CN105122489A - 一种用于温度传感器的纳米磁性多层膜及其制造方法 - Google Patents
一种用于温度传感器的纳米磁性多层膜及其制造方法 Download PDFInfo
- Publication number
- CN105122489A CN105122489A CN201480000687.7A CN201480000687A CN105122489A CN 105122489 A CN105122489 A CN 105122489A CN 201480000687 A CN201480000687 A CN 201480000687A CN 105122489 A CN105122489 A CN 105122489A
- Authority
- CN
- China
- Prior art keywords
- layer
- magnetic
- ferromagnetic
- multilayer film
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/36—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using magnetic elements, e.g. magnets, coils
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/36—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using magnetic elements, e.g. magnets, coils
- G01K7/38—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using magnetic elements, e.g. magnets, coils the variations of temperature influencing the magnetic permeability
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
Abstract
一种用于温度传感器的面内磁性纳米多层膜及其制造方法,该多层膜分为三类:第一类结构由下至上依次包括:基片、底层、底部复合磁性层、中间势垒层、顶部复合磁性层和覆盖层,其中顶部复合磁性层和底部复合磁性层采用直接钉扎或间接钉扎结构;第二类由下至上依次包括:基片、底层、底部钉扎层、中间势垒层、顶部钉扎层和覆盖层,所述顶部钉扎层和底部钉扎层的采用直接钉扎或间接钉扎结构;第三类磁性纳米多层膜结构由下至上依次包括:基片、底层、底部磁性多层膜、底部磁性层、中间势垒层、顶部磁性层、顶部磁性多层膜和覆盖层,所述磁性多层膜其磁矩垂直于膜面,底部和顶部多层膜矫顽力不一样,通过退火处理使上下两层铁磁层磁矩处于反平行排列。
Description
PCT国内申请,说明书已公开。
Claims (1)
- PCT国内申请,权利要求书已公开。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201480000687.7A CN105122489B (zh) | 2013-11-01 | 2014-01-23 | 一种用于温度传感器的纳米磁性多层膜及其制造方法 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2013105347818 | 2013-11-01 | ||
CN201310534781.8 | 2013-11-01 | ||
CN201310534781 | 2013-11-01 | ||
CN201480000687.7A CN105122489B (zh) | 2013-11-01 | 2014-01-23 | 一种用于温度传感器的纳米磁性多层膜及其制造方法 |
PCT/CN2014/071166 WO2015062174A1 (zh) | 2013-11-01 | 2014-01-23 | 一种用于温度传感器的纳米磁性多层膜及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105122489A true CN105122489A (zh) | 2015-12-02 |
CN105122489B CN105122489B (zh) | 2017-10-13 |
Family
ID=53003223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480000687.7A Active CN105122489B (zh) | 2013-11-01 | 2014-01-23 | 一种用于温度传感器的纳米磁性多层膜及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9484527B2 (zh) |
JP (1) | JP6105817B2 (zh) |
CN (1) | CN105122489B (zh) |
WO (1) | WO2015062174A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109755382A (zh) * | 2017-11-07 | 2019-05-14 | 上海磁宇信息科技有限公司 | 一种垂直磁电阻元件的顶覆盖层及其制作方法 |
CN111312891A (zh) * | 2020-02-24 | 2020-06-19 | 西安交通大学 | 一种柔性gmr磁场传感器及其制备方法 |
CN112166509A (zh) * | 2018-05-08 | 2021-01-01 | 应用材料公司 | 磁性隧道结结构及其制造方法 |
CN113241253A (zh) * | 2021-05-18 | 2021-08-10 | 季华实验室 | 一种铁磁/氧化物多层膜的制备方法及铁磁/氧化物多层膜 |
CN115602411A (zh) * | 2022-09-07 | 2023-01-13 | 甘肃省科学院传感技术研究所(Cn) | 交换偏置场可连续调控的垂直各向异性人工合成反铁磁耦合多层膜 |
CN115602411B (zh) * | 2022-09-07 | 2024-05-10 | 甘肃省科学院传感技术研究所 | 交换偏置场可连续调控的垂直各向异性人工合成反铁磁耦合多层膜 |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG10201501339QA (en) * | 2014-03-05 | 2015-10-29 | Agency Science Tech & Res | Magnetoelectric Device, Method For Forming A Magnetoelectric Device, And Writing Method For A Magnetoelectric Device |
US9728712B2 (en) | 2015-04-21 | 2017-08-08 | Spin Transfer Technologies, Inc. | Spin transfer torque structure for MRAM devices having a spin current injection capping layer |
US10468590B2 (en) | 2015-04-21 | 2019-11-05 | Spin Memory, Inc. | High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory |
US9853206B2 (en) | 2015-06-16 | 2017-12-26 | Spin Transfer Technologies, Inc. | Precessional spin current structure for MRAM |
US9773974B2 (en) | 2015-07-30 | 2017-09-26 | Spin Transfer Technologies, Inc. | Polishing stop layer(s) for processing arrays of semiconductor elements |
US10163479B2 (en) | 2015-08-14 | 2018-12-25 | Spin Transfer Technologies, Inc. | Method and apparatus for bipolar memory write-verify |
US9741926B1 (en) | 2016-01-28 | 2017-08-22 | Spin Transfer Technologies, Inc. | Memory cell having magnetic tunnel junction and thermal stability enhancement layer |
US10686127B2 (en) * | 2016-03-28 | 2020-06-16 | National University Of Singapore | Antiferromagnet and heavy metal multilayer magnetic systems for switching magnetization using spin-orbit torque |
US9893027B2 (en) * | 2016-04-07 | 2018-02-13 | Nxp Usa, Inc. | Pre-plated substrate for die attachment |
US10460781B2 (en) | 2016-09-27 | 2019-10-29 | Spin Memory, Inc. | Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank |
US10818331B2 (en) | 2016-09-27 | 2020-10-27 | Spin Memory, Inc. | Multi-chip module for MRAM devices with levels of dynamic redundancy registers |
US10360964B2 (en) | 2016-09-27 | 2019-07-23 | Spin Memory, Inc. | Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device |
US10991410B2 (en) | 2016-09-27 | 2021-04-27 | Spin Memory, Inc. | Bi-polar write scheme |
US10437491B2 (en) | 2016-09-27 | 2019-10-08 | Spin Memory, Inc. | Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register |
US10546625B2 (en) | 2016-09-27 | 2020-01-28 | Spin Memory, Inc. | Method of optimizing write voltage based on error buffer occupancy |
US10437723B2 (en) | 2016-09-27 | 2019-10-08 | Spin Memory, Inc. | Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device |
US10366774B2 (en) | 2016-09-27 | 2019-07-30 | Spin Memory, Inc. | Device with dynamic redundancy registers |
US10446210B2 (en) | 2016-09-27 | 2019-10-15 | Spin Memory, Inc. | Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers |
US10665777B2 (en) | 2017-02-28 | 2020-05-26 | Spin Memory, Inc. | Precessional spin current structure with non-magnetic insertion layer for MRAM |
US10672976B2 (en) | 2017-02-28 | 2020-06-02 | Spin Memory, Inc. | Precessional spin current structure with high in-plane magnetization for MRAM |
US10032978B1 (en) | 2017-06-27 | 2018-07-24 | Spin Transfer Technologies, Inc. | MRAM with reduced stray magnetic fields |
US10489245B2 (en) | 2017-10-24 | 2019-11-26 | Spin Memory, Inc. | Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them |
US10481976B2 (en) | 2017-10-24 | 2019-11-19 | Spin Memory, Inc. | Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers |
US10529439B2 (en) | 2017-10-24 | 2020-01-07 | Spin Memory, Inc. | On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects |
US10656994B2 (en) | 2017-10-24 | 2020-05-19 | Spin Memory, Inc. | Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques |
WO2019099438A1 (en) * | 2017-11-17 | 2019-05-23 | Everspin Technologies, Inc. | Magnetoresistive stack/structure and methods of manufacturing therefor |
US10921373B2 (en) * | 2017-11-29 | 2021-02-16 | Allegro Microsystems, Llc | Magnetic field sensor able to identify an error condition |
US10424726B2 (en) | 2017-12-28 | 2019-09-24 | Spin Memory, Inc. | Process for improving photoresist pillar adhesion during MRAM fabrication |
US10811594B2 (en) | 2017-12-28 | 2020-10-20 | Spin Memory, Inc. | Process for hard mask development for MRAM pillar formation using photolithography |
US10891997B2 (en) | 2017-12-28 | 2021-01-12 | Spin Memory, Inc. | Memory array with horizontal source line and a virtual source line |
US10395712B2 (en) | 2017-12-28 | 2019-08-27 | Spin Memory, Inc. | Memory array with horizontal source line and sacrificial bitline per virtual source |
US10360962B1 (en) | 2017-12-28 | 2019-07-23 | Spin Memory, Inc. | Memory array with individually trimmable sense amplifiers |
US10395711B2 (en) | 2017-12-28 | 2019-08-27 | Spin Memory, Inc. | Perpendicular source and bit lines for an MRAM array |
US10840436B2 (en) | 2017-12-29 | 2020-11-17 | Spin Memory, Inc. | Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture |
US10270027B1 (en) | 2017-12-29 | 2019-04-23 | Spin Memory, Inc. | Self-generating AC current assist in orthogonal STT-MRAM |
US10546624B2 (en) | 2017-12-29 | 2020-01-28 | Spin Memory, Inc. | Multi-port random access memory |
US10840439B2 (en) | 2017-12-29 | 2020-11-17 | Spin Memory, Inc. | Magnetic tunnel junction (MTJ) fabrication methods and systems |
US10784439B2 (en) | 2017-12-29 | 2020-09-22 | Spin Memory, Inc. | Precessional spin current magnetic tunnel junction devices and methods of manufacture |
US10236048B1 (en) | 2017-12-29 | 2019-03-19 | Spin Memory, Inc. | AC current write-assist in orthogonal STT-MRAM |
US10199083B1 (en) | 2017-12-29 | 2019-02-05 | Spin Transfer Technologies, Inc. | Three-terminal MRAM with ac write-assist for low read disturb |
US10367139B2 (en) | 2017-12-29 | 2019-07-30 | Spin Memory, Inc. | Methods of manufacturing magnetic tunnel junction devices |
US10236047B1 (en) | 2017-12-29 | 2019-03-19 | Spin Memory, Inc. | Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM |
US10424723B2 (en) | 2017-12-29 | 2019-09-24 | Spin Memory, Inc. | Magnetic tunnel junction devices including an optimization layer |
US10360961B1 (en) | 2017-12-29 | 2019-07-23 | Spin Memory, Inc. | AC current pre-charge write-assist in orthogonal STT-MRAM |
US10886330B2 (en) | 2017-12-29 | 2021-01-05 | Spin Memory, Inc. | Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch |
US10141499B1 (en) | 2017-12-30 | 2018-11-27 | Spin Transfer Technologies, Inc. | Perpendicular magnetic tunnel junction device with offset precessional spin current layer |
US10229724B1 (en) | 2017-12-30 | 2019-03-12 | Spin Memory, Inc. | Microwave write-assist in series-interconnected orthogonal STT-MRAM devices |
US10236439B1 (en) | 2017-12-30 | 2019-03-19 | Spin Memory, Inc. | Switching and stability control for perpendicular magnetic tunnel junction device |
US10255962B1 (en) | 2017-12-30 | 2019-04-09 | Spin Memory, Inc. | Microwave write-assist in orthogonal STT-MRAM |
US10319900B1 (en) | 2017-12-30 | 2019-06-11 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density |
US10339993B1 (en) | 2017-12-30 | 2019-07-02 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching |
US10468588B2 (en) | 2018-01-05 | 2019-11-05 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer |
US10438996B2 (en) | 2018-01-08 | 2019-10-08 | Spin Memory, Inc. | Methods of fabricating magnetic tunnel junctions integrated with selectors |
US10438995B2 (en) | 2018-01-08 | 2019-10-08 | Spin Memory, Inc. | Devices including magnetic tunnel junctions integrated with selectors |
US11262250B2 (en) * | 2018-02-28 | 2022-03-01 | Applied Materials, Inc. | Method for measuring a temperature |
US10446744B2 (en) | 2018-03-08 | 2019-10-15 | Spin Memory, Inc. | Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same |
US11107978B2 (en) | 2018-03-23 | 2021-08-31 | Spin Memory, Inc. | Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer |
US20190296228A1 (en) | 2018-03-23 | 2019-09-26 | Spin Transfer Technologies, Inc. | Three-Dimensional Arrays with Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer |
US10784437B2 (en) | 2018-03-23 | 2020-09-22 | Spin Memory, Inc. | Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer |
US11107974B2 (en) | 2018-03-23 | 2021-08-31 | Spin Memory, Inc. | Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer |
US11257613B2 (en) * | 2018-03-31 | 2022-02-22 | Intel Corporation | Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication |
US10411185B1 (en) | 2018-05-30 | 2019-09-10 | Spin Memory, Inc. | Process for creating a high density magnetic tunnel junction array test platform |
US11502188B2 (en) | 2018-06-14 | 2022-11-15 | Intel Corporation | Apparatus and method for boosting signal in magnetoelectric spin orbit logic |
US11374163B2 (en) | 2018-06-19 | 2022-06-28 | Intel Corporation | Spin orbit memory with multiferroic material |
US11476412B2 (en) | 2018-06-19 | 2022-10-18 | Intel Corporation | Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory |
US11444237B2 (en) | 2018-06-29 | 2022-09-13 | Intel Corporation | Spin orbit torque (SOT) memory devices and methods of fabrication |
US10593396B2 (en) | 2018-07-06 | 2020-03-17 | Spin Memory, Inc. | Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations |
US10692569B2 (en) | 2018-07-06 | 2020-06-23 | Spin Memory, Inc. | Read-out techniques for multi-bit cells |
US10600478B2 (en) | 2018-07-06 | 2020-03-24 | Spin Memory, Inc. | Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations |
US10559338B2 (en) | 2018-07-06 | 2020-02-11 | Spin Memory, Inc. | Multi-bit cell read-out techniques |
US10650875B2 (en) | 2018-08-21 | 2020-05-12 | Spin Memory, Inc. | System for a wide temperature range nonvolatile memory |
US10699761B2 (en) | 2018-09-18 | 2020-06-30 | Spin Memory, Inc. | Word line decoder memory architecture |
US10971680B2 (en) | 2018-10-01 | 2021-04-06 | Spin Memory, Inc. | Multi terminal device stack formation methods |
US11621293B2 (en) | 2018-10-01 | 2023-04-04 | Integrated Silicon Solution, (Cayman) Inc. | Multi terminal device stack systems and methods |
US10580827B1 (en) | 2018-11-16 | 2020-03-03 | Spin Memory, Inc. | Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching |
US11107979B2 (en) | 2018-12-28 | 2021-08-31 | Spin Memory, Inc. | Patterned silicide structures and methods of manufacture |
US10692927B1 (en) | 2019-02-15 | 2020-06-23 | International Business Machines Corporation | Double MTJ stack with synthetic anti-ferromagnetic free layer and AlN bottom barrier layer |
US11557629B2 (en) | 2019-03-27 | 2023-01-17 | Intel Corporation | Spin orbit memory devices with reduced magnetic moment and methods of fabrication |
US11594673B2 (en) | 2019-03-27 | 2023-02-28 | Intel Corporation | Two terminal spin orbit memory devices and methods of fabrication |
EP3739640B1 (en) | 2019-05-13 | 2022-08-24 | IMEC vzw | A layer stack for a magnetic tunnel junction device |
CN110186584B (zh) * | 2019-06-05 | 2020-11-06 | 中国计量大学 | 一种利用磁隧道结自由层矫顽场测量温度的方法 |
JP2021044429A (ja) * | 2019-09-12 | 2021-03-18 | キオクシア株式会社 | 磁気記憶装置 |
TWI724968B (zh) * | 2020-09-07 | 2021-04-11 | 光洋應用材料科技股份有限公司 | 非鐵磁間隔複合層、其製法、人工反鐵磁疊層結構和磁阻式隨機存取記憶體 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070025027A1 (en) * | 2005-07-29 | 2007-02-01 | Chung Young S | Magnetic tunnel junction sensor |
CN101278338A (zh) * | 2005-09-30 | 2008-10-01 | 飞思卡尔半导体公司 | 磁性隧道结温度传感器 |
CN101589452A (zh) * | 2005-09-30 | 2009-11-25 | 爱沃斯宾技术公司 | 磁隧道结温度传感器和方法 |
CN101692374A (zh) * | 2009-10-15 | 2010-04-07 | 复旦大学 | 易轴垂直取向的人工合成反铁磁体和赝自旋阀薄膜结构 |
JP2010147213A (ja) * | 2008-12-18 | 2010-07-01 | Fujitsu Ltd | 磁気抵抗効果素子とその製造方法、磁気再生ヘッド、および情報記憶装置 |
CN102270736A (zh) * | 2010-06-01 | 2011-12-07 | 中国科学院物理研究所 | 一种用于磁敏传感器的磁性纳米多层膜及其制造方法 |
JP2012038929A (ja) * | 2010-08-06 | 2012-02-23 | Hitachi Ltd | 熱電変換素子、それを用いた磁気ヘッド及び磁気記録再生装置 |
CN102419393A (zh) * | 2011-12-30 | 2012-04-18 | 江苏多维科技有限公司 | 一种电流传感器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6773515B2 (en) * | 2002-01-16 | 2004-08-10 | Headway Technologies, Inc. | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures |
JP2006047004A (ja) * | 2004-08-02 | 2006-02-16 | Denso Corp | 温度センサおよび磁気抵抗素子を用いたセンサ |
JP4444241B2 (ja) * | 2005-10-19 | 2010-03-31 | 株式会社東芝 | 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置 |
US7750627B2 (en) * | 2006-10-24 | 2010-07-06 | Headway Technologies, Inc. | Magnetic film sensor having a magnetic film for generating a magnetostriction and a depressed insulating layer |
US7791845B2 (en) * | 2006-12-26 | 2010-09-07 | Hitachi Global Storage Technologies Netherlands B.V. | Tunneling magnetoresistive sensor having a high iron concentration free layer and an oxides of magnesium barrier layer |
US8593862B2 (en) * | 2007-02-12 | 2013-11-26 | Avalanche Technology, Inc. | Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy |
US7605437B2 (en) * | 2007-04-18 | 2009-10-20 | Everspin Technologies, Inc. | Spin-transfer MRAM structure and methods |
JP4738395B2 (ja) * | 2007-09-25 | 2011-08-03 | 株式会社東芝 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
JP5191717B2 (ja) * | 2007-10-05 | 2013-05-08 | 株式会社東芝 | 磁気記録素子とその製造方法及び磁気メモリ |
JP5021764B2 (ja) * | 2007-12-14 | 2012-09-12 | アルプス電気株式会社 | 磁気センサ |
WO2012004883A1 (ja) * | 2010-07-09 | 2012-01-12 | 国立大学法人東北大学 | 磁気抵抗効果素子及びそれを用いたランダムアクセスメモリ |
CN102487124B (zh) * | 2011-09-19 | 2014-07-23 | 中国科学院物理研究所 | 纳米多层膜、场效应管、传感器、随机存储器及制备方法 |
US8611053B2 (en) * | 2012-03-08 | 2013-12-17 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy |
CN202582773U (zh) * | 2012-08-17 | 2012-12-05 | 郑州方兴机械电子有限公司 | 基于自旋重取向的高灵敏度薄膜微型温度传感器 |
-
2014
- 2014-01-23 JP JP2016526771A patent/JP6105817B2/ja active Active
- 2014-01-23 CN CN201480000687.7A patent/CN105122489B/zh active Active
- 2014-01-23 WO PCT/CN2014/071166 patent/WO2015062174A1/zh active Application Filing
-
2016
- 2016-02-18 US US15/046,911 patent/US9484527B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070025027A1 (en) * | 2005-07-29 | 2007-02-01 | Chung Young S | Magnetic tunnel junction sensor |
CN101278338A (zh) * | 2005-09-30 | 2008-10-01 | 飞思卡尔半导体公司 | 磁性隧道结温度传感器 |
CN101589452A (zh) * | 2005-09-30 | 2009-11-25 | 爱沃斯宾技术公司 | 磁隧道结温度传感器和方法 |
JP2010147213A (ja) * | 2008-12-18 | 2010-07-01 | Fujitsu Ltd | 磁気抵抗効果素子とその製造方法、磁気再生ヘッド、および情報記憶装置 |
CN101692374A (zh) * | 2009-10-15 | 2010-04-07 | 复旦大学 | 易轴垂直取向的人工合成反铁磁体和赝自旋阀薄膜结构 |
CN102270736A (zh) * | 2010-06-01 | 2011-12-07 | 中国科学院物理研究所 | 一种用于磁敏传感器的磁性纳米多层膜及其制造方法 |
JP2012038929A (ja) * | 2010-08-06 | 2012-02-23 | Hitachi Ltd | 熱電変換素子、それを用いた磁気ヘッド及び磁気記録再生装置 |
CN102419393A (zh) * | 2011-12-30 | 2012-04-18 | 江苏多维科技有限公司 | 一种电流传感器 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109755382A (zh) * | 2017-11-07 | 2019-05-14 | 上海磁宇信息科技有限公司 | 一种垂直磁电阻元件的顶覆盖层及其制作方法 |
CN109755382B (zh) * | 2017-11-07 | 2022-11-08 | 上海磁宇信息科技有限公司 | 一种垂直磁电阻元件的顶覆盖层及其制作方法 |
CN112166509A (zh) * | 2018-05-08 | 2021-01-01 | 应用材料公司 | 磁性隧道结结构及其制造方法 |
CN111312891A (zh) * | 2020-02-24 | 2020-06-19 | 西安交通大学 | 一种柔性gmr磁场传感器及其制备方法 |
CN113241253A (zh) * | 2021-05-18 | 2021-08-10 | 季华实验室 | 一种铁磁/氧化物多层膜的制备方法及铁磁/氧化物多层膜 |
CN113241253B (zh) * | 2021-05-18 | 2023-02-10 | 季华实验室 | 一种铁磁/氧化物多层膜的制备方法及铁磁/氧化物多层膜 |
CN115602411A (zh) * | 2022-09-07 | 2023-01-13 | 甘肃省科学院传感技术研究所(Cn) | 交换偏置场可连续调控的垂直各向异性人工合成反铁磁耦合多层膜 |
CN115602411B (zh) * | 2022-09-07 | 2024-05-10 | 甘肃省科学院传感技术研究所 | 交换偏置场可连续调控的垂直各向异性人工合成反铁磁耦合多层膜 |
Also Published As
Publication number | Publication date |
---|---|
US20160163965A1 (en) | 2016-06-09 |
WO2015062174A1 (zh) | 2015-05-07 |
JP6105817B2 (ja) | 2017-03-29 |
JP2016541112A (ja) | 2016-12-28 |
CN105122489B (zh) | 2017-10-13 |
US9484527B2 (en) | 2016-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105122489B (zh) | 一种用于温度传感器的纳米磁性多层膜及其制造方法 | |
CN102270736B (zh) | 一种用于磁敏传感器的磁性纳米多层膜及其制造方法 | |
Parkin et al. | Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers | |
CN108182958B (zh) | 用于多层磁性材料的改良式晶种层 | |
Inomata et al. | Large tunneling magnetoresistance at room temperature using a Heusler alloy with the B2 structure | |
US8962348B2 (en) | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | |
US7443639B2 (en) | Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials | |
JP5840739B2 (ja) | スピントロニクス素子およびその製造方法、ならびに磁気読み取りヘッドおよびその製造方法 | |
JP6866694B2 (ja) | 磁気抵抗効果素子 | |
WO2014163121A1 (ja) | 電流垂直型磁気抵抗効果素子 | |
CN104347226B (zh) | 一种基于磁性斯格明子层的磁性多层膜 | |
CN105449096B (zh) | 磁性薄膜结构及其制造、使用方法和磁敏传感单元、阵列 | |
CN103956249B (zh) | 一种垂直各向异性人工反铁磁耦合多层膜材料 | |
Parkin | Spin-polarized current in spin valves and magnetic tunnel junctions | |
KR101042338B1 (ko) | 자기터널접합 디바이스 및 그 제조 방법 | |
CN101542767A (zh) | 隧道磁阻薄膜及磁性多层膜制作装置 | |
CN106953003A (zh) | 磁性存储器件和制造该磁性存储器件的方法 | |
Ustinov et al. | High-sensitive hysteresisless spin valve with a composite free layer | |
JP2003092440A (ja) | 磁化スイッチ素子 | |
Ranjbar et al. | High-Temperature Magnetic Tunnel Junction Magnetometers Based on L1 $ _0 $-PtMn Pinned Layer | |
JP2007027441A (ja) | 強磁性半導体交換結合膜 | |
CN213816194U (zh) | 一种隧道磁电阻及隧道磁器件 | |
CN213816191U (zh) | 一种隧道磁电阻及隧道磁器件 | |
Rata et al. | Large tunneling magnetoresistance effect at high voltage drop for Co-based Heusler alloy∕ MgO∕ CoFe junctions | |
CN112768602A (zh) | 一种隧道磁电阻及其制造方法、隧道磁器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |