CN203733839U - Cob光源模块 - Google Patents

Cob光源模块 Download PDF

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Publication number
CN203733839U
CN203733839U CN201420101009.7U CN201420101009U CN203733839U CN 203733839 U CN203733839 U CN 203733839U CN 201420101009 U CN201420101009 U CN 201420101009U CN 203733839 U CN203733839 U CN 203733839U
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China
Prior art keywords
led chip
light source
source module
cob light
line layer
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Expired - Fee Related
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CN201420101009.7U
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English (en)
Inventor
张铁钟
张硕
郭伦春
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Shenzhen Jiuzhou Optoelectronics Technology Co Ltd
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Shenzhen Jiuzhou Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Device Packages (AREA)

Abstract

本实用新型公开了一种COB光源模块，从上到下依次包括透光层、LED芯片和基板，所述基板的四周设有围栏，所述基板上设有线路层，所述LED芯片的正负电极位于LED芯片的同一侧面且朝向线路层，所述LED芯片的正负电极与所述线路层焊接。它是用金属层来代替金线将相邻LED芯片连接，增加了相邻LED芯片连接的可靠性高，延长了COB光源模块的使用寿命长。

Description

COB光源模块
技术领域：
本实用新型涉及一种COB光源模块。
背景技术：
LED有分立和集成两种封装形式。LED分立器件属于传统封装形式，广泛应用于各个相关的领域，经过近四十多年的发展，已形成一系列的主流产品形式。LED的COB模块属于个性化封装形式，主要为一些个性化案例的应用产品而设计和生产，目前还没有形成主流产品形式，其中使用成本是其中一大制约因素。为了降低LED的COB模块使用成本可以从增加LED的COB模块可靠性和耐用性等方面来改进。现有的COB光源模块（如图1所示），它包括由上至下依次设置的透光层12、LED芯片14及基板16，基板16上设有线路层15，基板16四周设有围坝胶11，利用银胶（绝缘胶）将芯片14与基板16粘在一起，利用金属线13将相邻芯片14相连并连接到线路层15，透光层12将LED芯片14封装于基板16上，由于是用金属线13将相邻芯片14相连并连接到线路层15，当受到外力作用或透光层内产生的应力时，金属线13容易出现断线、死灯等问题，其可靠性较低。
发明内容：
本实用新型的目的是解决现有技术不足，提供一种结构简单、可靠性高，使用寿命长的COB光源模块。
本实用新型的技术方案为：
COB光源模块从上到下依次包括透光层、LED芯片和基板，基板的四周设有围栏，基板上设有线路层，LED芯片的正负电极位于LED芯片的同一侧面且朝向线路层，LED芯片的正负电极与线路层焊接。
其中，LED芯片的正负电极分别与线路层之间设有金属层，LED芯片的正负电极通过金属层与线路层焊接。
其中，金属层为焊锡层或焊金层或焊银层。
其中，透光层设于围栏内侧。
其中，LED芯片阵列在线路层上。
其中，围栏形成的光源区为圆形或方形。
综合上述方案可知，本实用新型有益效果是：LED芯片的正负电极直接焊接在线路层上，增加了COB光源模块的可靠性和使用寿命，同时不需要利用银胶（绝缘胶）将LED芯片与基板粘在一起，减少了工艺步骤。
附图说明
图1为现有COB光源模块的主视图；
图2为本实用新型COB光源模块的主视图；
图3为本实用新型实施例一的结构示意图；
图4为本实用新型实施例二的结构示意图；
图5为本实用新型实施例三的结构示意图。
具体实施方式：
为阐述本实用新型的思想及目的，下面将结合附图和具体实施例对本实用新型作进一步的说明。
第一实施例，如图2和图3所示，COB光源模块从上到下依次包括透光层22、LED芯片24和基板26。基板26的四周设有围栏21，围栏21内侧设有透光层22，透光层22可采用硅胶、荧光胶或两者结合的混合材质制成，在基板26上还设有线路层25。LED芯片24的正负电极位于LED芯片24的同一侧面且朝向线路层25，LED芯片24的正负电极与线路层25焊接，这种焊接是分别在LED芯片24的正负电极与线路层25之间设置金属层23，通过回流焊或高温加热的方式将金属层23的融化，之后将LED芯片24的正负电极分别与线路层25固定连接，金属层23主要是为了将LED芯片24的正负电极分别与线路层25固定连接和起到导电作用。在本实施例中,金属层24可以是焊锡层或焊金层或焊银层，或者是其它能够导电和固定LED芯片24的金属层或金属合金层。LED芯片24在线路层上采用矩形阵列方式排布。其中，LED芯片24采用并联之后的串联结构，并且并联数量与串联数量相同或相近，比如五个LED芯片24并联之后，再将四组这个的并联LED芯片24串联在一起，5X4=20个LED芯片24，又比如，有6X6=36个LED芯片。这样的并联之后再串联的结构，可以优化电源电路，降低成本。围栏21将矩形阵列的LED芯片24围成一圆形源区。
第二实施例，如图4所示，本实施例与第一实施例区别在于：围栏21将矩形阵列的LED芯片24围成一方形光源区。
第三实施例，如图5所示，本实施例与第一实施例区别在于：LED芯片24在线路层上采用环形阵列方式排布，围栏21将环形阵列的LED芯片24围成一圆形源区。
第四实施例，本实施例与第一实施例区别在于：是通过融化LED芯片24的正负电极上的金属将LED芯片24的正负电极与线路层25连接起来。
以上是对本实用新型所提供的COB光源模块进行了详细的介绍，本文中应用了具体个例对本实用新型的结构原理及实施方式进行了阐述，以上实施例只是用于帮助理解本实用新型的方法及其核心思想；同时，对于本领域的一般技术人员，依据本实用新型的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本实用新型的限制。

Claims (6)

1.一种COB光源模块，从上到下依次包括透光层、LED芯片和基板，所述基板的四周设有围栏，其特征在于，所述基板上设有线路层，所述LED芯片的正负电极位于LED芯片的同一侧面且朝向线路层，所述LED芯片的正负电极与所述线路层焊接。
2.如权利要求1所述的COB光源模块，其特征在于，所述LED芯片的正负电极分别与线路层之间设有金属层，LED芯片的正负电极通过金属层与线路层焊接。
3.如权利要求2所述的COB光源模块，其特征在于，所述金属层为焊锡层或焊金层或焊银层。
4.如权利要求3所述的COB光源模块，其特征在于，所述透光层设于所述围栏内侧。
5.如权利要求4所述的COB光源模块，其特征在于，所述LED芯片阵列在所述线路层上。
6.如权利要求5所述的COB光源模块，其特征在于，所述围栏形成的光源区为圆形或方形。
CN201420101009.7U 2014-03-06 2014-03-06 Cob光源模块 Expired - Fee Related CN203733839U (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105489734A (zh) * 2015-04-10 2016-04-13 郭垣成 一种免绑线的cob生产工艺
CN105489736A (zh) * 2015-12-23 2016-04-13 张航 基于黄颜色陶瓷封装的cob、led灯丝及led灯
CN111628063A (zh) * 2020-03-04 2020-09-04 深圳雷曼光电科技股份有限公司 一种Micro-LED的固晶方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105489734A (zh) * 2015-04-10 2016-04-13 郭垣成 一种免绑线的cob生产工艺
CN105489736A (zh) * 2015-12-23 2016-04-13 张航 基于黄颜色陶瓷封装的cob、led灯丝及led灯
CN111628063A (zh) * 2020-03-04 2020-09-04 深圳雷曼光电科技股份有限公司 一种Micro-LED的固晶方法

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