CN105097573B - 半导体模块 - Google Patents

半导体模块 Download PDF

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Publication number
CN105097573B
CN105097573B CN201510244472.6A CN201510244472A CN105097573B CN 105097573 B CN105097573 B CN 105097573B CN 201510244472 A CN201510244472 A CN 201510244472A CN 105097573 B CN105097573 B CN 105097573B
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mating member
surface section
metal
heat treatment
component
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CN105097573A (zh
Inventor
D.博洛夫斯基
A.弗勒梅尔特
C.克施廷
C.施塔尔胡特
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Infineon Technologies AG
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Infineon Technologies AG
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    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
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Abstract

本发明涉及一种半导体模块。本发明涉及一种用于制造电子模块的方法。对此，提供组件（99），该组件具有：电路载体（3），该电路载体具有金属的第一表面区段（311）；第一接合配对件（1），该第一接合配对件借助于第一连接层（41）与金属的第一表面区段（311）以材料决定的方式连接；和金属的第二表面区段（111；312）。在热处理中，将金属的第二表面区段（111；312）不中断地保持在下述温度上，该温度高于至少为300℃的热处理最低温度。此外，提供第二接合配对件（2）。通过将第二接合配对件（2）在对第二表面区段（111；312）进行热处理结束之后以材料决定的方式与组件（99）连接，建立第二接合配对件（2）和组件（99）之间的牢固的连接。

Description

半导体模块
技术领域
本发明涉及一种半导体模块。
背景技术
在电子模块中，电子器件通常通过烧结连接层与电路载体连接。如果在对此所需的连接过程期间出现表面的污染，随后其他的接合过程应该在该表面上进行，那么这能够损害在这种其他的接合过程中制造的连接的质量。例如，有关坚固性的接合连接和/或其持久稳定性能够降低。污染物例如能够为制造烧结连接层所需要的膏和/或制造烧结连接层所需要的辅助剂的残余物、组成部分或反应产物，和/或为出自在连接过程期间存在的氛围环境的残余物、组成部分或反应产物。
发明内容
本发明的任务在于，提供一种用于制造电子模块的方法，其中在组件和第二接合配对件之间能够建立高质量的接合连接，对于所述组件的制造，将第一接合配对件通过烧结法借助于电路载体连接。
所述任务通过根据专利权利要求1所述的半导体模块来解决。本发明的设计方案和改进方案是从属权利要求的主题。
为了制造电子模块，提供组件，所述组件具有：电路载体，所述电路载体具有金属的第一表面区段；第一接合配对件，所述第一接合配对件借助于第一连接层与金属的第一表面区段以材料决定的方式连接。此外，组件具有金属的第二表面区段。此外，提供第二接合配对件。在热处理中，将金属的第二表面区段不中断地保持在下述温度上，所述温度高于至少为300℃的热处理最低温度。通过将第二接合配对件在对第二表面区段的热处理结束之后以材料决定的方式与组件连接，在第二接合配对件和组件之间建立牢固的连接。
附图说明
下面，根据实施例参考附图阐述本发明。其中：
图1示出用于制造组件的方法的中间步骤，其中将电路载体以材料决定的方式与第一接合配对件连接。
图2示出完成的组件。
图3示出在热处理期间的组件。
图4示出在热处理之后的可选地抽吸围绕组件的氛围期间的组件。
图5A示出一种电子模块，对于其制造，将第二接合配对件与根据图2的组件在组件热处理之后直接地并且材料决定地连接。
图5B示出一种电子模块，对于其制造，将第二接合配对件与根据图2的组件在组件热处理之后借助于连接层以材料决定的方式连接。
图6示出热处理期间的组件，其中金属的第二表面区段设有抗氧化层。
图7示出一种电子模块，对于其制造，将第二接合配对件与根据图6的组件在组件热处理之后直接地并且材料决定地连接。
只要没有另作说明，在图中相同的附图标记表示相同的或起相同作用的元件。
具体实施方式
图1示出电路载体3以及要与电路载体3连接的第一接合配对件1。第一接合配对件1能够为任意部件，例如为电子器件（例如，MOSFET、IGBT、晶闸管、JFET、二极管等），但是也能够为任意的其他有源或无源器件或者任意的电子组件或导电的（例如金属的）连接元件。
电路载体3具有介电的绝缘载体30，例如陶瓷，所述绝缘载体具有上侧301，在所述上侧上施加有上部的金属化层31。上部的金属化层31能够如示出的那样结构化或者替代地不结构化。可选地，绝缘载体30的与上侧301相反的下侧302也能够设有下部的金属化层32。所述下部的金属化层能够与上部的金属化层31的设计方案无关地结构化或不结构化。只要存在下部的金属化层32，所述下部的金属化层就能够可选地相对于上部的金属化层31是电绝缘的。
原则上，电路载体3的设计方案是任意的。尤其是，电路载体不一定必须具有绝缘载体30。然而，无论如何，所述电路载体具有金属的第一表面区段311，在所述第一表面区段上，第一接合配对件1借助于第一连接层41以材料决定的方式与电路载体3连接，这作为结果在图2中示出。对此，第一接合配对件1例如具有下部的金属化层12。第一连接层41例如能够为烧结层或焊料层。
如果第一连接层41是烧结层，那么所述第一连接层借助于在图1中示出的膏41’产生，所述膏包含金属粉末411’和溶剂412’。所述膏41’被布置在金属的第一表面区段311和第一接合配对件1的下部的金属化层12之间，使得所述膏连续地在第一接合配对件1的下部的金属化层12和金属的第一表面区段311之间延伸。对此，首先能够将膏41’涂覆到金属的第一表面区段311和/或第一接合配对件1的下部的金属化层12区段上。在涂覆之后，能够将第一接合配对件1和电路载体3连接到一起。
在膏41’连续地在金属的第一表面区段311和第一接合配对件1的下部的金属化层12之间延伸的状态下，将膏41’烧结成固定的第一连接层41，所述第一连接层将第一接合配对件1和电路载体3以材料决定的方式彼此连接。作为结果，因此存在组件99，如其示例性地在图2中示出的那样。
可选地，能够将膏41’在涂覆之后并且在烧结之前仍至少部分地干燥，使得溶剂412’的一大部分挥发掉并且留下干燥的层，所述干燥的层主要由金属粉末411’构成。
组件99具有一个或多个金属的第二表面区段，在所述第二表面区段上，所述组件能够材料决定地与第二接合配对件连接。例如，这种第二表面区段能够为第一接合配对件1的上部的金属化层11的表面区段111，和/或为电路载体3的金属化部的表面区段，例如电路载体3的上部的金属化层31的表面区段312。
如在图2中示意地示出，一个或多个金属的第二表面区段111、312能够由污染物5污染。为了将所述污染物5至少部分地并且在理想情况下完全地从金属的第二表面区段111、312中的一个或多个上移除，至少使相关的金属的第二表面区段111、312经受热处理，在该热处理中将所述第二表面区段不中断地保持在下述温度上，所述温度高于至少为300℃的热处理最低温度。热处理的持续时间原则上能够任意地选择。所述持续时间例如能够为至少一秒。
可选地，不仅一个或多个金属的第二表面区段111、312可以经受热处理，而且整个组件99也可以经受热处理。这表示，在热处理期间，将组件99的每个部位不中断地保持在高于热处理最低温度的温度上。
同样地，热处理最低温度能够不仅仅为至少300℃、而是甚至为至少350℃或甚至至少为355℃。
为了将金属的第二表面区段111、312或甚至将整个组件99出于热处理的目的加热，原则上能够使用任意的加热法。在图3中示出的可能性例如在于，将组件99的金属的组成部件、例如形成一个或多个金属的第二表面区段111、312（只要存在）的金属化部11、31借助于感应器6加热。在用于加热的替代的方法中，例如能够使用加热板、热空气、热风鼓风机、红外线热辐射、激光辐射或等离子射束。
在全部的变型形式中可以进行加热，使得在热处理期间，组件99的金属的组成部分不熔化。
与加热的方法无关地，热处理引起，污染物5至少部分地蒸发并且挥发到包围组件99的氛围中。
可选地，热处理能够在同样在图3中示出的腔200中执行，污染物5通过热处理挥发到其氛围中。
如此外在图4中示出，能够通过对腔200抽真空而将腔200的以所述方式积聚有污染物5的氛围在热处理之后可选地至少部分地从腔200中抽出，以便将位于腔氛围中的污染物5——在理想情况下完全地——从腔200中移除，这在图4中借助多个箭头示出。对此，腔200具有抽吸开口201。抽吸例如能够借助于真空泵进行，所述真空泵连接到抽吸开口上。
根据另一个选择，能够在阻碍第二表面区段111、312的氧化的保护气体氛围中执行热处理。原则上，能够使用任意的保护气体或者保护气体混合物。成本适当的保护气体例如是氮气。
同样地，可选可行的是，在还原性的氛围中执行热处理。由此能够去除在一个或多个金属的第二表面111、312上可能存在的金属氧化物。这种还原性的氛围的适当的物质例如是甲酸和/或氢气和/或混合气体。
与是否在腔200中执行热处理无关地，与是否使用保护气体氛围无关地，与是否使用还原性的氛围无关地，并且与是否进行抽吸无关地，将经过热处理的组件99在至少一个（通过热处理清洁的）金属的第二表面区段111、312上以材料决定的方式与第二接合配对件连接。
第二接合配对件原则上能够为任意的部件，例如有源的或无源的电子器件，或者为电连接线路，例如为接合线，或者为平坦的或弯曲的连接片。
随后，参考图5A示例性地阐述被构造为接合线的第二接合配对件2与（通过热处理清洁的）金属的第二表面区段111、312的连接。在此，接合线通过线接合技术、例如通过超声波接合以本身已知的方式直接与金属的第二表面区段111、312连接。在本文中不仅将（在线接合之前）具有圆形的横截面的线，而且将这些（在线接合之前）不具有圆形的横截面的线视作为接合线。
在图5A中示出的左边的接合线2在第一接合部位上通过线接合、例如通过超声波接合来接合到金属的第二表面区段111上。相应地，在图5A中示出的右边的接合线2在第一接合部位上通过线接合、例如通过超声波接合来接合到金属的第二表面区段312上。左边的和右边的接合线2还能够在一个或多个其他的接合部位上被接合到其他的元件上，所述其他的元件不是组件99的固定的组成部分。在图5A中示出的中间的接合线2在第一接合部位上通过线接合、例如通过超声波接合来接合到金属的第二表面区段111上，并且在第二接合部位上，同样通过线接合、例如通过超声波接合来接合到金属的第二表面区段312上。
根据图5A的图示在此范围中仅是示意的，不一定必须存在三个接合线2。只要在本发明中第二接合配对件2被构造为接合线，那么所述第二接合配对件在至少一个接合部位上直接地接合到在前面的热处理期间清洁的金属的第二表面区段上，例如接合到金属的第二表面区段111或312上。无论如何，被构造为接合线的第二接合配对件2在所述接合部位上接触第二表面区段。
如此外在图5B中示出的那样，第二接合配对件2对于其固定在（通过热处理清洁的）组件99上不一定必须直接固定在金属的第二表面区段111或312上。更确切地说，这能够如在图5B中示出的那样也借助于第二连接层42进行，所述第二连接层连续地在第二接合配对件2和所属的第二表面区段111、312之间延伸。这种第二连接层42能够是导电的（所述第二连接层例如能够具有金属或由金属构成）进而将第二接合配对件2导电地与所属的第二表面区段111、312连接。相关的连接的制造例如能够通过焊接进行（第二连接层42于是是焊料），通过导电的粘接进行（第二连接层42于是是导电的粘接剂），或者通过烧结（第二连接层42于是相应于第一连接层41包含烧结的金属粉末。
在图5B中示出的第二接合配对件2分别为金属片。在图5B中示出的左边的金属片2在第一部位上借助于第二连接层42与金属的第二表面区段111连接。相应地，在图5B中示出的右边的金属片2在第一部位上借助于第二连接层42与金属的第二表面区段312连接。左边的和右边的金属片2还能够在一个或多个其他部位上与其他的元件连接，所述其他的元件不是组件99的固定的组成部分。在图5B中示出的中间的金属片2在第一部位上借助于第二连接层42与金属的第二表面区段111连接，并且在第二部位上与金属的第二表面区段312连接。
根据图5B的图示在此范围内仅仅是示意的，全部三个金属片2不一定必须存在。只要在本发明中第二接合配对件2（例如金属片）借助于第二（可选地导电的）连接层42在金属的第二表面区段111、312上与组件99连接，所述第二连接层42就连续地在第二接合配对件2和所属的金属的第二表面区段111、312之间延伸。
第二接合配对件2（例如如在上文中阐述的接合线或金属片）例如能够由金属构成，例如由铝、铝合金、铜或铜合金构成。对于第二接合配对件2被构造为由铜构成的接合线的情况，铜可选地能够具有至少99%的纯度。
金属的第二表面区段111、312同样能够由金属构成，例如铝、铝合金、铜或铜合金。对于第二表面区段111、312具有铜的情况，其铜含量可选地能够为至少90重量百分比。
通过当前阐述的热处理，在制造固定的第一连接层41之后并且在将第二接合配对件2与组件99连接之前，能够放弃借助于湿法化学和/或借助于等离子工艺清洁组件99。当然，尽管如此能够可选地执行这种清洁。
图6还示出对组件99的热处理，所述组件与根据图1至4阐述的组件99的不同之处仅在于，在至少一个金属的第二表面区段111、312上施加有抗氧化层15或35。这种抗氧化层15、35防止相关的金属的第二表面区段111、312的氧化。因为这样的抗氧化层15、35的污染物5也能够负面地作用于随后的与第二接合配对件2的材料决定的连接，所以热处理在设有一个或多个抗氧化层15、35的组件99上被执行。这种抗氧化层15、35能够与可能的其他抗氧化层15、35无关地在将第一接合配对件1与电路载体3以材料决定的方式连接之前或之后施加到相关的金属的第二表面区段111、312上。这种组件99的热处理此外能够以与在所述图1至4中阐述的组件99的参照图1至4阐述的热处理相同的方式进行。
图7示出一种电子模块，所述电子模块的构造除了一个或多个附加的抗氧化层15、35之外对应于根据图5A的电子模块的构造。制造这种电子模块能够以与参照图5A阐述的相同的方式进行。对此补充地，制造被构造为接合线的第二接合配对件2与金属的第二表面区段111、312之间的直接的材料决定的连接通过下述方式进行：在接合过程期间，即例如在超声波接合期间，将位于相关的金属的第二表面区段111、312上的抗氧化层15、35在接合过程期间由于第二接合配对件2的作用局部地毁坏，使得第二接合配对件2直接接触所述金属的第二表面区段111、312并且材料决定地与其连接。
原则上，不同的材料适合于这样的抗氧化层15、35，例如氧化铝、氮化硅、氧化硅。

Claims (20)

1.用于制造电子模块的方法，具有下述步骤：
提供组件（99），所述组件具有：
·电路载体（3），所述电路载体具有金属的第一表面区段（311）；
·第一接合配对件（1），所述第一接合配对件借助于第一连接层（41）与所述金属的第一表面区段（311）以材料决定的方式连接；和
·金属的第二表面区段（111；312）；
执行热处理，其中将所述金属的第二表面区段（111；312）不中断地保持在下述温度上，所述温度高于至少为300℃的热处理最低温度；
提供第二接合配对件（2）；
通过将所述第二接合配对件（2）在对所述第二表面区段（111；312）的热处理结束之后以材料决定的方式与所述组件（99）连接，建立所述第二接合配对件（2）和所述组件（99）之间的牢固的连接。
2.根据权利要求1所述的方法，其中将整个所述组件（99）在热处理期间不中断地保持在下述温度上，所述温度高于所述热处理最低温度。
3.根据权利要求1或2所述的方法，其中将所述热处理在阻止所述第二表面区段（111；312）氧化的保护气体氛围中执行。
4.根据权利要求1或2所述的方法，其中将所述热处理在还原性的氛围中执行。
5.根据权利要求4所述的方法，其中所述还原性的氛围包含下述气体中的一种气体：甲酸、氢气、混合气体。
6.根据权利要求1或2所述的方法，其中所述热处理在封闭的腔（200）中执行，将所述腔在所述热处理之后抽真空。
7.根据权利要求1或2所述的方法，其中所述热处理最低温度为350℃。
8.根据权利要求1或2所述的方法，其中所述热处理最低温度为355℃。
9.根据权利要求1或2所述的方法，其中所述第二接合配对件（2）由纯度为至少99%的铜构成。
10.根据权利要求1或2所述的方法，其中所述第二表面区段（111；312）是金属化层（11，31）的表面区段，所述金属化层由铜构成或具有至少90重量百分比的铜。
11.根据权利要求1或2所述的方法，其中所述第二表面区段（111）是所述第一接合配对件（1）的金属化部（11）的表面区段。
12.根据权利要求1或2所述的方法，其中所述第二表面区段（312）是所述电路载体（3）的表面区段。
13.根据权利要求1或2所述的方法，其中
所述电路载体（3）具有介电的绝缘载体（30），在所述绝缘载体上施加有上部的金属化层（31）；和
所述第一表面区段（313）是所述上部的金属化层（31）的表面区段。
14.根据权利要求1或2所述的方法，其中所述第一接合配对件（1）是电子器件。
15.根据权利要求1或2所述的方法，其中所述第二接合配对件（2）被构造为接合线，或者被构造为平坦的或弯曲的金属片。
16.根据权利要求1或2所述的方法，其中
所述第二接合配对件（2）被构造为接合线；
在所述热处理期间，将抗氧化层（15，35）施加到所述第二表面区段（111；312）上；并且
将所述抗氧化层（15， 35）在建立所述第二接合配对件（2）和所述组件（99）之间的牢固的连接期间通过所述第二接合配对件（2）的作用局部地破坏。
17.根据权利要求1或2所述的方法，其中在所述热处理期间，所述组件（99）的金属的组成部分不熔化。
18.根据权利要求1或2所述的方法，其中所述第一连接层（41）具有烧结的金属粉末（411’）。
19.根据权利要求1或2所述的方法，其中建立牢固的连接通过下述方式进行，
（a）将所述第二接合配对件（2）直接地接合到所述第二表面区段（111；312）上；或者
（b）将所述第二接合配对件（2）借助于第二连接层（42）牢固地与所述组件（99）连接，使得所述第二连接层（42）连续地在所述第二表面区段（111；312）和所述第二接合配对件（2）之间延伸。
20.根据权利要求1或2所述的方法，其中所述组件（99）的提供具有下述步骤：
提供具有所述金属的第一表面区段（311）的电路载体（3）；
提供具有下部的金属化层（12）的第一接合配对件（1）；
提供包含金属粉末（411’）的膏（41’）；
将所述膏（41’）布置在所述金属的第一表面区段（311）和所述下部的金属化层（12）之间，使得所述膏（41’）连续地在所述金属的第一表面区段（311）和所述下部的金属化层（12）之间延伸；和
将所述膏（41’）烧结成牢固的连接层（41），所述连接层将所述第一接合配对件（1）和所述电路载体（3）以材料决定的方式彼此连接。
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