CN1054470C - 发光二极管及其制造方法 - Google Patents

发光二极管及其制造方法 Download PDF

Info

Publication number
CN1054470C
CN1054470C CN94107697A CN94107697A CN1054470C CN 1054470 C CN1054470 C CN 1054470C CN 94107697 A CN94107697 A CN 94107697A CN 94107697 A CN94107697 A CN 94107697A CN 1054470 C CN1054470 C CN 1054470C
Authority
CN
China
Prior art keywords
light
layer
emitting diode
substrate
epitaxial loayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN94107697A
Other languages
English (en)
Chinese (zh)
Other versions
CN1103512A (zh
Inventor
海野恒弘
今野泰一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Publication of CN1103512A publication Critical patent/CN1103512A/zh
Application granted granted Critical
Publication of CN1054470C publication Critical patent/CN1054470C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses

Landscapes

  • Led Devices (AREA)
CN94107697A 1993-06-30 1994-06-30 发光二极管及其制造方法 Expired - Fee Related CN1054470C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP16061093 1993-06-30
JP160610/1993 1993-06-30
JP160610/93 1993-06-30
JP287987/93 1993-11-17
JP28798793 1993-11-17
JP287987/1993 1993-11-17

Publications (2)

Publication Number Publication Date
CN1103512A CN1103512A (zh) 1995-06-07
CN1054470C true CN1054470C (zh) 2000-07-12

Family

ID=26487062

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94107697A Expired - Fee Related CN1054470C (zh) 1993-06-30 1994-06-30 发光二极管及其制造方法

Country Status (4)

Country Link
US (1) US5491350A (cg-RX-API-DMAC7.html)
KR (1) KR100323997B1 (cg-RX-API-DMAC7.html)
CN (1) CN1054470C (cg-RX-API-DMAC7.html)
TW (1) TW253999B (cg-RX-API-DMAC7.html)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6590502B1 (en) * 1992-10-12 2003-07-08 911Ep, Inc. Led warning signal light and movable support
US6043509A (en) * 1996-12-13 2000-03-28 Hitachi Cable, Ltd. Light-emitting diode having moisture-proof characteristics and high output power
GB2330679B (en) * 1997-10-21 2002-04-24 911 Emergency Products Inc Warning signal light
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
US6614359B2 (en) * 1999-04-06 2003-09-02 911 Emergency Products, Inc. Replacement led lamp assembly and modulated power intensity for light source
US6380865B1 (en) 1999-04-06 2002-04-30 911 Emergency Products, Inc. Replacement led lamp assembly and modulated power intensity for light source
US6462669B1 (en) 1999-04-06 2002-10-08 E. P . Survivors Llc Replaceable LED modules
WO2000074974A1 (en) 1999-06-08 2000-12-14 911 Emergency Products, Inc. Reflector/cullminator
US6700502B1 (en) * 1999-06-08 2004-03-02 911Ep, Inc. Strip LED light assembly for motor vehicle
US6705745B1 (en) * 1999-06-08 2004-03-16 911Ep, Inc. Rotational led reflector
US6367949B1 (en) 1999-08-04 2002-04-09 911 Emergency Products, Inc. Par 36 LED utility lamp
US20050047167A1 (en) * 1999-08-04 2005-03-03 Pederson John C. Warning signal light bar
US20050057941A1 (en) * 1999-08-04 2005-03-17 911Ep, Inc. 360 Degree pod warning light signal
US6547410B1 (en) 2000-07-28 2003-04-15 911 Emergency Products, Inc. LED alley/take-down light
EP1234344B1 (en) 1999-12-03 2020-12-02 Cree, Inc. Enhanced light extraction in leds through the use of internal and external optical elements
US6590343B2 (en) 2000-06-06 2003-07-08 911Ep, Inc. LED compensation circuit
DE10032531A1 (de) * 2000-07-05 2002-01-24 Osram Opto Semiconductors Gmbh Lumineszenzdiode
US7547921B2 (en) * 2000-08-08 2009-06-16 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US6879263B2 (en) * 2000-11-15 2005-04-12 Federal Law Enforcement, Inc. LED warning light and communication system
US8188878B2 (en) 2000-11-15 2012-05-29 Federal Law Enforcement Development Services, Inc. LED light communication system
US7439847B2 (en) 2002-08-23 2008-10-21 John C. Pederson Intelligent observation and identification database system
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US6903379B2 (en) * 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
JP4080843B2 (ja) * 2002-10-30 2008-04-23 株式会社東芝 不揮発性半導体記憶装置
US7071494B2 (en) * 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
US7274043B2 (en) * 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7211831B2 (en) * 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US20040259279A1 (en) * 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US7521854B2 (en) * 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7105861B2 (en) * 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7667238B2 (en) * 2003-04-15 2010-02-23 Luminus Devices, Inc. Light emitting devices for liquid crystal displays
US7083993B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7074631B2 (en) * 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US7084434B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Uniform color phosphor-coated light-emitting diode
KR101183776B1 (ko) * 2003-08-19 2012-09-17 니치아 카가쿠 고교 가부시키가이샤 반도체 소자
US7344903B2 (en) * 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US7341880B2 (en) * 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
US7450311B2 (en) 2003-12-12 2008-11-11 Luminus Devices, Inc. Optical display systems and methods
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
EP1759422B1 (en) 2004-06-04 2022-01-26 The Board Of Trustees Of The University Of Illinois Electrical device comprising printable semiconductor elements
US20090023239A1 (en) * 2004-07-22 2009-01-22 Luminus Devices, Inc. Light emitting device processes
US20060038188A1 (en) 2004-08-20 2006-02-23 Erchak Alexei A Light emitting diode systems
JP4250576B2 (ja) * 2004-08-24 2009-04-08 株式会社東芝 半導体発光素子
KR100590775B1 (ko) * 2004-12-08 2006-06-19 한국전자통신연구원 실리콘 발광 소자
EP1820222A1 (en) * 2004-12-08 2007-08-22 Electronics and Telecommunications Research Institute Silicon-based light emitting diode
JP4273237B2 (ja) * 2005-01-05 2009-06-03 Ｄｏｗａホールディングス株式会社 赤外発光ダイオード及びその製造方法
FI118196B (fi) * 2005-07-01 2007-08-15 Optogan Oy Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä
US7692207B2 (en) * 2005-01-21 2010-04-06 Luminus Devices, Inc. Packaging designs for LEDs
US7170100B2 (en) 2005-01-21 2007-01-30 Luminus Devices, Inc. Packaging designs for LEDs
US20070045640A1 (en) 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
US20080099777A1 (en) * 2005-10-19 2008-05-01 Luminus Devices, Inc. Light-emitting devices and related systems
JP2008091179A (ja) * 2006-09-29 2008-04-17 Yamaha Motor Co Ltd ヘッドライト装置及び車両
US8110838B2 (en) * 2006-12-08 2012-02-07 Luminus Devices, Inc. Spatial localization of light-generating portions in LEDs
US8053789B2 (en) 2006-12-28 2011-11-08 Seoul Opto Device Co., Ltd. Light emitting device and fabrication method thereof
US8110425B2 (en) 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
US7781779B2 (en) * 2007-05-08 2010-08-24 Luminus Devices, Inc. Light emitting devices including wavelength converting material
US9455783B2 (en) 2013-05-06 2016-09-27 Federal Law Enforcement Development Services, Inc. Network security and variable pulse wave form with continuous communication
US9100124B2 (en) 2007-05-24 2015-08-04 Federal Law Enforcement Development Services, Inc. LED Light Fixture
US9258864B2 (en) 2007-05-24 2016-02-09 Federal Law Enforcement Development Services, Inc. LED light control and management system
US9294198B2 (en) 2007-05-24 2016-03-22 Federal Law Enforcement Development Services, Inc. Pulsed light communication key
US9414458B2 (en) 2007-05-24 2016-08-09 Federal Law Enforcement Development Services, Inc. LED light control assembly and system
US11265082B2 (en) 2007-05-24 2022-03-01 Federal Law Enforcement Development Services, Inc. LED light control assembly and system
WO2008148050A1 (en) 2007-05-24 2008-12-04 Federal Law Enforcement Development Services, Inc. Led light interior room and building communication system
TW200929593A (en) * 2007-12-20 2009-07-01 Nat Univ Tsing Hua Light source with reflective pattern structure
RU2381604C1 (ru) * 2008-07-08 2010-02-10 Общество с ограниченной ответственностью ООО "Юник Ай Сиз" СПОСОБ ИЗГОТОВЛЕНИЯ ТОНКОПЛЕНОЧНОГО ПОЛУПРОВОДНИКОВОГО ЛАЗЕРА НА ОСНОВЕ ТОНКОЙ МНОГОПРОХОДНОЙ ИЗЛУЧАЮЩЕЙ p-n-ГЕТЕРОСТРУКТУРЫ
KR101009651B1 (ko) * 2008-10-15 2011-01-19 박은현 3족 질화물 반도체 발광소자
KR100992728B1 (ko) * 2008-10-20 2010-11-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US8890773B1 (en) 2009-04-01 2014-11-18 Federal Law Enforcement Development Services, Inc. Visible light transceiver glasses
KR101154596B1 (ko) * 2009-05-21 2012-06-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
EP2315269A1 (en) * 2009-10-23 2011-04-27 Nxp B.V. Light emitting diode
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR20120040448A (ko) * 2010-10-19 2012-04-27 삼성엘이디 주식회사 수직형 발광 소자
US8543505B2 (en) 2011-01-14 2013-09-24 Federal Law Enforcement Development Services, Inc. Method of providing lumens and tracking of lumen consumption
WO2014160096A1 (en) 2013-03-13 2014-10-02 Federal Law Enforcement Development Services, Inc. Led light control and management system
CN104620398B (zh) * 2013-09-03 2017-05-03 夏普株式会社 半导体发光元件
US20150198941A1 (en) 2014-01-15 2015-07-16 John C. Pederson Cyber Life Electronic Networking and Commerce Operating Exchange
US20170048953A1 (en) 2015-08-11 2017-02-16 Federal Law Enforcement Development Services, Inc. Programmable switch and system
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
CN112002787B (zh) * 2020-10-30 2021-03-02 南昌凯捷半导体科技有限公司 一种具有粗糙表面的红外led外延片制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62173773A (ja) * 1986-01-27 1987-07-30 Sharp Corp 発光ダイオ−ド
JPH05327014A (ja) * 1992-05-19 1993-12-10 Hitachi Cable Ltd 発光ダイオードの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932073B2 (ja) * 1979-06-01 1984-08-06 三菱電機株式会社 発光ダイオ−ドおよびその製造方法
JPH0760905B2 (ja) * 1989-09-22 1995-06-28 日立電線株式会社 発光ダイオード
JPH0770757B2 (ja) * 1989-10-17 1995-07-31 株式会社東芝 半導体発光素子
JP2720609B2 (ja) * 1991-03-08 1998-03-04 日立電線株式会社 発光ダイオード

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62173773A (ja) * 1986-01-27 1987-07-30 Sharp Corp 発光ダイオ−ド
JPH05327014A (ja) * 1992-05-19 1993-12-10 Hitachi Cable Ltd 発光ダイオードの製造方法

Also Published As

Publication number Publication date
KR950002088A (ko) 1995-01-04
KR100323997B1 (ko) 2002-06-20
TW253999B (cg-RX-API-DMAC7.html) 1995-08-11
US5491350A (en) 1996-02-13
CN1103512A (zh) 1995-06-07

Similar Documents

Publication Publication Date Title
CN1054470C (zh) 发光二极管及其制造方法
US7038245B2 (en) Semiconductor light emitting device having angled side surface
CN1201412C (zh) 半导体发光元件
CN102124574B (zh) 半导体发光元件、其电极及制造方法以及灯
JP3724620B2 (ja) 発光ダイオードの製造方法
KR100735496B1 (ko) 수직구조 질화갈륨계 ｌｅｄ 소자의 제조방법
US8022436B2 (en) Light emitting diode, production method thereof and lamp
CN1741294A (zh) 半导体发光器件和制造半导体发光器件的方法
CN102822999B (zh) 发光二极管及其制造方法以及发光二极管灯
CN102569537B (zh) 一种垂直结构发光二极管芯片的制造方法
CN1054704C (zh) 发光二极管阵列及其制造方法
CN1248322C (zh) 半导体发光器件
CN1242497C (zh) 半导体发光芯片及半导体发光器件
CN1523682A (zh) 半导体发光元件
JP5075786B2 (ja) 発光装置及びその製造方法
JPH06326360A (ja) 半導体発光素子及びその製造方法
EP1403933B1 (en) Semiconductor light emitting diode
KR20130027302A (ko) 발광소자
KR102474695B1 (ko) 발광소자
JP2003249682A (ja) 半導体発光装置
CN1774820A (zh) 发光二极管及其制造方法
CN1290967A (zh) 发光二极管及其制作方法
CN1501521A (zh) 制造氮化镓半导体发光器件的方法
CN1773736A (zh) 覆晶式的发光二极管及其制作方法
JPH08116088A (ja) 発光ダイオードの製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee