CN105393350B - 功率半导体模块 - Google Patents
功率半导体模块 Download PDFInfo
- Publication number
- CN105393350B CN105393350B CN201480023763.6A CN201480023763A CN105393350B CN 105393350 B CN105393350 B CN 105393350B CN 201480023763 A CN201480023763 A CN 201480023763A CN 105393350 B CN105393350 B CN 105393350B
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- Prior art keywords
- module
- sensor
- sensing system
- power semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000000126 substance Substances 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims description 11
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- 230000004913 activation Effects 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 3
- 230000005619 thermoelectricity Effects 0.000 claims description 2
- 230000008901 benefit Effects 0.000 description 11
- 238000001465 metallisation Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
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- 230000006978 adaptation Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000017 hydrogel Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
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- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
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- 238000004146 energy storage Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Testing Or Calibration Of Command Recording Devices (AREA)
- Chemical & Material Sciences (AREA)
- Arrangements For Transmission Of Measured Signals (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13165536.7 | 2013-04-26 | ||
EP13165536 | 2013-04-26 | ||
PCT/EP2014/051811 WO2014173550A1 (en) | 2013-04-26 | 2014-01-30 | Power semiconductor module |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105393350A CN105393350A (zh) | 2016-03-09 |
CN105393350B true CN105393350B (zh) | 2018-10-16 |
Family
ID=48143564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480023763.6A Active CN105393350B (zh) | 2013-04-26 | 2014-01-30 | 功率半导体模块 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9559024B2 (zh) |
EP (1) | EP2989658B1 (zh) |
JP (1) | JP6305519B2 (zh) |
KR (1) | KR102162186B1 (zh) |
CN (1) | CN105393350B (zh) |
WO (1) | WO2014173550A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6413080B2 (ja) * | 2014-12-09 | 2018-10-31 | パナソニックIpマネジメント株式会社 | センサ付き送信装置と、これを用いた監視システム |
DE202018103319U1 (de) * | 2018-06-13 | 2019-09-16 | Wago Verwaltungsgesellschaft Mbh | Sensoreinrichtung für eine Reihenklemmenanordnung, Reihenklemmenanordnung, Reihenklemme, Schaltschrank sowie Ausleseeinrichtung |
JP7322654B2 (ja) * | 2019-10-15 | 2023-08-08 | 富士電機株式会社 | 半導体モジュール |
EP3879556A1 (en) * | 2020-03-11 | 2021-09-15 | ABB Schweiz AG | Power component including a main component and a sensor and emitter unit and system with the power component |
CN114006349A (zh) * | 2021-10-29 | 2022-02-01 | 广东汇芯半导体有限公司 | 半导体电路和电控装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003179230A (ja) | 2001-12-12 | 2003-06-27 | Yaskawa Electric Corp | 絶縁ゲートバイポーラトランジスタ |
JP2004087871A (ja) | 2002-08-28 | 2004-03-18 | Fuji Electric Holdings Co Ltd | 半導体スイッチ素子の温度検出装置 |
US20040150529A1 (en) * | 2003-01-30 | 2004-08-05 | Benoit Jeffrey T. | Power harvesting sensor for monitoring and control |
DE10309302B4 (de) | 2003-03-04 | 2007-09-27 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Sensorbauteil |
CN101271871B (zh) | 2003-08-22 | 2011-05-25 | 关西电力株式会社 | 半导体装置及制造方法、使用该半导体装置的电力变换装置 |
JP4479453B2 (ja) * | 2004-10-01 | 2010-06-09 | 三菱電機株式会社 | 電力半導体装置 |
JP2008061375A (ja) * | 2006-08-31 | 2008-03-13 | Daikin Ind Ltd | 電力変換装置 |
EP1916884B1 (en) | 2006-10-27 | 2011-04-06 | Agie Charmilles SA | Circuit board unit and method for production thereof |
DE102007052630B4 (de) | 2007-11-05 | 2019-08-14 | Infineon Technologies Ag | Leistungshalbleitermodul mit Temperatursensor |
US8552283B2 (en) | 2010-01-11 | 2013-10-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Thermoelectric application for waste heat recovery from semiconductor devices in power electronics systems |
CN201708690U (zh) | 2010-05-07 | 2011-01-12 | 北京乐普四方方圆科技股份有限公司 | 一种igbt直接串联保护装置 |
US8730681B2 (en) * | 2011-09-23 | 2014-05-20 | Infineon Technologies Ag | Power semiconductor module with wireless saw temperature sensor |
JP2013077222A (ja) | 2011-09-30 | 2013-04-25 | Ricoh Co Ltd | 情報処理装置、印刷原稿作成方法及び印刷原稿作成プログラム |
-
2014
- 2014-01-30 WO PCT/EP2014/051811 patent/WO2014173550A1/en active Application Filing
- 2014-01-30 JP JP2016509329A patent/JP6305519B2/ja active Active
- 2014-01-30 EP EP14701775.0A patent/EP2989658B1/en active Active
- 2014-01-30 CN CN201480023763.6A patent/CN105393350B/zh active Active
- 2014-01-30 KR KR1020157030566A patent/KR102162186B1/ko active IP Right Grant
-
2015
- 2015-10-23 US US14/921,587 patent/US9559024B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2989658A1 (en) | 2016-03-02 |
CN105393350A (zh) | 2016-03-09 |
US20160043009A1 (en) | 2016-02-11 |
WO2014173550A1 (en) | 2014-10-30 |
EP2989658B1 (en) | 2016-11-23 |
KR102162186B1 (ko) | 2020-10-07 |
JP6305519B2 (ja) | 2018-04-04 |
KR20160003671A (ko) | 2016-01-11 |
US9559024B2 (en) | 2017-01-31 |
JP2016522987A (ja) | 2016-08-04 |
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