CN105009272A - 用于增强处理均匀性和减少基板滑动的基座 - Google Patents

用于增强处理均匀性和减少基板滑动的基座 Download PDF

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Publication number
CN105009272A
CN105009272A CN201480003813.4A CN201480003813A CN105009272A CN 105009272 A CN105009272 A CN 105009272A CN 201480003813 A CN201480003813 A CN 201480003813A CN 105009272 A CN105009272 A CN 105009272A
Authority
CN
China
Prior art keywords
substrate
support
groove
reclined
support element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480003813.4A
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English (en)
Chinese (zh)
Inventor
甘加达尔·希拉瓦特
马哈德夫·乔希
青木裕司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN202011019392.8A priority Critical patent/CN112201594B/zh
Publication of CN105009272A publication Critical patent/CN105009272A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201480003813.4A 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座 Pending CN105009272A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011019392.8A CN112201594B (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361788920P 2013-03-15 2013-03-15
US61/788,920 2013-03-15
US14/197,699 2014-03-05
US14/197,699 US9799548B2 (en) 2013-03-15 2014-03-05 Susceptors for enhanced process uniformity and reduced substrate slippage
PCT/US2014/021639 WO2014149957A1 (en) 2013-03-15 2014-03-07 Susceptors for enhanced process uniformity and reduced substrate slippage

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202011019392.8A Division CN112201594B (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座

Publications (1)

Publication Number Publication Date
CN105009272A true CN105009272A (zh) 2015-10-28

Family

ID=51524050

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480003813.4A Pending CN105009272A (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座
CN202011019392.8A Active CN112201594B (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202011019392.8A Active CN112201594B (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座

Country Status (6)

Country Link
US (1) US9799548B2 (https=)
JP (1) JP6873696B2 (https=)
KR (1) KR102335921B1 (https=)
CN (2) CN105009272A (https=)
TW (1) TWI631660B (https=)
WO (1) WO2014149957A1 (https=)

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SG11201608905XA (en) * 2014-05-21 2016-12-29 Applied Materials Inc Thermal processing susceptor
GB2534146B (en) * 2015-01-14 2017-06-28 Sky Tech Inc Wafer carrier tray
JP2018026503A (ja) * 2016-08-12 2018-02-15 株式会社Sumco サセプタ、エピタキシャル成長装置、及びエピタキシャルウェーハの製造方法
JP6403106B2 (ja) * 2016-09-05 2018-10-10 信越半導体株式会社 気相成長装置
KR102540125B1 (ko) * 2017-08-30 2023-06-05 주성엔지니어링(주) 기판안치수단 및 기판처리장치
US10755955B2 (en) * 2018-02-12 2020-08-25 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
CN115704108B (zh) * 2021-08-09 2026-03-13 深圳市鹏芯微集成电路制造有限公司 预热环和基板处理装置
JP7774416B2 (ja) 2021-10-20 2025-11-21 東京エレクトロン株式会社 基板載置方法および基板載置機構

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JPH08277193A (ja) * 1995-03-31 1996-10-22 Sumitomo Sitix Corp 気相成長装置用サセプター
JPH0952792A (ja) * 1995-08-11 1997-02-25 Hitachi Cable Ltd 半導体成長装置における基板ホルダ
EP1132950A1 (en) * 1998-10-19 2001-09-12 Applied Materials, Inc. Wafer support of semiconductor manufacturing system
JP2003289045A (ja) * 2002-03-28 2003-10-10 Shin Etsu Handotai Co Ltd サセプタ、エピタキシャルウェーハの製造装置および製造方法
JP2004119859A (ja) * 2002-09-27 2004-04-15 Shin Etsu Handotai Co Ltd サセプタ、半導体ウェーハの製造装置及び製造方法
US20090283035A1 (en) * 2006-10-05 2009-11-19 Michael Bucci System and method for supporting an object during application of surface coating
CN101772836A (zh) * 2007-06-19 2010-07-07 Memc电子材料有限公司 用于提高产量和减少晶片损坏的基座
US20120146191A1 (en) * 2009-08-31 2012-06-14 Showa Denko K.K. Apparatus and method for manufacturing compound semiconductor, and compound semiconductor manufactured thereby
CN102763212A (zh) * 2010-02-26 2012-10-31 应用材料公司 用于沉积工艺的方法和设备

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Publication number Priority date Publication date Assignee Title
JPH08277193A (ja) * 1995-03-31 1996-10-22 Sumitomo Sitix Corp 気相成長装置用サセプター
JPH0952792A (ja) * 1995-08-11 1997-02-25 Hitachi Cable Ltd 半導体成長装置における基板ホルダ
EP1132950A1 (en) * 1998-10-19 2001-09-12 Applied Materials, Inc. Wafer support of semiconductor manufacturing system
JP2003289045A (ja) * 2002-03-28 2003-10-10 Shin Etsu Handotai Co Ltd サセプタ、エピタキシャルウェーハの製造装置および製造方法
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US20090283035A1 (en) * 2006-10-05 2009-11-19 Michael Bucci System and method for supporting an object during application of surface coating
CN101772836A (zh) * 2007-06-19 2010-07-07 Memc电子材料有限公司 用于提高产量和减少晶片损坏的基座
US20120146191A1 (en) * 2009-08-31 2012-06-14 Showa Denko K.K. Apparatus and method for manufacturing compound semiconductor, and compound semiconductor manufactured thereby
CN102763212A (zh) * 2010-02-26 2012-10-31 应用材料公司 用于沉积工艺的方法和设备

Also Published As

Publication number Publication date
US9799548B2 (en) 2017-10-24
TW201448111A (zh) 2014-12-16
KR102335921B1 (ko) 2021-12-03
CN112201594B (zh) 2024-09-20
CN112201594A (zh) 2021-01-08
TWI631660B (zh) 2018-08-01
JP6873696B2 (ja) 2021-05-19
JP2016518699A (ja) 2016-06-23
KR20150130261A (ko) 2015-11-23
US20140265091A1 (en) 2014-09-18
WO2014149957A1 (en) 2014-09-25

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20151028

RJ01 Rejection of invention patent application after publication