TWI633653B - 背面輻射式影像感測器，成像器件及電子裝置 - Google Patents

背面輻射式影像感測器，成像器件及電子裝置 Download PDF

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Publication number
TWI633653B
TWI633653B TW103125155A TW103125155A TWI633653B TW I633653 B TWI633653 B TW I633653B TW 103125155 A TW103125155 A TW 103125155A TW 103125155 A TW103125155 A TW 103125155A TW I633653 B TWI633653 B TW I633653B
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TW
Taiwan
Prior art keywords
light
layer
wiring
wiring lines
dummy wiring
Prior art date
Application number
TW103125155A
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English (en)
Chinese (zh)
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TW201508906A (zh
Inventor
萩田忠弘
Original Assignee
新力股份有限公司
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Application filed by 新力股份有限公司 filed Critical 新力股份有限公司
Publication of TW201508906A publication Critical patent/TW201508906A/zh
Application granted granted Critical
Publication of TWI633653B publication Critical patent/TWI633653B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
TW103125155A 2013-07-29 2014-07-22 背面輻射式影像感測器，成像器件及電子裝置 TWI633653B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013156903A JP6209890B2 (ja) 2013-07-29 2013-07-29 裏面照射型イメージセンサ、撮像装置、および電子機器
JP2013-156903 2013-07-29

Publications (2)

Publication Number Publication Date
TW201508906A TW201508906A (zh) 2015-03-01
TWI633653B true TWI633653B (zh) 2018-08-21

Family

ID=51298916

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103125155A TWI633653B (zh) 2013-07-29 2014-07-22 背面輻射式影像感測器，成像器件及電子裝置

Country Status (7)

Country Link
US (1) US10050077B2 (enExample)
EP (1) EP3028306B1 (enExample)
JP (1) JP6209890B2 (enExample)
KR (1) KR102276530B1 (enExample)
CN (1) CN105340079B (enExample)
TW (1) TWI633653B (enExample)
WO (1) WO2015015753A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018034092A1 (ja) * 2016-08-18 2019-06-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
JP7066316B2 (ja) * 2016-12-13 2022-05-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び電子機器
KR20180071802A (ko) 2016-12-20 2018-06-28 삼성전자주식회사 이미지 센서
WO2021149577A1 (ja) * 2020-01-24 2021-07-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110140225A1 (en) * 2009-12-16 2011-06-16 Masafumi Tsutsui Semiconductor device
TW201133810A (en) * 2009-09-11 2011-10-01 Toshiba Kk Solid-state image sensor and method of manufacturing the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3137072B2 (ja) * 1998-04-30 2001-02-19 日本電気株式会社 半導体集積回路の自動配線レイアウト方法
JP3877565B2 (ja) * 2001-10-04 2007-02-07 松下電器産業株式会社 撮像装置
US6815787B1 (en) * 2002-01-08 2004-11-09 Taiwan Semiconductor Manufacturing Company Grid metal design for large density CMOS image sensor
WO2003079675A1 (en) * 2002-03-20 2003-09-25 Sony Corporation Solid-state image pickup device and its drive method
JP4147861B2 (ja) * 2002-08-06 2008-09-10 ソニー株式会社 固体撮像素子の製造方法
JP4826111B2 (ja) 2005-03-17 2011-11-30 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法および画像撮影装置
JP5187934B2 (ja) * 2007-07-26 2013-04-24 株式会社サトー知識財産研究所 検査支援装置
JP5173493B2 (ja) * 2008-02-29 2013-04-03 キヤノン株式会社 撮像装置及び撮像システム
JP5198150B2 (ja) * 2008-05-29 2013-05-15 株式会社東芝 固体撮像装置
KR101545638B1 (ko) * 2008-12-17 2015-08-19 삼성전자 주식회사 이미지 센서 및 그 제조 방법, 이미지 센서를 포함하는 장치 및 그 제조 방법
JP5696513B2 (ja) * 2011-02-08 2015-04-08 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5909051B2 (ja) * 2011-04-26 2016-04-26 キヤノン株式会社 固体撮像素子及び撮像装置
JP5919653B2 (ja) * 2011-06-09 2016-05-18 ソニー株式会社 半導体装置
JP5956866B2 (ja) * 2011-09-01 2016-07-27 キヤノン株式会社 固体撮像装置
JP5893302B2 (ja) * 2011-09-01 2016-03-23 キヤノン株式会社 固体撮像装置
JP6026102B2 (ja) 2011-12-07 2016-11-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201133810A (en) * 2009-09-11 2011-10-01 Toshiba Kk Solid-state image sensor and method of manufacturing the same
US20110140225A1 (en) * 2009-12-16 2011-06-16 Masafumi Tsutsui Semiconductor device

Also Published As

Publication number Publication date
TW201508906A (zh) 2015-03-01
US20160204147A1 (en) 2016-07-14
EP3028306B1 (en) 2020-04-29
WO2015015753A1 (en) 2015-02-05
KR102276530B1 (ko) 2021-07-13
EP3028306A1 (en) 2016-06-08
US10050077B2 (en) 2018-08-14
JP2015026786A (ja) 2015-02-05
JP6209890B2 (ja) 2017-10-11
CN105340079B (zh) 2019-01-29
KR20160037882A (ko) 2016-04-06
CN105340079A (zh) 2016-02-17

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