CN105261689A - 全串联的高功率密度led芯片封装结构 - Google Patents
全串联的高功率密度led芯片封装结构 Download PDFInfo
- Publication number
- CN105261689A CN105261689A CN201510693969.6A CN201510693969A CN105261689A CN 105261689 A CN105261689 A CN 105261689A CN 201510693969 A CN201510693969 A CN 201510693969A CN 105261689 A CN105261689 A CN 105261689A
- Authority
- CN
- China
- Prior art keywords
- high power
- led chip
- power density
- series connection
- square
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 13
- 238000009413 insulation Methods 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 230000005496 eutectics Effects 0.000 claims description 7
- 238000009422 external insulation Methods 0.000 claims description 6
- 241000218202 Coptis Species 0.000 claims description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Abstract
本发明属于半导体照明器件技术领域，具体为全串联的高功率密度LED芯片封装结构。所述封装结构包含N×M个单芯片封装器件，排列成N行M列结构，外部用绝缘框箍紧；每个单芯片封装器件的正极导电柱与相邻封装基座的负极金属管电连接，形成全串联封装结构。所述单芯片封装器件的结构，中间为方形导电柱，方形导电柱外层是内绝缘导热层；内绝缘导热层外面是金属管。LED芯片底部的P极与所述器件的方形导电柱或导电板连接；LED芯片顶部N极的焊盘与金属管或金属环电连接。本发明的封装结构，将所有高功率密度LED芯片全部串联，在实现十千瓦级大功率LED器件封装的同时，可以减小电源导线的线径，避免超大电流对线路安全性造成隐患。
Description
技术领域
本发明属于半导体照明器件技术领域，具体涉及全串联的高功率密度LED芯片封装结构。
背景技术
随着半导体照明技术的快速发展，LED封装技术得到了长足的进步，大功率LED封装器件也逐渐推广应用于各种普通照明和特殊照明应用领域。众多工业应用领域对高功率密度光输出的需求，推动了大功率或者高功率密度LED封装技术的不断研究和开发。
CN201410291560.7和CN201410176671.3分别提出了正装和倒装结构芯片的集成封装结构，能够实现高功率密度的LED器件。但是这两种结构中，封装的LED芯片的正、负极都进行了大量并联，单个模组的电流取决于并联的芯片数量，形成了低电压、高电流的封装模组。随着单颗芯片功率的不断增大，芯片电流已达到了十几安培甚至更高，因此导致模组电流非常大，对接电线路的过流量提出了很高的要求。
发明内容
本发明的目的是提供一种可靠性好的全串联的高功率密度LED芯片封装结构，在实现十千瓦级大功率LED器件封装的同时，避免超大电流对线路安全性造成隐患。
本发明提供的全串联的高功率密度LED芯片封装结构，包含N×M个单LED芯片封装器件，N≥1，M≥1，排列成N行M列结构，外部用绝缘框箍紧；每个单芯片封装器件的正极导电柱与相邻封装基座的负极金属管电连接，形成全串联封装结构。
本发明中，所述单芯片封装器件的结构类似于方形同轴电缆，中间为方形导电柱，方形导电柱外层是内绝缘导热层；内绝缘导热层外面是方形金属管；相邻器件的方形金属管之间采用外绝缘导热层进行电气绝缘。
本发明中，所述单芯片封装器件中间为方形导电板，方形导电板外层是内绝缘导热层；绝缘导热层外面是方形金属环；相邻器件的方形金属环之间采用外绝缘导热层进行电气绝缘。
本发明中，LED芯片底部的P极与所述器件的方形导电柱或导电板连接，采用共晶焊的方式；LED芯片顶部N极的焊盘与金属管或金属环电连接，可以采用金线焊接或通过金属箔片共晶焊接。
本发明中，所述的N×M个单芯片封装器件用绝缘框箍紧后，底部抛光，用导热绝缘胶与导电导热绝缘板粘接，形成可通过超大电流的封装基板。
本发明的封装结构，将所有高功率密度LED芯片全部串联，在实现十千瓦级大功率LED器件封装的同时，可以减小电源导线的线径，避免超大电流对线路安全性造成隐患。
附图说明
图1为本发明的全串联的高功率密度LED芯片封装结构实施例的示意图。
图2为本发明的全串联的高功率密度LED芯片封装结构的侧视图。
图3为本发明的全串联的高功率密度LED芯片封装结构的俯视图。
图中标号：1~3—单芯片封装器件；4—绝缘框；11、21、31—方形铜柱；12、22、32—内绝缘导热层；13、23、33—金属管；14、24、34—LED垂直结构芯片；15、25、35—共晶焊；16、26、36—金线；17、27、37—负极连接端；18、28、38—正极连接端；39—正极输入端；51、52—外绝缘层。
具体实施方式
以下结合附图和实施例，对本发明做进一步说明。所描述的实施例仅为本发明的部分实施例。基于本发明中的实施例而未作出创造性成果的其他所有实施例，都属于本发明的保护范围。
本发明的全串联的高功率密度LED芯片封装结构，包含1×3个单芯片封装器件1~3，外部有一个绝缘框4箍紧，如图1所示。单芯片封装器件1~3的结构如图2和图3所示，中间分别是方形铜柱11、21、31，外围分别依次包覆绝缘导热层12、22、32、金属管13、23、33。相邻的器件1和2、2和3之间采用外绝缘层51、52进行电气绝缘。铜柱11、21、31分别作为单芯片封装器件1~3的正极，金属管13、23、33分别作为负极。器件1~3上各排布一个面积为3×7mm2的垂直结构LED芯片14、24、34。芯片底部P极分别与对应的铜柱11、21、31形成共晶焊15、25、35；顶部N极分别与对应的金属管13、23、33通过金线16、26、36连接。为了便于封装基座的串联，金属管13、23、33的一侧有突出的连接端17、27、37，另一侧则剖开露出中间铜柱的连接端18、28、38。连接端18与27、28与37之间采用共晶焊接，连接端38共晶焊一个突出的正极接口39，则三个封装器件实现串联，端口17是整个全串联封装结构的负极输入端，端口39是整个封装结构的正极输入端。该全串联高功率密度LED芯片封装结构的电压为15V，电流75A，功率达到1125W，可以用于TiO2光催化分解有机废气。
Claims (5)
1.全串联的高功率密度LED芯片封装结构，其特征在于：所述封装结构包含N×M个单芯片封装器件，N≥1，M≥1，排列成N行M列结构，外部用绝缘框箍紧；每个单芯片封装器件的正极导电柱与相邻封装基座的负极金属管电连接，形成全串联封装结构。
2.根据权利要求1所述的全串联的高功率密度LED芯片封装结构，其特征在于：所述单芯片封装器件的结构类似于方形同轴电缆，中间为方形导电柱，方形导电柱外层是内绝缘导热层；绝缘导热层外面是方形金属管；相邻器件的金属管之间采用外绝缘导热层进行电气绝缘。
3.根据权利要求1所述的全串联的高功率密度LED芯片封装结构，其特征在于：所述单芯片封装器件中间为方形导电板，方形导电板外层是内绝缘导热层；内绝缘导热层外面是方形金属环；相邻器件的金属环之间采用外绝缘导热层进行电气绝缘。
4.根据权利要求2或3所述的全串联的高功率密度LED芯片封装结构，其特征在于：LED芯片底部的P极与所述器件的方形导电柱或导电板连接，采用共晶焊的方式；LED芯片顶部N极的焊盘与金属管或金属环电连接，采用金线焊接或通过金属箔片共晶焊接。
5.根据权利要求4所述的全串联的高功率密度LED芯片封装结构，其特征在于：所述的N×M个单芯片封装器件用绝缘箍紧后，底部抛光，用导热绝缘胶与导热绝缘板粘接，形成可通过超大电流的封装基板。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510693969.6A CN105261689B (zh) | 2015-10-25 | 2015-10-25 | 全串联的高功率密度led芯片封装结构 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510693969.6A CN105261689B (zh) | 2015-10-25 | 2015-10-25 | 全串联的高功率密度led芯片封装结构 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105261689A true CN105261689A (zh) | 2016-01-20 |
| CN105261689B CN105261689B (zh) | 2018-10-16 |
Family
ID=55101273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510693969.6A Active CN105261689B (zh) | 2015-10-25 | 2015-10-25 | 全串联的高功率密度led芯片封装结构 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105261689B (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030002282A1 (en) * | 2001-06-29 | 2003-01-02 | Jagath Swaris | Modular mounting arrangement and method for light emitting diodes |
| CN201359209Y (zh) * | 2008-11-25 | 2009-12-09 | 董丽霞 | 平板式透镜一体化led光源 |
| CN202434517U (zh) * | 2011-10-26 | 2012-09-12 | 华夏光股份有限公司 | 发光二极管阵列 |
| CN102751271A (zh) * | 2011-04-19 | 2012-10-24 | Lg伊诺特有限公司 | 发光器件阵列 |
| CN205122630U (zh) * | 2015-10-25 | 2016-03-30 | 复旦大学 | 全串联的高功率密度led芯片封装结构 |
-
2015
- 2015-10-25 CN CN201510693969.6A patent/CN105261689B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030002282A1 (en) * | 2001-06-29 | 2003-01-02 | Jagath Swaris | Modular mounting arrangement and method for light emitting diodes |
| CN201359209Y (zh) * | 2008-11-25 | 2009-12-09 | 董丽霞 | 平板式透镜一体化led光源 |
| CN102751271A (zh) * | 2011-04-19 | 2012-10-24 | Lg伊诺特有限公司 | 发光器件阵列 |
| CN202434517U (zh) * | 2011-10-26 | 2012-09-12 | 华夏光股份有限公司 | 发光二极管阵列 |
| CN205122630U (zh) * | 2015-10-25 | 2016-03-30 | 复旦大学 | 全串联的高功率密度led芯片封装结构 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105261689B (zh) | 2018-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203788238U (zh) | 高散热铅笔式接线盒 | |
| CN205122630U (zh) | 全串联的高功率密度led芯片封装结构 | |
| CN106685339A (zh) | 光伏接线盒和二极管 | |
| CN203983728U (zh) | 一种采用铝基板封装的大功率半导体激光器 | |
| CN104979441B (zh) | 一种led芯片及其制作方法及led显示装置 | |
| CN105261689A (zh) | 全串联的高功率密度led芯片封装结构 | |
| CN201985138U (zh) | 用于太阳能发电的集成旁路模块 | |
| CN103050557B (zh) | 一种太阳能电池串的封装电路及太阳能电池组件 | |
| CN205488125U (zh) | 一种太阳能防反二极管 | |
| CN103532490B (zh) | 光伏电源管理模块 | |
| CN104733602A (zh) | 发光二极管之封装结构 | |
| CN205430164U (zh) | 光伏接线盒和二极管 | |
| CN202259441U (zh) | 一种新型led芯片 | |
| CN207199665U (zh) | 一种led光源 | |
| CN208337498U (zh) | 多通道电源管理模块 | |
| CN203260633U (zh) | 不用焊线的led封装结构 | |
| CN203351647U (zh) | Led封装结构 | |
| CN202268386U (zh) | 一种led封装结构 | |
| CN202013885U (zh) | 电极上下设置的led集成封装器件 | |
| CN207638569U (zh) | 一种三相整流桥 | |
| CN205122639U (zh) | 超大功率垂直芯片的集成封装结构 | |
| CN201994295U (zh) | 一种高抗静电的led | |
| CN106887497A (zh) | 一种低热阻led光源 | |
| CN206379357U (zh) | 一种二极管、配置二极管的光伏电池串及光伏组件 | |
| CN106531866B (zh) | 发光二极管封装结构 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |