JP6305519B2 - パワー半導体モジュール - Google Patents
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- JP6305519B2 JP6305519B2 JP2016509329A JP2016509329A JP6305519B2 JP 6305519 B2 JP6305519 B2 JP 6305519B2 JP 2016509329 A JP2016509329 A JP 2016509329A JP 2016509329 A JP2016509329 A JP 2016509329A JP 6305519 B2 JP6305519 B2 JP 6305519B2
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- 239000004065 semiconductor Substances 0.000 title claims description 84
- 239000000758 substrate Substances 0.000 claims description 32
- 239000000126 substance Substances 0.000 claims description 8
- 230000004913 activation Effects 0.000 claims description 4
- 230000008901 benefit Effects 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 10
- 238000005259 measurement Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000002775 capsule Substances 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 238000003306 harvesting Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012372 quality testing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L2924/1304—Transistor
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- H01L2924/1304—Transistor
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Description
本発明は、非常に安全かつ確実な性能を提供する能力を備えたパワー半導体モジュールに関する。特に、本発明は、自立的に設計されたセンサシステムを含むパワー半導体モジュールに関する。
さまざまなパワー半導体モジュールが公知であって、多くのさまざまな電子機器において用いられている。これらのパワー電子モジュールの要件は、適切な信頼性および保全性を提供することである。
したがって、本発明の目的は、信頼性、保全性の改善が可能である、および/または容易に製造できる、パワー半導体モジュールを提供することである。
上述の説明は、センサシステムが完全に自律型であり、このため、モジュール外部にある装置に至るワイヤまたはプラグを含む如何なる電気接続をも必要としないことを明確に示している。さらに、適切に機能させるためにモジュールの回路にセンサシステムを組込む必要はない。したがって、本発明に従ったパワー半導体モジュールは、モジュール自体、このようなモジュールを含むモジュール構成、およびこのようなパワー半導体モジュールを備えた電子装置についての信頼性および耐久性の改善を可能にする。これにより、これまでに採用されてこなかったいくつかの方策を組み合わせることによって、パワー半導体モジュールに完全に自律型のセンサシステムを備えること、および上述の利点を提供する発明の効果を実現することが発明者の利点となる。
発明の主題についての付加的な特徴、特質および利点は、サブクレーム、図、ならびにそれぞれの図および例についての以下の説明において開示される。以下の説明においては、本発明に従った半導体モジュールの一実施形態および例を例示的に示す。
図1には、パワーモジュール10の構成が概略的に示される。上記パワーモジュール10の内部構造を詳細に説明する。パワーモジュール10は、少なくとも1つのパワー半導体デバイス14が配置されているプラスチックケースなどのハウジング12を含む。半導体デバイス14は、例示的な態様では、絶縁ゲートバイポーラトランジスタ(IGBT)、ダイオード、金属酸化膜半導体電界効果トランジスタ(MOSFET)などであってもよい。図1に従うと、ダイオードおよびIGBTが設けられている。半導体デバイス14または複数の半導体デバイス14は、たとえばバスバーへの接続としての端子16などの接点を介して、好ましくはゲート端子18を介して、接続可能である。この場合、半導体デバイス14は、好ましくはアルミニウム接着ワイヤ20によって接着される。
Claims (10)
- パワー半導体モジュールであって、ハウジング(12)と、前記ハウジング(12)内部に配置された基板(24)とを含み、前記基板(24)の上に、少なくとも1つの導電路(15)が配置され、前記パワー半導体モジュールはさらに、少なくとも1つのパワー半導体デバイス(14)を含み、前記少なくとも1つのパワー半導体デバイス(14)は、ハウジング(12)の内部に配置され、前記導電路(15)上に配置されて電気的に接続され、前記パワー半導体モジュールはさらに、前記半導体デバイス(14)に外部から接触するための少なくとも1つの接点を含み、前記モジュール(10)はさらに、ハウジング(12)の内部に配置された自立型センサシステムを含み、前記センサシステムは、物理的パラメータおよび/または化学物質を検出するためのセンサと、センサによって提供されるデータをモジュール外部の受信者に無線送信するための送信装置と、必要なすべてのエネルギをセンサシステムに供給するためのエネルギ源とを含み、
センサは、電流を検出するための少なくとも1つのセンサ、電圧磁界を検出するための少なくとも1つのセンサ、機械的応力を検出するための少なくとも1つのセンサ、および湿度を検出するための少なくとも1つのセンサを含む、パワー半導体モジュール。 - 少なくとも1つのセンサは電気接点なしで測定するように設計される、請求項1に記載のモジュール。
- センサシステムには、モジュール(10)の通電部分への電気接点がない、請求項1に記載のモジュール。
- センサはさらに、温度を検出するための少なくとも1つのセンサを含む、請求項1から3のいずれかに記載のモジュール。
- モジュールは電源を含み、電源は、熱電デバイス(44)、圧電デバイス、焦電デバイスおよび高周波起動デバイスのうち少なくとも1つを含む、請求項1から4のいずれかに記載のモジュール。
- 熱電デバイス(44)は、モジュール(10)の主温度経路の傍らに配置される、請求項5に記載のモジュール。
- センサシステムはさらに、データ要求を受信するための受信ユニットを含み、前記受信ユニットは、センサおよび送信ユニットのうち少なくとも1つに接続される、請求項1から6のいずれかに記載のモジュール。
- 請求項1から7のいずれかに記載の少なくとも1つのパワー半導体モジュール(10)を含む、モジュール構成。
- 前記構成は、少なくとも1つのセンサによって提供されるデータに基づいて少なくとも1つのパワー半導体モジュール(10)を制御するように適合された制御ユニットを含む、請求項8に記載のモジュール構成。
- 請求項1から9のいずれかに記載のモジュール(10)またはモジュール構成を含む電気装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP13165536.7 | 2013-04-26 | ||
EP13165536 | 2013-04-26 | ||
PCT/EP2014/051811 WO2014173550A1 (en) | 2013-04-26 | 2014-01-30 | Power semiconductor module |
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JP2016522987A JP2016522987A (ja) | 2016-08-04 |
JP6305519B2 true JP6305519B2 (ja) | 2018-04-04 |
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US (1) | US9559024B2 (ja) |
EP (1) | EP2989658B1 (ja) |
JP (1) | JP6305519B2 (ja) |
KR (1) | KR102162186B1 (ja) |
CN (1) | CN105393350B (ja) |
WO (1) | WO2014173550A1 (ja) |
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JP6413080B2 (ja) * | 2014-12-09 | 2018-10-31 | パナソニックIpマネジメント株式会社 | センサ付き送信装置と、これを用いた監視システム |
DE202018103319U1 (de) * | 2018-06-13 | 2019-09-16 | Wago Verwaltungsgesellschaft Mbh | Sensoreinrichtung für eine Reihenklemmenanordnung, Reihenklemmenanordnung, Reihenklemme, Schaltschrank sowie Ausleseeinrichtung |
JP7322654B2 (ja) * | 2019-10-15 | 2023-08-08 | 富士電機株式会社 | 半導体モジュール |
EP3879556A1 (en) * | 2020-03-11 | 2021-09-15 | ABB Schweiz AG | Power component including a main component and a sensor and emitter unit and system with the power component |
CN114006349A (zh) * | 2021-10-29 | 2022-02-01 | 广东汇芯半导体有限公司 | 半导体电路和电控装置 |
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JP2003179230A (ja) | 2001-12-12 | 2003-06-27 | Yaskawa Electric Corp | 絶縁ゲートバイポーラトランジスタ |
JP2004087871A (ja) | 2002-08-28 | 2004-03-18 | Fuji Electric Holdings Co Ltd | 半導体スイッチ素子の温度検出装置 |
US20040150529A1 (en) * | 2003-01-30 | 2004-08-05 | Benoit Jeffrey T. | Power harvesting sensor for monitoring and control |
DE10309302B4 (de) * | 2003-03-04 | 2007-09-27 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Sensorbauteil |
CN100416803C (zh) * | 2003-08-22 | 2008-09-03 | 关西电力株式会社 | 半导体装置及制造方法、使用该半导体装置的电力变换装置 |
JP4479453B2 (ja) | 2004-10-01 | 2010-06-09 | 三菱電機株式会社 | 電力半導体装置 |
JP2008061375A (ja) * | 2006-08-31 | 2008-03-13 | Daikin Ind Ltd | 電力変換装置 |
EP1916884B1 (en) * | 2006-10-27 | 2011-04-06 | Agie Charmilles SA | Circuit board unit and method for production thereof |
DE102007052630B4 (de) * | 2007-11-05 | 2019-08-14 | Infineon Technologies Ag | Leistungshalbleitermodul mit Temperatursensor |
US8552283B2 (en) | 2010-01-11 | 2013-10-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Thermoelectric application for waste heat recovery from semiconductor devices in power electronics systems |
CN201708690U (zh) | 2010-05-07 | 2011-01-12 | 北京乐普四方方圆科技股份有限公司 | 一种igbt直接串联保护装置 |
US8730681B2 (en) | 2011-09-23 | 2014-05-20 | Infineon Technologies Ag | Power semiconductor module with wireless saw temperature sensor |
JP2013077222A (ja) * | 2011-09-30 | 2013-04-25 | Ricoh Co Ltd | 情報処理装置、印刷原稿作成方法及び印刷原稿作成プログラム |
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- 2014-01-30 WO PCT/EP2014/051811 patent/WO2014173550A1/en active Application Filing
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