2015-01-29
JP6092483B2 (ja) 2017-03-08
KR101720592B1 (ko) 2017-03-29
US9484110B2 (en) 2016-11-01
JP2016528660A (ja) 2016-09-15
EP3028278A2 (en) 2016-06-08
EP3028278B1 (en) 2019-10-30
WO2015017253A3 (en) 2015-08-13
WO2015017253A2 (en) 2015-02-05
CN105453181A (zh) 2016-03-30
KR20160039220A (ko) 2016-04-08

Similar Documents

Publication Publication Date Title
CN105453181B (zh) 具有增强安全性的掩模编程式只读存储器
US9436845B2 (en) Physically unclonable fuse using a NOR type memory array
JP4420823B2 (ja) 感知動作が改善された不揮発性メモリおよび方法
US6987682B2 (en) Matchline sense circuit and method
EP3690884B1 (en) Sram based physically unclonable function and method for generating a puf response
KR102034332B1 (ko) 감소된 레이아웃 면적 및 파워 소비를 가진 비휘발성 메모리를 위한 콤팩트한 고속 감지 증폭기
US7449922B1 (en) Sensing circuitry and method of detecting a change in voltage on at least one input line
US9136006B2 (en) Method and device for reducing coupling noise during read operation
KR102681806B1 (ko) 반도체 메모리 장치 및 그것의 동작 방법
US6831853B2 (en) Apparatus for cleaning a substrate
KR20150028785A (ko) 혼성 록아웃을 가진 비휘발성 메모리를 위한 콤팩트한 고속 감지 증폭기
US20060120174A1 (en) Memory array with low power bit line precharge
KR100564569B1 (ko) 셀 누설 전류에 강한 프리차지 제어 회로를 갖는 메모리장치 및 비트라인 프리차아지 방법
US9324430B2 (en) Method for defining a default state of a charge trap based memory cell
US20120243354A1 (en) Repairing Soft Failures in Memory Cells in SRAM Arrays
CN106504792B (zh) 存储器电路及其操作方法
US6831866B1 (en) Method and apparatus for read bitline clamping for gain cell DRAM devices
US20060268615A1 (en) Nonvolatile semiconductor static random access memory device
US20090201724A1 (en) Memory device and method thereof
CN112585678B (zh) 用于存储器应用的开关源极线
Yang et al. Low-voltage embedded NAND-ROM macros using data-aware sensing reference scheme for VDDmin, speed and power improvement
US8576631B2 (en) Techniques for sensing a semiconductor memory device
JP3892790B2 (ja) 半導体不揮発性メモリ
JP5212375B2 (ja) 半導体記憶装置及びデータ判別方法
JP2007149186A (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20181204

Termination date: 20210724