CN105339302A - 用于制备多晶硅的方法 - Google Patents

用于制备多晶硅的方法 Download PDF

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Publication number
CN105339302A
CN105339302A CN201480035722.9A CN201480035722A CN105339302A CN 105339302 A CN105339302 A CN 105339302A CN 201480035722 A CN201480035722 A CN 201480035722A CN 105339302 A CN105339302 A CN 105339302A
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CN
China
Prior art keywords
rod
polycrystalline silicon
rods
polysilicon
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480035722.9A
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English (en)
Chinese (zh)
Inventor
米夏埃尔·克舍尔
赖纳·佩什
阿明·桑德纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
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Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Priority to CN201811540457.6A priority Critical patent/CN110092383A/zh
Publication of CN105339302A publication Critical patent/CN105339302A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C23/00—Auxiliary methods or auxiliary devices or accessories specially adapted for crushing or disintegrating not provided for in preceding groups or not specially adapted to apparatus covered by a single preceding group
    • B02C23/08—Separating or sorting of material, associated with crushing or disintegrating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G01N29/09—Analysing solids by measuring mechanical or acoustic impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/023—Solids
    • G01N2291/0234—Metals, e.g. steel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Food Science & Technology (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201480035722.9A 2013-04-22 2014-03-24 用于制备多晶硅的方法 Pending CN105339302A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811540457.6A CN110092383A (zh) 2013-04-22 2014-03-24 用于制备多晶硅的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE201310207251 DE102013207251A1 (de) 2013-04-22 2013-04-22 Verfahren zur Herstellung von polykristallinem Silicium
DE102013207251.1 2013-04-22
PCT/EP2014/055837 WO2014173596A1 (de) 2013-04-22 2014-03-24 Verfahren zur herstellung von polykristallinem silicium

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201811540457.6A Division CN110092383A (zh) 2013-04-22 2014-03-24 用于制备多晶硅的方法

Publications (1)

Publication Number Publication Date
CN105339302A true CN105339302A (zh) 2016-02-17

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Family Applications (2)

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CN201480035722.9A Pending CN105339302A (zh) 2013-04-22 2014-03-24 用于制备多晶硅的方法
CN201811540457.6A Pending CN110092383A (zh) 2013-04-22 2014-03-24 用于制备多晶硅的方法

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Country Status (11)

Country Link
US (1) US10400329B2 (enExample)
EP (1) EP2989052B1 (enExample)
JP (1) JP6567501B2 (enExample)
KR (1) KR101801757B1 (enExample)
CN (2) CN105339302A (enExample)
DE (1) DE102013207251A1 (enExample)
ES (1) ES2677489T3 (enExample)
MY (1) MY178822A (enExample)
SA (1) SA515370027B1 (enExample)
TW (1) TWI516446B (enExample)
WO (1) WO2014173596A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114127011A (zh) * 2019-08-29 2022-03-01 瓦克化学股份公司 用于生产硅块的方法
CN117103478A (zh) * 2023-08-24 2023-11-24 西安奕斯伟材料科技股份有限公司 一种用于对不合格晶棒节段进行破碎的系统及方法

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* Cited by examiner, † Cited by third party
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WO2020233797A1 (de) 2019-05-21 2020-11-26 Wacker Chemie Ag Verfahren zur herstellung von polykristallinem silicium
WO2020234401A1 (de) 2019-05-21 2020-11-26 Wacker Chemie Ag Verfahren zur herstellung von polykristallinem silicium
KR102761414B1 (ko) 2019-06-11 2025-01-31 와커 헤미 아게 다결정 실리콘의 제조 방법
CN110967466B (zh) * 2019-11-13 2022-05-17 鞍钢集团矿业有限公司 采场空区稳定性的评价方法
US20230011307A1 (en) 2019-12-17 2023-01-12 Wacker Chemie Ag Method for producing and classifying polycrystalline silicon
CN111545327B (zh) * 2020-05-19 2021-09-17 铜仁职业技术学院 一种矿石加工装置
CN115591643B (zh) * 2022-10-21 2025-05-09 新特能源股份有限公司 一种硅棒的料性识别和区分方法、控制装置、控制系统、电子设备及存储介质
DE112024000844T5 (de) 2023-02-14 2025-11-27 Tokuyama Corporation Verfahren zur schätzung der leichtigkeit des auftretens von feinem pulver in polysilizium, schätzvorrichtung, verfahren zur herstellung von polysilizium, vorrichtung zur erzeugung eines trainierten modells und erzeugungsverfahren

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CN101135673A (zh) * 2006-08-30 2008-03-05 瓦克化学有限公司 高纯多晶硅的无损材料检测方法
CN102498064A (zh) * 2009-09-16 2012-06-13 信越化学工业株式会社 多晶硅块及多晶硅块的制造方法
CN102971624A (zh) * 2010-07-06 2013-03-13 信越化学工业株式会社 多晶硅棒以及多晶硅棒的制造方法

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CN101135673A (zh) * 2006-08-30 2008-03-05 瓦克化学有限公司 高纯多晶硅的无损材料检测方法
CN102498064A (zh) * 2009-09-16 2012-06-13 信越化学工业株式会社 多晶硅块及多晶硅块的制造方法
CN102971624A (zh) * 2010-07-06 2013-03-13 信越化学工业株式会社 多晶硅棒以及多晶硅棒的制造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114127011A (zh) * 2019-08-29 2022-03-01 瓦克化学股份公司 用于生产硅块的方法
CN114127011B (zh) * 2019-08-29 2024-03-08 瓦克化学股份公司 用于生产硅块的方法
CN117103478A (zh) * 2023-08-24 2023-11-24 西安奕斯伟材料科技股份有限公司 一种用于对不合格晶棒节段进行破碎的系统及方法

Also Published As

Publication number Publication date
KR20150141191A (ko) 2015-12-17
WO2014173596A1 (de) 2014-10-30
US10400329B2 (en) 2019-09-03
TW201441151A (zh) 2014-11-01
KR101801757B1 (ko) 2017-11-27
SA515370027B1 (ar) 2018-07-18
EP2989052A1 (de) 2016-03-02
JP6567501B2 (ja) 2019-08-28
ES2677489T3 (es) 2018-08-02
MY178822A (en) 2020-10-20
JP2016516666A (ja) 2016-06-09
US20160068949A1 (en) 2016-03-10
CN110092383A (zh) 2019-08-06
TWI516446B (zh) 2016-01-11
DE102013207251A1 (de) 2014-10-23
EP2989052B1 (de) 2018-05-30

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Application publication date: 20160217