CN105261689B - 全串联的高功率密度led芯片封装结构 - Google Patents

全串联的高功率密度led芯片封装结构 Download PDF

Info

Publication number
CN105261689B
CN105261689B CN201510693969.6A CN201510693969A CN105261689B CN 105261689 B CN105261689 B CN 105261689B CN 201510693969 A CN201510693969 A CN 201510693969A CN 105261689 B CN105261689 B CN 105261689B
Authority
CN
China
Prior art keywords
led
chip
insulation
chip package
outside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510693969.6A
Other languages
English (en)
Other versions
CN105261689A (zh
Inventor
张善端
韩秋漪
荆忠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHANGHAI MACHINE OPTOELECTRONIC TECHNOLOGY Co Ltd
Fudan University
Original Assignee
SHANGHAI MACHINE OPTOELECTRONIC TECHNOLOGY Co Ltd
Fudan University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHANGHAI MACHINE OPTOELECTRONIC TECHNOLOGY Co Ltd, Fudan University filed Critical SHANGHAI MACHINE OPTOELECTRONIC TECHNOLOGY Co Ltd
Priority to CN201510693969.6A priority Critical patent/CN105261689B/zh
Publication of CN105261689A publication Critical patent/CN105261689A/zh
Application granted granted Critical
Publication of CN105261689B publication Critical patent/CN105261689B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

本发明属于半导体照明器件技术领域,具体为全串联的高功率密度LED芯片封装结构。所述封装结构包含N×M个单芯片封装器件,排列成N行M列结构,外部用绝缘框箍紧;每个单芯片封装器件的正极导电柱与相邻封装基座的负极金属管电连接,形成全串联封装结构。所述单芯片封装器件的结构,中间为方形导电柱,方形导电柱外层是内绝缘导热层;内绝缘导热层外面是金属管。LED芯片底部的P极与所述器件的方形导电柱或导电板连接;LED芯片顶部N极的焊盘与金属管或金属环电连接。本发明的封装结构,将所有高功率密度LED芯片全部串联,在实现十千瓦级大功率LED器件封装的同时,可以减小电源导线的线径,避免超大电流对线路安全性造成隐患。

Description

全串联的高功率密度LED芯片封装结构
技术领域
本发明属于半导体照明器件技术领域,具体涉及全串联的高功率密度LED芯片封装结构。
背景技术
随着半导体照明技术的快速发展,LED封装技术得到了长足的进步,大功率LED封装器件也逐渐推广应用于各种普通照明和特殊照明应用领域。众多工业应用领域对高功率密度光输出的需求,推动了大功率或者高功率密度LED封装技术的不断研究和开发。
CN 201410291560.7和CN 201410176671.3分别提出了正装和倒装结构芯片的集成封装结构,能够实现高功率密度的LED器件。但是这两种结构中,封装的LED芯片的正、负极都进行了大量并联,单个模组的电流取决于并联的芯片数量,形成了低电压、高电流的封装模组。随着单颗芯片功率的不断增大,芯片电流已达到了十几安培甚至更高,因此导致模组电流非常大,对接电线路的过流量提出了很高的要求。
发明内容
本发明的目的是提供一种可靠性好的全串联的高功率密度LED芯片封装结构,在实现十千瓦级大功率LED器件封装的同时,避免超大电流对线路安全性造成隐患。
本发明提供的全串联的高功率密度LED芯片封装结构,包含N×M个单LED芯片封装器件,N≥1,M≥1,排列成N行M列结构,外部用绝缘框箍紧;每个单芯片封装器件的正极导电柱与相邻封装基座的负极金属管电连接,形成全串联封装结构。
本发明中,所述单芯片封装器件的结构类似于方形同轴电缆,中间为方形导电柱,方形导电柱外层是内绝缘导热层;内绝缘导热层外面是方形金属管;相邻器件的方形金属管之间采用外绝缘导热层进行电气绝缘。
本发明中,所述单芯片封装器件中间为方形导电板,方形导电板外层是内绝缘导热层;绝缘导热层外面是方形金属环;相邻器件的方形金属环之间采用外绝缘导热层进行电气绝缘。
本发明中,LED芯片底部的P极与所述器件的方形导电柱或导电板连接,采用共晶焊的方式;LED芯片顶部N极的焊盘与金属管或金属环电连接,可以采用金线焊接或通过金属箔片共晶焊接。
本发明中,所述的N×M个单芯片封装器件用绝缘框箍紧后,底部抛光,用导热绝缘胶与导电导热绝缘板粘接,形成可通过超大电流的封装基板。
本发明的封装结构,将所有高功率密度LED芯片全部串联,在实现十千瓦级大功率LED器件封装的同时,可以减小电源导线的线径,避免超大电流对线路安全性造成隐患。
附图说明
图1为本发明的全串联的高功率密度LED芯片封装结构实施例的示意图。
图2为本发明的全串联的高功率密度LED芯片封装结构的侧视图。
图3为本发明的全串联的高功率密度LED芯片封装结构的俯视图。
图中标号:1~3—单芯片封装器件;4—绝缘框;11、21、31—方形铜柱;12、22、32—内绝缘导热层;13、23、33—金属管;14、24、34—LED垂直结构芯片;15、25、35—共晶焊;16、26、36—金线;17、27、37—负极连接端;18、28、38—正极连接端;39—正极输入端;51、52—外绝缘层。
具体实施方式
以下结合附图和实施例,对本发明做进一步说明。所描述的实施例仅为本发明的部分实施例。基于本发明中的实施例而未作出创造性成果的其他所有实施例,都属于本发明的保护范围。
本发明的全串联的高功率密度LED芯片封装结构,包含1×3个单芯片封装器件1~3,外部有一个绝缘框4箍紧,如图1所示。单芯片封装器件1~3的结构如图2和图3所示,中间分别是方形铜柱11、21、31,外围分别依次包覆绝缘导热层12、22、32、金属管13、23、33。相邻的器件1和2、2和3之间采用外绝缘层51、52进行电气绝缘。铜柱11、21、31分别作为单芯片封装器件1~3的正极,金属管13、23、33分别作为负极。器件1~3上各排布一个面积为3×7 mm2的垂直结构LED芯片14、24、34。芯片底部P极分别与对应的铜柱11、21、31形成共晶焊15、25、35;顶部N极分别与对应的金属管13、23、33通过金线16、26、36连接。为了便于封装基座的串联,金属管13、23、33的一侧有突出的连接端17、27、37,另一侧则剖开露出中间铜柱的连接端18、28、38。连接端18与27、28与37之间采用共晶焊接,连接端38共晶焊一个突出的正极接口39,则三个封装器件实现串联,端口17是整个全串联封装结构的负极输入端,端口39是整个封装结构的正极输入端。该全串联高功率密度LED芯片封装结构的电压为15 V,电流75A,功率达到1125 W,可以用于TiO2光催化分解有机废气。

Claims (2)

1.全串联的高功率密度LED芯片封装结构,其特征在于:所述封装结构包含N×M个单芯片封装器件,N≥1,M≥1,排列成N行M列结构,外部用绝缘框箍紧;每个单芯片封装器件的正极导电柱与相邻封装基座的负极金属管电连接,形成全串联封装结构;
所述单芯片封装器件的结构类似于方形同轴电缆,中间为方形导电柱,方形导电柱外层是内绝缘导热层;绝缘导热层外面是方形金属管;相邻器件的金属管之间采用外绝缘导热层进行电气绝缘;或者:
所述单芯片封装器件中间为方形导电板,方形导电板外层是内绝缘导热层;内绝缘导热层外面是方形金属环;相邻器件的金属环之间采用外绝缘导热层进行电气绝缘;
所述的N×M个单芯片封装器件用绝缘箍紧后,底部抛光,用导热绝缘胶与导热绝缘板粘接,形成可通过超大电流的封装基板。
2.根据权利要求1所述的全串联的高功率密度LED芯片封装结构,其特征在于:LED芯片底部的P极与所述器件的方形导电柱或导电板连接,采用共晶焊的方式;LED芯片顶部N极的焊盘与金属管或金属环电连接,采用金线焊接或通过金属箔片共晶焊接。
CN201510693969.6A 2015-10-25 2015-10-25 全串联的高功率密度led芯片封装结构 Active CN105261689B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510693969.6A CN105261689B (zh) 2015-10-25 2015-10-25 全串联的高功率密度led芯片封装结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510693969.6A CN105261689B (zh) 2015-10-25 2015-10-25 全串联的高功率密度led芯片封装结构

Publications (2)

Publication Number Publication Date
CN105261689A CN105261689A (zh) 2016-01-20
CN105261689B true CN105261689B (zh) 2018-10-16

Family

ID=55101273

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510693969.6A Active CN105261689B (zh) 2015-10-25 2015-10-25 全串联的高功率密度led芯片封装结构

Country Status (1)

Country Link
CN (1) CN105261689B (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201359209Y (zh) * 2008-11-25 2009-12-09 董丽霞 平板式透镜一体化led光源
CN202434517U (zh) * 2011-10-26 2012-09-12 华夏光股份有限公司 发光二极管阵列
CN102751271A (zh) * 2011-04-19 2012-10-24 Lg伊诺特有限公司 发光器件阵列
CN205122630U (zh) * 2015-10-25 2016-03-30 复旦大学 全串联的高功率密度led芯片封装结构

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6578986B2 (en) * 2001-06-29 2003-06-17 Permlight Products, Inc. Modular mounting arrangement and method for light emitting diodes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201359209Y (zh) * 2008-11-25 2009-12-09 董丽霞 平板式透镜一体化led光源
CN102751271A (zh) * 2011-04-19 2012-10-24 Lg伊诺特有限公司 发光器件阵列
CN202434517U (zh) * 2011-10-26 2012-09-12 华夏光股份有限公司 发光二极管阵列
CN205122630U (zh) * 2015-10-25 2016-03-30 复旦大学 全串联的高功率密度led芯片封装结构

Also Published As

Publication number Publication date
CN105261689A (zh) 2016-01-20

Similar Documents

Publication Publication Date Title
CN103022022A (zh) 一种低寄生电感的igbt功率模块
CN204441334U (zh) 一种新型led器件
CN103532006A (zh) 一种半导体激光器
CN205122630U (zh) 全串联的高功率密度led芯片封装结构
CN105261689B (zh) 全串联的高功率密度led芯片封装结构
CN203983728U (zh) 一种采用铝基板封装的大功率半导体激光器
CN203733839U (zh) Cob光源模块
CN104979441B (zh) 一种led芯片及其制作方法及led显示装置
CN105305224B (zh) 一种采用铝基板封装的大功率半导体激光器及其封装方法
CN203351647U (zh) Led封装结构
CN104426050A (zh) 半导体激光二极管及其封装方法
CN203775045U (zh) 一种智能半导体功率模块
CN203895451U (zh) 大功率led封装结构
CN203260633U (zh) 不用焊线的led封装结构
CN202996833U (zh) 一种复合封装的igbt器件
CN205122582U (zh) Led正装芯片的高功率密度封装模组
CN102723420B (zh) 一种支架与led灯
CN206806325U (zh) 一种结构改良的串联式二极管
CN108231699B (zh) 具有多个晶粒结构的覆晶封装二极管元件
CN201994295U (zh) 一种高抗静电的led
CN204204851U (zh) Led多晶封装结构
CN206148429U (zh) 便于串联使用的大功率igbt模块
CN103280510A (zh) Led封装结构及其封装方法
CN103780102A (zh) 一种智能半导体功率模块
CN202796916U (zh) 一种塑封的非绝缘功率半导体模块

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant