CN105324846B - 形成具有势垒层中的金属接触的晶体管的方法 - Google Patents
形成具有势垒层中的金属接触的晶体管的方法 Download PDFInfo
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- 238000000576 coating method Methods 0.000 claims description 21
- 229910015844 BCl3 Inorganic materials 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 229910018503 SF6 Inorganic materials 0.000 claims description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 7
- 239000000460 chlorine Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000005036 potential barrier Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
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- -1 that is Chemical compound 0.000 claims 6
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- 238000000059 patterning Methods 0.000 description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- WRQGPGZATPOHHX-UHFFFAOYSA-N ethyl 2-oxohexanoate Chemical compound CCCCC(=O)C(=O)OCC WRQGPGZATPOHHX-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
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- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
使用第一气体组合和第二气体组合在III‑N族HEMT的势垒层(118)中蚀刻金属接触开口(132),第一气体组合向下蚀刻到势垒层(118)中,第二气体组合进一步向下蚀刻到势垒层(118)中达位于沟道层(116)的顶表面上方的深度,沟道层(116)的顶表面接触势垒层(118)并位于势垒层(118)下方。
Description
技术领域
本发明涉及形成具有III-N族高电子迁移率晶体管(HEMT)的集成电路的方法,该III-N族高电子迁移率晶体管(HEMT)具有在势垒层中的金属接触。
背景技术
III-N族高电子迁移率晶体管(HEMT)由于其更宽的带隙和高电子饱和速度而针对功率电子学展示出潜在优越性。这些材料特性转化为高击穿电压、低导通电阻以及快速切换。III-N族HEMT也可以操作在比硅基晶体管更高的温度。这些特性使III-N族HEMT良好地适用于高效率功率调节应用例如照明和车辆控制。
传统III-N族HEMT包括衬底和在衬底的顶表面上形成的层状结构。层状结构进而包括位于衬底上的缓冲层、位于缓冲层上的沟道层以及位于沟道层上的势垒层。进一步,层状结构可以可选地包括位于势垒层上的覆盖层(cap layer)。
缓冲层提供衬底和沟道层之间的过渡层,以便解决晶格常数差并提供位错最小化生长表面。沟道层和势垒层具有不同的极化特性和位于沟道层的顶部的诱导两维电子气(2DEG)的形成的带隙。具有高浓度电子的2DEG类似于传统场效应晶体管(FET)中的沟道。覆盖层增强III-N族HEMT的可靠性。
传统III-N族HEMT也包括被形成层状结构的顶表面上的金属栅极。金属栅极进行对势垒层(或覆盖层,如果存在的话)的肖特基(Schottky)接触。可替换地,金属栅极可由绝缘层与势垒层(或覆盖层,如果存在的话)绝缘。
此外,传统III-N族HEMT包括源极金属接触和与源极金属接触间隔(spacedapart)开的漏极接触。位于延伸到层状结构中的金属接触开口的源极金属接触和漏极金属接触进行与势垒层的欧姆接触。
天然III-N族衬底不易于得到。结果,III-N族HEMT通常使用单晶硅衬底。(碳化硅是另一种用于III-N HEMT的常见衬底材料。)层状结构传统上使用外延沉积技术例如金属有机化学气相沉积(MOCVD)和分子束外延(MBE)生长在衬底上。
层状结构中每个层通常被实施为具有一个或更多III序列族氮化物层,其中III族包括In、Ga和Al中的一种或更多种。例如,缓冲层可被实施为具有顺序的AlN(热稳定材料)、AlGaN以及GaN层。此外,沟道层通常由GaN形成,同时势垒层通常由AlGaN形成。进一步,盖层可由GaN形成。
源极金属接触和漏极金属接触通常通过在层状结构的顶表面上(如果存在的话,在覆盖层的顶表面上,或当不存在覆盖层时在势垒层的顶表面上)形成钝化层例如氮化硅层。然后,图案化光刻胶层被形成在钝化层上。
在图案化光刻胶层已经被形成之后,钝化层的暴露区域、覆盖层的底层(underlying)部分(如果存在的话)以及势垒层的底层部分使用包括CHF3、CF4、Ar和O2的气体组合被干蚀刻达预定时间段。
干蚀刻形成延伸通过钝化层、通过覆盖层(如果存在的话)并且进入势垒层的源极金属接触开口和漏极金属接触开口。控制金属接触开口的深度非常困难,这是因为蚀刻非常短,通常几秒钟。结果,金属接触开口的底表面常延伸通过势垒层并且进入沟道层。
然后,金属层被沉积以位于钝化层上方,并且填充金属接触开口。金属层然后被平面化以暴露钝化层的顶表面,并且分别在源极金属接触开口和漏极金属接触开口中形成源极金属接触和漏极金属接触。
发明内容
本发明提供了形成具有高电子迁移率晶体管(HEMT)的集成电路的方法,该高电子迁移率晶体管在暴露势垒层而不暴露沟道层的金属接触开口中具有金属接触。该方法包括使用第一气体组合蚀刻层状结构,从而形成数个金属接触开口。层状结构包括接触衬底并位于衬底上方的缓冲层、接触缓冲层并位于缓冲层上方的沟道层以及接触沟道层并位于沟道层上方的势垒层。每个金属接触开口都具有位于沟道层的顶表面上方并与沟道层的顶表面间隔开的第一底表面。该方法还包括使用第二气体组合蚀刻层状结构,从而加深每个金属接触开口的第一底表面距位于第一底表面下方的第二底表面一距离。第二底表面位于沟道层的顶表面上方并与沟道层的顶表面间隔开。
本发明还提供了形成具有金属接触开口中的HEMT金属接触的集成电路的替换性方法,该金属接触开口暴露势垒层而不暴露沟道层。该方法包括使用包含三氯化硼(BCl3)和六氟化硫(SF6)的气体组合蚀刻势垒层,从而形成数个金属接触开口。势垒层被形成在沟道层上,并且包括氮化镓(GaN)。每个金属接触开口都具有位于沟道层的顶表面上方并与沟道层的顶表面间隔开的底表面。该方法还包括使用包含三氯化硼(BCl3)和氯气(Cl2)的气体组合蚀刻由金属接触开口暴露的势垒层,从而加深金属接触开口到第二底表面。第二底表面位于沟道层的顶表面上方并与沟道层的顶表面间隔开。
附图说明
图1-5是示出形成包括III-N族高电子迁移率晶体管(HEMT)的集成电路的方法的示例的横截面图。
具体实施方式
图1-5示出形成包括III-N族高电子迁移率晶体管(HEMT)的集成电路的示例方法100。该方法使用两步蚀刻工艺形成在III-N族HEMT中的金属接触开口,该金属接触开口的深度易于控制且不延伸到沟道层中。
如图1所示,方法100使用传统形成的III-N族HEMT 108。HEMT108进而包括单晶、轻掺杂的、p型硅半导体衬底110(如,<111>)以及被形成在衬底110顶表面上的层状结构112。
层状结构112进而包括接触衬底110的缓冲层114、接触缓冲层114的沟道层116以及接触沟道层116的势垒层。进一步,层状结构112可以可选地包括位于势垒层118上方的覆盖层120。
缓冲层114由于晶格失配提供衬底100和沟道层116之间的过渡层。沟道层116和势垒层118具有不同的极化特性和诱导位于沟道层116顶部的两维电子气(2DEG)的形成的带隙。覆盖层120提供增强的可靠性。
层状结构112中每个层都可被实施为具有一个或更多顺序的(sequential)III族氮化物层,其中III族包括In、Ga、和Al中的一种或多种。例如,缓冲层114可被实施为具有顺序的AlN(热稳定材料)层、AlGaN层和GaN层。此外,沟道层116可由GaN形成,同时势垒层118可由AlGaN形成。进一步,覆盖层120可由GaN形成。
进一步,HEMT 108包括接触层状结构112的顶表面(如果存在覆盖层120,在覆盖层120的顶表面上,或当不存在覆盖层120时在势垒层118的顶表面上)的钝化层122。钝化层122可以被实施为具有例如氮化硅层。
如图1进一步所示,方法100通过在钝化层122上形成图案化光刻胶层124开始。图案化光刻胶层124是以传统方式形成的,传统方式包括沉积光刻胶层;将光投射通过称为掩膜的图案化黑色/透明玻璃板从而在光刻胶层上形成图案化图像,以软化曝光的光刻胶区域;并且除去软化的光刻胶区域。
如图2所示,在图案化光刻胶层124已经被形成之后,钝化层122的曝光区域、覆盖层120的底层部分(当存在时)以及势垒层118的底层部分使用包含三氯化硼(BCl3)和六氟化硫(SF6)的气体组合被干蚀刻,从而形成源极金属接触开口132和漏极金属接触开口132。
每个金属接触开口132具有位于沟道层116的顶表面上方并与沟道层116的顶表面相隔开的底表面136。在本示例中,使用以下蚀刻条件:
压力:19mT-21mT(优选20mT);
TCP RF:200W-400W(优选300W);
偏置RF:47.5W-52.5W(优选50W);
BCl3:20ccm-30ccm(优选25ccm);
SF6:45ccm-65ccm(优选55ccm);
He箝位(clamp):5T-10T(优选6T);以及
温度:45℃(degC)-65℃(优选55℃)。
BCl3和SF6气体组合在上述条件下向下蚀刻进入势垒层118达一定时间段,但是然后在该时间段之后蚀刻基本不再深入到势垒层118中。例如,BCl3和SF6气体组合在上述优选条件下在65秒的蚀刻时间期间向下蚀刻进入AlGaN势垒层118约(埃)的距离。
然而,从65秒到200秒,BCl3和SF6气体组合基本不再深入到AlGaN势垒层118中蚀刻。因此利用BCl3和SF6气体组合蚀刻势垒层118达预定时间,预定时间等于或大于时间段。
如图3所示,在BCl3和SF6蚀刻之后,气体被改变,并且由金属接触开口132暴露的势垒层118的区域使用包含BCl3和CL2的气体组合被干蚀刻达预定时间段,从而将每个底表面136加深至下部底表面(lower bottom surface)140。在本示例中,BCl3和CL2气体组合比BCl3和SF6气体组合蚀刻更多势垒层118。
每个下部底表面140位于沟道层116的顶表面上方并与其隔开间隔距离D。在蚀刻以后,图案化光刻胶层124以传统方式(如以灰化工艺(ash process))被除去。在本示例中,使用以下蚀刻条件:
压力:14mT-16mT(优选15mT);
TCP RF:200W-400W(优选300W);
偏置RF:8W-12W(优选10W);
BCl3:70ccm-90ccm(优选80ccm);
Cl2:10ccm-30ccm(优选20ccm);
He箝位:5T-10T(优选6T);以及
温度:45℃-65℃(优选55℃)。
BCl3和CL2气体组合在上述条件下以大约的(慢)速率进一步向下蚀刻进入势垒层118。因为势垒层118中金属接触开口132的初始深度被蚀刻大约并且由于BCl3和CL2气体以大约的速率向下蚀刻进入势垒层118,金属接触开口132的最终深度可易于被控制。
例如,如果势垒层118是厚且的势垒层118已经通过BCl3和SF6蚀刻被除去,那么BCl3和CL2蚀刻要求在约的速率下大约101.9秒,以便将每个金属接触开口132向下延伸另一进入势垒层118中,从而在势垒层118中深处形成下部底表面140,并留下间隔距离D。
约101.9秒的蚀刻时间比现有技术可用的几秒蚀刻显著更长,从而允许易于控制金属接触开口132的深度。因此,本发明的一个优点是源极金属接触开口和漏极金属接触开口132的深度可易于被控制,并防止暴露或延伸到沟道层116。
如图4所示,在源极金属接触开口和漏极金属接触开口132已经被加深到下部底表面140后,沉积金属层144被沉积以接触钝化层122的顶表面,并填充在势垒层118、覆盖层120以及钝化层122中的金属接触开口132。金属层144没有金,并可包括例如钛层、接触并位于钛层上方的铝铜层(0.5%Cu)以及接触并位于铝铜层上方的氮化钛覆盖。
如图5所示,在金属层144被形成之后,金属层144以传统方式(例如以化学-机械抛光)被平面化,从而暴露钝化层122的顶表面。平面化分别在源极金属接触开口和漏极金属接触开口132中形成源极金属接触和漏极金属接触150。平面化也形成III-N族HEMT结构152。金属接触150没有金,金属接触150进行到势垒层118的欧姆连接。方法100然后继续传统步骤,从而完成封装的III-N族HEMT的形成。
III-N族HEMT通常被形成为耗尽型模式器件,但也可被形成为增强型器件。
本领域技术人员应该理解,可对上述方法做出修改,并且在本发明保护范围内,许多其它实施例也是可能的。
Claims (14)
1.一种形成高电子迁移率晶体管的方法,其包括:
利用第一气体组合蚀刻层状结构从而形成数个金属接触开口,所述层状结构包括接触衬底并位于所述衬底上方的缓冲层、接触所述缓冲层并位于所述缓冲层上方的沟道层、以及接触所述沟道层并位于所述沟道层上方的势垒层,每个所述金属接触开口都具有位于所述沟道层的顶表面上方并与所述沟道层的顶表面间隔开的第一底表面;以及
利用第二气体组合蚀刻所述层状结构,从而加深每个金属接触开口的所述第一底表面一距离到达第二底表面,所述第二底表面位于所述第一底表面下方,所述第二底表面位于所述沟道层的所述顶表面上方并与所述沟道层的所述顶表面间隔开,其中所述第二气体组合比所述第一气体组合蚀刻更多的所述势垒层,并且其中所述第一气体组合也蚀刻通过接触所述势垒层并位于所述势垒层上方的覆盖层,并且蚀刻通过接触所述覆盖层并位于所述覆盖层上方的钝化层,所述覆盖层包含GaN,所述钝化层包含氮化硅。
2.一种形成高电子迁移率晶体管的方法,其包括:
利用第一气体组合蚀刻层状结构达一时间段从而形成数个金属接触开口,所述层状结构包括接触衬底并位于所述衬底上方的缓冲层、接触所述缓冲层并位于所述缓冲层上方的沟道层、以及接触所述沟道层并位于所述沟道层上方的势垒层,每个所述金属接触开口都具有位于所述沟道层的顶表面上方并与所述沟道层的顶表面间隔开的第一底表面;以及
利用第二气体组合蚀刻所述层状结构,从而加深每个金属接触开口的所述第一底表面一距离到达第二底表面,所述第二底表面位于所述第一底表面下方,所述第二底表面位于所述沟道层的所述顶表面上方并与所述沟道层的所述顶表面间隔开,其中所述时间段包括第一时间子段和后续的第二时间子段,并且其中所述第一气体组合蚀刻所述势垒层到一深度达所述第一时间子段,并且在所述第一时间子段后在所述第二时间子段期间基本不再加深;
其中利用所述第二气体组合蚀刻所述势垒层达预定时间段,其中所述第一气体组合包括三氯化硼即BCl3和六氟化硫即SF6,其中所述第二气体组合包含三氯化硼即BCl3和氯即Cl2。
3.根据权利要求1所述的方法,其进一步包括沉积接触每个第二底表面并填充所述金属接触开口的金属接触层。
4.根据权利要求3所述的方法,其进一步包括平面化所述金属接触层以形成位于所述数个金属接触开口中并接触所述势垒层的数个间隔的金属接触。
5.一种形成高电子迁移率晶体管的方法,其包括:
使用包含三氯化硼即BCl3和六氟化硫即SF6的气体组合蚀刻氮化镓即GaN材料的势垒层从而形成数个金属接触开口,所述势垒层被形成在沟道层上,每个所述金属接触开口具有位于所述沟道层的顶表面上方并与所述沟道层的顶表面间隔开的底表面;以及
使用包含三氯化硼即BCl3和氯即Cl2的气体组合蚀刻由所述金属接触开口暴露的所述氮化镓即GaN材料的势垒层,从而加深每个金属接触开口到第二底表面,所述第二底表面位于所述沟道层的所述顶表面上方并与所述沟道层的所述顶表面间隔开。
6.根据权利要求5所述的方法,其进一步包括沉积接触每个第二底表面并填充所述金属接触开口的金属接触层。
7.根据权利要求6所述的方法,其进一步包括平面化所述金属接触层以形成位于所述数个金属接触开口中并接触所述势垒层的数个间隔的金属接触。
8.根据权利要求5所述的方法,其中包含BCl3和Cl2的所述气体组合比包含BCl3和SF6的气体组合蚀刻更多的所述势垒层。
9.根据权利要求5所述的方法,其中包含BCl3和SF6的气体组合蚀刻通过接触所述势垒层并位于所述势垒层上方的覆盖层,并且蚀刻通过接触所述覆盖层并位于所述覆盖层上方的钝化层。
10.根据权利要求9所述的方法,其中所述覆盖层包括GaN,并且所述钝化层包括氮化硅。
11.根据权利要求5所述的方法,其中包含BCl3和SF6的所述气体组合也蚀刻通过接触所述势垒层并位于所述势垒层上方的钝化层。
12.根据权利要求11所述的方法,其中所述钝化层包含氮化硅。
13.根据权利要求12所述的方法,其中所述沟道层进一步包含GaN。
14.根据权利要求5所述的方法,其中所述氮化镓即GaN材料的势垒层是AlGaN。
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2014
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US9443737B2 (en) | 2016-09-13 |
US9818839B2 (en) | 2017-11-14 |
US20140302672A1 (en) | 2014-10-09 |
US20180033865A1 (en) | 2018-02-01 |
US20190288090A1 (en) | 2019-09-19 |
CN105324846A (zh) | 2016-02-10 |
US10374057B2 (en) | 2019-08-06 |
WO2014165638A1 (en) | 2014-10-09 |
US10707323B2 (en) | 2020-07-07 |
US20160351685A1 (en) | 2016-12-01 |
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