CN103780102A - 一种智能半导体功率模块 - Google Patents
一种智能半导体功率模块 Download PDFInfo
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- CN103780102A CN103780102A CN201410033419.7A CN201410033419A CN103780102A CN 103780102 A CN103780102 A CN 103780102A CN 201410033419 A CN201410033419 A CN 201410033419A CN 103780102 A CN103780102 A CN 103780102A
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- 238000000429 assembly Methods 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 239000000919 ceramic Substances 0.000 claims description 16
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
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- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000011358 absorbing material Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 239000010431 corundum Substances 0.000 claims description 3
- 239000006071 cream Substances 0.000 claims description 3
- 150000002118 epoxides Chemical class 0.000 claims description 3
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000012782 phase change material Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract 4
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- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Power Conversion In General (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410033419.7A CN103780102B (zh) | 2014-01-24 | 2014-01-24 | 一种智能半导体功率模块 |
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CN201410033419.7A CN103780102B (zh) | 2014-01-24 | 2014-01-24 | 一种智能半导体功率模块 |
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CN103780102A true CN103780102A (zh) | 2014-05-07 |
CN103780102B CN103780102B (zh) | 2017-06-06 |
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CN201410033419.7A Active CN103780102B (zh) | 2014-01-24 | 2014-01-24 | 一种智能半导体功率模块 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019047144A1 (zh) * | 2017-09-08 | 2019-03-14 | 湖南中车时代电动汽车股份有限公司 | 一种电动汽车动力系统控制装置 |
WO2023098184A1 (zh) * | 2021-11-30 | 2023-06-08 | 北京卫星制造厂有限公司 | 一种igbt电气单元封装件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005183776A (ja) * | 2003-12-22 | 2005-07-07 | Fuji Electric Device Technology Co Ltd | 半導体パワーモジュール |
CN202142975U (zh) * | 2011-07-01 | 2012-02-08 | 江苏宏微科技有限公司 | 智能功率模块 |
CN102446910A (zh) * | 2011-12-28 | 2012-05-09 | 嘉兴斯达微电子有限公司 | 一种新型大功率模块 |
CN203775045U (zh) * | 2014-01-24 | 2014-08-13 | 嘉兴斯达微电子有限公司 | 一种智能半导体功率模块 |
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2014
- 2014-01-24 CN CN201410033419.7A patent/CN103780102B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005183776A (ja) * | 2003-12-22 | 2005-07-07 | Fuji Electric Device Technology Co Ltd | 半導体パワーモジュール |
CN202142975U (zh) * | 2011-07-01 | 2012-02-08 | 江苏宏微科技有限公司 | 智能功率模块 |
CN102446910A (zh) * | 2011-12-28 | 2012-05-09 | 嘉兴斯达微电子有限公司 | 一种新型大功率模块 |
CN203775045U (zh) * | 2014-01-24 | 2014-08-13 | 嘉兴斯达微电子有限公司 | 一种智能半导体功率模块 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019047144A1 (zh) * | 2017-09-08 | 2019-03-14 | 湖南中车时代电动汽车股份有限公司 | 一种电动汽车动力系统控制装置 |
WO2023098184A1 (zh) * | 2021-11-30 | 2023-06-08 | 北京卫星制造厂有限公司 | 一种igbt电气单元封装件 |
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Effective date of registration: 20171213 Address after: Jiaxing City, Zhejiang province 314006 Nanhu District Branch Road No. 988 Patentee after: STARPOWER SEMICONDUCTOR Ltd. Address before: Jiaxing City, Zhejiang province 314006 Ring Road No. 18 Sidalu Patentee before: JIAXING STARPOWER MICROELECTRONICS Co.,Ltd. |
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Address after: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: Star Semiconductor Co.,Ltd. Address before: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee before: STARPOWER SEMICONDUCTOR Ltd. |
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CP01 | Change in the name or title of a patent holder |