CN105392915A - 用于涂覆基板表面的方法和设备 - Google Patents
用于涂覆基板表面的方法和设备 Download PDFInfo
- Publication number
- CN105392915A CN105392915A CN201480037183.2A CN201480037183A CN105392915A CN 105392915 A CN105392915 A CN 105392915A CN 201480037183 A CN201480037183 A CN 201480037183A CN 105392915 A CN105392915 A CN 105392915A
- Authority
- CN
- China
- Prior art keywords
- precursor
- nozzle
- substrate
- precursor nozzle
- relative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20135707 | 2013-06-27 | ||
FI20135707A FI126043B (en) | 2013-06-27 | 2013-06-27 | Method and device for coating a surface of a substrate |
PCT/FI2014/050527 WO2014207316A1 (en) | 2013-06-27 | 2014-06-26 | Method and apparatus for coating a surface of a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105392915A true CN105392915A (zh) | 2016-03-09 |
CN105392915B CN105392915B (zh) | 2018-11-13 |
Family
ID=52141153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480037183.2A Active CN105392915B (zh) | 2013-06-27 | 2014-06-26 | 用于涂覆基板表面的方法和设备 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9708710B2 (zh) |
JP (1) | JP6681829B2 (zh) |
CN (1) | CN105392915B (zh) |
DE (1) | DE112014003000T5 (zh) |
FI (1) | FI126043B (zh) |
WO (1) | WO2014207316A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106048561A (zh) * | 2016-08-17 | 2016-10-26 | 武汉华星光电技术有限公司 | 一种原子层沉积装置及方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI125341B (en) * | 2012-07-09 | 2015-08-31 | Beneq Oy | Apparatus and method for treating substrate |
FI126315B (en) * | 2014-07-07 | 2016-09-30 | Beneq Oy | A nozzle head, apparatus and method for subjecting a substrate surface to successive surface reactions |
CN108291303B (zh) * | 2015-12-17 | 2020-07-21 | 倍耐克有限公司 | 涂覆前体喷嘴和喷嘴头 |
FR3046800A1 (fr) * | 2016-01-18 | 2017-07-21 | Enhelios Nanotech | Procede et dispositif de depot chimique en phase gazeuse a flux alternes. |
FI128453B (en) * | 2017-10-18 | 2020-05-29 | Beneq Oy | Apparatus for processing the surface of a substrate |
US10916704B2 (en) * | 2018-04-03 | 2021-02-09 | Universal Display Corporation | Vapor jet printing |
FI129731B (en) * | 2018-04-16 | 2022-08-15 | Beneq Oy | Nozzle head, apparatus and procedure |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110121283A1 (en) * | 2009-11-20 | 2011-05-26 | Levy David H | Method for selective deposition and devices |
CN102197157A (zh) * | 2008-08-27 | 2011-09-21 | 荷兰应用自然科学研究组织Tno | 用于原子层沉积的装置和方法 |
US20130143415A1 (en) * | 2011-12-01 | 2013-06-06 | Applied Materials, Inc. | Multi-Component Film Deposition |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6746539B2 (en) | 2001-01-30 | 2004-06-08 | Msp Corporation | Scanning deposition head for depositing particles on a wafer |
JP4356113B2 (ja) * | 2005-08-08 | 2009-11-04 | セイコーエプソン株式会社 | 製膜方法、パターニング方法、光学装置の製造方法、および電子装置の製造方法 |
US8039052B2 (en) * | 2007-09-06 | 2011-10-18 | Intermolecular, Inc. | Multi-region processing system and heads |
US8030212B2 (en) * | 2007-09-26 | 2011-10-04 | Eastman Kodak Company | Process for selective area deposition of inorganic materials |
US7972898B2 (en) * | 2007-09-26 | 2011-07-05 | Eastman Kodak Company | Process for making doped zinc oxide |
EP2362001A1 (en) * | 2010-02-25 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and device for layer deposition |
US8840958B2 (en) * | 2011-02-14 | 2014-09-23 | Veeco Ald Inc. | Combined injection module for sequentially injecting source precursor and reactant precursor |
EP2557198A1 (en) | 2011-08-10 | 2013-02-13 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
US20140061795A1 (en) * | 2012-08-31 | 2014-03-06 | David H. Levy | Thin film transistor including improved semiconductor interface |
US9598769B2 (en) * | 2013-07-24 | 2017-03-21 | Uchicago Argonne, Llc | Method and system for continuous atomic layer deposition |
-
2013
- 2013-06-27 FI FI20135707A patent/FI126043B/en active IP Right Grant
-
2014
- 2014-06-26 WO PCT/FI2014/050527 patent/WO2014207316A1/en active Application Filing
- 2014-06-26 JP JP2016522681A patent/JP6681829B2/ja active Active
- 2014-06-26 CN CN201480037183.2A patent/CN105392915B/zh active Active
- 2014-06-26 US US14/900,816 patent/US9708710B2/en active Active
- 2014-06-26 DE DE112014003000.7T patent/DE112014003000T5/de active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102197157A (zh) * | 2008-08-27 | 2011-09-21 | 荷兰应用自然科学研究组织Tno | 用于原子层沉积的装置和方法 |
US20110121283A1 (en) * | 2009-11-20 | 2011-05-26 | Levy David H | Method for selective deposition and devices |
US20130143415A1 (en) * | 2011-12-01 | 2013-06-06 | Applied Materials, Inc. | Multi-Component Film Deposition |
Non-Patent Citations (1)
Title |
---|
PAUL POODT ET AL.: "Spatial atomic layer deposition: a route towards further industrialization of atomic layer deposition", 《J. VAC. SCI. TECHNOL. A》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106048561A (zh) * | 2016-08-17 | 2016-10-26 | 武汉华星光电技术有限公司 | 一种原子层沉积装置及方法 |
CN106048561B (zh) * | 2016-08-17 | 2019-02-12 | 武汉华星光电技术有限公司 | 一种原子层沉积装置及方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105392915B (zh) | 2018-11-13 |
FI126043B (en) | 2016-06-15 |
DE112014003000T5 (de) | 2016-03-31 |
US9708710B2 (en) | 2017-07-18 |
JP6681829B2 (ja) | 2020-04-15 |
JP2016527395A (ja) | 2016-09-08 |
US20160168703A1 (en) | 2016-06-16 |
FI20135707A (fi) | 2014-12-28 |
WO2014207316A1 (en) | 2014-12-31 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Espoo, Finland Patentee after: BENEQ Group Ltd. Address before: Espoo Finland Patentee before: BENEQ OY |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220826 Address after: Espoo, Finland Patentee after: BENEQ OY Address before: Espoo, Finland Patentee before: BENEQ Group Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230427 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Patentee after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Espoo, Finland Patentee before: BENEQ OY |