CN104810458A - 用于汽车前照灯的led远近光一体的cob封装工艺 - Google Patents
用于汽车前照灯的led远近光一体的cob封装工艺 Download PDFInfo
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Abstract
本发明涉及汽车配件技术领域,具体地说是一种用于汽车前照灯的LED远近光一体的COB封装工艺。具体步骤如下:(1)采用高温熔融的方法将铜浆料或铜箔层烧结或镀到基板的正面及背面;(2)在基板的正面,采用共晶焊接将LED芯片焊接到铜箔层上;(3)在基板的正面,采用金线打线的工艺,将LED芯片通过金膜层与铜箔层连接;(4)采用模具法或者点胶工艺,利用围胶将每组LED芯片进行阻隔;(5)采用模板喷涂法或者微点胶工艺,在阻隔后的LED芯片的表面直接涂布荧光粉膜层;(6)将经过荧光粉涂布后的LED芯片上覆盖透明或者含荧光粉的硅胶。同现有技术相比,本发明中通过非透明反光围胶和垂直芯片相结合,保证光源发光面的尺寸与位置,控制出光的均匀性。
Description
技术领域
本发明涉及汽车配件技术领域,具体地说是一种用于汽车前照灯的LED远近光一体的COB封装工艺。
背景技术
车载LED已广泛应用于背光照明、车内装饰、尾灯、刹车灯、转向灯等小灯领域,满足了消费者个性化追求、汽车厂家市场卖点、政府推动节能、环保经济等多重需求。LED车灯市场规模从2007年的6.9亿美元快速增长到2011年的12亿美元,年平均增长率达到13%,市场渗透率8%。目前,高位刹车灯、尾灯和转向灯已经非常普及。但是,对于LED汽车前照灯虽然2009年就已经有报道称我国的全LED汽车前照灯研制成功,但是由于技术难度,一直未在汽车上得到正式应用。自2012年奥迪A8全面采用LED 灯前照灯并投放市场以来,进口的LED前照灯在雷克萨斯、奔驰等品牌的高端车上陆续应用,但是由于其价格和应用空间性能等发面的问题,一直无法得到汽车界的广泛推广。
随着中国汽车产业的快速发展,国家发改委《产业结构调整指导目录》将“LED前照灯”列为鼓励类的独立项目,国家标准委员会也制订并公布了全新的“汽车用LED前照灯”国家标准GB25991-2010,LED前照灯将很快得到推广应用。
目前,开发的LED前照灯主要采用支架型大功率LED颗粒、贴片LED(SMD)和COBLED模块三种,实际应用安装的主要是大功率LED颗粒和贴片LED两种模式,这两种方式存在最大的问题就是散热。汽车前照灯是在一个高温、相对密闭的狭小环境内工作,热疏导问题是决定其工作性能的核心问题之一,由于两种模式均需要采用不同类型的支架,增加了LED芯片散热的阻力,不利于其在汽车前照灯中的应用。因此采用COB封装模式是汽车前照灯的必然趋向,本专利就针对COB封装结构,提供了一种高效率的LED汽车前照灯专用光源的封装工艺。
另外,不同于现有LED汽车大灯技术中远光与近光分离的结构,本发明提供的封装工艺,将远近光灯集于一体,可替代传统光源的一体化控制模块,实现其在电动和混合动力车中的特殊应用。
发明内容
本发明为克服现有技术的不足,提供一种用于汽车前照灯的远近光一体LED光源的COB封装工艺,通过对关键结构和关键工艺步骤与参数的改进,相应的一方面可以提高光源的整体出光效率、散热性能,从而提高光源的工作性能和寿命。另一方面,控制模块的发光面的光强度分布,实现了远光与近光灯在同一个模块内实现功能,在汽车前照灯15度截止线等光斑要求的同时,压缩了车灯的物理空间和价格成本。
为实现上述目的,设计一种用于汽车前照灯的LED远近光一体的COB封装工艺,包括基板、铜箔层、LED芯片、荧光粉胶层,其特征在于:具体步骤如下:
(1) 铜箔层:采用高温熔融的方法将铜浆料或铜箔层烧结或镀到基板的正面及背面,基板背面的铜箔层为蜂窝状结构;
(2) 共晶焊接:在基板的正面,采用共晶焊接将LED芯片焊接到铜箔层上;
(3) 金线打线:在基板的正面,采用金线打线的工艺,将LED芯片通过金膜层与铜箔层连接,完成LED的串、并联连接,以2~3颗LED芯片为一组进行划分;
(4) 围胶阻隔:采用模具法或者点胶工艺,利用围胶将每组LED芯片进行阻隔;
(5) 荧光粉涂布:采用模板喷涂法或者微点胶工艺,在阻隔后的LED芯片的表面直接涂布荧光粉膜层,膜层的厚度为0.05~0.2mm;
(6) 硅胶填充:将经过荧光粉涂布后的LED芯片上覆盖透明或者含荧光粉的硅胶,直到整个LED芯片完全被透明硅胶覆盖完整为止。
所述的基板采用了具有双面覆铜镀金的高导热氮化铝基板或者掺杂的双面覆铜镀金氧化铝基板。
所述的LED芯片背面均有镀金层。
所述的围胶采用了混合有纳米TiO2、Al2O3和SiO2颗粒的耐温反光硅胶,围胶中纳米TiO2颗粒的重量百分比在10~50%,Al2O3颗粒重量百分比在1~20%,SiO2颗粒的重量百分比在3~25%,围胶的宽度在0.1~1mm,围胶的厚度在0.5~1.2mm。
所述的荧光粉中采用大颗粒的氮化物黄光荧光粉和量子点材料的混合粉末,氮化物黄光荧光粉的颗粒为15~25um,量子点材料主要采用不同尺寸的硒化镉或者硒化镉、硫化锌的核壳结构。
所述的荧光粉涂布采用微点胶工艺,具体工艺如下:
(1) 第一次点胶:先将颗粒在18~25um的氮化物黄光荧光粉与透明硅胶混合,氮化物黄光荧光粉的重量百分比比例含量为5~15%,通过微点胶工艺,在LED芯片表面涂覆荧光粉胶,稳定10分钟;
(2) 第二次点胶:用颗粒在8~18um的氮化物荧光粉和量子点材料与硅胶相混,其中氮化物黄光荧光粉的重量百分比比例含量为1~15%,量子点材料的重量含量为3~25%,在第一次点胶后的LED芯片表面再次涂覆。
本发明同现有技术相比,本发明中通过非透明反光围胶和垂直芯片相结合,这样一方面可以实现远近光一体化的功能,另一方面,可以控制荧光粉的涂覆形状,保证光源发光面的尺寸与位置,控制出光的均匀性。
荧光粉层的参杂和涂覆工艺可以提高了得光源的外出光效率,还能提高硅胶层的导热性能。
荧光粉层中加入量子点材料的作用:量子点材料使用寿命长,且量子点本身尺寸比可见光波长还小,光散射、折射及其他光损失的现象也相对减少。量子点材料在受到LED芯片发光的刺激,会根据量子点的直径大小,发出各种不同颜色的非常纯正的高质量单色光。本发明采用的硒化镉或者硒化镉/硫化锌的核壳量子点材料可以发出红光和绿光,从而弥补LED光谱中的缺憾,从而提高汽车前照灯用LED光源的显色指数和发光效率。
氮化铝基板背面的覆铜层和镀金层均为蜂窝状结构,可以使光源在与外部灯具基座相连时采用金锡共晶焊接作用,并在较大面积的共晶焊接中采用了蜂窝状结构,可以避免焊接中出现的微气泡,微气泡会成为LED散热的热阻,通过本发明的设计,大大改善了光源与灯具间的散热通道,有利于光源的整体散热。
附图说明
图1为基板剖面示意图。
图2为基板正面示意图。
图3为基板背面示意图。
图4为LED芯片布局示意图。
图5为实施例一结构示意图。
图6-图8为实施例二结构示意图。
图1至图6,1为基板,2为铜箔层,3为LED芯片,4为金线,5为蜂窝状的铜箔层,6为近光灯组合,7为远光灯组合,8为近光灯围胶,9为远光灯围胶。
具体实施方式
下面根据附图对本发明做进一步的说明。
(1) LED光源的结构:
如图1至图3所示,LED光源封装基板1采用了具有双面覆铜镀金的高导热氮化铝基板或掺杂的双面覆铜镀金氧化铝基板,基板正面和背面均是铜箔层2,镀金层厚度为10~150um。铜箔层2是通过高温熔融到氮化铝或氧化铝基板表面的,该工艺铜箔层2与基板1有更好的结合力,使得导热通道充分,基板1整体的导热性能好。基板1正面铜箔层2包含了LED芯片3共晶焊接焊盘和串并联回路的电路,基板1背面铜箔层2是具有蜂窝状的铜箔层5结构的焊盘,用于LED光源和汽车大灯灯具的连接。
根据LED芯片3的选择和串并联导电回路设计,基板1双面的覆铜层可以各自独立,或者通过微空实现正面和背面的导通连接。
汽车供电电压一般是12V(11-15V之间浮动),LED芯片数量以2~3颗为1个单位,通过串并联组合,实现远近光灯的功能。
(2) LED芯片固晶与连线步骤:
如图4所示,LED芯片4的布局主要分成以下几种组合:4颗近光灯和7颗远光灯的一体组合,5颗近光灯和9颗远光的组合,6颗近光灯和11颗远光灯的组合,分布方式如图4(a)(b)(c)所示。
图4所示的布局方式可以将COB模式封装的LED前照灯的光斑控制在相对集中的范围内,同时,又在范围内有较为均匀的光斑分布,避免出现照度不均匀的现象。
LED照明光源封装一般主要采用水平电极结构、反转电极结构和垂直电极结构的LED芯片。水平电极结构的LED芯片较厚,因此LED芯片侧面会出光,侧面出光大约占到总出光的40%;另外蓝宝石的热导率较低,因此水平电极结构的LED芯片热阻较大。反转电极结构的LED芯片结构与水平电极结构的LED芯片类似,只是将LED芯片倒扣在封装基板上,虽然热阻稍小,但是由于两个电极通过贴片的方式与基板形成电连接,那么对于阵列形式的LED封装,其封装基板的布线将更加复杂。另外仍然存在侧面出光的问题。垂直电极结构的LED芯片与前两种LED芯片有着较大的区别,衬底多采用高热导率非透明材料,因此芯片侧面出光可以忽略不计,光束更加集中,有利于提高LED封装的亮度。另外由于电流在垂直方向传导,没有前两种芯片中的横向传导,不会出现电流聚集效应。目前国外大的芯片厂商主要生产垂直电极结构的LED。
针对以上问题,本发明通过以下途径解决了芯片的应用问题。
本发明采用了垂直电极和平面电极两种结构的LED芯片3。针对LED芯片热阻大的问题,LED芯片3背面均有镀金层,作为金锡共晶焊接层。对于平面结构芯片,该镀金层可以减少热阻,为芯片提供更好的散热通道;对于垂直结构芯片,该金层既是焊接层,也是芯片的电极。
为了保证芯片的散热性能,采用了金锡共晶焊接,该工艺是所有固晶工艺中热阻最小的工艺。 在完成固晶工艺后,通过金线4打线工艺,完成了LED芯片3的串、并联连接,LED 以2~3颗为组进行分组连接。
(3) 荧光粉填充步骤:
在封装的过程中,在涂布荧光粉层之前,制备了具有反光作用的围胶。针对平面LED芯片,针对LED芯片侧面出光问题,为了防止远近光灯之间的光干扰,在远光灯和近光灯之间采用非透明的反光胶形成阻隔层,如图4(a)中的近光灯围胶所示。围胶可以采用模具法或者点胶工艺形成。
围胶采用了混合有纳米TiO2、Al2O3和SiO2颗粒的耐温反光硅胶,围胶中纳米TiO2颗粒的重量比控制在10~50%,有助于平行光的反射,从而提高整个光源的出光效率和均匀性;围胶中Al2O3颗粒重量比控制在1~20%,有利于增强围胶的耐温特性,从而提高LED光源在高温工作环境中的稳定性;围胶中SiO2颗粒的重量比控制在3~25%,从而提高围胶的塑性成形可控性,围胶的宽度控制在0.1~1mm,围胶的厚度控制在0.5~1.2mm。
LED芯片在涂布荧光粉层的步骤中,分别可采用模板喷涂法或点胶形成荧光胶层。喷涂法主要采用模板,在大功率LED芯片的表面直接涂布一层低厚度的荧光粉膜层,膜层的厚度为0.05mm~0.2mm,荧光粉层中采用大颗粒的氮化物黄光荧光粉和量子点材料的混合粉末。氮化物黄光荧光粉的颗粒为15~25um,量子点材料主要采用了不同尺寸的硒化镉或者硒化镉/硫化锌的核壳结构。芯片表面的荧光粉层涂布完成后,在围框内填充透明硅胶,是整个光源完全被透明硅胶覆盖完整为止。
在采用点胶发涂布荧光层的步骤中,为改进折射率对外出光效率的影响,本专利在荧光胶涂布过程中采用了多层涂布的工艺。先将颗粒在18~25um的氮化物黄光荧光粉与透明硅胶混合,氮化物黄光荧光粉的重量百分比比例含量为5~15%,通过微点胶工艺,在LED芯片表面涂覆荧光粉胶,稳定10分钟后进行二次涂覆,用颗粒在8~18um的氮化物荧光粉和量子点材料与硅胶相混,其中氮化物黄光荧光粉的重量百分比比例含量为1~15%,量子点材料的重量含量为3~25%,在第一次点胶后的LED芯片表面再次涂覆。
在汽车前照灯的封装中,一般都采用1W以上的大功率LED,对于大功率LED 由于表面积比较大,因此采用大颗粒荧光粉的激发效率和发光效率更高。但是如果在COB封装工艺中全部采用大颗粒荧光粉,一方面由于涂布面积大,荧光胶中的荧光粉极易发生沉淀,会在LED芯片表面和侧面出现不同的荧光粉密度,从而影响发光均匀性,包括光强均匀性、色温均匀性等问题,不利于LED光源与汽车灯具的装配。另一方面,大颗粒荧光粉在芯片表面的较多沉淀会有一定的挡光作用,从而降低LED光源的整体光效。因此,通过改进的二次点胶工艺,一方面可以在保证大颗粒LED荧光粉高效激发的情况下,避免挡光。另一方面,大颗粒荧光粉的局部少量点胶,可以减少芯片侧面大颗粒荧光粉的沉积,提高整个光源的出光均匀性。在上层荧光粉中添加量子点材料,可以逐步降低荧光胶的折射率,从而提高整灯的出光效率。
实施例1
如图5所示,远近光一体LED光源模块采用的是1.0mm厚度的氮化铝基板,基板的正面是具有电路功能铜箔层,铜箔层是通过高温烧结与氮化铝相结合,有较好的结合力,散热通道充分;基板的背面是成片的蜂窝状铜箔层,基板的正面和背面铜箔均有镀金层。
本光源中近光灯和远光灯的LED芯片数量分别是4颗和7颗。LED芯片采用了垂直电极结构的大功率芯片,LED芯片负极采用共晶焊工艺,固定于氮化铝基板正面电路中特定的位置,LED芯片的正极通过打线工艺,通过金线连接到基板正面的电路中,实现LED芯片的串、并联组合连接。
在透明耐温硅胶中,分别加入重量百分比比例为30%的纳米TiO2,5% 的Al2O3和3%的SiO2颗粒,采用模具法,在LED芯片周围形成一个封闭的围胶,围胶高度约为1.2mm,宽度为1mm。
先用模板喷涂法在LED芯片正面制备一层厚度约为10um的氮化物荧光粉层,荧光粉的颗粒尺寸较大,约为18~23um。然后用较小尺寸的氮化物荧光粉,颗粒在10~18um,和量子点材料,颗粒在10nm与硅胶相混合,其中氮化物荧光粉重量含量为3%,量子点材料的重量含量为4%,通过点胶工艺填充在围胶框内,待硅胶流平,送入低温烤箱缓慢升温至150度,烘烤50分钟后,自然冷却至室温,光源封装即完成。
实施例2
如图6至图8所示,远近光一体LED光源模块采用的是0.8mm厚度的氧化铝基板,基板的正面是具有电路功能铜箔层,铜箔层是通过高温烧结与氮化铝相结合,有较好的结合力,散热通道充分;基板的背面是成片的蜂窝状铜箔层,基板的正面和背面铜箔均有镀金层,基板正面和背面的铜箔通过微孔灌铜浆并烧结的工艺形成上下道统的通路。
本光源中近光灯和远光灯的LED芯片数量分别是5颗和9颗。LED芯片采用了平面电极结构的大功率芯片,芯片背面镀金,可通过共晶焊工艺,固定于氧化铝基板正面电路中特定的位置,芯片的正负电极通过打金线工艺,连接到基板正面的电路中,实现LED芯片的串、并联组合连接。
为了避免远近光灯的互相干扰,在近光灯周围制备围胶。在透明耐温硅胶中,分别加入重量百分比比例为40%的纳米TiO2,10%的Al2O3和15%的SiO2颗粒,采用点胶工艺,在5颗LED芯片周围先形成一个封闭的围胶,然后在另外4颗LED芯片周围也形成一个封闭的围胶,围胶高度约为1mm,宽度为0.8mm。
在涂布荧光粉的过程中,先用微点胶工艺,在芯片表面涂覆微量荧光粉胶, 荧光粉胶是粒径较大的氮化物黄光荧光粉,颗粒在20um,与透明硅胶混合,荧光粉的重量百分比比例含量为15%,待荧光胶稳定10分钟后,再进行第二次点胶,是荧光胶填充入全部围胶框内。该层采用了氮化物荧光粉,颗粒在15um,和量子点材料与硅胶相混,其中氮化物荧光粉重量含量为4%,量子点材料的重量含量为8%,待硅胶流平,送入低温烤箱缓慢升温至150度,烘烤50分钟后,自然冷却至室温,光源封装即完成。
Claims (6)
1.一种用于汽车前照灯的LED远近光一体的COB封装工艺,包括基板、铜箔层、LED芯片、荧光粉胶层,其特征在于:具体步骤如下:
(1)铜箔层:采用高温熔融的方法将铜浆料或铜箔层烧结或镀到基板的正面及背面,基板背面的铜箔层为蜂窝状结构;
(2)共晶焊接:在基板的正面,采用共晶焊接将LED芯片焊接到铜箔层上;
(3)金线打线:在基板的正面,采用金线打线的工艺,将LED芯片通过金膜层与铜箔层连接,完成LED的串、并联连接,以2~3颗LED芯片为一组进行划分;
(4)围胶阻隔:采用模具法或者点胶工艺,利用围胶将每组LED芯片进行阻隔;
(5)荧光粉涂布:采用模板喷涂法或者微点胶工艺,在阻隔后的LED芯片的表面直接涂布荧光粉膜层,膜层的厚度为0.05~0.2mm;
(6)硅胶填充:将经过荧光粉涂布后的LED芯片上覆盖透明或者含荧光粉的硅胶,直到整个LED芯片完全被透明硅胶覆盖完整为止。
2.根据权利要求1所述的用于汽车前照灯的LED远近光一体的COB封装工艺,其特征在于:所述的基板采用了具有双面覆铜镀金的高导热氮化铝基板或者掺杂的双面覆铜镀金氧化铝基板。
3.根据权利要求1所述的用于汽车前照灯的LED远近光一体的COB封装工艺,其特征在于:所述的LED芯片背面均有镀金层。
4.根据权利要求1所述的用于汽车前照灯的LED远近光一体的COB封装工艺,其特征在于:所述的围胶采用了混合有纳米TiO2、Al2O3和SiO2颗粒的耐温反光硅胶,围胶中纳米TiO2颗粒的重量百分比在10~50%,Al2O3颗粒重量百分比在1~20%,SiO2颗粒的重量百分比在3~25%,围胶的宽度在0.1~1mm,围胶的厚度在0.5~1.2mm。
5.根据权利要求1所述的用于汽车前照灯的LED远近光一体的COB封装工艺,其特征在于:所述的荧光粉中采用大颗粒的氮化物黄光荧光粉和量子点材料的混合粉末,氮化物黄光荧光粉的颗粒为15~25um,量子点材料主要采用不同尺寸的硒化镉或者硒化镉、硫化锌的核壳结构。
6.根据权利要求1所述的用于汽车前照灯的LED远近光一体的COB封装工艺,其特征在于:所述的荧光粉涂布采用微点胶工艺,具体工艺如下:
(1)第一次点胶:先将颗粒在18~25um的氮化物黄光荧光粉与透明硅胶混合,氮化物黄光荧光粉的重量百分比比例含量为5~15%,通过微点胶工艺,在LED芯片表面涂覆荧光粉胶,稳定10分钟;
(2)第二次点胶:用颗粒在8~18um的氮化物荧光粉和量子点材料与硅胶相混,其中氮化物黄光荧光粉的重量百分比比例含量为1~15%,量子点材料的重量含量为3~25%,在第一次点胶后的LED芯片表面再次涂覆。
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