CN110391146A - 利用预先去氧化物工艺的接合及其执行装置 - Google Patents

利用预先去氧化物工艺的接合及其执行装置 Download PDF

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Publication number
CN110391146A
CN110391146A CN201910318651.8A CN201910318651A CN110391146A CN 110391146 A CN110391146 A CN 110391146A CN 201910318651 A CN201910318651 A CN 201910318651A CN 110391146 A CN110391146 A CN 110391146A
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Prior art keywords
package assembling
package
assembling
technique
coating
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CN201910318651.8A
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CN110391146B (zh
Inventor
余振华
黄英叡
董志航
邵栋梁
谢静华
黄见翎
萧义理
杨素纯
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Priority claimed from US16/264,957 external-priority patent/US11342302B2/en
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Abstract

一种方法包括：拾取第一封装组件，去除第一封装组件的电连接件上的氧化物层，在去除氧化物层之后，将第一封装组件放置在第二封装组件上，以及将第一封装组件接合到第二封装组件。本发明的实施例还涉及利用预先去氧化物工艺的接合及其执行装置。

Description

利用预先去氧化物工艺的接合及其执行装置
技术领域
本发明的实施例涉及利用预先去氧化物工艺的接合及其执行装置。
背景技术
接合是用于将多个预先形成的封装组件集成在一起的常用工艺。在接合工艺中，第一封装组件的电连接件接合到第二封装组件的电连接件，以电互连第一和第二封装组件中的器件。在接合工艺的示例中，从锯切的顶部晶圆拾取顶部管芯，并且将顶部管芯的电连接件浸入诸如焊剂的去氧化物剂中。然后将顶部管芯与底部晶圆中的底部管芯对准，并将顶部管芯放置在底部晶圆上。顶部管芯的顶部电连接件与底部管芯中的底部电连接件对准并且放置在底部电连接件上。在将多个顶部管芯放置在底部管芯上之后，执行回流，使得顶部管芯或底部管芯上的焊料区域熔化。在接合之前，电连接件通常在表面处具有氧化物。在回流期间，去氧化物剂去除顶部和底部电连接件上的氧化物。在回流之后，例如使用溶剂或水去除去氧化物剂。
在另一种接合工艺中，在将顶部管芯放置在底部管芯上之后，不是将顶部电连接件浸入，而是在执行回流的同时将诸如氢气的合成气体传导到顶部管芯和底部管芯，使得氧化物可以还原成金属。
发明内容
本发明的实施例提供了一种形成封装件的方法，包括：拾取第一封装组件；去除所述第一封装组件的电连接件上的氧化物层；在去除所述氧化物层之后，将所述第一封装组件放置在第二封装组件上；以及将所述第一封装组件接合到所述第二封装组件。
本发明的另一实施例提供了一种形成封装件的方法，包括：拾取第一封装组件；将所述第一封装组件输送到第二封装组件；在拾取所述第一封装组件时，去除所述第一封装组件的电连接件的表面上的金属氧化物层；在去除所述金属氧化物层之后，将所述第一封装组件放置在所述第二封装组件上；以及加热所述第一封装组件和所述第二封装组件以将所述第一封装组件接合到所述第二封装组件。
本发明的又一实施例提供了一种形成封装件的装置，配置为将第一封装组件接合到第二封装组件，所述装置包括：拾取模块，配置为拾取所述第一封装组件；去氧化物模块，配置为从所述第一封装组件去除氧化物层；对准模块，配置为将所述第一封装组件与所述第二封装组件对准；以及放置模块，配置为将所述第一封装组件放置在所述第二封装组件上。
附图说明
当结合附图进行阅读时，从以下详细描述可最佳理解本发明的各个方面。应该强调，根据工业中的标准实践，各个部件未按比例绘制并且仅用于说明的目的。实际上，为了清楚的讨论，各个部件的尺寸可以任意地增大或减小。
图1至图4示出了根据一些实施例的接合工艺和相应的去氧化物工艺中的中间阶段的截面图。
图5示出了根据一些实施例的接合器的框图。
图6至图9示出了根据一些实施例的接合工艺和相应的管芯形式的去氧化物工艺中的中间阶段的截面图。
图10示出了根据一些实施例的接合器的框图。
图11至图13示出了根据一些实施例的接合工艺和相应的管芯形式的去氧化物工艺中的中间阶段的截面图。
图14示出了根据一些实施例的接合器的框图。
图15A和图15B分别示出了根据一些实施例的晶圆形式的去氧化物工艺中的中间阶段的截面图和俯视图。
图16A和图16B分别示出了根据一些实施例的晶圆形式的去氧化物工艺中的中间阶段的截面图和俯视图。
图17至图20示出了根据一些实施例的一些晶圆形式的去氧化物工艺中的中间阶段的截面图。
图21示出了根据一些实施例的接合工艺和相应的去氧化物工艺的工艺流程。
具体实施方式
以下公开内容提供了许多用于实现本发明的不同特征不同的实施例或实例。下面描述了组件和布置的具体实施例或实例以简化本发明。当然这些仅是实例而不旨在限制。例如，元件的尺寸不限于所公开的范围或值，但可能依赖于工艺条件和/或器件所需的性能。此外，在以下描述中，在第二部件上方或者上形成第一部件可以包括第一部件和第二部件直接接触形成的实施例，并且也可以包括在第一部件和第二部件之间可以形成额外的部件，从而使得第一部件和第二部件可以不直接接触的实施例。为了简单和清楚的目的，各个部件可以以不同的比例任意地绘制。
此外，为了便于描述，本文中可以使用诸如“在…下方”、“在…下面”、“下部”、“在…上面”、“上部”等的空间关系术语，以描述如图中所示的一个元件或部件与另一元件或部件的关系。除了图中所示的方位外，空间关系术语旨在包括器件在使用或操作工艺中的不同方位。装置可以以其它方式定位(旋转90度或在其它方位)，并且在本文中使用的空间关系描述符可以同样地作相应地解释。
根据一些实施例，提供了用于接合封装组件的去氧化物工艺。根据一些实施例示出了去除电连接件上的氧化物层的中间阶段。讨论了一些实施例的一些变型。在各种视图和说明性实施例中，相同的附图标记用于表示相同的元件。根据本发明的一些实施例，在将封装组件放置(和接合)到其他封装组件上之前，在线去除一些封装组件的电连接件上的氧化物，而不是在将封装组件放置为彼此接触之后使用焊剂或合成气体去除氧化物。这可以解决在某些封装结构的接合工艺之后去除残留物的问题。
图1至图4示出了根据本发明的一些实施例的封装件的去氧化物工艺和接合工艺中的中间阶段的截面图。图1至图4中所示的工艺也在如图21所示的工艺流程300中示意性地反映。
参考图1，示出了封装组件100的一部分。封装组件100可以是器件管芯、封装衬底、插入器、封装件等。根据封装组件100包括器件管芯的一些实施例，封装组件100可以包括半导体衬底102，半导体衬底102可以是例如硅衬底、硅锗衬底、III-V化合物半导体衬底等。有源器件(未示出)可以形成在衬底102的表面处，并且可以包括例如晶体管、二极管等。诸如电阻器、电容器、电感器等的无源器件也可以形成在封装组件100中。金属线和通孔106形成在介电层108中，根据一些实施例，介电层108可以包括低k介电层。示意性地示出了金属线和通孔106和介电层108。金属线和通孔106互连有源器件，并且可以将有源器件连接到上面的电连接件112。
根据本发明的替代实施例，封装组件100是插入器管芯，其中没有有源器件。根据一些实施例，封装组件100可以包括或不包括无源器件(未示出)，诸如电阻器、电容器、电感器、变压器等。根据又一替代实施例，封装组件100是封装衬底，封装衬底可以包括层压封装衬底，其中形成有层压介电层108。导电迹线106(示意性地示出)嵌入在层压介电层108中。根据本发明的替代实施例，封装组件100是积层封装衬底，其包括核心(未示出)和建立在核心的相对侧上的导电迹线(由106表示)。封装组件100还可以包括凸块下金属(UBM)110，在UBM110上形成电连接件112。
在封装组件100是器件管芯、插入器管芯、封装衬底等的每个实施例中，在封装组件100的表面处形成有表面介电层108。根据本发明的一些实施例，表面介电层108是含硅的介电层，其可以包括氧化硅、氮氧化硅(SiON)、氮化硅(SiN)等。电连接件112形成为封装组件100的表面部件，并且电连接件112可以通过金属线和通孔106电耦合到有源器件。电连接件112还可以包括焊料(例如Sn-Ag-Cu焊料或者Sn-Pb焊料)或非焊料金属材料(例如铜、铝、镍、钨或它们的合金)。根据本发明的一些实施例，如图所示，电连接件112突出超过表面介电层108的顶面。根据本发明的其他实施例，表面介电层108的顶面和电连接件112的顶面基本上彼此共面。图1还示出了形成在电连接件112的表面上的金属氧化物层114。金属氧化物层114可以是由于电连接件112暴露于空气而形成的自然氧化物层。取决于电连接件112的材料，氧化物层114可以包括氧化锡、氧化铜等。
根据封装组件100是器件管芯的一些实施例，用于后续接合的表面介电层108和电连接件112可以位于衬底102的前侧(具有有源器件的一侧)或背侧上，尽管图1示出了表面介电层108和电连接件112位于衬底102的前侧上。
根据本发明的一些实施例，执行大量氧化物去除工艺(由箭头22表示)以从封装组件100去除氧化物层114。相应的工艺示出为图21中所示的工艺流程中的工艺302。在整个说明书中，氧化物去除工艺也称为去氧化物工艺。相应的工艺也在图21中的虚线框中示出，以指示可以执行该工艺或者可以跳过该工艺。在大量氧化物去除工艺中，多个分立封装组件100彼此靠近放置，例如，放置在模板或切割带上，并且多个封装组件100上的氧化物层在共同的工艺中被去除，如将在后续工艺中讨论的。多个分立封装组件100彼此间隔开，并且可以具有相同的结构。大量氧化物去除工艺也称为晶圆形式的去氧化物工艺，因为从晶圆锯切的多个封装组件可以一起进行相同的去氧化物工艺。晶圆形式的去氧化物工艺的细节也在随后的段落中讨论并在随后的附图中示出。
图2示出了封装组件100的拾取和转移。相应的工艺在图21所示的工艺流程中示出为工艺304。拾取工艺和转移工艺可以通过真空头20实现。根据本发明的一些实施例，代替在晶圆形式的去氧化物工艺中去除氧化物层，可以以管芯形式和在封装组件100的转移期间去除氧化物层114(图1)。相应的工艺示出为图21中所示的工艺流程中的工艺306。相应的工艺也以虚线框示出，以指示可以执行或可以跳过该工艺。相应的去氧化物工艺(图2中的箭头24所示)称为管芯形式的去氧化物工艺，因为在去氧化物工艺中，氧化物从单个封装组件100而不是从多个封装组件100中去除。管芯形式的去氧化物工艺的细节也在随后的段落中讨论并在随后的附图中示出。
图3示出了封装组件100与封装组件200的对准。相应的工艺示出为图21中所示的工艺流程中的工艺308。封装组件200也可以选自器件管芯、插入器管芯、封装衬底等。根据本发明的一些实施例，封装组件200包括衬底202、表面介电层208和金属焊盘212。封装组件200还可以包括介电层和/或位于介电层中的金属线和通孔。封装组件200可以包括或不包括有源器件和/或无源器件。例如，封装组件200可以具有与针对封装组件100描述的结构类似的结构，并且这里不再重复细节。根据本发明的一些实施例，如图所示，电连接件212从表面介电层208的顶面凹进。根据本发明的一些实施例，表面介电层208的顶面和电连接件212的顶面基本上彼此齐平。
根据本发明的一些实施例，表面介电层208是含硅介电层，其可以包括氧化硅、SiON、SiN等。电连接件212形成为封装组件200的表面部件，并且可以电耦合到封装组件200中的有源器件(如果形成)。电连接件212还可以包括焊料(例如Sn-Ag-Cu焊料或Sn-Pb焊料)或非焊料金属材料(例如铜、铝、镍、钨或它们的合金)。
根据本发明的一些实施例，封装组件200是未经锯开的较大封装组件的一部分，例如未锯开的器件晶圆、未锯开的插入器晶圆、未锯开的封装衬底条或具有封装在其中的多个相同器件管芯的重构晶圆。根据本发明的其他实施例，封装组件200是分立器件管芯、分立插入器、分立封装衬底等。在对准工艺之前，可以执行去氧化物工艺以去除电连接件212上的氧化物层。封装组件200的去氧化物工艺可以例如使用本发明中讨论的湿清洁工艺或大量去氧化物工艺来执行。
根据本发明的一些实施例，同时去除两个电连接件112和212上的氧化物层。相应的工艺示出为图21中所示的工艺流程中的工艺310。相应的工艺也以虚线框示出，以指示可以执行或可以跳过该工艺。相应的去氧化物工艺也是管芯形式的去氧化物工艺，因为氧化物从单个封装组件100和单个封装组件200而不是从多个封装组件100和/或200中去除。相应的去氧化物工艺由图3中的箭头26表示。例如，封装组件100可以靠近封装组件200放置，并且仍然与封装组件200间隔开。然后，例如，通过从合成气体产生等离子体来执行去氧化物工艺，合成气体可包括氢气(H2)和氮气(N2)的混合物。等离子体被引导到封装组件100和200之间的间隙中，以将电连接件112和212上的金属氧化物层还原成金属。在整个说明书中，术语金属氧化物的“还原”和“还原反应”意味着在还原中，与金属结合形成金属氧化物的氧被去结合，并且金属原子变成元素原子并保留在电连接件112和212的表面上。由于还原，预先与金属结合的氧原子可与氢反应形成水(H2O)，然后水被抽空。
参考图4，封装组件100放置在封装组件200上。根据本发明的一些实施例，重复图1至图3中所示的工艺，从而将多个封装组件100放置在多个相应的封装组件200上。在图21所示的工艺流程中，箭头311表示工艺的重复。执行退火工艺或回流工艺以将封装组件100接合到封装组件200。相应的工艺在图21的工艺流程图中示出为工艺312。在去氧化物工艺22、24和26(图1至图3)之间的间隔和发生接合的时间保持较短以防止在电连接件112和212的表面上的氧化物的再生。例如，间隔可以在约1秒至约5秒的范围内。而且，在封装组件100的放置期间，封装组件100和200可以位于具有至少降低的氧气和水分含量的环境中，该环境可以是真空环境、充满氮气的室或房间等。或者，在放置封装组件100期间，封装组件100和200位于开放(清洁)空气中。
接合可以包括焊料接合，其中电连接件112和212中的一个或两个是焊料区域，焊料区域在接合工艺中被回流。根据其他实施例，接合包括金属-金属直接接合，其中电连接件112和212都是非焊料金属区域，并且通过电连接件112和212的相互扩散实现接合。根据本发明的一些实施例，表面介电层108例如通过熔融接合而接合到表面介电层208，其中可以生成Si-O-Si键以将表面介电层108和208接合在一起。因此，相应的接合是包括金属-金属(或焊料)接合和熔融接合的混合接合工艺。根据其他实施例，表面介电层108与表面介电层208接触并且不与表面介电层208接合。根据本发明的其他实施例，在接合之后，表面介电层108与表面介电层208间隔开。
在前面的接合工艺中，可以在三个工艺22(图1)、24(图2)和26(图3)中的至少一个或多个中去除氧化物。这些去氧化物工艺全部在封装组件100与封装组件200接合之前执行，并且还在封装组件100放置在封装组件200上之前执行。在接合和放置之前去除氧化物具有一些有利特征。例如，参考接合的封装组件100和200，在接合工艺之后，电连接件112和212要么完全密封，要么用于接入电连接件112和212的间隙非常小。如果使用焊剂从电连接件112和212去除氧化物，则在接合之后需要去除焊剂，这是不可能的或非常困难的，因为焊剂可能被密封或者进入通道太小。根据本发明的一些实施例，在接合之前执行去氧化物工艺，因此在接合工艺之后不需要焊剂去除工艺。
图5至图21示出了根据一些实施例的用于执行去氧化物工艺和随后的接合工艺的装置和工艺。图5示出了根据本发明的一些实施例的用于执行如图2所示的管芯形式的去氧化物工艺的装置，并且图6至图9示出了相应工艺的截面图。
图5示出了用于执行如图1至图4所示的接合工艺的装置400A。装置400A也称为接合器。接合器400A用于以管芯形式从封装组件100(图2)执行去氧化物工艺，然后接合封装组件。根据本发明的一些实施例，接合器400A包括拾取模块402、去氧化物模块404A、对准模块406和放置模块408。拾取模块402、去氧化物模块404A、对准模块406和放置模块408中的每个包括相应的硬件。而且，可以提供用于控制硬件的软件。例如，控制器410(其包括硬件和软件)信号连接到并且配置为控制和协调拾接合器400A中的拾取模块402、去氧化物模块404A、对准模块406、放置模块408和其他工具的操作。拾取模块402用于拾取和传送封装组件100(图2)，并且如果需要可用于翻转封装组件100。去氧化物模块404A用于从封装组件中去除氧化物。对准模块406用于对准(图3)待接合在一起的封装组件。放置模块408用于将封装组件100放置在其他封装组件200上(图4)。
参考图6至图9所示的工艺详细讨论了接合器400A中的部件的操作。应当理解，图6至图9示出了与图1至图4中相同的工艺，不同之处在于图1至图4集中于封装组件的结构细节，而图6至图9集中于去氧化物工艺的细节。参照图6，多个封装组件100放置在支撑介质28上。根据本发明的一些实施例，支撑介质28是切割带，在该切割带上将晶圆锯开成分立的封装组件100。根据本发明的替代实施例，支撑介质28是模板，并且在切割带上锯切封装组件100，然后将封装组件100放置在模板上以用于拾取和放置工艺。
拾取模块402(图5)配置为拾取图6中的封装组件100。根据一些实施例，拾取模块402可以包括拾取头20(图6)，拾取头20可以是真空头。拾取头20拾取封装组件100之一。接下来，参考图7，对拾取的封装组件100执行去氧化物工艺。图7示意性地示出了电连接件112，电连接件112在封装组件100的转移期间暴露。
示意性地示出了包括在图5中的去氧化物模块404A中的等离子体发生器30。等离子体发生器30可包括射频(RF)发电机32、合成气体源(罐)(未示出)和等离子体输出设备34。根据本发明的一些实施例，等离子体输出设备34包括电极，电极连接至RF发电机32并且从RF发电机32接收RF电源。根据一些实施例，可以在电极之间传导合成气体(可以包括H2和N2)，电极从合成气体产生等离子体。将等离子体吹出到封装组件100，以将封装组件100上的金属氧化物还原成金属。根据本发明的一些实施例，去氧化物工艺进行的持续时间在约100毫秒至约5秒的范围内。等离子体可以是大气等离子体，其在一个大气压的压力下产生。
应当理解，所示的等离子体发生器30仅是示例，也可以使用采用不同等离子体发生机制的其他类型的等离子体发生器。例如，等离子体发生器30可以是远程等离子体发生器，其在不紧邻封装组件100的位置产生等离子体，并且远程等离子体被传导到封装组件100。
根据本发明的一些实施例，等离子体输出设备34固定在支撑介质28(图6)和封装组件200(图8)之间的位置。由拾取头20拾取的封装组件100朝向等离子体输出设备34移动，并且与等离子体输出设备34对准地停放。然后在封装组件100与等离子体输出设备34对准的同时执行去氧化物工艺。在去氧化物工艺之后，封装组件100再次转移到封装组件200(图8)。根据替代实施例，等离子体输出设备34是可移动的。在封装组件100的转移期间，真空头20和等离子体输出设备34沿相同方向(如箭头36A和36B所示)移动，同步移动，从而在转移封装组件100的同时，执行去氧化物工艺。这提高了去氧化物工艺的产量。
图8示出了封装组件100与封装组件200的对准。对准由如图5所示的对准模块406执行。如图3中详细所示，封装组件100的电连接件(如图4中的112)与封装组件200中的电连接件212对准。然后通过放置模块408(图5)将封装组件100放置在封装组件200上。对于每个封装组件100，重复图6至图8所示的工艺。
然后执行接合工艺，如图9所示。根据预期的接合类型，接合工艺可以采用适当的时间和温度来回流焊料区域(如果有的话)，或者实现电连接件112和212之间的相互扩散。
图10示出了根据本发明的一些实施例的用于执行如图3所示的管芯形式的去氧化物工艺的接合器400B的框图，并且图11至图13示出了相应工艺的截面图。接合器400B用于对封装组件100和200执行管芯形式的氧化物去除工艺，然后将封装组件100接合到封装组件200。根据本发明的一些实施例，接合器400B包括拾取模块402、对准模块406、放置模块408和去氧化物模块404A。控制器410连接到并且配置为控制和协调接合器400B中的拾取模块402、对准模块406、放置模块408、去氧化物模块404A和其他工具的操作。参考图11、图12和图13中所示的工艺讨论拾取模块402、对准模块406、放置模块408和去氧化物模块404A的功能。
参照图11，封装组件100放置在支撑介质28上。拾取模块402(图10)可包括如图11中的真空头20，用于逐个拾取封装组件100和将封装组件100转移到封装组件200。图12示意性地示出了封装组件100的转移。
图13示出了对准和去氧化物工艺。封装组件100与封装组件200的对准由如图10所示的对准模块406进行。去氧化物工艺由如图10所示的去氧化物模块404A进行。去氧化物模块404A包括等离子体发生器30，等离子体发生器30可以包括等离子体输出设备34。根据本发明的一些实施例，封装组件100与封装组件200保持在短距离DS1处。距离DS1小，以提高去氧化物工艺的效率。例如，距离DS1可以在约1mm和约5mm之间的范围内。等离子体输出设备34瞄准封装组件100和200之间的间隙。随着封装组件100被保持在封装组件200上，由合成气体产生的等离子体被吹入间隙，使得封装组件100和200的电连接件上的金属氧化物还原回金属。等离子体可以是大气等离子体，其在一个大气压的压力下产生。根据本发明的一些实施例，去氧化物工艺进行的持续时间在约100毫秒至约5秒的范围内。
根据本发明的一些实施例，在将封装组件100与封装组件200对准之前执行去氧化物工艺。根据本发明的替代实施例，在将封装组件100与封装组件200对准之后执行去氧化物工艺。还可以在封装组件100与封装组件200对准的同时执行去氧化物工艺。根据其他实施例，去氧化物工艺可以包括在对准之前、期间和之后的时间周期的任何组合。然后通过放置模块408(图10)将封装组件100放置在封装组件200上。然后执行接合工艺。根据预期的接合类型，接合工艺可以采用适当的时间和温度来回流焊料区域(如果有的话)，或者引起电连接件112和212之间的相互扩散。所得到的结构如图9所示，因此这里不讨论细节。
根据本发明的一些实施例，在封装组件100的转移(图12)期间，不执行去氧化物工艺。根据本发明的其他实施例，在如图12所示的转移工艺期间以及在图13所示的步骤中执行去氧化物工艺。因此，等离子体输出设备34可以与封装组件100一起移动，类似于图7所示，然后停在图13所示的位置，以进一步进行去氧化物工艺。这可以提高接合工艺的产量。
图14示出了根据一些实施例的用于执行晶圆形式的去氧化物工艺22(图1)的接合器400C的框图。接合器400C用于对封装组件100执行晶圆形式的氧化物去除工艺，然后接合封装组件。根据本发明的一些实施例，接合器400C包括去氧化物模块404B、拾取模块402、对准模块406和放置模块408。控制器410连接到并且配置为控制和协调接合器400中的氧化物模块404B、拾取模块402、对准模块406、放置模块408和其他工具的操作。
图15A和图15B分别示出了根据一些实施例的晶圆形式的去氧化物工艺的截面图和俯视图。相应的工艺示出为如图21所示的工艺302并且如图1中的箭头22所示。在晶圆形式的氧化物去除工艺中，多个封装组件100的电连接件上的氧化物在同一工艺中被去除。根据本发明的一些实施例，去氧化物模块404B(图14)包括等离子体发生器30，等离子体发生器30可以进一步包括RF发生器32和等离子体输出设备34。等离子体可以是在一个大气层的压力下产生的大气等离子体。封装组件100位于支撑介质28上(图15A)，并且可以对准成包括多个行和列的阵列。等离子体输出设备34的出口可以是在一个或多个封装组件100上延伸的细长槽。例如，图15B示出了根据一些实施例的等离子体输出设备34的一部分的俯视图。示出的等离子体输出设备34可以具有细长的出口。例如，出口的宽度W1可以在约0.5mm和约2mm之间的范围内。出口的长度L1可以在约10mm和约40mm之间的范围内。箭头38表示等离子体输出设备34的移动。随着等离子体输出设备34的移动，扫描封装组件100，对相应的电连接件进行去氧化物。等离子体输出设备34可以逐行扫描以覆盖支撑介质28上的所有封装组件100。
图16A和图16B分别示出了根据一些实施例的等离子体输出设备34的截面图和俯视图以及相应的去氧化物工艺。相应的去氧化物工艺也示出为如图21中所示的工艺302并且如图1中的箭头22所示。等离子体输出设备34可以是如图15所示的去氧化物模块404B的一部分。参见图16B，等离子体通道40用于输出等离子体。排气通道42形成在等离子体通道40的外侧上。排气通道42可以形成环绕等离子体通道40的全环。在排气通道42的外侧是惰性气体通道44。惰性气体通道44可以形成环绕排气通道42的完整的环。通道40、42和44彼此分开。第一侧壁40A(在俯视图中可以是第一环)限定等离子体通道40。在顶视图中可形成第二环的第二侧壁42A与第一侧壁40A一起限定排气通道42。在俯视图中可以形成第三环的第三侧壁44A与第二侧壁42A一起限定惰性气体通道44。
图16A示出了如图16B所示的工艺的截面图。用于还原金属氧化物的等离子体(由箭头46表示)朝向封装组件100传导。惰性气体通道44用于传导惰性气体，例如氮气、氩气等。惰性气体由箭头48表示。惰性气体48用作等离子体和相应的合成气体的屏障，使得合成气体不会逸出到外部环境中。排气通道42用于再循环惰性气体和合成气体，惰性气体和合成气体由箭头50表示。例如，泵52可连接到排气通道42的出口以泵出气体50。
根据本发明的一些实施例，外侧壁44A具有略高于封装组件100的顶面的水平的底部边缘44A-BE。侧壁40A和42A的底端也高于封装组件100的顶面。因此，等离子体输出设备34可以扫描封装组件100而不必上下移动。底端44A-BE与封装组件100的顶面之间的垂直距离DS2可以小于约2mm，并且可以在约1mm和约2mm之间的范围内。根据本发明的替代实施例，外侧壁44A的底端44A-BE低于封装组件100的顶面。因此，如图16B所示，惰性气体通道44的尺寸和形状设计成至少接收其中一个，可能是多个封装组件100。在相应的去氧化物工艺中，等离子体输出设备34在一些封装组件100上移动，然后降低直到底部边缘44A-BE低于相应的封装组件100的顶面，使得封装组件100容纳在惰性气体通道44内。然后，对相应的封装组件执行去氧化物工艺。去氧化物工艺结束后，等离子体输出设备34升高，然后移动到相邻的封装组件100以执行去氧化物工艺。重复该工艺直到所有封装组件进行去氧化物。如图16A和图16B所示的去氧化物工艺可以在一个大气压的环境中进行。
图17示出了根据一些实施例的晶圆形式的去氧化物工艺的截面图。相应的去氧化物工艺也示出为如图21中所示的工艺302并且如图1中的箭头22所示。该工艺可以通过在真空中产生等离子体58来执行，该真空由泵54产生。去氧化物工艺在室55中进行，室55可具有低于约10毫托的压力。喷淋头56用于输出等离子体58，等离子体58例如由RF发生器32使用合成气体产生。淋浴头56和RF发生器32可以是如图15所示的去氧化物模块404B的部分。多个封装组件100中的电连接件通过等离子体58同时去氧化物。根据本发明的一些实施例，去氧化物工艺的持续时间在约1秒至10秒的范围内。
图18示出了根据一些实施例的晶圆形式的去氧化物工艺和对应的去氧化物模块404B的截面图。相应的去氧化物工艺也示出为如图21中所示的工艺302并且如图1中的箭头22所示。该工艺可以通过将气相还原剂(例如柠檬酸)或合成气体导入室59中来进行。室59保持在略低于一个大气压的压力下。例如，室59中的压力低于约0.9个大气压。室59中的气体可以通过通道66排出。当使用气相还原剂时，起泡器60可以用于从液相还原剂61产生气相还原剂。气相还原剂或合成气体可以通过喷头63进行喷射，以将封装组件100中的氧化物还原成金属。
图19和图20示出了根据一些实施例的晶圆形式的去氧化物工艺中的中间阶段和相应的去氧化物模块404B的截面图。相应的去氧化物工艺也示出为如图21中所示的工艺302并且如图1中的箭头22所示。该工艺可以通过使用喷嘴62将焊剂68喷涂到封装组件100上并加热封装组件100来执行。通过加热激活焊剂以去除封装组件100上的氧化物。喷嘴62扫描所有封装组件100，使得用焊剂68喷涂所有封装组件100。根据本发明的一些实施例，在用焊剂喷涂所有封装组件100之后，将封装组件100加热到约60℃和约70℃之间的温度。加热持续时间可以在约30秒至约5分钟的范围内。在加热之后，如图20所示，喷嘴64再次扫描所有封装组件100并喷射清洁液70，清洁液70可以是去离子水或化学溶液，从而去除助熔剂的残留物。
可以使用图15A和图15B、图16A和图16B、图17、图18和图19与图20中的任何装置和工艺来执行晶圆形式的去氧化物工艺。在晶圆形式的去氧化物工艺之后，封装组件100被拾取模块402(图14)拾取。然后执行对准以使封装组件100与下面的封装组件200对准(参见图4)。对准由对准模块406(图14)执行。接下来，如图14所示的放置模块408将封装组件100放置在封装组件200上(参见图4和图8)。重复拾取和放置工艺，使得多个封装组件100放置在多个封装组件200上。然后执行退火/回流工艺以将封装组件100与封装组件200接合。
本发明的实施例具有一些有利特征。通过在放置和接合封装组件之前执行去氧化物工艺，不需要清洁接合的封装组件以去除焊剂的残留物。这有利地改善了一些封装件的可靠性，因为由于它们的结构，一些封装件难以去除焊剂残留物。而且，本发明的实施例解决了在接合工艺期间不能将合成气体(如果使用的话)传导到电连接件以去氧化物的问题。
根据本发明的一些实施例，一种方法包括：拾取第一封装组件；去除第一封装组件的电连接件上的氧化物层；在去除氧化物层之后，将第一封装组件放置在第二封装组件上；以及将第一封装组件接合到第二封装组件。在一个实施例中，该方法还包括将第一封装组件转移到第二封装组件，其中，在将第一封装组件转移到第二封装组件的一段时间期间执行去除氧化物层。在一个实施例中，去除氧化物层包括：从合成气体产生等离子体；以及在拾取第一封装组件之后并且在将第一封装组件放置在第二封装组件上之前，用等离子体处理第一封装组件。在一个实施例中，去除氧化物层包括：使第一封装组件靠近第二封装组件；以及将合成气体的等离子体注入第一封装组件和第二封装组件之间的间隙中。在一个实施例中，去除氧化物层包括：用合成气体的等离子体扫描第一封装组件和多个附加封装组件，其中，第一封装组件与多个附加封装组件相同。在一个实施例中，去除氧化物层包括：在拾取第一封装组件之前，用合成气体的等离子体处理第一封装组件和多个附加封装组件，其中，第一封装组件和多个附加封装组件在真空环境中同时处理。在一个实施例中，去除氧化物层包括：在拾取第一封装组件之前，用气相还原剂处理第一封装组件和多个附加封装组件，其中，第一封装组件和多个附加封装组件在负压环境中同时处理。在一个实施例中，去除氧化物层包括：用焊剂喷涂第一封装组件和多个附加封装组件；同时加热第一封装组件和多个附加封装组件以去除氧化物层；以及清洗焊剂的残留物。
根据本发明的一些实施例，一种方法包括：拾取第一封装组件；将第一封装组件输送到第二封装组件；在拾取第一封装组件的情况下，去除第一封装组件的电连接件的表面上的金属氧化物层；在去除金属氧化物层之后，将第一封装组件放置在第二封装组件上；以及加热第一封装组件和第二封装组件以将第一封装组件接合到第二封装组件。在一个实施例中，去除金属氧化物层包括：将合成气体的等离子体传导到金属氧化物层，以将金属氧化物层还原成金属。在一个实施例中，去除氧化物层包括：停止第一封装组件的移动，当第一封装组件保持静止时，将等离子体传导到金属氧化物层。在一个实施例中，去除氧化物层包括在第一封装组件移动时将等离子体传导到金属氧化物层。在一个实施例中，该方法还包括在第一封装组件移动时，将等离子体输出设备与第一封装组件一起移动以将等离子体传导到金属氧化物层。在一个实施例中，使用真空头拾取第一封装组件，并且当第一封装组件位于真空头上时去除氧化物层。
根据本发明的一些实施例，一种配置为将第一封装组件接合到第二封装组件的装置包括：拾取模块，该拾取模块配置为拾取第一封装组件；去氧化物模块，配置为从第一封装组件去除氧化物层；对准模块，配置为将第一封装组件与第二封装组件对准；以及放置模块，配置为将第一封装组件放置在第二封装组件上。在一个实施例中，该装置还包括控制器，该控制器信号连接到拾取模块、去氧化物模块、对准模块和放置模块，并且配置为控制拾取模块、去氧化物模块、对准模块和放置模块的操作。在一个实施例中，去氧化物模块包括等离子体输出设备，等离子体输出设备配置为朝向第一封装组件输出等离子体。在一个实施例中，等离子体输出设备配置为在拾取第一封装组件之后朝向第一封装组件输出等离子体。在一个实施例中，等离子体输出设备配置为当以与第一封装组件的移动同步的模式移动时输出等离子体。在一个实施例中，去氧化物模块配置为对多个封装组件执行去氧化物操作。
上面概述了若干实施例的特征，使得本领域人员可以更好地理解本发明的方面。本领域人员应该理解，它们可以容易地使用本发明作为基础来设计或修改用于实施与本文所介绍实施例相同的目的和/或实现相同优势的其它工艺和结构。本领域技术人员也应该意识到，这种等同构造并且不背离本发明的精神和范围，并且在不背离本发明的精神和范围的情况下，本文中它们可以做出多种变化、替换以及改变。

Claims (10)

1.一种形成封装件的方法，包括：
拾取第一封装组件；
去除所述第一封装组件的电连接件上的氧化物层；
在去除所述氧化物层之后，将所述第一封装组件放置在第二封装组件上；以及
将所述第一封装组件接合到所述第二封装组件。
2.根据权利要求1所述的方法，还包括将所述第一封装组件转移到所述第二封装组件，其中，在将所述第一封装组件转移到所述第二封装组件的一段时间期间执行去除所述氧化物层。
3.根据权利要求1所述的方法，其中，去除所述氧化物层包括：
从合成气体产生等离子体；以及
在拾取所述第一封装组件之后并且在将所述第一封装组件放置在所述第二封装组件上之前，用所述等离子体处理所述第一封装组件。
4.根据权利要求1所述的方法，其中，去除所述氧化物层包括：
使所述第一封装组件靠近所述第二封装组件；以及
将合成气体的等离子体注入所述第一封装组件和所述第二封装组件之间的间隙中。
5.根据权利要求1所述的方法，其中，去除所述氧化物层包括：
用合成气体的等离子体扫描所述第一封装组件和多个附加封装组件，其中，所述第一封装组件与所述多个附加封装组件相同。
6.根据权利要求1所述的方法，其中，去除所述氧化物层包括：
在拾取所述第一封装组件之前，用合成气体的等离子体处理所述第一封装组件和多个附加封装组件，其中，所述第一封装组件和所述多个附加封装组件在真空环境中同时处理。
7.根据权利要求1所述的方法，其中，去除所述氧化物层包括：
在拾取所述第一封装组件之前，用气相还原剂处理所述第一封装组件和多个附加封装组件，其中，所述第一封装组件和所述多个附加封装组件在负压环境中同时处理。
8.根据权利要求1所述的方法，其中，去除所述氧化物层包括：
用焊剂喷涂所述第一封装组件和多个附加封装组件；
同时加热所述第一封装组件和所述多个附加封装组件以去除所述氧化物层；以及
清洗所述焊剂的残留物。
9.一种形成封装件的方法，包括：
拾取第一封装组件；
将所述第一封装组件输送到第二封装组件；
在拾取所述第一封装组件时，去除所述第一封装组件的电连接件的表面上的金属氧化物层；
在去除所述金属氧化物层之后，将所述第一封装组件放置在所述第二封装组件上；以及
加热所述第一封装组件和所述第二封装组件以将所述第一封装组件接合到所述第二封装组件。
10.一种形成封装件的装置，配置为将第一封装组件接合到第二封装组件，所述装置包括：
拾取模块，配置为拾取所述第一封装组件；
去氧化物模块，配置为从所述第一封装组件去除氧化物层；
对准模块，配置为将所述第一封装组件与所述第二封装组件对准；以及
放置模块，配置为将所述第一封装组件放置在所述第二封装组件上。
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