CN105374871A - 鳍状结构及其形成方法 - Google Patents

鳍状结构及其形成方法 Download PDF

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CN105374871A
CN105374871A CN201410416418.0A CN201410416418A CN105374871A CN 105374871 A CN105374871 A CN 105374871A CN 201410416418 A CN201410416418 A CN 201410416418A CN 105374871 A CN105374871 A CN 105374871A
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fin
ridge portion
insulating barrier
fin structure
etchant
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CN105374871B (zh
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黄南元
刘安淇
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United Microelectronics Corp
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Abstract

本发明公开一种鳍状结构及其形成方法，其中该鳍状结构包含一鳍片以及一突状物。该鳍片及该突状物均是位于一基底上，该突状物具有不规则形状，且该突状物的高度小于该鳍片的高度。由此，本发明的鳍状结构及其形成方法可达到避免鳍片倒塌及过度蚀刻等目的。

Description

鳍状结构及其形成方法
技术领域
本发明涉及一种鳍状结构(finstructure)及其制造方法，特别是涉及一种具有不规则形状的鳍状结构及其制造方法。
背景技术
随着半导体元件尺寸的缩小，维持小尺寸半导体元件的效能是目前业界的主要目标。然而，随着场效晶体管(fieldeffecttransistors，FETs)元件尺寸持续地缩小，平面式(planar)场效晶体管元件的发展已面临制作工艺上的极限。非平面(non-planar)式场效晶体管元件，例如鳍状场效晶体管(finfieldeffecttransistor，FinFET)元件，具有立体结构可增加与栅极之间接触面积，进而提升栅极对于通道区域的控制，俨然已取代平面式场效晶体管成为目前的主流发展趋势。
现有鳍状场效晶体管的制作工艺是先将鳍状结构形成于基底上，再将栅极形成于鳍状结构上。鳍状结构一般为蚀刻基底所形成的条状鳍片，但在尺寸微缩的要求下，各鳍片宽度渐窄，而鳍片之间的间距也渐缩小。因此，其制作工艺也面临许多限制与挑战，例如现有掩模及光刻蚀刻技术受限于微小尺寸的限制，无法准确定义鳍状结构的位置而造成鳍片倒塌，或是无法准确控制蚀刻时间而导致过度蚀刻等问题，连带影响鳍状结构的作用效能。
因此，现有的鳍状结构及其形成方法尚无法完全满足产品需求，宜进一步改良。
发明内容
本发明的一目的在于提供一种解决上述问题的方法，以形成具有较佳作用效能的鳍状结构。
本发明的另一目的在于提供一种鳍状结构，其具有较佳的作用效能。
为达上述的目的，本发明提供一种形成鳍状结构的方法，包含以下步骤。首先，在一基底上形成一第一鳍片及第二鳍片。接着，进行一第一蚀刻制作工艺，移除该第二鳍片的一部分。之后，进行一第二蚀刻制作工艺，移除该第二鳍片的另一部分，以在该第二鳍片形成不规则形状。最后，进行一第三蚀刻制作工艺，移除该第二鳍片的再一部分，以形成一突状物，其中该突状物的高度小于该第一鳍片的高度。
为达上述的目的，本发明提供一种鳍状结构，其特征在于包含一鳍片；以及一突状物。该鳍片及该突状物均是位于一基底上，该突状物具有不规则形状，且该突状物的高度小于该鳍片的高度。
本发明的鳍状结构的形成方法主要是利用阶段性地鳍片切割制作工艺，渐进地进行虚拟鳍片的蚀刻，同时在第二阶段的蚀刻制作工艺中，选用对于硅基底具有较高蚀刻比例的蚀刻剂，以提升对于虚拟鳍片的蚀刻效果。因此，利用本发明的方法可有效地移除虚拟鳍片，同时可避免发生倒塌或过度蚀刻等问题。再者，经由本发明的方法，可形成具有不规则形状的鳍状结构，使其具有优化的作用效能。
附图说明
图1至图9分别是本发明一优选实施例的鳍状结构的形成方法示意图；
图10是本发明一优选实施例的鳍状结构的电显图。
主要元件符号说明
10鳍状结构
100基底
110掩模层
111第一掩模层
113第二掩模层
115第三掩模层
120轴心体
130间隙壁
140掩模层
150有机介电层
300鳍片
310鳍片
320鳍片
330突状物
350绝缘层
360孔洞
370介电层
P1间隔
W1宽度
具体实施方式
为使熟悉本发明所属技术领域的一般技术者能更进一步了解本发明，下文特详细说明本发明的构成内容及所欲达成的功效，使该领域的一般技术人士得以具以实施。
图1至图9绘示本发明一优选实施例的鳍状结构的形成方法示意图，其中，图1、图2及图4分别为鳍状结构各形成阶段的上视图，图3及图5则分别为沿着图2的剖面线A-A以及沿着图4的剖面线B-B的剖面示意图，其余则是鳍状结构的形成阶段的剖面示意图。
请先参照图1至图3所示，首先，提供一基底100，再于基底100上形成分别一掩模层110。具体来说，基底100例如是一半导体基底，包含硅基底、硅锗基底(silicongermaniumsubstrate)、碳硅基底(siliconcarbidesubstrate)或硅覆绝缘(silicononinsulator，SOI)基底等。而掩模层110是全面性地形成在基底100的表面上，例如可选择利用化学气相沉积(chemicalvapordeposition，CVD)或物理气相沉积(physicalvapordeposition，PVD)等制作工艺。其中，掩模层110可以是单层或多层结构，例如是包含氧化物层、氮化物层等的多层结构。本实施例的掩模层110是由一第一掩模层111，例如是一氧化硅(siliconoxide)层；一第二掩模层113，例如是一氮化硅(siliconnitride)层；以及一第三掩模层115，例如是一氧化硅层所组成，但不以此为限。
随后，如图1所示，在基底100的掩模层110上形成多个图案化的轴心体(mandrel)120。在本实施例中，轴心体120的制作工艺可利用一般现有的半导体制作工艺，例如可进行一标准栅极制作工艺，以形成多个栅极图案作为各个轴心体120于基底100上，但本发明并不以此为限。此外，轴心体120的材质可以是多晶硅(polysilicon)，或是其他合适的材料，如氧化硅、氮化硅等。具体来说，各轴心体120之间优选是相互分隔，使任两相邻的轴心体120间具有一间隔(pitch)P1。值得注意的是，间隔(pitch)P1至少大于轴心体120的宽度W1，例如是约为80微米至100微米，但不以此为限。
接着，先全面性地在掩模层110上形成一侧壁材料层(未绘示)，覆盖各轴心体120。而后，进行一回蚀刻制作工艺，移除部分的侧壁材料层，暴露出部分的掩模层110以形成环绕各轴心体120的间隙壁130。在本实施例中，间隙壁130的制作工艺也可整合前述的栅极制作工艺，形成包含氮化物材质的间隙壁130，但不以此为限。在其他实施例中，也可选择使用其他与轴心体具有蚀刻选择比的材料，并利用其他制作工艺形成。
后续，如图2及图3所示，图3为沿着图2的剖面线A-A的剖面示意图。移除轴心体120，剩下具有封闭式的矩形框架的间隙壁130位于基底100的掩模层110上。值得注意的是，间隙壁130具有小于轴心体120宽度W1的宽度。然后利用间隙壁130作为蚀刻掩模来进行图案转移制作工艺，以于基底100中进一步形成一初始的鳍状结构(未绘示)。例如，进行至少一干蚀刻、湿蚀刻或依序进行干蚀刻及湿蚀刻制作工艺等，将间隙壁130的图案逐次性地或一次性地转移至下方的掩模层110及基底100，以形成初始鳍状结构，且该等初始鳍状结构具有跟间隙壁130相同的布局图案，随后则移除间隙壁130，但本发明并不以此为限。
在形成初始的鳍状结构之后，则如图4至图8所示，继续进行一鳍片切割(fincut)制作工艺，移除该初始鳍状结构中不必要的鳍片，例如是虚拟鳍片(dummyfin)以及两端相连接的部分等。
首先，参照图4所示。先选择性地在基底100上全面形成一平坦化的有机介电层(organicdielectriclayer，ODL)150，再图案化有机介电层150。具体来说，有机介电层150是完全覆盖在该初始鳍状结构的各鳍片300上，并填入各鳍片300之间。接着，在有机介电层150上形成一图案化的掩模层140，例如光致抗蚀剂层，并以设置在有机介电层150上的该些掩模层140为蚀刻掩模，进行一移除制作工艺，例如是干蚀刻，移除掩模层140外的有机介电层150且部分移除其下方对应的鳍片320，而不蚀刻位于掩模层140下方的有机介电层150及鳍片310，然后移除掩模层140，如图5所示。值得注意的是，此阶段的移除制作工艺主要是先进行一图案转移制作工艺，以将掩模层140的图案转移至下方的有机介电层150与该初始鳍状结构中，以使该等初始鳍状结构具有跟掩模层140相同的布局图案，而且本阶段的移除制作工艺至少要同时蚀刻掉其下方对应鳍片320的掩模层110，以暴露出下方相对应的鳍片320。换言之，此时基底100上仅裸露有两种材质，即被图案化的有机介电层150以及被其所曝露的鳍片320
接续，再利用后续阶段性的蚀刻制作工艺，进一步进行该些鳍片320的切割制作工艺。本实施例的鳍片切割制作工艺主要是利用蚀刻比不同(相对于有机介电层150与鳍片320)的蚀刻剂，阶段性地切割鳍片，例如是包含三阶段的蚀刻制作工艺，第一蚀刻制作工艺、第二蚀刻制作工艺及第三蚀刻制作工艺，在三阶段的蚀刻制作工艺是使用不同的蚀刻剂进行处理。
在第一蚀刻制作工艺中，例如是一干蚀刻制作工艺，主要是利用一第一蚀刻剂进行蚀刻。该第一蚀刻剂对于硅基底(鳍片320)与氧化物(有机介电层150)具有相同的蚀刻率，也就是说，该第一蚀刻剂会同时蚀刻暴露出的鳍片320与有机介电层150，并且移除一部分的鳍片320与一部分的有机介电层150，如图6所示。在一实施例中，该第一蚀刻剂可包含一卤素，例如是四氟化碳(carbontetrafluoride，CF4)、三氟甲烷(Trifluoromethane，CHF3)或其组合等，以及氧气，但不以此为限。
随后，进行第二蚀刻制作工艺，主要是利用一第二蚀刻剂进行蚀刻。该第二蚀刻剂则是对于硅基底具有较高的蚀刻速率，也就是说，该第二蚀刻剂主要会对暴露出的鳍片320进一步蚀刻，如图7所示。值得注意的是，由于该第二蚀刻剂则是对于氧化物具有较低的蚀刻速率，因此有机介电层150的开口会往下而内缩，降低了开口底部的第二蚀刻剂与蚀刻残余物的置换量，加上蚀刻剂配方等因素，该第二蚀刻剂除了进一步移除部分的鳍片320，还会使蚀刻后的鳍片320形成不规则的形状，例如是具有不规则的表面，尤其是指顶表面。在一实施例中，该第二蚀刻剂包含溴化氢(hydrogenbromide，HBr)、氯化氢(hydrogenchloride，HCl)或其组合物，以及极微量的氧气，其中，溴化氢或氯化氢的体积比大体上约为65％至85％，但不以此为限。
之后，则进行第三蚀刻制作工艺，主要是利用一第三蚀刻剂进行蚀刻。该第三蚀刻剂的成分大体上与该第一蚀刻剂相同，对于硅基底与氧化物具有相同的蚀刻率。因此，在第三蚀刻制作工艺中，会持续蚀刻暴露出的鳍片320与有机介电层150，如图8所示。也就是说，与第一蚀刻制作工艺相似，在该第三蚀刻制作工艺中，除了进一步移除部分的鳍片320，以在基底100形成具有不规则形状的一突状物330之外，同时也会进一步移除一部分的有机介电层150。在一实施例中，该第三蚀刻剂优选是包含与该第一蚀刻剂相同的成份但不同的比例，例如第一蚀刻剂包含CF4/CHF3/O2，其体积比为100:100:15，而第三蚀刻剂包含CF4/CHF3/O2，其体积比则为66/100/10，本发明并不以此为限。在其他实施例中，该第三蚀刻剂也可选择包含与该第一蚀刻剂相同的成份以及比例，或是不同的成份。
待完全移除有机介电层150之后，如图9所示，在鳍片310与突状物330之间填入一绝缘材料(未绘示)，形成一绝缘层350。详细来说，绝缘材料直接覆盖鳍片310与突状物330上，而后，可选择对绝缘材料进行一适当的平坦化制作工艺，例如是化学机械平坦化制作工艺(chemicalmechanicalplanarizationorpolishing，CMP)，先以鳍片310的掩模层110为蚀刻停止层，先移除绝缘材料的一部分，在进行一回蚀刻制作工艺，以于各鳍片310之间形成绝缘层350，用来当作浅沟隔离(STI)。值得注意的是，鳍片310具有至少大于突状物330三倍以上的高度，因此，绝缘层350可完全覆盖突状物330，但仅部分覆盖各鳍片310的侧壁，使鳍片310的一部分可自绝缘层350中凸伸出来。在一实施例中，在形成绝缘层350之后，也可选择移除掩模层110，而后，本发明的方法则可接续一般半导体的制作工艺，在鳍片310上形成栅极(未绘示)，即为三栅极晶体管(tri-gate)，但不以此为限。在其他实施例中，也可选择不移除掩模层110，而形成双栅极晶体管(dual-gate)。
此外，因突状物330与鳍片310之间具有显著的高宽比(aspectratio)，因此，在填入绝缘材料时，容易在邻近突状物330处产生孔洞360，或是在突状物330与鳍片之间，但不以此为限。
另外，在本发明的其他实施例中，也可选择在填入绝缘材料前，先操作一热氧化制作工艺，以在鳍片310及突状物330表面全面性的形成一介电层370，例如是氧化硅层。换言之，介电层370是位于鳍片310与绝缘层350之间，以及突状物330与绝缘层350之间，由此，介电层370可作为一衬垫层，其可为单层或多层结构，但本发明并不以此为限。
由前述实施例则可得知，本发明的鳍状结构的形成方法主要是利用阶段性地鳍片切割制作工艺，渐进地进行虚拟鳍片的蚀刻，同时在第二阶段的蚀刻制作工艺中，选用对于硅基底具有较高蚀刻比例的蚀刻剂，以提升对于虚拟鳍片的蚀刻效果。由此，达到避免鳍片倒塌及过度蚀刻等目的。
再者，经由前述的方法，可形成具有不规则形状的鳍状结构10，如图9所示。该鳍状结构10具有位于基底100上的鳍片310，及突状物330。其中，突状物330的高度至少小于鳍片310高度的三分之一，例如是约为10埃(angstroms)至300埃之间，但不以此为限。值得注意的是，突状物330具有不规则的形状，例如是整体外观呈不规则形状，或是具有不规则的表面，特别是指顶表面。
本实施例的鳍状结构10还包含一绝缘层350，是完全覆盖在突状物330之上，但仅部分覆盖各鳍片310，因此，使鳍片310的一部分可自绝缘层350中凸伸出。并且，绝缘层350还包含一孔洞360，是位于邻近突状物330处，例如是位于突状物330与鳍片之间，或是位于突状物330的不规则表面附近，但并不以此为限。请参照图10，图10是本发明一较佳实施例的鳍状结构10的电显图。如图10所示，孔洞多数是位于不规则的突状物附近，特别是在其不规则的表面附近，或者是位于两鳍片之间。值得注意的是，当鳍状结构具有一个以上的鳍片时，该些孔洞可有效隔离相邻的两鳍片，进而提升各鳍片的作用效能。
另外，在其他实施例中，鳍状结构10还可以另包含一介电层370，位于鳍片310与绝缘层350之间，以及突状物330与绝缘层350之间。
由此可知，通过本发明的鳍状结构的形成方法，可渐进地进行虚拟鳍片的蚀刻，进而提升对于虚拟鳍片的蚀刻效果，避免在鳍片切割的过程中发生鳍片倒塌或过度蚀刻等问题。同时，经由本发明的方法，可形成具有不规则形状的鳍状结构，该鳍状结构具有不规则的突状物与孔洞，可有效隔离相邻的两鳍片，使该鳍片结构具有优化的作用效能。
以上所述仅为本发明的优选实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (20)

1.一种鳍状结构，其特征在于，该鳍状结构包含:
鳍片，位于一基底上；以及
突状物，位于该基底上，其中该突状物具有不规则形状，且该突状物的高度小于该鳍片的高度。
2.根据权利要求1所述的鳍状结构，其特征在于，该鳍片的高度至少是该突状物的高度的三倍以上。
3.根据权利要求1所述的鳍状结构，其特征在于，该突状物的高度介于10埃(angstroms)至300埃之间。
4.根据权利要求1所述的鳍状结构，其特征在于，该鳍状结构还包含绝缘层，位于该鳍片与该突状物之间。
5.根据权利要求4所述的鳍状结构，其特征在于，该绝缘层覆盖该突状物，且该鳍片的一部分自该绝缘层中凸伸出。
6.根据权利要求4所述的鳍状结构，其特征在于，该绝缘层具有孔洞，邻近该突状物。
7.根据权利要求4所述的鳍状结构，其特征在于，该绝缘层具有孔洞，位于该鳍片与突状物之间。
8.根据权利要求4所述的鳍状结构，其特征在于，该鳍状结构还包含介电层，位于该绝缘层与该鳍片之间，以及该绝缘层与该突状物之间。
9.根据权利要求1所述的鳍状结构，其特征在于，该突状物的顶面呈不规则状。
10.根据权利要求1所述的鳍状结构，其特征在于，该突状物的整体外观呈不规则状。
11.一种形成鳍状结构的方法，其特征在于，包含:
在一基底上形成一第一鳍片及第二鳍片；
进行一第一蚀刻制作工艺，移除该第二鳍片的一部分；
进行一第二蚀刻制作工艺，移除该第二鳍片的另一部分，以在该第二鳍片形成不规则形状；以及
进行一第三蚀刻制作工艺，移除该第二鳍片的再一部分，以形成一突状物，其中该突状物的高度小于该第一鳍片的高度。
12.根据权利要求11所述的方法，其特征在于，该第一鳍片还包含第一掩模层，位于该第一鳍片上，该第二鳍片还包含第二掩模层，位于该第二鳍片上。
13.根据权利要求12所述的方法，其特征在于，还包含:
在该基底上形成一有机介电层，该有机介电层覆盖该第一鳍片及该第二鳍片；以及
移除该有机介电层覆盖在该第二鳍片上的部分，并且移除该第二掩模层。
14.根据权利要求13所述的方法，其特征在于，在该第一蚀刻制作工艺中是利用一第一蚀刻剂，该第一蚀刻剂包含四氟化碳。
15.根据权利要求14所述的方法，其特征在于，在该第二蚀刻制作工艺中是利用一第二蚀刻剂，该第二蚀刻剂对于该第二鳍片具有较高的蚀刻率。
16.根据权利要求15所述的方法，其特征在于，在该第二蚀刻剂，包含溴化氢、氯化氢或是溴化氢及氯化氢的组合物。
17.根据权利要求13所述的方法，其特征在于，在该第三蚀刻制作工艺中是利用一第三蚀刻剂，该第三蚀刻剂与该第一蚀刻剂相同。
18.根据权利要求11所述的方法，其特征在于，还包含:
在进行该第一蚀刻制作工艺、该第二蚀刻制作工艺及该第三蚀刻制作工艺后形成一绝缘层，其中该绝缘层是形成在该第一鳍片与该突状物之间，并覆盖该突状物，且该第一鳍片的一部分自该绝缘层中凸伸出。
19.根据权利要求18所述的方法，其特征在于，形成该绝缘层的步骤还包含:
在该基底上形成一绝缘材料，覆盖该第一鳍片及该突状物；以及
移除该绝缘材料层的一部分，以形成该绝缘层。
20.根据权利要求18所述的方法，其特征在于，还包含:
形成一介电层，该介电层是位于该绝缘层与该第一鳍片之间，及位于该绝缘层与突状物之间。
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