TWI699858B - 接合方法及用於執行其的接合設備 - Google Patents

接合方法及用於執行其的接合設備 Download PDF

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TWI699858B
TWI699858B TW108113761A TW108113761A TWI699858B TW I699858 B TWI699858 B TW I699858B TW 108113761 A TW108113761 A TW 108113761A TW 108113761 A TW108113761 A TW 108113761A TW I699858 B TWI699858 B TW I699858B
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Taiwan
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component
package
package component
packaging
plasma
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TW108113761A
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TW201944554A (zh
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余振華
謝靜華
志航 董
邵棟樑
黃英叡
黃見翎
楊素純
蕭義理
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台灣積體電路製造股份有限公司
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Priority claimed from US16/264,957 external-priority patent/US11342302B2/en
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Abstract

一種方法包括：拾取第一封裝組件；移除所述第一封裝 組件的電性連接件上的氧化物層；在移除所述氧化物層之後，將所述第一封裝組件放置於第二封裝組件上；以及將所述第一封裝組件接合至所述第二封裝組件。

Description

接合方法及用於執行其的接合設備
本發明實施例是有關於一種接合方法及用於執行其的接合設備。
接合是一種用於將多個預先形成的封裝組件整合在一起的常用製程。在接合製程中，第一封裝組件的電性連接件被接合至第二封裝組件的電性連接件以電性相互耦合(inter-couple)所述第一封裝組件及所述第二封裝組件中的裝置。在接合製程的實例中，自鋸切的頂部晶圓拾取頂部晶粒，且將頂部晶粒的電性連接件浸入去氧化物劑(例如，焊劑)中。接著，將頂部晶粒對準至底部晶圓中的底部晶粒，並將頂部晶粒放置於底部晶圓上。將頂部晶粒的頂部電性連接件對準至底部晶粒中的底部電性連接件且將頂部晶粒的頂部電性連接件放置於底部晶粒中的底部電性連接件之上。在將多個頂部晶粒放置於底部晶粒上之後，執行回焊(reflow)，以使頂部晶粒或底部晶粒上的焊料區域被熔融。在接合之前，電性連接件通常於表面處具有氧化物。在回焊期間，去 氧化物劑將頂部電性連接件及底部電性連接件上的氧化物移除。在回焊之後，例如，使用溶劑或水移除去氧化物劑。
在另一接合製程中，在將頂部晶粒放置於底部晶粒上之後，不是對頂部電性連接件進行浸漬，而是在執行回焊的同時將形成氣體(例如，氫氣)引導(conduct)至頂部晶粒及底部晶粒，以使氧化物可被還原成金屬。
本發明實施例提供一種接合方法，包括以下步驟。拾取第一封裝組件。移除所述第一封裝組件的電性連接件上的氧化物層。在移除所述氧化物層之後，將所述第一封裝組件放置在第二封裝組件上。將所述第一封裝組件接合至所述第二封裝組件。
本發明實施例提供一種接合方法，包括以下步驟。拾取第一封裝組件。將所述第一封裝組件向第二封裝組件輸送。在拾取所述第一封裝組件時，移除所述第一封裝組件的電性連接件的表面上的金屬氧化物層。在移除所述金屬氧化物層之後，將所述第一封裝組件放置在所述第二封裝組件上。加熱所述第一封裝組件及所述第二封裝組件以將所述第一封裝組件接合至所述第二封裝組件。
本發明實施例提供一種接合設備，被配置成將第一封裝組件接合至第二封裝組件，所述接合設備包括拾取模組、去氧化物模組、對準模組以及放置模組。所述拾取模組被配置成拾取所 述第一封裝組件。所述去氧化物模組被配置成自所述第一封裝組件移除氧化物層。所述對準模組被配置成將所述第一封裝組件對準至所述第二封裝組件。所述放置模組被配置成將所述第一封裝組件放置在所述第二封裝組件上。
20:拾取頭
22、24、26、302、304、306、308、310、312:製程
28:支撐介質
30:電漿產生器
32:射頻功率產生器
34:電漿輸出裝置
36A、36B:方向
38:移動
40、42、44、66:通道
40A、42A、44A:側壁
44A-BE:底部邊緣
46、58:電漿
48:惰性氣體
50:氣體
52、54:幫浦
55、59:腔室
56、63:噴淋頭
60:起泡器
61:液相還原劑
62、64:噴嘴
68:焊劑
70:清潔流體
100、200:封裝組件
102:基底
106:金屬線及通孔
108:介電層
110:球下金屬
112:電性連接件
114:氧化物層
202:基底
208:表面介電層
212:電性連接件
300:製程流程
311:重複
400A、400B、400C:接合器
402:拾取模組
404A、404B:去氧化物模組
406:對準模組
408:放置模組
410:控制器
DS1:距離
DS2:垂直距離
L1:長度
W1:寬度
結合附圖閱讀以下詳細說明，會最佳地理解本揭露的各個態樣。應注意，根據本行業中的標準慣例，各種特徵並非按比例繪製。事實上，為論述清晰起見，可任意增大或減小各種特徵的尺寸。
圖1至圖4示出根據一些實施例的接合製程及對應的去氧化物製程中的中間階段的剖視圖。
圖5示出根據一些實施例的接合器的方塊圖。
圖6至圖9示出根據一些實施例的接合製程及對應的晶粒式去氧化物製程(die-form de-oxide process)中的中間階段的剖視圖。
圖10示出根據一些實施例的接合器的方塊圖。
圖11至圖13示出根據一些實施例的接合製程及對應的晶粒式去氧化物製程中的中間階段的剖視圖。
圖14示出根據一些實施例的接合器的方塊圖。
圖15A及圖15B分別示出根據一些實施例的晶圓式去氧化物製程中的中間階段的剖視圖及俯視圖。
圖16A及圖16B分別示出根據一些實施例的晶圓式去氧化物 製程中的中間階段的剖視圖及俯視圖。
圖17至圖20示出根據一些實施例的一些晶圓式去氧化物製程中的中間階段的剖視圖。
圖21示出根據一些實施例的接合製程及對應的去氧化物製程的製程流程。
以下揭露內容提供用於實施本發明的不同特徵的諸多不同的實施例或實例。以下闡述組件及排列的具體實例以簡化本揭露內容。當然，該些僅為實例而不旨在進行限制。舉例而言，以下說明中將第一特徵形成於第二特徵「之上」或第二特徵「上」可包括其中第一特徵及第二特徵被形成為直接接觸的實施例，且亦可包括其中第一特徵與第二特徵之間可形成有附加特徵、進而使得所述第一特徵與所述第二特徵可不直接接觸的實施例。另外，本揭露可能在各種實例中重複使用參考編號及/或字母。此種重複使用是出於簡潔及清晰的目的，但自身並不表示所論述的各種實施例及/或配置之間的關係。
另外，為易於說明，本文中可使用例如「在...下面」、「在...下方」、「下部」、「上覆」、「上部」及類似用語等空間相對性用語來闡述圖中所示的一個元件或特徵與另一(其他)元件或特徵的關係。除了圖中所繪示的定向之外，所述空間相對性用語旨在涵蓋裝置在使用或操作時的不同定向。設備可被另外定向(旋轉90 度或處於其他定向)，且本文所用的空間相對性描述語可相應地作出解釋。
根據一些實施例提供用於接合封裝組件的去氧化物製程。根據一些實施例示出對電性連接件上的氧化物層進行移除的中間階段。對一些實施例的一些變型進行論述。在各個圖中及說明性實施例通篇中，相同的參考符號是用於標示相同的元件。根據本揭露的一些實施例，在將封裝組件放置(並接合)至其他封裝組件上之前，在線移除(inline-remove)一些封裝組件的電性連接件上的氧化物，而不是在將封裝組件彼此接觸放置之後使用焊劑或形成氣體來移除氧化物。此可解決在用於某種封裝結構的接合製程之後移除殘留物的問題。
圖1至圖4示出根據本揭露的一些實施例的封裝的去氧化物製程及接合製程中的中間階段的剖視圖。圖1至圖4中所示的製程亦示意性地反映於圖21中所示的製程流程300中。
參照圖1，圖1示出封裝組件100的一部分。封裝組件100可為裝置晶粒、封裝基底、中介層、封裝等。根據其中封裝組件100包括裝置晶粒的一些實施例，封裝組件100可包括半導體基底102，半導體基底102可為，例如，矽基底、矽鍺基底、III-V化合物半導體基底等。主動裝置(未示出)可形成於基底102的表面處，且可包括，例如，電晶體、二極體等。被動裝置(例如，電阻器、電容器、電感器等)亦可形成於封裝組件100中。根據一些實施例，金屬線及通孔106形成於介電層108中，介電層108 可包括低介電常數介電層(low-k dielectric layer)。示意性地示出金屬線及通孔106以及介電層108。金屬線及通孔106對主動裝置進行內連，且可將主動裝置連接至上覆的電性連接件112。
根據本揭露的替代實施例，封裝組件100為中介層晶粒，中介層晶粒中不含主動裝置。根據一些實施例，封裝組件100可包括或可不包括被動裝置(未示出)，例如電阻器、電容器、電感器、變壓器等。根據另一些替代實施例，封裝組件100為封裝基底，所述封裝基底可包括疊層封裝基底，所述疊層封裝基底中形成有疊層的介電層108。導電跡線(其被示意性地示出為金屬線及通孔106)嵌入疊層的介電層108中。根據本揭露的替代實施例，封裝組件100為增層式封裝基底，所述增層式封裝基底包括芯體(未示出)及建立在芯體的相對側上的導電跡線(即金屬線及通孔106)。封裝組件100亦可包括球下金屬(Under-Bump-Metallurgy，UBM)110，在球下金屬110上形成有電性連接件112。
在其中封裝組件100為裝置晶粒、中介層晶粒、封裝基底等的每一實施例中，存在形成於封裝組件100的表面處的表面介電層108。根據本揭露的一些實施例，表面介電層108為含矽的介電層，所述含矽的介電層可包含氧化矽、氮氧化矽(silicon oxynitride，SiON)、氮化矽(silicon nitride，SiN)等。電性連接件112被形成為封裝組件100的表面特徵，且電性連接件112可藉由金屬線及通孔106而電性耦合至主動裝置。電性連接件112 亦可包含焊料(例如，Sn-Ag-Cu焊料或Sn-Pb焊料)或非焊料金屬材料(例如，銅、鋁、鎳、鎢、或其合金)。根據本揭露的一些實施例，如圖所示，電性連接件112突出超過表面介電層108的頂表面。根據本揭露的其他實施例，表面介電層108的頂表面與電性連接件112的頂表面彼此實質上共面。圖1亦示出形成於電性連接件112的表面上的金屬氧化物層114。金屬氧化物層114可為由於電性連接件112暴露於外界空氣而形成的天然氧化物層。端視電性連接件112的材料而定，氧化物層114可包含氧化錫、氧化銅等。
根據其中封裝組件100為裝置晶粒的一些實施例，儘管圖1示出用於後續接合的表面介電層108及電性連接件112位於基底102的前側上，但是表面介電層108及電性連接件112可位於基底102的前側(具有主動裝置的一側)或背側上。
根據本揭露的一些實施例，執行大規模氧化物移除製程(mass oxide-removal process)(即由箭頭表示的氧化物移除製程22)以自封裝組件100移除氧化物層114。相應製程被示出為圖21中所示的製程流程中的製程302。在本說明通篇中，氧化物移除製程亦被稱為去氧化物製程。相應製程亦示出於圖21中的虛線框中以指示可執行此製程或可跳過此製程。在大規模氧化物移除製程中，多個分立的封裝組件100被彼此靠近放置於，例如，模板或切割膠帶上，且所述多個封裝組件100上的氧化物層在共用的製程中被移除，如將在後續製程中進行論述。所述多個分立的 封裝組件100彼此間隔開，且可具有相同的結構。由於自晶圓鋸切的多個封裝組件可一起進行相同的去氧化物製程，因此大規模氧化物移除製程亦被稱為晶圓式去氧化物製程。晶圓式去氧化物製程的細節亦於後續的段落中進行論述並於後續的圖中示出。
圖2示出封裝組件100的拾取及轉移。相應製程被示出為圖21中所示的製程流程中的製程304。拾取製程及轉移製程可藉由拾取頭(或真空頭)20來達成。根據本揭露的一些實施例，不是在晶圓式去氧化物製程中移除氧化物層，而是可以晶粒形式且在封裝組件100的轉移期間移除氧化物層114(圖1)。相應製程被示出為圖21中所示的製程流程中的製程306。相應製程亦被示出於虛線框中以指示可執行此製程或可跳過此製程。由於在去氧化物製程中，氧化物是自單個封裝組件100而不是自多個封裝組件100移除，因此，對應的去氧化物製程(即由圖2中的箭頭表示的去氧化物製程24)被稱為晶粒式去氧化物製程。晶粒式去氧化物製程的細節亦於後續的段落中進行論述並於後續的圖中示出。
圖3示出封裝組件100對準至封裝組件200。相應製程被示出為圖21中所示的製程流程中的製程308。封裝組件200亦可選自裝置晶粒、中介層晶粒、封裝基底等。根據本揭露的一些實施例，封裝組件200包括基底202、表面介電層208及電性連接件(或金屬接墊)212。封裝組件200亦可包括介電層及/或介電層中的金屬線及通孔。封裝組件200可包括或不含主動裝置及/或被動 裝置。舉例而言，封裝組件200可具有與針對封裝組件100所闡述的結構類似的結構，且此處不再予以贅述。根據本揭露的一些實施例，如圖所示，電性連接件212是自表面介電層208的頂表面凹進。根據本揭露的一些實施例，表面介電層208的頂表面與電性連接件212的頂表面實質上彼此齊平。
根據本揭露的一些實施例，表面介電層208為含矽的介電層，所述含矽的介電層可包含氧化矽、SiON、SiN等。電性連接件212被形成為封裝組件100的表面特徵且可電性耦合至封裝組件200中的(若形成的)主動裝置。電性連接件212亦可包含焊料(例如，Sn-Ag-Cu焊料或Sn-Pb焊料)或非焊料金屬材料(例如，銅、鋁、鎳、鎢、或其合金)。
根據本揭露的一些實施例，封裝組件200為未被鋸切的較大封裝組件(例如，其中封裝有多個相同的裝置晶粒的未被鋸切的裝置晶圓、未被鋸切的中介層晶圓、未被鋸切的封裝基底條或重構晶圓)的一部分。根據本揭露的其他實施例，封裝組件200為分立的裝置晶粒、分立的中介層、分立的封裝基底等。在對準製程之前，可執行去氧化物製程以移除電性連接件212上的氧化物層。舉例而言，封裝組件200的去氧化物製程可使用本揭露中所論述的濕法清潔製程或大規模去氧化物製程來執行。
根據本揭露的一些實施例，同時移除電性連接件112及212二者上的氧化物層。相應製程被示出為圖21中所示的製程流程中的製程310。相應製程亦示出於虛線框中以指示可執行此製程 或可跳過此製程。由於氧化物是自單個封裝組件100及單個封裝組件200而不是自多個封裝組件100及/或200移除，因此對應的去氧化物製程亦為晶粒式去氧化物製程。對應的去氧化物製程26由圖3中的箭頭表示。舉例而言，封裝組件100可被放置為靠近封裝組件200，且仍與封裝組件200間隔開。接著，例如藉由自形成氣體產生電漿來執行去氧化物製程，所述形成氣體可包括氫氣(H2)與氮氣(N2)的混合物。將電漿引導至封裝組件100與200之間的間隙中以將電性連接件112及212上的金屬氧化物層還原成金屬。在本說明通篇中，用語金屬氧化物的「還原」意味著在還原中，與金屬結合以形成金屬氧化物的氧被分離，且金屬原子變成元素原子並保留於電性連接件112及212的表面上。基於還原，先前與金屬結合的氧原子可與氫反應以形成水(H2O)，接著將水排空。
參照圖4，將封裝組件100放置於封裝組件200上。根據本揭露的一些實施例，重複圖1至圖3中所示的製程，以使多個封裝組件100被放置於多個對應的封裝組件200上。製程的重複311由如圖21中所示的製程流程中的箭頭表示。執行退火製程或回焊製程以將封裝組件100接合至封裝組件200。相應製程被示出為圖21中所示的製程流程中的製程312。去氧化物製程22、24及26(圖1至圖3)與進行接合的時間之間的間隔保持為短以防止於電性連接件112及212的表面上再次產生氧化物。舉例而言，所述間隔可介於約1秒與約5秒之間的範圍內。此外，在封裝組 件100的放置期間，封裝組件100及200可位於具有至少被還原的氧氣及水分含量的環境中，所述環境可為真空環境、充滿氮氣的腔室或室等。作為另一種選擇，在封裝組件100的放置期間，封裝組件100及200位於外界(清潔的)空氣中。
接合可包括焊料接合，其中電性連接件112及212中的一者或二者為焊料區域，所述焊料區域於接合製程中回焊。根據其他實施例，接合包括其中電性連接件112及212二者為非焊料金屬區域的金屬對金屬直接接合，且所述接合是藉由電性連接件112與212的相互擴散來達成。根據本揭露的一些實施例，表面介電層108是例如藉由熔融接合而接合至表面介電層208，其中可產生Si-O-Si鍵以將表面介電層108與208接合在一起。因此，相應接合為混合接合製程，所述混合接合製程包括金屬對金屬(或焊料)接合及熔融接合二者。根據其他實施例，表面介電層108與表面介電層208接觸，但未接合至表面介電層208。根據本揭露的再一些實施例，在接合之後，表面介電層108與表面介電層208間隔開。
在之前的接合製程中，可於所述三個製程22(圖1)、24(圖2)及26(圖3)中的至少一者或多者中移除氧化物。該些去氧化物製程全部在將封裝組件100接合至封裝組件200之前執行，且亦在將封裝組件100放置於封裝組件200上之前執行。在接合及放置之前移除氧化物具有一些有利的特徵。舉例而言，參照被接合的封裝組件100及200，在接合製程之後，電性連接件 112及212被完全密封，或用於接近電性連接件112及212的間隙非常小。若使用焊劑自電性連接件112及212移除氧化物，則在接合之後需移除焊劑，但由於焊劑可被密封或進入通道太小，故前述的移除焊劑為不可能的或非常困難的。根據本揭露的一些實施例，去氧化物製程是在接合之前執行，且因此在接合製程之後不需要進行焊劑移除製程。
圖5至圖21示出根據一些實施例的用於執行去氧化物製程及後續的接合製程的設備及製程。圖5示出根據本揭露的一些實施例的如圖2所示的用於執行晶粒式去氧化物製程的設備，且圖6至圖9示出對應的製程的剖視圖。
圖5示出如圖1至圖4所示的用於執行接合製程的設備400A。設備400A亦被稱為接合器(bonder)。設備(接合器)400A是用於以晶粒形式自封裝組件100(圖2)執行去氧化物製程，且接著對封裝組件進行接合。根據本揭露的一些實施例，設備(接合器)400A包括拾取模組402、去氧化物模組404A、對準模組406及放置模組408。拾取模組402、去氧化物模組404A、對準模組406及放置模組408中的每一者包括對應的硬體。此外，可提供用於控制硬體的軟體。舉例而言，控制器410(其包括硬體及軟體)訊號連接至設備(接合器)400A中的拾取模組402、去氧化物模組404A、對準模組406、放置模組408及其他工具，且被配置成控制及協調設備(接合器)400A中的拾取模組402、去氧化物模組404A、對準模組406、放置模組408及其他工具的操作。 拾取模組402用於拾取及轉移封裝組件100(圖2)，且若需要，則可用於翻轉封裝組件100。去氧化物模組404A用於自封裝組件移除氧化物。對準模組406用於對準(圖3)待接合在一起的封裝組件。放置模組408用於將封裝組件100放置於其他封裝組件200上(圖4)。
參照圖6至圖9所示的製程詳細論述設備(接合器)400A中的組件的操作。應理解，圖6至圖9示出與圖1至圖4相同的製程，但圖1至圖4集中於封裝組件的結構細節，而圖6至圖9集中於去氧化物製程的細節。參照圖6，將多個封裝組件100放置於支撐介質28之上。根據本揭露的一些實施例，支撐介質28為切割膠帶，在所述切割膠帶上將晶圓鋸切成分立的封裝組件100。根據本揭露的替代實施例，支撐介質28為模板，且在切割膠帶上對封裝組件100進行鋸切，且接著將封裝組件100放置於模板上以用於拾取及放置製程。
在圖6中，拾取模組402(圖5)被配置成拾取封裝組件100。根據一些實施例，拾取模組402可包括拾取頭20(圖6)，拾取頭20可為真空頭。封裝組件100中的一者由拾取頭20來拾取。接著，參照圖7，對已被拾取的封裝組件100執行去氧化物製程。圖7示意性地示出電性連接件112，電性連接件112在封裝組件100的轉移期間被暴露。
示意性地示出包括於圖5中的去氧化物模組404A中的電漿產生器30。電漿產生器30可包括射頻(Radio Frequency，RF) 功率產生器32、形成氣體源(罐)(未示出)、及電漿輸出裝置34。根據本揭露的一些實施例，電漿輸出裝置34包括連接至射頻功率產生器32並自射頻功率產生器32接收射頻功率的電極。根據一些實施例，可包括H2及N2的形成氣體可被引導於電極之間，所述電極自形成氣體產生電漿。電漿被吹出至封裝組件100以將封裝組件100上的金屬氧化物還原成金屬。根據本揭露的一些實施例，去氧化物製程被執行達介於約100毫秒與約5秒之間的範圍內的持續時間。電漿可為大氣壓電漿，所述大氣壓電漿是在一個大氣的壓力下產生。
應理解，如圖所示的電漿產生器30僅為實例，且亦可使用利用不同的電漿產生機制的其他類型的電漿產生器。舉例而言，電漿產生器30可為遠端電漿產生器，所述遠端電漿產生器於不緊鄰封裝組件100的位置中產生電漿，且所述遠端電漿被引導至封裝組件100。
根據本揭露的一些實施例，電漿輸出裝置34被固定於支撐介質28(圖6)與封裝組件200(圖8)之間的位置處。使由拾取頭20拾取的封裝組件100向電漿輸出裝置34移動，且與電漿輸出裝置34對準停放。接著，在將封裝組件100與電漿輸出裝置34對準的同時執行去氧化物製程。在去氧化物製程之後，將封裝組件100再次轉移至封裝組件200(圖8)。根據替代實施例，電漿輸出裝置34為可移動的。在轉移封裝組件100期間，拾取頭(或真空頭)20與電漿輸出裝置34沿相同方向(如箭頭所示的方向 36A及36B)移動，其中所述移動是同步的，以使得在轉移封裝組件100的同時，執行去氧化物製程。此會提高去氧化物製程的通量。
圖8示出封裝組件100對準至封裝組件200。所述對準是由圖5所示的對準模組406執行。如圖3中詳細示出，將封裝組件100的電性連接件(例如，圖4中的電性連接件112)對準至封裝組件200中的電性連接件212。接著，由放置模組408(圖5)將封裝組件100放置於封裝組件200上。對每一封裝組件100重複圖6至圖8所示的製程。
接著，如圖9所示，執行接合製程。端視接合的預期類型，接合製程可採用適當的時間及溫度對(若存在的)焊料區域進行回焊，或引起電性連接件112與212之間的相互擴散。
圖10示出根據本揭露的一些實施例的用於執行圖3所示晶粒式去氧化物製程的設備(接合器)400B的方塊圖，且圖11至圖13示出對應的製程的剖視圖。設備(接合器)400B用於對封裝組件100及200二者執行晶粒式去氧化物製程，且接著將封裝組件100接合至封裝組件200。根據本揭露的一些實施例，設備(接合器)400B包括拾取模組402、對準模組406、放置模組408及去氧化物模組404A。控制器410連接至設備(接合器)400B中的拾取模組402、對準模組406、放置模組408、去氧化物模組404A及其他工具且被配置成控制及協調設備(接合器)400B中拾取模組402、對準模組406、放置模組408、去氧化物模組404A 及的其他工具的操作。參照圖11、圖12及圖13中所示的製程來論述拾取模組402、對準模組406、放置模組408及去氧化物模組404A的功能。
參照圖11，將封裝組件100放置於支撐介質28上。拾取模組402(圖10)可包括如圖11中的拾取頭(或真空頭)20，且被用於逐個地拾取封裝組件100並將封裝組件100轉移至封裝組件200。圖12示意性地示出對封裝組件100的轉移。
圖13示出對準製程及去氧化物製程。封裝組件100對準至封裝組件200是由如圖10所示的對準模組406實行。去氧化物製程是由如圖10所示的去氧化物模組404A實行。去氧化物模組404A包括電漿產生器30，電漿產生器30可包括電漿輸出裝置34。根據本揭露的一些實施例，封裝組件100被保持於距封裝組件200為短距離DS1處。距離DS1是小的以提高去氧化物製程中的效率。舉例而言，距離DS1可介於約1毫米與約5毫米之間的範圍內。電漿輸出裝置34瞄準封裝組件100與200之間的間隙。在封裝組件100被保持於封裝組件200之上時，將自形成氣體產生的電漿吹入間隙中，以使封裝組件100及200的電性連接件上的金屬氧化物被還原成金屬。電漿可為大氣壓電漿，所述大氣壓電漿是在一個大氣的壓力下產生。根據本揭露的一些實施例，去氧化物製程被執行達介於約100毫秒與約5秒之間的範圍內的持續時間。
根據本揭露的一些實施例，在將封裝組件100對準至封 裝組件200之前執行去氧化物製程。根據本揭露的替代實施例，在將封裝組件100對準至封裝組件200之後執行去氧化物製程。亦可在將封裝組件100對準至封裝組件200的同時執行去氧化物製程。根據其他實施例，去氧化物製程可包括對準之前、對準期間及對準之後的任何時間段組合。接著，由放置模組408(圖10)將封裝組件100放置於封裝組件200上。接著，執行接合製程。端視接合的預期類型而定，接合製程可採用適當的時間及溫度來對(若存在的)焊料區域進行回焊，或引起電性連接件112與212之間的相互擴散。得到的結構示出於圖9中，且因此此處不再予以贅述。
根據本揭露的一些實施例，在封裝組件100的轉移(圖12)期間，不執行去氧化物製程。根據本揭露的其他實施例，在如圖12所示的轉移製程期間，且在如圖13所示的步驟中均執行去氧化物製程。因此，類似於圖7所示的製程，電漿輸出裝置34可與封裝組件100一起移動，且接著於圖13所示的位置處停止以進一步實行去氧化物製程。此可提高接合製程的通量。
圖14示出根據一些實施例的用於執行晶圓式去氧化物製程22(圖1)的接合器400C的方塊圖。接合器400C用於對封裝組件100執行晶圓式去氧化物製程，且接著對封裝組件進行接合。根據本揭露的一些實施例，接合器400C包括去氧化物模組404B、拾取模組402、對準模組406及放置模組408。控制器410連接至接合器400中的去氧化物模組404B、拾取模組402、對準模組406、 放置模組408及其他工具且被配置成控制及協調接合器400中的去氧化物模組404B、拾取模組402、對準模組406、放置模組408及其他工具的操作。
圖15A及圖15B分別示出根據一些實施例的晶圓式去氧化物製程的剖視圖及俯視圖。相應製程被示出為如圖21中及由圖1中的箭頭所示的製程22、302。在晶圓式氧化物移除製程中，在相同的製程中移除多個封裝組件100的電性連接件上的氧化物。根據本揭露的一些實施例，去氧化物模組404B(圖14)包括電漿產生器30，電漿產生器30可更包括射頻功率產生器32及電漿輸出裝置34。電漿可為大氣壓電漿，所述大氣壓電漿是在一個大氣的壓力下產生。封裝組件100位於支撐介質28(圖15A)上，且可對準至包括多個列及行的陣列中。電漿輸出裝置34的出口可為於一個或多個封裝組件100上延伸的細長狹槽。舉例而言，圖15B示出根據一些實施例的電漿輸出裝置34的一部分的俯視圖。被示出的電漿輸出裝置34可具有細長出口。舉例而言，出口的寬度W1可介於約0.5毫米與約2毫米之間的範圍內。出口的長度L1可介於約10毫米與約40毫米之間的範圍內。箭頭表示電漿輸出裝置34的移動38。隨著電漿輸出裝置34的移動，掃描封裝組件100，以使對應的電性連接件的氧化物被去除。電漿輸出裝置34可逐行掃描以覆蓋支撐介質28上的所有封裝組件100。
圖16A及16B分別示出根據一些實施例的電漿輸出裝置34以及對應的去氧化物製程的剖視圖及俯視圖。相應去氧化物製 程亦被示為如圖21中及由圖1中的箭頭所示的製程22、302。電漿輸出裝置34可為如圖15所示的去氧化物模組404B的一部分。參照圖16B，電漿通道40用於輸出電漿。排氣通道42形成於電漿通道40的外側上。排氣通道42可形成環繞電漿通道40的完整環。排氣通道42的外側上為惰性氣體通道44。惰性氣體通道44可形成環繞排氣通道42的完整環。通道40、42及44彼此分隔開。第一側壁40A(其在俯視圖中可為第一環)界定電漿通道40。在俯視圖中可形成第二環的第二側壁42A與第一側壁40A一起界定排氣通道42。在俯視圖中可形成第三環的第三側壁44A與第二側壁42A一起界定惰性氣體通道44。
圖16A示出如圖16B所示的製程的剖視圖。將用於還原金屬氧化物的電漿(由箭頭表示的電漿46)向封裝組件100引導。惰性氣體通道44用於引導惰性氣體，例如氮氣、氬氣等。惰性氣體48由箭頭表示。惰性氣體48充當電漿及對應的形成氣體的障壁，以使形成氣體不會逃逸至外部環境。排氣通道42用於使惰性氣體及形成氣體再循環，惰性氣體及形成氣體(由箭頭表示的氣體50)。舉例而言，幫浦52可連接至排氣通道42的出口以泵出氣體50。
根據本揭露的一些實施例，外側壁44A具有底部邊緣44A-BE，底部邊緣44A-BE的水平高度略高於封裝組件100的頂表面。側壁40A及42A亦具有高於封裝組件100的頂表面的底端。因此，電漿輸出裝置34可掃描過封裝組件100而不必上下移動。 底部邊緣(或底端)44A-BE與封裝組件100的頂表面之間的垂直距離DS2可小於約2毫米，且可介於約1毫米與約2毫米之間的範圍內。根據本揭露的替代實施例，外側壁44A的底部邊緣(或底端)44A-BE低於封裝組件100的頂表面。因此，如圖16B所示，惰性氣體通道44的大小及形狀被設計為在其中接納至少一個且可能更多個封裝組件100。在對應的去氧化物製程中，電漿輸出裝置34在一些封裝組件100之上移動，且接著降低直至底部邊緣44A-BE低於對應的封裝組件100的頂表面以使封裝組件100被接納於惰性氣體通道44內。接著，在對應的封裝組件上執行去氧化物製程。在完成去氧化物製程之後，將電漿輸出裝置34升高，且接著移動至相鄰的封裝組件100以執行去氧化物製程。重複此製程直至所有封裝組件均經受去氧化物操作。如圖16A及16B所示的去氧化物製程可於具有一個大氣壓的環境中執行。
圖17示出根據一些實施例的晶圓式去氧化物製程的剖視圖。相應去氧化物製程亦被出示為如圖21中及由圖1中的箭頭所示的製程22、302。此製程可藉由在真空中產生電漿58來執行，所述真空是藉由幫浦54產生。於腔室55中執行去氧化物製程，腔室55可具有低於約10毫托的壓力。噴淋頭56用於輸出電漿58，電漿58是使用例如形成氣體而由射頻功率產生器32產生。噴淋頭56及射頻功率產生器32可為圖15所示的去氧化物模組404B的部分。藉由電漿58對多個封裝組件100中的電性連接件同時進行去氧化物操作。根據本揭露的一些實施例，去氧化物製 程的持續時間介於約1秒與10秒之間的範圍內。
圖18示出根據一些實施例的晶圓式去氧化物製程及對應的去氧化物模組404B的剖視圖。相應去氧化物製程亦被示出為如圖21中及由圖1中的箭頭所示的製程22、302。此製程可藉由將氣相還原劑(例如，檸檬酸)或形成氣體引導至腔室59中來執行。腔室59保持在略低於一個大氣壓的壓力下。舉例而言，腔室59中的壓力低於約0.9個大氣壓。腔室59中的氣體可經由通道66被排出。當使用氣相還原劑時，可使用起泡器60來自液相還原劑61產生氣相還原劑。氣相還原劑或形成氣體可藉由噴淋頭63來引導以將封裝組件100中的氧化物還原成金屬。
圖19及圖20示出根據一些實施例的晶圓式去氧化物製程中的中間階段及對應的去氧化物模組404B的剖視圖。相應去氧化物製程亦被示出為如圖21中及由圖1中的箭頭所示的製程22、302。此製程可藉由使用噴嘴62將焊劑68噴塗至封裝組件100上並對封裝組件100進行加熱來執行。焊劑是藉由熱來活化以移除封裝組件100上的氧化物。噴嘴62掃描過所有封裝組件100，以使所有封裝組件100皆被焊劑68噴塗。根據本揭露的一些實施例，在以焊劑噴塗所有封裝組件100之後，將封裝組件100加熱至介於約60℃與約70℃之間的範圍內的溫度。加熱持續時間可介於約30秒與約5分鐘之間的範圍內。在加熱之後，如圖20所示，噴嘴64再次掃描過所有封裝組件100並噴塗清潔流體70，清潔流體70可為去離子水或化學溶液，從而移除焊劑的殘留物。
可使用圖15A及圖15B、圖16A及圖16B、圖17、圖18以及圖19及圖20中的任何設備及製程來執行晶圓式去氧化物製程。在晶圓式去氧化物製程之後，由拾取模組402(圖14)拾取封裝組件100。接著，執行對準以使封裝組件100與下伏的封裝組件200對準(參照圖4)。對準是由對準模組406(圖14)來執行。接著，如圖14所示的放置模組408將封裝組件100放置於封裝組件200上(參照圖4及圖8)。重複拾取及放置製程，以使多個封裝組件100被放置於多個封裝組件200上。接著，執行退火/回焊製程以將封裝組件100與封裝組件200接合。
本揭露的實施例具有一些有利特徵。藉由在放置及接合封裝組件之前執行去氧化物製程，不需要對被接合的封裝組件進行清潔來移除焊劑殘留物。此有利地改善一些封裝的可靠性，因為一些封裝由於其結構而難以移除焊劑殘留物。此外，本揭露的實施例解決了在接合製程期間不能將(若使用的)形成氣體引導至電性連接件以進行去氧化物操作的問題。
根據本揭露的一些實施例，一種方法包括：拾取第一封裝組件；移除所述第一封裝組件的電性連接件上的氧化物層；在移除所述氧化物層之後，將所述第一封裝組件放置於第二封裝組件上；以及將所述第一封裝組件接合至所述第二封裝組件。在實施例中，所述方法更包括：將所述第一封裝組件轉移至所述第二封裝組件，其中所述移除所述氧化物層是在將所述第一封裝組件轉移至所述第二封裝組件的時間段期間執行。在實施例中，所述 移除所述氧化物層包括：自形成氣體產生電漿；以及在拾取所述第一封裝組件之後且在將所述第一封裝組件放置於所述第二封裝組件上之前，以所述電漿對所述第一封裝組件進行處理。在實施例中，所述移除所述氧化物層包括：使所述第一封裝組件靠近所述第二封裝組件；以及將形成氣體的電漿注入所述第一封裝組件與所述第二封裝組件之間的間隙中。在實施例中，所述移除所述氧化物層包括：以形成氣體的電漿來掃描所述第一封裝組件及多個附加封裝組件，其中所述第一封裝組件與所述多個附加封裝組件相同。在實施例中，所述移除所述氧化物層包括：在拾取所述第一封裝組件之前，以形成氣體的電漿對所述第一封裝組件及多個附加封裝組件進行處理，其中所述第一封裝組件與所述多個附加封裝組件是在真空環境中同時被處理。在實施例中，所述移除所述氧化物層包括：在拾取所述第一封裝組件之前，以氣相還原劑對所述第一封裝組件及多個附加封裝組件進行處理，其中所述第一封裝組件與所述多個附加封裝組件是在負壓環境中同時被處理。在實施例中，所述移除所述氧化物層包括：以焊劑噴塗所述第一封裝組件及多個附加封裝組件；同時加熱所述第一封裝組件與所述多個附加封裝組件以移除所述氧化物層；以及清潔所述焊劑的殘留物。
根據本揭露的一些實施例，一種方法包括：拾取第一封裝組件；將所述第一封裝組件向第二封裝組件輸送；在拾取所述第一封裝組件時，移除所述第一封裝組件的電性連接件的表面上 的金屬氧化物層；在移除所述金屬氧化物層之後，將所述第一封裝組件放置於所述第二封裝組件上；以及加熱所述第一封裝組件及所述第二封裝組件以將所述第一封裝組件接合至所述第二封裝組件。在實施例中，所述移除所述金屬氧化物層包括：將形成氣體的電漿引導至所述金屬氧化物層以將所述金屬氧化物層還原成金屬。在實施例中，所述移除所述金屬氧化物層包括：停止所述第一封裝組件的移動，以使當所述第一封裝組件保持靜止時，所述電漿被引導至所述金屬氧化物層。在實施例中，所述移除所述金屬氧化物層包括當所述第一封裝組件正在移動時，將所述電漿引導至所述金屬氧化物層。在實施例中，所述方法更包括：當所述第一封裝組件正在移動時，使電漿輸出裝置與所述第一封裝組件一起移動以將所述電漿引導至所述金屬氧化物層。在實施例中，使用真空頭拾取所述第一封裝組件，且當所述第一封裝組件位於所述真空頭上時，移除所述氧化物層。
根據本揭露的一些實施例，一種設備被配置成將第一封裝組件接合至第二封裝組件，所述設備包括：拾取模組，被配置成拾取所述第一封裝組件；去氧化物模組，被配置成自所述第一封裝組件移除氧化物層；對準模組，被配置成將所述第一封裝組件對準至所述第二封裝組件；以及放置模組，被配置成將所述第一封裝組件放置於所述第二封裝組件上。在實施例中，所述設備更包括：控制器，所述控制器訊號連接至所述拾取模組、所述去氧化物模組、所述對準模組及所述放置模組，且被配置成控制所 述拾取模組、所述去氧化物模組、所述對準模組及所述放置模組的操作。在實施例中，所述去氧化物模組包括電漿輸出裝置，所述電漿輸出裝置被配置成向所述第一封裝組件輸出電漿。在實施例中，所述電漿輸出裝置被配置成在拾取所述第一封裝組件之後向所述第一封裝組件輸出所述電漿。在實施例中，所述電漿輸出裝置被配置成當以與所述第一封裝組件的移動同步的模式移動時輸出所述電漿。在實施例中，所述去氧化物模組被配置成對多個封裝組件執行去氧化物操作。
以上概述了若干實施例的特徵，以使熟習此項技術者可更佳地理解本揭露的各個態樣。熟習此項技術者應知，他們可容易地使用本揭露作為設計或修改其他製程及結構的基礎來施行與本文中所介紹的實施例相同的目的及/或達成與本文中所介紹的實施例相同的優點。熟習此項技術者亦應認識到，此類等效構造並不背離本揭露的精神及範圍，而且他們可在不背離本揭露的精神及範圍的條件下對其作出各種改變、代替及變更。
300:製程流程
311:重複
302、304、306、308、310、312:製程

Claims (10)

  1. 一種接合方法，包括：拾取第一封裝組件；移除所述第一封裝組件的電性連接件上的氧化物層，其中所述移除所述氧化物層包括：當所述第一封裝組件正在移動時，使電漿輸出裝置與所述第一封裝組件一起移動，並將電漿引導至所述氧化物層；在移除所述氧化物層之後，將所述第一封裝組件放置在第二封裝組件上；以及將所述第一封裝組件接合至所述第二封裝組件。
  2. 如申請專利範圍第1項所述的方法，更包括將所述第一封裝組件轉移至所述第二封裝組件，其中所述移除所述氧化物層是在將所述第一封裝組件轉移至所述第二封裝組件的時間段期間執行。
  3. 如申請專利範圍第1項所述的方法，其中所述移除所述氧化物層更包括：自形成氣體產生所述電漿；以及在拾取所述第一封裝組件之後且在將所述第一封裝組件放置在所述第二封裝組件上之前，以所述電漿對所述第一封裝組件進行處理。
  4. 如申請專利範圍第1項所述的方法，其中所述移除所述 氧化物層更包括：使所述第一封裝組件靠近所述第二封裝組件；以及將形成氣體的所述電漿注入所述第一封裝組件與所述第二封裝組件之間的間隙中。
  5. 如申請專利範圍第1項所述的方法，其中所述移除所述氧化物層更包括：以形成氣體的所述電漿來掃描所述第一封裝組件及多個附加封裝組件，其中所述第一封裝組件與所述多個附加封裝組件相同。
  6. 如申請專利範圍第1項所述的方法，其中所述移除所述氧化物層更包括：在拾取所述第一封裝組件之前，以形成氣體的電漿對所述第一封裝組件及多個附加封裝組件進行處理，其中所述第一封裝組件與所述多個附加封裝組件是在真空環境中同時被處理。
  7. 如申請專利範圍第1項所述的方法，其中所述移除所述氧化物層更包括：在拾取所述第一封裝組件之前，以氣相還原劑對所述第一封裝組件及多個附加封裝組件進行處理，其中所述第一封裝組件與所述多個附加封裝組件是在負壓環境中同時被處理。
  8. 一種接合方法，包括：拾取第一封裝組件；將所述第一封裝組件向第二封裝組件輸送； 在拾取所述第一封裝組件時，移除所述第一封裝組件的電性連接件的表面上的金屬氧化物層，其中所述移除所述金屬氧化物層包括：當所述第一封裝組件正在移動時，使電漿輸出裝置與所述第一封裝組件一起移動，並將形成氣體的電漿引導至所述金屬氧化物層；在移除所述金屬氧化物層之後，將所述第一封裝組件放置在所述第二封裝組件上；以及加熱所述第一封裝組件及所述第二封裝組件以將所述第一封裝組件接合至所述第二封裝組件。
  9. 如申請專利範圍第8項所述的方法，其中：將所述形成氣體的所述電漿引導至所述金屬氧化物層以將所述金屬氧化物層還原成金屬。
  10. 一種接合設備，被配置成將第一封裝組件接合至第二封裝組件，所述接合設備包括：拾取模組，被配置成拾取所述第一封裝組件；去氧化物模組，被配置成自所述第一封裝組件移除氧化物層，所述去氧化物模組包括：電漿通道，被配置成輸出電漿；以及惰性氣體通道，被配置成引導惰性氣體，所述惰性氣體通道形成於所述電漿通道的外側上且環繞所述電漿通道； 對準模組，被配置成將所述第一封裝組件對準至所述第二封裝組件；以及放置模組，被配置成將所述第一封裝組件放置在所述第二封裝組件上。
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