KR101801757B1 - 다결정질 실리콘의 제조 방법 - Google Patents

다결정질 실리콘의 제조 방법 Download PDF

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Publication number
KR101801757B1
KR101801757B1 KR1020157032942A KR20157032942A KR101801757B1 KR 101801757 B1 KR101801757 B1 KR 101801757B1 KR 1020157032942 A KR1020157032942 A KR 1020157032942A KR 20157032942 A KR20157032942 A KR 20157032942A KR 101801757 B1 KR101801757 B1 KR 101801757B1
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rod
polycrystalline silicon
reactor
classification
silicon
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KR20150141191A (ko
Inventor
마이클 커셔
라이너 페흐
아르민 샌드너
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와커 헤미 아게
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C23/00—Auxiliary methods or auxiliary devices or accessories specially adapted for crushing or disintegrating not provided for in preceding groups or not specially adapted to apparatus covered by a single preceding group
    • B02C23/08—Separating or sorting of material, associated with crushing or disintegrating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G01N29/09—Analysing solids by measuring mechanical or acoustic impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/023—Solids
    • G01N2291/0234—Metals, e.g. steel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Food Science & Technology (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020157032942A 2013-04-22 2014-03-24 다결정질 실리콘의 제조 방법 Active KR101801757B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE201310207251 DE102013207251A1 (de) 2013-04-22 2013-04-22 Verfahren zur Herstellung von polykristallinem Silicium
DE102013207251.1 2013-04-22
PCT/EP2014/055837 WO2014173596A1 (de) 2013-04-22 2014-03-24 Verfahren zur herstellung von polykristallinem silicium

Publications (2)

Publication Number Publication Date
KR20150141191A KR20150141191A (ko) 2015-12-17
KR101801757B1 true KR101801757B1 (ko) 2017-11-27

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Country Status (11)

Country Link
US (1) US10400329B2 (enExample)
EP (1) EP2989052B1 (enExample)
JP (1) JP6567501B2 (enExample)
KR (1) KR101801757B1 (enExample)
CN (2) CN105339302A (enExample)
DE (1) DE102013207251A1 (enExample)
ES (1) ES2677489T3 (enExample)
MY (1) MY178822A (enExample)
SA (1) SA515370027B1 (enExample)
TW (1) TWI516446B (enExample)
WO (1) WO2014173596A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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WO2020233797A1 (de) 2019-05-21 2020-11-26 Wacker Chemie Ag Verfahren zur herstellung von polykristallinem silicium
WO2020234401A1 (de) 2019-05-21 2020-11-26 Wacker Chemie Ag Verfahren zur herstellung von polykristallinem silicium
KR102761414B1 (ko) 2019-06-11 2025-01-31 와커 헤미 아게 다결정 실리콘의 제조 방법
JP7416914B2 (ja) * 2019-08-29 2024-01-17 ワッカー ケミー アクチエンゲゼルシャフト シリコンチャンクの製造方法
CN110967466B (zh) * 2019-11-13 2022-05-17 鞍钢集团矿业有限公司 采场空区稳定性的评价方法
US20230011307A1 (en) 2019-12-17 2023-01-12 Wacker Chemie Ag Method for producing and classifying polycrystalline silicon
CN111545327B (zh) * 2020-05-19 2021-09-17 铜仁职业技术学院 一种矿石加工装置
CN115591643B (zh) * 2022-10-21 2025-05-09 新特能源股份有限公司 一种硅棒的料性识别和区分方法、控制装置、控制系统、电子设备及存储介质
DE112024000844T5 (de) 2023-02-14 2025-11-27 Tokuyama Corporation Verfahren zur schätzung der leichtigkeit des auftretens von feinem pulver in polysilizium, schätzvorrichtung, verfahren zur herstellung von polysilizium, vorrichtung zur erzeugung eines trainierten modells und erzeugungsverfahren
CN117103478B (zh) * 2023-08-24 2025-12-30 西安奕斯伟材料科技股份有限公司 一种用于对不合格晶棒节段进行破碎的系统及方法

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JP2011063471A (ja) * 2009-09-16 2011-03-31 Shin-Etsu Chemical Co Ltd 多結晶シリコン塊および多結晶シリコン塊の製造方法

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DE19741465A1 (de) 1997-09-19 1999-03-25 Wacker Chemie Gmbh Polykristallines Silicium
DE10019601B4 (de) 2000-04-20 2006-09-14 Wacker Chemie Ag Verfahren zur Herstellung eines polykristallinen Siliciumstabes
DE102005019873B4 (de) * 2005-04-28 2017-05-18 Wacker Chemie Ag Vorrichtung und Verfahren zum maschinellen Zerkleinern von Halbleitermaterialien
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JP2006206387A (ja) * 2005-01-28 2006-08-10 Mitsubishi Materials Corp 多結晶シリコン還元炉及び多結晶シリコンロッド
JP2011063471A (ja) * 2009-09-16 2011-03-31 Shin-Etsu Chemical Co Ltd 多結晶シリコン塊および多結晶シリコン塊の製造方法

Also Published As

Publication number Publication date
KR20150141191A (ko) 2015-12-17
WO2014173596A1 (de) 2014-10-30
US10400329B2 (en) 2019-09-03
TW201441151A (zh) 2014-11-01
SA515370027B1 (ar) 2018-07-18
EP2989052A1 (de) 2016-03-02
JP6567501B2 (ja) 2019-08-28
ES2677489T3 (es) 2018-08-02
MY178822A (en) 2020-10-20
JP2016516666A (ja) 2016-06-09
US20160068949A1 (en) 2016-03-10
CN110092383A (zh) 2019-08-06
TWI516446B (zh) 2016-01-11
DE102013207251A1 (de) 2014-10-23
CN105339302A (zh) 2016-02-17
EP2989052B1 (de) 2018-05-30

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