CN105102693B - 钾冰晶石类型闪烁体材料的制备 - Google Patents

钾冰晶石类型闪烁体材料的制备 Download PDF

Info

Publication number
CN105102693B
CN105102693B CN201480020858.2A CN201480020858A CN105102693B CN 105102693 B CN105102693 B CN 105102693B CN 201480020858 A CN201480020858 A CN 201480020858A CN 105102693 B CN105102693 B CN 105102693B
Authority
CN
China
Prior art keywords
elements
crystalline
moles
mixture
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480020858.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN105102693A (zh
Inventor
V.欧斯彭斯基
S.布拉于塔
R.于歇
J.勒热
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Luxim Solutions LLC
Original Assignee
Saint Gobain Cristaux and Detecteurs SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Cristaux and Detecteurs SAS filed Critical Saint Gobain Cristaux and Detecteurs SAS
Priority to CN202110461201.1A priority Critical patent/CN113174635B/zh
Publication of CN105102693A publication Critical patent/CN105102693A/zh
Application granted granted Critical
Publication of CN105102693B publication Critical patent/CN105102693B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G01T1/2023—Selection of materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/77—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing rare earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/77—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/77—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7772—Halogenides
    • C09K11/7773—Halogenides with alkali or alkaline earth metal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Molecular Biology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Luminescent Compositions (AREA)
  • Measurement Of Radiation (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
CN201480020858.2A 2013-04-12 2014-04-11 钾冰晶石类型闪烁体材料的制备 Active CN105102693B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110461201.1A CN113174635B (zh) 2013-04-12 2014-04-11 钾冰晶石类型闪烁体材料的制备

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1353354A FR3004467B1 (fr) 2013-04-12 2013-04-12 Fabrication d'une elpasolite stoechiometrique
FR1353354 2013-04-12
PCT/FR2014/050893 WO2014167262A1 (fr) 2013-04-12 2014-04-11 Fabrication d'un materiau scintillateur du type elpasolite

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202110461201.1A Division CN113174635B (zh) 2013-04-12 2014-04-11 钾冰晶石类型闪烁体材料的制备

Publications (2)

Publication Number Publication Date
CN105102693A CN105102693A (zh) 2015-11-25
CN105102693B true CN105102693B (zh) 2021-07-13

Family

ID=49510232

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480020858.2A Active CN105102693B (zh) 2013-04-12 2014-04-11 钾冰晶石类型闪烁体材料的制备
CN202110461201.1A Active CN113174635B (zh) 2013-04-12 2014-04-11 钾冰晶石类型闪烁体材料的制备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202110461201.1A Active CN113174635B (zh) 2013-04-12 2014-04-11 钾冰晶石类型闪烁体材料的制备

Country Status (6)

Country Link
US (4) US9599727B2 (https=)
EP (1) EP2984213B1 (https=)
JP (1) JP6449851B2 (https=)
CN (2) CN105102693B (https=)
FR (1) FR3004467B1 (https=)
WO (1) WO2014167262A1 (https=)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016069296A1 (en) * 2014-10-29 2016-05-06 Saint-Gobain Ceramics And Plastics, Inc. Scintillator including an elpasolite scintillator compound and apparatus including the scintillator
US11254867B1 (en) 2015-04-06 2022-02-22 Radiation Monitoring Devices, Inc. Thallium-based scintillator materials
CN108004591A (zh) * 2017-12-11 2018-05-08 达州励志环保科技有限公司 钾冰晶石类型闪烁体材料的制备
WO2019135347A1 (ja) 2018-01-05 2019-07-11 パナソニックＩｐマネジメント株式会社 固体電解質材料、および、電池
WO2019135336A1 (ja) * 2018-01-05 2019-07-11 パナソニックＩｐマネジメント株式会社 固体電解質材料、および、電池
WO2019135328A1 (ja) * 2018-01-05 2019-07-11 パナソニックＩｐマネジメント株式会社 固体電解質材料、および、電池
JP7228816B2 (ja) 2018-01-05 2023-02-27 パナソニックＩｐマネジメント株式会社 正極材料、および、電池
EP3736832B1 (en) * 2018-01-05 2024-04-10 Panasonic Intellectual Property Management Co., Ltd. Solid electrolyte material, and battery
WO2019135320A1 (ja) 2018-01-05 2019-07-11 パナソニックＩｐマネジメント株式会社 固体電解質材料、および、電池
EP3736823A4 (en) * 2018-01-05 2021-03-10 Panasonic Intellectual Property Management Co., Ltd. SOLID ELECTROLYTE AND BATTERY
JPWO2019135318A1 (ja) 2018-01-05 2021-01-14 パナソニックＩｐマネジメント株式会社 固体電解質材料、および、電池
WO2019135345A1 (ja) 2018-01-05 2019-07-11 パナソニックＩｐマネジメント株式会社 固体電解質材料、および、電池
JP7611524B2 (ja) 2018-01-05 2025-01-10 パナソニックＩｐマネジメント株式会社 固体電解質材料、および、電池
EP3736834A4 (en) * 2018-01-05 2021-03-10 Panasonic Intellectual Property Management Co., Ltd. SOLID ELECTROLYTE MATERIAL, AND BATTERY
CN111492442A (zh) * 2018-01-05 2020-08-04 松下知识产权经营株式会社 固体电解质材料和电池
WO2019135316A1 (ja) 2018-01-05 2019-07-11 パナソニックＩｐマネジメント株式会社 固体電解質材料、および、電池
JP7281672B2 (ja) 2018-01-05 2023-05-26 パナソニックＩｐマネジメント株式会社 電池
WO2019135319A1 (ja) * 2018-01-05 2019-07-11 パナソニックＩｐマネジメント株式会社 固体電解質材料、および、電池
CN111566756B (zh) * 2018-01-26 2022-03-08 松下知识产权经营株式会社 固体电解质材料和电池
CN111587508A (zh) 2018-01-26 2020-08-25 松下知识产权经营株式会社 电池
JP7217433B2 (ja) 2018-01-26 2023-02-03 パナソニックＩｐマネジメント株式会社 正極材料およびそれを用いた電池
CN111566757B (zh) * 2018-01-26 2022-08-12 松下知识产权经营株式会社 固体电解质材料和电池
CN111557057B (zh) 2018-01-26 2024-04-19 松下知识产权经营株式会社 正极材料和使用它的电池
WO2020005762A1 (en) 2018-06-29 2020-01-02 Saint-Gobain Ceramics & Plastics, Inc. Luminescent material including a rare earth halide and an apparatus including such material
EP3881103B1 (en) 2018-11-13 2025-11-05 Teledyne FLIR Defense, Inc. Occlusion-based directionality and localization of radiation sources with modular detection systems and methods
WO2020110480A1 (ja) 2018-11-29 2020-06-04 パナソニックＩｐマネジメント株式会社 負極材料、電池、および電池の製造方法
JP7429869B2 (ja) 2018-11-29 2024-02-09 パナソニックＩｐマネジメント株式会社 負極材料、および、電池
JP7365600B2 (ja) * 2018-12-26 2023-10-20 パナソニックＩｐマネジメント株式会社 ハロゲン化物の製造方法
EP3905268A4 (en) * 2018-12-26 2022-03-02 Panasonic Intellectual Property Management Co., Ltd. HALOGENIDE PRODUCTION METHOD
CN112752734A (zh) * 2018-12-26 2021-05-04 松下知识产权经营株式会社 卤化物的制造方法
CN112771005A (zh) 2018-12-26 2021-05-07 松下知识产权经营株式会社 卤化物的制造方法
EP3905273A4 (en) 2018-12-26 2022-02-16 Panasonic Intellectual Property Management Co., Ltd. SOLID ELECTROLYTE AND BATTERY WITH USE THEREOF
WO2020137392A1 (ja) 2018-12-26 2020-07-02 パナソニックＩｐマネジメント株式会社 固体電解質材料およびそれを用いた電池
US11522217B2 (en) 2020-04-14 2022-12-06 Saint-Gobain Ceramics & Plastics, Inc. Electrolyte material and methods of forming
KR102595966B1 (ko) 2020-04-14 2023-11-01 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 이온 전도성 재료, 이온 전도성 재료를 포함하는 전해질 및 형성 방법
CN115428214B (zh) 2020-04-23 2025-08-12 圣戈本陶瓷及塑料股份有限公司 离子导电层及其形成方法
WO2021217045A1 (en) 2020-04-23 2021-10-28 Saint-Gobain Ceramics & Plastics, Inc. Ion conductive layer and methods of forming
JP7318140B2 (ja) 2020-08-07 2023-07-31 サン－ゴバン セラミックス アンド プラスティクス，インコーポレイティド 電解質材料及び形成方法
US11928472B2 (en) 2020-09-26 2024-03-12 Intel Corporation Branch prefetch mechanisms for mitigating frontend branch resteers
US12182317B2 (en) 2021-02-13 2024-12-31 Intel Corporation Region-based deterministic memory safety
KR102637203B1 (ko) 2021-05-17 2024-02-19 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 전해질 물질 및 형성 방법
KR102618325B1 (ko) * 2021-05-21 2023-12-27 한양대학교 산학협력단 금속 할라이드 신틸레이터 및 이의 제조방법
US12504891B2 (en) 2021-06-24 2025-12-23 Intel Corporation Zero-redundancy tag storage for bucketed allocators
US12235791B2 (en) 2021-08-23 2025-02-25 Intel Corporation Loop driven region based frontend translation control for performant and secure data-space guided micro-sequencing
CN114411251B (zh) * 2022-01-20 2023-05-02 西北工业大学深圳研究院 一种使用移动加热器法生长高质量cllb晶体的方法
CN115368897B (zh) * 2022-08-09 2024-04-02 有研稀土新材料股份有限公司 一种钾冰晶石型稀土闪烁材料
FR3142494B1 (fr) 2022-11-29 2025-07-18 Saint Gobain Cristaux Et Detecteurs Procede de fabrication d’un monocrital halogenure a section polygonale
CN116120935B (zh) * 2023-01-17 2024-04-19 有研稀土新材料股份有限公司 一种钾冰晶石型稀土闪烁材料及其制备方法、探测设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013041251A2 (en) * 2011-09-22 2013-03-28 Saint-Gobain Cristaux Et Detecteurs Scintillation compound including a rare earth element and a process of forming the same

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69529700T2 (de) * 1994-06-03 2003-10-16 Agfa-Gevaert, Mortsel Neue Klasse von hochenergetischen Detektionsmaterialien
EP0685548B1 (en) 1994-06-03 2003-02-26 Agfa-Gevaert A novel class of high energy detecting materials
FR2840926B1 (fr) 2002-06-12 2005-03-04 Saint Gobain Cristaux Detecteu Utilisation d'un creuset comprenant du carbone pour la croissance de cristaux comprenant un halogenure de terre rare
FR2847594B1 (fr) 2002-11-27 2004-12-24 Saint Gobain Cristaux Detecteu Preparation de blocs d'halogenure de terre rare
FR2855830B1 (fr) * 2003-06-05 2005-07-08 Stichting Tech Wetenschapp Cristaux scintillateurs du type iodure de terre rare
EP1660610A1 (en) * 2003-08-27 2006-05-31 Philips Intellectual Property & Standards GmbH Gas discharge lamp with down conversion phosphor
EP1553430A1 (en) 2004-01-09 2005-07-13 Stichting Voor De Technische Wetenschappen High light yield thermal neutron scintillators
JP2005246193A (ja) * 2004-03-03 2005-09-15 Konica Minolta Holdings Inc 複合皮膜の製造方法、溶射用粒子、複合皮膜及びそれを用いた放射線画像変換パネル
FR2869115B1 (fr) 2004-04-14 2006-05-26 Saint Gobain Cristaux Detecteu Materiau scintillateur a base de terre rare a bruit de fond nucleaire reduit
US7335891B2 (en) * 2005-06-27 2008-02-26 General Electric Company Gamma and neutron radiation detector
US20080131347A1 (en) * 2006-12-04 2008-06-05 General Electric Company Scintillation compositions and method of manufacture thereof
US8242452B1 (en) 2007-11-09 2012-08-14 Radiation Monitoring Devices, Inc. Cesium and sodium-containing scintillator compositions
US8575553B1 (en) 2007-11-09 2013-11-05 Radiation Monitoring Devices, Inc. Cesium and sodium-containing scintillator compositions
US7655919B1 (en) 2007-11-09 2010-02-02 Radiation Monitoring Devices, Inc. Cesium and lithium-containing quaternary compound scintillators
US7939808B1 (en) 2007-11-09 2011-05-10 Radiation Monitoring Devices, Inc. Cesium and lithium-containing quaternary compound scintillators
US7977645B1 (en) * 2007-11-09 2011-07-12 Radiation Monitoring Devices, Inc. Mixed cesium sodium and lithium halide scintillator compositions
US7767975B2 (en) * 2007-12-04 2010-08-03 Saint-Gobain Cristaux Et Detecteurs Ionizing radiation detector
US8440980B2 (en) 2009-08-03 2013-05-14 Radiation Monitoring Devices, Inc. CsLiLn halide scintillator
FR2967420B1 (fr) * 2010-11-16 2014-01-17 Saint Gobain Cristaux Et Detecteurs Materiau scintillateur a faible luminescence retardee
US9966162B2 (en) * 2011-10-10 2018-05-08 Siemens Medical Solutions Usa, Inc. Metal halide scintillators with reduced hygroscopicity and method of making the same
CN103131418B (zh) * 2011-11-23 2017-04-12 通用电气公司 Ce3+激活的混合卤化物钾冰晶石以及高能量分辨率闪烁体
DE112014003342T5 (de) * 2013-07-19 2016-03-31 University Of Tennessee Research Foundation Ternäre Metallhalid-Szintillatoren

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013041251A2 (en) * 2011-09-22 2013-03-28 Saint-Gobain Cristaux Et Detecteurs Scintillation compound including a rare earth element and a process of forming the same

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Brian F. Aull et al..Impact of ion-host interactions on the 5d-to-4f spectra of lanthanide rare-earth-metal ions. Ⅱ. The Ce-doped elpasolites.《PHYSICAL REVIEW B》.1986,第34卷(第10期),第6647-6655页. *
Bridgman growth of Cs2LiYCl6:Ce and 6Li-enriched Cs2 6LiYCl6:Ce crystals for high resolution gamma ray and neutron spectrometers;William M. Higgins et al.;《journal of Crystal Growth》;20091006;第312卷;第1216-1220页 *
Dual Gamma Neutron detection with Cs2LiLaCl6;Jarek Glodo et al.;《Proc. of SPIE》;20091231;第7449卷;第7449E-1~7页 *
Impact of ion-host interactions on the 5d-to-4f spectra of lanthanide rare-earth-metal ions. Ⅱ. The Ce-doped elpasolites;Brian F. Aull et al.;《PHYSICAL REVIEW B》;19861115;第34卷(第10期);第6647-6655页 *
Scintillation properties of Cs2LiLaBr6 (CLLB) crystals with varying Ce3+ concentration;Urmila Shirwadkar et al.;《 Nuclear Instruments and Methods in Physics Research A》;20100907;第652卷;第268-270页 *

Also Published As

Publication number Publication date
JP6449851B2 (ja) 2019-01-09
EP2984213B1 (fr) 2022-06-22
EP2984213A1 (fr) 2016-02-17
US9599727B2 (en) 2017-03-21
US20160103232A1 (en) 2016-04-14
JP2016522135A (ja) 2016-07-28
US20170139059A1 (en) 2017-05-18
US20190107636A1 (en) 2019-04-11
CN113174635A (zh) 2021-07-27
FR3004467A1 (fr) 2014-10-17
CN105102693A (zh) 2015-11-25
US10598800B2 (en) 2020-03-24
US20180246230A1 (en) 2018-08-30
US9983318B2 (en) 2018-05-29
US10180503B2 (en) 2019-01-15
WO2014167262A1 (fr) 2014-10-16
CN113174635B (zh) 2025-01-07
FR3004467B1 (fr) 2016-05-27

Similar Documents

Publication Publication Date Title
CN105102693B (zh) 钾冰晶石类型闪烁体材料的制备
US7670578B2 (en) Method for preparing rare-earth halide blocks
US8815119B2 (en) Chloride, bromide and iodide scintillators with europium doping
CN108004591A (zh) 钾冰晶石类型闪烁体材料的制备
CN102286286A (zh) 辐射探测用的氯化物闪烁体
Lindsey et al. Crystal growth and spectroscopic performance of large crystalline boules of CsCaI3: Eu scintillator
US9453161B2 (en) Chloride, bromide and iodide scintillators with europium doping
EP1938127B1 (en) High light yield fast scintillator
Zhu et al. Growth and characterization of Cs2LiLaCl6: Ce single crystals
US8496851B2 (en) Scintillation materials in single crystalline, polycrystalline and ceramic form
JP2016008170A (ja) ユウロピウムをドープした、塩化物、臭化物およびヨウ化物シンチレーター
Yoshikawa et al. Development and melt growth of novel scintillating halide crystals
US10174244B2 (en) Doped halide scintillators
Cherginets et al. Preparation and scintillation properties of YCl3: Ce crystals

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20240628

Address after: Ohio, USA

Patentee after: Luxim Solutions LLC

Country or region after: U.S.A.

Address before: Kolb Watt, France

Patentee before: SAINT-GOBAIN CRISTAUX ET DETECTEURS

Country or region before: France