CN204257696U - 一种强散热型cob封装led - Google Patents

一种强散热型cob封装led Download PDF

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Publication number
CN204257696U
CN204257696U CN201420724162.5U CN201420724162U CN204257696U CN 204257696 U CN204257696 U CN 204257696U CN 201420724162 U CN201420724162 U CN 201420724162U CN 204257696 U CN204257696 U CN 204257696U
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CN
China
Prior art keywords
led chip
box dam
led
dissipated
copper base
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Expired - Fee Related
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CN201420724162.5U
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English (en)
Inventor
徐珍宝
陈亮
沈洋
周占春
苏玲爱
金尚忠
杨凯
石岩
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China Jiliang University
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China Jiliang University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Led Device Packages (AREA)

Abstract

本实用新型涉及LED技术领域,是一种LED封装,其包括围坝、LED芯片、铜基板、导线通孔及半导体制冷片等。所述的围坝由焊盘及绝缘层组成,LED芯片安装在围坝之间的凹槽内。为了保证LED在较低的温度环境下工作,本实用新型在铜基板下安装有半导体制冷片。本实用新型通过安装半导体制冷片,降低了LED芯片工作时的温度,从而提高了LED芯片的发光效率,延长了LED芯片的工作寿命,并通过在围坝上设置长条形的焊盘,降低了焊接金线的操作难度。

Description

一种强散热型COB封装LED
技术领域
本实用新型属于LED技术领域,涉及到一种强散热型COB封装LED。
背景技术
目前,大多数LED光源失效之所以失效,很大一部分原因是其散热效果不好。在LED芯片工作的时候,在发光之余,它也会产生很多热量。如果这些热量不能及时的散发出去,就会加速LED芯片上荧光粉、电极的老化,最终导致LED芯片的发光效率降低、色温偏移严重、使用寿命缩短等不良后果。另一方面,现今存在围坝结构的COB封装LED大多存在金线焊接较难的问题,致使此类LED光源具有发光面积大的特点,这给LED光源的第二次光学设计带来了困难。
发明内容
为了解决上述问题,本实用新型提出了一种强散热型的COB封装LED芯片。
本实用新型所涉及到的一种强散热型COB封装LED主要包括围坝、LED芯片、铜基板、半导体制冷片等结构。
所述围坝由焊盘和绝缘层组成,绝缘层用于隔离铜基板和焊盘。围坝等距离地排列在铜基板上,一方面为LED芯片提供焊盘,另一方面为荧光胶提供固定结构,保证胶水成型有较好的一致性。
所述LED芯片安装在围坝之间的凹槽内,且沿围坝长度的方向一字排列,LED芯片的金线连接到其两侧围坝的焊盘上,同一凹槽内的LED芯片以并联的方式相连,相邻凹槽内的LED芯片以串联的方式相连,最终形成面光源。
所述半导体制冷片安装在铜基板的下方,并且制冷面紧贴铜基板,通电时以串联的方式与LED芯片相连。当LED芯片工作时,由于半导体制冷片制冷的作用,会使得铜基板的温度处于较低的状态,进而保证了LED芯片在较低温度的环境下工作。
附图说明
图1为本实用新型的俯视图。
图2为本实用新型的侧视图。
具体实施方式
如图2所示,本LED封装包括围坝、LED芯片2、铜基板3、金线4、导线通孔5、导线引脚焊点、半导体制冷片9及导线10。所述的围坝包括焊盘1及绝缘层8,其中绝缘层8分布在焊盘1及铜基板3之间。所述的导线引脚焊点包括圆形焊盘6及绝缘层7,其中绝缘层7分布在圆形焊盘6及铜基板3之间。
如图1所示,所述围坝呈长条形,等距离地分布在铜基板3上,两者通过银胶粘合;所述LED芯片2均匀地分布在围坝之间的凹槽内,并沿着围坝的长度方向排列,LED芯片2与铜基板3之间通过银胶粘合;所述金线4用于连接LED芯片2与焊盘1,致使在同一凹槽内的LED芯片2以并联的方式相连,在相邻凹槽内的LED芯片2以串联的方式连接。
如图2所示,所述半导体制冷片9安装在铜基板3的下方,制冷面紧贴铜基板3,两者通过导热硅胶粘合,半导体制冷片9的通电引脚通过所述导线10穿过导线通孔5后连接到圆形焊盘6上;在所述圆形焊盘6中,靠近围坝的焊盘通过金线4与其相邻的围坝相连,以保证半导体制冷片9以串联的方式与LED芯片2相连。

Claims (5)

1.一种强散热型COB封装LED,其特征在于包括围坝、半导体制冷片、铜基板、LED芯片等结构。
2.根据权利要求1所述的一种强散热型COB封装LED,其特征在于所述围坝由焊盘及绝缘层组成,并通过银胶粘合在铜基板上。
3.根据权利要求1所述的一种强散热型COB封装LED,其特征在于所述半导体制冷片安装在铜基板下方,并以制冷面紧贴铜基板,两者由导热硅胶粘合。
4.根据权利要求1所述的一种强散热型COB封装LED,其特征在于所述半导体制冷片以串联的方式与LED芯片连接。
5.根据权利要求1所述的一种强散热型COB封装LED,其特征在于所述LED芯片均匀地分布在围坝之间的凹槽内,按照围坝长度的方向排列,并且在同一凹槽内的LED芯片以并联的方式连接,在相邻凹槽内的LED芯片以串联的方式连接。
CN201420724162.5U 2014-11-27 2014-11-27 一种强散热型cob封装led Expired - Fee Related CN204257696U (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104810458A (zh) * 2015-05-04 2015-07-29 华东师范大学 用于汽车前照灯的led远近光一体的cob封装工艺
CN113491574A (zh) * 2021-06-30 2021-10-12 深圳可思美科技有限公司 一种led发光脱毛装置
CN113571506A (zh) * 2021-09-24 2021-10-29 至芯半导体(杭州)有限公司 一种紫外发光二极管封装模组结构

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104810458A (zh) * 2015-05-04 2015-07-29 华东师范大学 用于汽车前照灯的led远近光一体的cob封装工艺
CN104810458B (zh) * 2015-05-04 2017-05-17 华东师范大学 用于汽车前照灯的led远近光一体的cob封装工艺
CN113491574A (zh) * 2021-06-30 2021-10-12 深圳可思美科技有限公司 一种led发光脱毛装置
CN113571506A (zh) * 2021-09-24 2021-10-29 至芯半导体(杭州)有限公司 一种紫外发光二极管封装模组结构
CN113571506B (zh) * 2021-09-24 2021-11-30 至芯半导体(杭州)有限公司 一种紫外发光二极管封装模组结构

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Granted publication date: 20150408

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