CN105340079B - 背面照射型图像传感器、成像装置和电子设备 - Google Patents

背面照射型图像传感器、成像装置和电子设备 Download PDF

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Publication number
CN105340079B
CN105340079B CN201480036251.3A CN201480036251A CN105340079B CN 105340079 B CN105340079 B CN 105340079B CN 201480036251 A CN201480036251 A CN 201480036251A CN 105340079 B CN105340079 B CN 105340079B
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China
Prior art keywords
wiring
light
layer
receive
pixel region
Prior art date
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Expired - Fee Related
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CN201480036251.3A
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English (en)
Chinese (zh)
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CN105340079A (zh
Inventor
萩田忠弘
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201480036251.3A 2013-07-29 2014-07-22 背面照射型图像传感器、成像装置和电子设备 Expired - Fee Related CN105340079B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013156903A JP6209890B2 (ja) 2013-07-29 2013-07-29 裏面照射型イメージセンサ、撮像装置、および電子機器
JP2013-156903 2013-07-29
PCT/JP2014/003838 WO2015015753A1 (en) 2013-07-29 2014-07-22 Back surface radiation type image sensor, imaging device, and electronic apparatus

Publications (2)

Publication Number Publication Date
CN105340079A CN105340079A (zh) 2016-02-17
CN105340079B true CN105340079B (zh) 2019-01-29

Family

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CN201480036251.3A Expired - Fee Related CN105340079B (zh) 2013-07-29 2014-07-22 背面照射型图像传感器、成像装置和电子设备

Country Status (7)

Country Link
US (1) US10050077B2 (enExample)
EP (1) EP3028306B1 (enExample)
JP (1) JP6209890B2 (enExample)
KR (1) KR102276530B1 (enExample)
CN (1) CN105340079B (enExample)
TW (1) TWI633653B (enExample)
WO (1) WO2015015753A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018034092A1 (ja) * 2016-08-18 2019-06-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
JP7066316B2 (ja) * 2016-12-13 2022-05-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び電子機器
KR20180071802A (ko) 2016-12-20 2018-06-28 삼성전자주식회사 이미지 센서
WO2021149577A1 (ja) * 2020-01-24 2021-07-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102760744A (zh) * 2011-04-26 2012-10-31 佳能株式会社 固态图像传感器和摄像设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3137072B2 (ja) * 1998-04-30 2001-02-19 日本電気株式会社 半導体集積回路の自動配線レイアウト方法
JP3877565B2 (ja) * 2001-10-04 2007-02-07 松下電器産業株式会社 撮像装置
US6815787B1 (en) * 2002-01-08 2004-11-09 Taiwan Semiconductor Manufacturing Company Grid metal design for large density CMOS image sensor
WO2003079675A1 (en) * 2002-03-20 2003-09-25 Sony Corporation Solid-state image pickup device and its drive method
JP4147861B2 (ja) * 2002-08-06 2008-09-10 ソニー株式会社 固体撮像素子の製造方法
JP4826111B2 (ja) 2005-03-17 2011-11-30 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法および画像撮影装置
JP5187934B2 (ja) * 2007-07-26 2013-04-24 株式会社サトー知識財産研究所 検査支援装置
JP5173493B2 (ja) * 2008-02-29 2013-04-03 キヤノン株式会社 撮像装置及び撮像システム
JP5198150B2 (ja) * 2008-05-29 2013-05-15 株式会社東芝 固体撮像装置
KR101545638B1 (ko) * 2008-12-17 2015-08-19 삼성전자 주식회사 이미지 센서 및 그 제조 방법, 이미지 센서를 포함하는 장치 및 그 제조 방법
JP5306123B2 (ja) * 2009-09-11 2013-10-02 株式会社東芝 裏面照射型固体撮像装置
JP2011129627A (ja) * 2009-12-16 2011-06-30 Panasonic Corp 半導体装置
JP5696513B2 (ja) * 2011-02-08 2015-04-08 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5919653B2 (ja) * 2011-06-09 2016-05-18 ソニー株式会社 半導体装置
JP5956866B2 (ja) * 2011-09-01 2016-07-27 キヤノン株式会社 固体撮像装置
JP5893302B2 (ja) * 2011-09-01 2016-03-23 キヤノン株式会社 固体撮像装置
JP6026102B2 (ja) 2011-12-07 2016-11-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102760744A (zh) * 2011-04-26 2012-10-31 佳能株式会社 固态图像传感器和摄像设备

Also Published As

Publication number Publication date
TWI633653B (zh) 2018-08-21
TW201508906A (zh) 2015-03-01
US20160204147A1 (en) 2016-07-14
EP3028306B1 (en) 2020-04-29
WO2015015753A1 (en) 2015-02-05
KR102276530B1 (ko) 2021-07-13
EP3028306A1 (en) 2016-06-08
US10050077B2 (en) 2018-08-14
JP2015026786A (ja) 2015-02-05
JP6209890B2 (ja) 2017-10-11
KR20160037882A (ko) 2016-04-06
CN105340079A (zh) 2016-02-17

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