CN102446910A - 一种新型大功率模块 - Google Patents

一种新型大功率模块 Download PDF

Info

Publication number
CN102446910A
CN102446910A CN2011104473778A CN201110447377A CN102446910A CN 102446910 A CN102446910 A CN 102446910A CN 2011104473778 A CN2011104473778 A CN 2011104473778A CN 201110447377 A CN201110447377 A CN 201110447377A CN 102446910 A CN102446910 A CN 102446910A
Authority
CN
China
Prior art keywords
shell
power module
connecting element
load connecting
liner plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011104473778A
Other languages
English (en)
Inventor
钱峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIAXING STARPOWER MICROELECTRONICS CO Ltd
Original Assignee
JIAXING STARPOWER MICROELECTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIAXING STARPOWER MICROELECTRONICS CO Ltd filed Critical JIAXING STARPOWER MICROELECTRONICS CO Ltd
Priority to CN2011104473778A priority Critical patent/CN102446910A/zh
Publication of CN102446910A publication Critical patent/CN102446910A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明公开了一种新型大功率模块，包括基体和外壳，功率模块上设有负载连接元件、半导体芯片与衬板，负载连接元件直接与衬板连接；负载连接元件以及衬板设于基体的第一主体面上，在第一主体面对置的第二主体面上具有非金属层；外壳固定在基体上且与第一主体面贴合，负载连接元件上部穿过外壳的沟槽。本发明使信号精度得到提高，驱动保护电路趋于简单稳定。

Description

一种新型大功率模块
技术领域
本发明涉及一种新型大功率模块。
背景技术
 现有典型半导体功率模块内部信号连接和外壳封装方式如图1所示。内部信号连接方式会采用PCB板绕线的形式。
多个信号引架D与衬板真空回流焊接后，穿过引架定位孔直至其限位探针与PCB板底部接触后，使用电器焊料焊接固定。信号端子C穿过端子定位孔直至其限位探针与PCB板底部接触后，使用电器焊料焊接固定。该种连接方式从长期使用及测试中发现，其较长的信号回路会导致较大的阻抗、容抗及感抗，使得信号时效和数据精度较差，特别是栅极控制信号。通常会对驱动和保护电路及使用工况提出相对高的要求。从生产制造方面来看，由于零部件较多，手工成分大，从而增加了生产成本，降低了成品率。外壳封装方式通常采用壳座B与基体连接后，上盖A在壳座B的上表面沿预设轨道嵌入并固定。上盖A上有螺母型的镶嵌件用于功率端子与外部链接固定。这种方式优点在于壳座B安装方便，在无法保证壳座B的外形尺寸精度及功率端子的定位精度情况下，可以进行微调来实现安装。但其缺点明显，因为分成两个部件，导致外壳整体强度较差，密封不良，尺寸配合上会出现偏移等缺陷，并且壳座B中间需要有大量加强筋来固定，内部结构复杂。此外两个塑料件之间存在配合关系，对注塑磨具有较高要求，注塑成品率降低，使得该种方式经济性较差。 
发明内容
本发明的的目的是设计出一种新型大功率模块。
本发明要解决的问题：一是现有半导体功率模块内部信号连接使用信号引架和PCB板导致较大的阻抗、容抗及感抗，使得信号时效和数据精度较差；二是而现有的外壳封装方式导致外壳整体强度较差，密封不良，尺寸配合上会出现偏移等。
本发明的技术方案是：
本发明所述的大功率功率模块，包括基体和外壳，功率模块上设有负载连接元件、半导体芯片与衬板，负载连接元件直接与衬板连接；负载连接元件以及衬板设于基体的第一主体面上，在第一主体面对置的第二主体面上具有非金属层；外壳固定在基体上且与第一主体面贴合，负载连接元件上部穿过外壳的沟槽。
半导体芯片至少包括下面两种芯片的组合之一:整流管、绝缘栅双极晶体管、金属氧化物半导体场效应管、双极晶体管、结型场效应晶体管、肖特基二极管、半导体闸流管。
衬板包括绝缘陶瓷层和设于绝缘陶瓷层上层、下层的导热金属层；导热金属层融接在基体与衬板之间。
绝缘陶瓷层的材料选自刚玉氧化铝陶瓷、氮化铝陶瓷、氮化硅陶瓷中的一种；导热金属层的材料是一种铜合金。
外壳用工程塑料聚合物制成，工程塑料聚合物选自半芳香烃聚酰胺、热塑性聚苯硫醚中的一种。
负载连接元件包括功率连接元件和信号连接元件，功率连接元件上设有S型缓冲弯道。
本发明的优点是：一是不再使用信号引架和PCB板，信号端子的底部通过超声焊接的方式固定在信号衬板上，顶部穿过沟槽后折弯成形。由于超声波焊接属于原子结合力，焊接处强度仅次于材料本体强度，使得本发明在增加信号端子力学性能的前提下，大大缩短信号回路的距离，使得信号即时性和精度得到提高，驱动保护电路趋于简单稳定，应用场合更加宽广。此外，还减少了零部件数量，提高自动化程度，降低成本，提高成品率；二是使用整体式外壳。由于超声波焊接的功率端子定位精确，且成熟的塑料注塑工艺应用使得外壳上沟槽的尺寸与相对位置达到使用精度，负载链接器件穿过沟槽与外壳配合，外壳与基体通过螺纹紧固件链接固定。此种方式外壳整体强度显著提高，具有优良的密封性能及精确的尺寸配合。另外，壳体内部不需要加强筋，为功率芯片布局提供更多空间，整体热阻下降。制造上，单件成型成品率高，更经济。
所以本发明有较高的耐压与电流等级，较好的热性能和电气稳定性，耐压最大达到3300V，电流等级最高达到800A。
附图说明
图1为现有封装结构的功率模块。
图2为本发明封装结构的大功率模块。
图3为本发明的剖面结构示意图。
具体实施方式
下面结合附图及具体实施例对本发明作进一步的说明。
如图所示，本发明所述的大功率功率模块，包括基体14和外壳3，功率模块上设有负载连接元件、半导体芯片6与衬板15、信号衬板8。负载连接元件直接与衬板连接。外壳3与负载连接元件之间是一体的安装形式。负载连接元件以及衬板15、信号衬板8设于基体14的第一主体面12上。在第一主体面12对置的第二主体面13上具有非金属层，非金属层用于将热量传递到冷却结构上。所述基体14能够固定到所述冷却结构上。
所述外壳3通过孔定位固定在基体14上且与第一主体面12贴合。负载连接元件上部穿过外壳3的沟槽2。负载连接元件只能在外壳3与基体14所限定的空间内做垂直于第一主体面12且有限制的移动。
半导体芯片6至少包括下面两种芯片的组合之一:整流管、绝缘栅双极晶体管、金属氧化物半导体场效应管、双极晶体管、结型场效应晶体管、肖特基二极管、半导体闸流管。
衬板15包括绝缘陶瓷层和设于绝缘陶瓷层上层的导热金属层16、下层的导热金属层7。
采用真空回流焊接方式将导热金属层7融接在基体14与衬板15之间。该金属层7与基体14的材料之间有很好的润湿性能。
绝缘陶瓷层的材料选自刚玉氧化铝陶瓷、氮化铝陶瓷、氮化硅陶瓷中的一种；导热金属层7、16的材料是一种铜合金。
外壳3用工程塑料聚合物制成，工程塑料聚合物选自半芳香烃聚酰胺、热塑性聚苯硫醚中的一种。
负载连接元件包括功率连接元件1、功率连接元件4、信号连接元件5、信号连接元件8、信号连接元件11，功率连接元件1上设有S型缓冲弯道18。S型缓冲弯道18是为了确保在交变温度及受力场合下能保持其电气连接性能。功率连接元件1的底部为接触面9，信号连接元件11的底部为接触面17。
衬板15与基体14通过导热金属层7焊接后，不同材料分界面上的气孔占总焊接面积的比率小于3%。
负载连接元件与所述衬板之间采用超声波焊接方式连接，从而确保负载连接元件与衬板的垂直关系及其能准确插入所述外壳3的沟槽2。
半导体芯片6与衬板15之间的连接采用真空回流焊接方式，并且该焊接层的材料熔点高于金属层7。
半导体芯片之间，半导体芯片上表面与衬板15之间，信号连接元件5、信号连接元件8、信号连接元件11下导电层与信号衬板8之间采用铝线键合的方式实现电气连接。
键合铝线的材料选之如下：硅铝线、普通纯铝线、超纯退火铝线。

Claims (6)

1.一种大功率模块，包括基体和外壳，其特征在于功率模块上设有负载连接元件、半导体芯片与衬板，负载连接元件直接与衬板连接；负载连接元件以及衬板设于基体的第一主体面上，在第一主体面对置的第二主体面上具有非金属层；外壳固定在基体上且与第一主体面贴合，负载连接元件上部穿过外壳的沟槽。
2..根据权利要求1所述的大功率模块，其特征在于半导体芯片至少包括下面两种芯片的组合之一:整流管、绝缘栅双极晶体管、金属氧化物半导体场效应管、双极晶体管、结型场效应晶体管、肖特基二极管、半导体闸流管。
3.根据权利要求1所述的大功率模块，其特征在于衬板包括绝缘陶瓷层和设于绝缘陶瓷层上层、下层的导热金属层；导热金属层融接在基体与衬板之间。
4.根据权利要求3所述的大功率模块，其特征在于绝缘陶瓷层的材料选自刚玉氧化铝陶瓷、氮化铝陶瓷、氮化硅陶瓷中的一种；导热金属层的材料是一种铜合金。
5.根据权利要求1所述的大功率模块，其特征在于外壳用工程塑料聚合物制成，工程塑料聚合物选自半芳香烃聚酰胺、热塑性聚苯硫醚中的一种。
6.根据权利要求1所述的大功率模块，其特征在于负载连接元件包括功率连接元件和信号连接元件，功率连接元件上设有S型缓冲弯道。
CN2011104473778A 2011-12-28 2011-12-28 一种新型大功率模块 Pending CN102446910A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011104473778A CN102446910A (zh) 2011-12-28 2011-12-28 一种新型大功率模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011104473778A CN102446910A (zh) 2011-12-28 2011-12-28 一种新型大功率模块

Publications (1)

Publication Number Publication Date
CN102446910A true CN102446910A (zh) 2012-05-09

Family

ID=46009266

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011104473778A Pending CN102446910A (zh) 2011-12-28 2011-12-28 一种新型大功率模块

Country Status (1)

Country Link
CN (1) CN102446910A (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103779342A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种功率半导体模块
CN103780102A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种智能半导体功率模块
CN103779344A (zh) * 2014-01-25 2014-05-07 嘉兴斯达半导体股份有限公司 一种功率模块封装结构
CN105374760A (zh) * 2014-08-21 2016-03-02 英飞凌科技股份有限公司 半导体模块、用于抓取、移动和电测试半导体模块的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6396125B1 (en) * 1999-08-06 2002-05-28 Fuji Electric Co., Ltd. Semiconductor device
CN101304010A (zh) * 2008-06-20 2008-11-12 南京银茂微电子制造有限公司 一种薄型功率模块
CN102064160A (zh) * 2010-11-11 2011-05-18 嘉兴斯达微电子有限公司 一种包含特殊功率端子的功率模块
CN202434518U (zh) * 2011-12-28 2012-09-12 嘉兴斯达微电子有限公司 一种新型大功率模块

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6396125B1 (en) * 1999-08-06 2002-05-28 Fuji Electric Co., Ltd. Semiconductor device
CN101304010A (zh) * 2008-06-20 2008-11-12 南京银茂微电子制造有限公司 一种薄型功率模块
CN102064160A (zh) * 2010-11-11 2011-05-18 嘉兴斯达微电子有限公司 一种包含特殊功率端子的功率模块
CN202434518U (zh) * 2011-12-28 2012-09-12 嘉兴斯达微电子有限公司 一种新型大功率模块

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103779342A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种功率半导体模块
CN103780102A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种智能半导体功率模块
CN103780102B (zh) * 2014-01-24 2017-06-06 嘉兴斯达微电子有限公司 一种智能半导体功率模块
CN103779344A (zh) * 2014-01-25 2014-05-07 嘉兴斯达半导体股份有限公司 一种功率模块封装结构
CN103779344B (zh) * 2014-01-25 2017-02-08 嘉兴斯达半导体股份有限公司 一种功率模块封装结构
CN105374760A (zh) * 2014-08-21 2016-03-02 英飞凌科技股份有限公司 半导体模块、用于抓取、移动和电测试半导体模块的方法
US10143099B2 (en) 2014-08-21 2018-11-27 Infineon Technologies Ag Semiconductor module with gripping sockets, methods for gripping, for moving and for electrically testing a semiconductor module

Similar Documents

Publication Publication Date Title
CN104303297B (zh) 电力用半导体模块
CN102005419B (zh) 功率用半导体装置及其制造方法
US7405469B2 (en) Semiconductor device and method of manufacturing the same
CN110444525A (zh) 半导体功率器件的封装件及封装半导体功率器件的方法
US9716058B2 (en) Power module and control integrated circuit
CN104517939B (zh) 垂直分流电阻
US9947613B2 (en) Power semiconductor device and method for manufacturing the same
US10490491B2 (en) Semiconductor device
JP6183226B2 (ja) 電力用半導体装置の製造方法
CN105655306A (zh) 一种集成在散热基板上的双面焊接单面散热功率模块
CN102446910A (zh) 一种新型大功率模块
CN101304010A (zh) 一种薄型功率模块
CN102956509A (zh) 功率器件和封装该功率器件的方法
CN101675520A (zh) 电力用半导体模块
CN104303299A (zh) 半导体装置的制造方法及半导体装置
CN202487565U (zh) 半导体装置
CN102412211A (zh) 电子器件
CN106463417A (zh) 半导体装置的制造方法
CN106098565A (zh) 双面散热带引脚薄型扁平封装功率半导体器件的生产方法
CN103531582A (zh) 半导体单元
CN108493166B (zh) 一种功率半导体模块封装结构及封装方法
CN202434518U (zh) 一种新型大功率模块
CN102054826A (zh) 一种新型无底板功率模块
US20170085190A1 (en) Three-phase inverter module
CN104795388A (zh) 智能功率模块及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20120509