CN105116589A - 阵列基板、透光钝化膜及液晶显示面板的制造方法 - Google Patents

阵列基板、透光钝化膜及液晶显示面板的制造方法 Download PDF

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CN105116589A
CN105116589A CN201510624658.4A CN201510624658A CN105116589A CN 105116589 A CN105116589 A CN 105116589A CN 201510624658 A CN201510624658 A CN 201510624658A CN 105116589 A CN105116589 A CN 105116589A
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transparency conducting
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赵阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种阵列基板的制造方法，该方法包括：在衬底基材上形成第一透光导电膜；在不超过200℃的温度下于第一透光导电膜上形成透光钝化膜；在透光钝化膜上形成第二透光导电膜。本发明还提供一种透明钝化膜及液晶显示面板的制造方法。本发明能够减少产生于钝化层的表面上的颗粒状的突起，提高液晶显示面板的穿透率。

Description

阵列基板、透光钝化膜及液晶显示面板的制造方法
技术领域
本发明涉及液晶显示技术领域，具体而言涉及一种阵列基板、透光钝化膜及液晶显示面板的制造方法。
背景技术
对于诸如FFS(FringeFieldSwitching，边缘场开关技术)模式的液晶显示面板，其阵列基板(即Array基板)的衬底基材上形成有三层薄膜，依次为公共电极层、钝化层、像素电极层。当前，业界通常使用超过285℃的高温溅射方法形成钝化层。但是在高温溅射的过程中，用于形成钝化层的钝化材料的颗粒活性较高，导致在最终形成的钝化层的表面上产生较多颗粒状的突起，从而严重影响液晶显示面板的穿透率。
发明内容
鉴于此，本发明实施例提供一种阵列基板、透光钝化膜及液晶显示面板的制造方法，以减少形成于钝化层表面上的突起，提高穿透率。
本发明实施例提供的一种阵列基板的制造方法，包括：在衬底基材上形成第一透光导电膜；在不超过200℃的温度于第一透光导电膜上形成透光钝化膜；在透光钝化膜上形成第二透光导电膜。
其中，所述在衬底基材上形成第一透光导电膜的步骤包括：在第一预设温度下于衬底基材上形成第一透光导电膜，并在形成第一透光导电膜后进行退火，所述第一预设温度大于200℃。
其中，所述在衬底基材上形成第一透光导电膜的步骤包括：在非加热状态下于衬底基材上形成第一透光导电膜。
其中，所述在透光钝化膜上形成第二透光导电膜的步骤包括：在第二预设温度下于透光钝化膜上形成第二透光导电膜，并在形成第二透光导电膜后进行退火，所述第二预设温度大于200℃。
其中，第一预设温度和第二预设温度相等。
其中，所述在透光钝化膜上形成第二透光导电膜的步骤包括：在非加热状态下于透光钝化膜上形成第二透光导电膜。
其中，所述在不超过200℃的温度于第一透光导电膜上形成透光钝化膜的步骤还包括：在透光钝化膜上刻蚀形成接触孔，以使第二透光导电膜通过接触孔和阵列基板的薄膜晶体管的源极或漏极电连接。
其中，第一透光导电膜为公共电极层，且第二透光导电膜为像素电极层。
本发明实施例还提供一种透光钝化膜的制造方法，透光钝化膜夹设于公共电极层和像素电极层之间，且公共电极层临近设置于阵列基板上，该方法包括：在200℃的温度下于公共电极层上形成透光钝化膜。
本发明实施例进一步提供一种的液晶显示面板的制造方法，包括：在衬底基材上形成公共电极层；在200℃的温度下于公共电极层上形成透光钝化膜；在透光钝化膜上形成像素电极层。
本发明实施例的阵列基板、透光钝化膜及液晶显示面板的制造方法，采用低温形成钝化层，降低钝化材料的颗粒活性，从而减少产生于钝化层的表面上的颗粒状的突起，提高液晶显示面板的穿透率。
附图说明
图1是本发明的阵列基板的制造方法一实施例的流程示意图；
图2是本发明的阵列基板一实施例的结构剖视图；
图3是本发明的阵列基板的制造方法另一实施例的流程示意图；
图4是本发明的液晶显示面板一实施例的结构剖视图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明所提供的示例性的实施例的技术方案进行清楚、完整地描述。
图1是本发明的阵列基板的制造方法一实施例的流程示意图。所述方法用于形成三层膜结构，该三层膜结构包括依次层叠的第一透光导电膜、透光钝化膜和第二透光导电膜，如图1所示，所述方法包括：
S11：在衬底基材上形成第一透光导电膜。
S12：在不超过200℃的温度于第一透光导电膜上形成透光钝化膜。
S13：在透光钝化膜上形成第二透光导电膜。
第一透光导电膜和第二透光导电膜的材料可以相同，例如两者均可以为ITO(IndiumTinOxide，氧化铟锡)透明导电膜，透光钝化膜是一种透光但不导电的钝化薄膜。在例如FFS模式的液晶显示面板中，第一透光导电膜可以为公共电极层，且第二透光导电膜为像素电极层，则对应地，透光钝化膜为设置于公共电极层和像素电极层之间的钝化层(PassivationLayer，又称PV层或平坦钝化层)。
区别于现有技术的使用超过285℃的高温溅射方法形成透光钝化膜(钝化层)，本发明实施例采用不超过200℃的低温形成钝化层，能够降低形成钝化层的钝化材料的颗粒活性，从而减少产生于钝化层的表面上的颗粒状的突起，提高液晶显示面板的穿透率。
需要说明的是，本发明实施例形成的三层膜结构并非直接形成于液晶显示面板的阵列基板上，即第一透光导电膜和衬底基材之间还可以有其他膜结构，例如具有图2所示结构剖视图的阵列基板。
如图2所示，所述阵列基板20包括衬底基材21、金属层22、第一钝化层23、公共电极层24、第二钝化层25以及像素电极层26。其中：金属层22形成于衬底基材21上；第一钝化层23形成于金属层22上且形成有暴露金属层22的表面的第一接触孔O1；公共电极层24位于第一钝化层23上且位于第一接触孔O1的外围，即第一钝化层23在第一接触孔O1周围的预定范围(尺寸为图中所示b)内未覆盖公共电极层24；第二钝化层25位于公共电极层24以及公共电极层24所暴露的第一钝化层23上，且第二钝化层25形成有金属层22的表面的第二接触孔O2，第二接触孔O2和第一接触孔O1相通以构成一接触孔；像素电极层26位于第二钝化层25上以及第一接触孔O1和第二接触孔O2内，以使像素电极层26通过第二接触孔O2和第一接触孔O1相通构成的接触孔与金属层22电连接，金属层12可以为阵列基板20的薄膜晶体管的源极和漏极的一者。即，在透光钝化膜上刻蚀形成接触孔，以使第二透光导电膜通过接触孔和阵列基板20的薄膜晶体管的源极或漏极电连接。
参阅图3所示的本发明的阵列基板的制造方法，包括以下：
S31：在第一预设温度下于衬底基材上形成第一透光导电膜，所述第一预设温度大于200℃，并在形成第一透光导电膜后进行退火。
S32：在不超过200℃的温度于第一透光导电膜上形成透光钝化膜。
S33：在第二预设温度下于透光钝化膜上形成第二透光导电膜，所述第二预设温度大于200℃，并在形成第二透光导电膜后进行退火。
其中，第一预设温度和第二预设温度可以相等也可以不相等，但两者必须都高于200℃，即，比较于形成透光钝化膜所需的低温，需要在高温下形成第一透光导电膜和第二透光导电膜。
本实施例可以在高温下采用例如溅射、等离子化学气相沉积(PlasmaEnhancedChemicalvapordeposition，PECVD)、化学气相沉积(Chemicalvapordeposition，CVD)、真空蒸镀或低压化学气相沉积等任意组合方法形成第一透光导电膜、透光钝化膜和第二透光导电膜。
在形成厚度为(埃米)的第一透光导电膜并退火后，若采用现有技术在285℃的温度下形成透光钝化膜，则液晶显示面板的穿透率为43.76％，而本实施例在形成厚度为的第一透光导电膜并退火后，若在200℃的温度下形成相同厚度的透光钝化膜，则液晶显示面板的穿透率为88.33％。类似的，在形成厚度为的第一透光导电膜并退火后，若采用现有技术在285℃的温度下形成透光钝化膜，再形成厚度为的第二透光导电膜并退火后，则液晶显示面板的穿透率为48.12％，而本实施例在形成厚度为的第一透光导电膜并退火后，若在200℃的温度下形成透光钝化膜，再形成厚度为的第二透光导电膜并退火后，则液晶显示面板的穿透率为75.39％。
显然采用本发明实施例的制造方法所得到的液晶显示面板的(或膜结构的)穿透率远远大于现有技术的穿透率。
当然，本发明的其他实施例也可以在非加热状态下于衬底基材上形成第一透光导电膜，同理，在非加热状态下于透光钝化膜上形成第二透光导电膜。例如，在非加热状态下形成厚度为的第一透光导电膜后，若在200℃的温度下形成透光钝化膜，再形成厚度为的第二透光导电膜并退火后，则液晶显示面板的穿透率为76.13％。可见所制得的膜结构的穿透率依然远大于现有技术的穿透率。
本发明实施例还提供一种液晶显示面板的制造方法，如图4所示，该液晶显示面板40包括上述阵列基板20、与阵列基板20相对间隔设置的彩膜基板41以及夹设于阵列基板20和彩膜基板41之间的液晶42。该液晶显示面板40的制造方法包括上述阵列基板20的制造方法。而至于其他结构的制造方法步骤，可参阅现有技术，此处不再赘述。
本发明实施例进一步提供一种透光钝化膜的制造方法，该透光钝化膜相当于图2所示夹设于公共电极层24和像素电极层26之间的第二钝化层25，因此可在200℃的温度下于公共电极层24上形成透光钝化膜。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

1.一种阵列基板的制造方法，其特征在于，所述方法包括：
在衬底基材上形成第一透光导电膜；
在不超过200℃的温度于所述第一透光导电膜上形成透光钝化膜；
在所述透光钝化膜上形成第二透光导电膜。
2.根据权利要求1所述的方法，其特征在于，所述在衬底基材上形成第一透光导电膜的步骤包括：
在第一预设温度下于衬底基材上形成第一透光导电膜，并在形成所述第一透光导电膜后进行退火，所述第一预设温度大于200℃。
3.根据权利要求1所述的方法，其特征在于，所述在衬底基材上形成第一透光导电膜的步骤包括：
在非加热状态下于衬底基材上形成第一透光导电膜。
4.根据权利要求1所述的方法，其特征在于，所述在所述透光钝化膜上形成第二透光导电膜的步骤包括：
在第二预设温度下于所述透光钝化膜上形成第二透光导电膜，并在形成所述第二透光导电膜后进行退火，所述第二预设温度大于200℃。
5.根据权利要求4所述的方法，其特征在于，所述第一预设温度和所述第二预设温度相等。
6.根据权利要求1所述的方法，其特征在于，所述在所述透光钝化膜上形成第二透光导电膜的步骤包括：
在非加热状态下于所述透光钝化膜上形成第二透光导电膜。
7.根据权利要求1所述的方法，其特征在于，所述在不超过200℃的温度于所述第一透光导电膜上形成透光钝化膜的步骤还包括：
在所述透光钝化膜上刻蚀形成接触孔，以使所述第二透光导电膜通过所述接触孔和所述阵列基板的薄膜晶体管的源极或漏极电连接。
8.根据权利要求1-7任意一项所述的方法，其特征在于，所述第一透光导电膜为公共电极层，且所述第二透光导电膜为像素电极层。
9.一种透光钝化膜的制造方法，所述透光钝化膜夹设于阵列基板的公共电极层和像素电极层之间，且所述公共电极层临近设置于所述阵列基板上，其特征在于，所述方法包括：
在200℃的温度下于所述公共电极层上形成所述透光钝化膜。
10.一种液晶显示面板的制造方法，其特征在于，所述方法包括：
在衬底基材上形成公共电极层；
在200℃的温度下于所述公共电极层上形成透光钝化膜；
在所述透光钝化膜上形成像素电极层。
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