CN105006467A - 金属接触结构及其形成方法 - Google Patents
金属接触结构及其形成方法 Download PDFInfo
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- CN105006467A CN105006467A CN201410316858.9A CN201410316858A CN105006467A CN 105006467 A CN105006467 A CN 105006467A CN 201410316858 A CN201410316858 A CN 201410316858A CN 105006467 A CN105006467 A CN 105006467A
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- silicide
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 155
- 239000002184 metal Substances 0.000 title claims abstract description 155
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 45
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 38
- 229910017052 cobalt Inorganic materials 0.000 claims description 33
- 239000010941 cobalt Substances 0.000 claims description 33
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 29
- 238000009792 diffusion process Methods 0.000 claims description 16
- 229910052715 tantalum Inorganic materials 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910020517 Co—Ti Inorganic materials 0.000 claims description 4
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 claims description 4
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 130
- 238000005229 chemical vapour deposition Methods 0.000 description 21
- 238000005240 physical vapour deposition Methods 0.000 description 18
- 239000004020 conductor Substances 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 210000004483 pasc Anatomy 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 206010010144 Completed suicide Diseases 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000663 remote plasma-enhanced chemical vapour deposition Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
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- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
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- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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Abstract
本发明提供了一种半导体器件及其形成方法。该半导体器件包含位于衬底上方的硅化物层、位于由衬底上方的介电层形成的开口中的金属插塞、位于金属插塞和介电层之间及金属插塞和硅化物层之间的第一金属层、位于第一金属层上方的第二金属层以及位于第一金属层和第二金属层之间的非晶层。本发明还公开了金属接触结构及其形成方法。
Description
技术领域
本发明涉及半导体领域,尤其涉及金属接触结构及其形成方法。
背景技术
半导体器件在例如个人电脑、手机、数码相机和其它电子设备的多种电子应用中使用。随着技术进步,对于更小的、性能提高的半导体器件的需求增加。当部件密度增加时,导线的宽度、以及互连结构的导线之间的间距也需要按比例减小。
接触件用以在半导体结构中的不同部件中或不同部件之间形成电连接。例如,接触件用以将一个金属层连接至另一金属层,否则这些金属层会诸如通过将金属层分隔开的绝缘材料或介电材料而彼此电隔离。
发明内容
本发明一方面提供一种半导体器件,包括:位于衬底上方的硅化物层;位于由所述衬底上方的介电层形成的开口中的金属插塞;位于所述金属插塞和所述介电层之间及所述金属插塞和所述硅化物层之间的第一金属层;位于所述第一金属层上方的第二金属层;以及位于所述第一金属层和所述第二金属层之间的非晶层。
优选地,所述第一金属层包含钴(Co)或镍(Ni)中的至少一个。
优选地,所述第一金属层具有在约30埃至约250埃的范围内的厚度。
优选地,所述硅化物层包含硅化钴(CoSi)、硅化镍(NiSi)或它们的组合,且具有在约30埃至约200埃的范围内的厚度。
优选地,所述第二金属层为金属扩散阻挡层。
优选地,所述金属扩散阻挡层包含钽(Ta)、钛(Ti)或它们的组合。
优选地,所述第二金属层具有在约20埃至约200埃的范围内的厚度。
优选地,所述非晶层包含Co-Ta、Co-Ti、Ni-Ta、Ni-Ti或它们的组合。
优选地,所述金属插塞包含铜。
优选地,半导体器件还包含:位于所述金属插塞和所述第二金属层之间的第三金属层,其中,所述第三金属层包含钴(Co)、钌(Ru)或它们的组合。
优选地,半导体器件还包括位于所述金属头与所述第二金属层之间的种子层。
本发明另一方面还提供一种半导体器件,包括:位于由包含硅的衬底上方的介电层形成的开口中的钴(Co)层或镍(Ni)层;位于所述钴层或镍层上方的铜扩散阻挡层;位于所述钴层或镍层与所述铜扩散阻挡层之间的非晶层;位于所述开口中的包含铜的金属插塞;以及位于所述金属插塞和所述衬底之间的硅化物层,所述硅化物层包含硅化钴(CoSi)或硅化镍(NiSi)。
优选地,所述铜扩散阻挡层包含钽(Ta)、钛(Ti)或它们的组合。
优选地,所述非晶层包含Co-Ta、Co-Ti、Ni-Ta、Ni-Ti或它们的组合。
优选地,半导体器件还包括:位于所述金属插塞和所述铜扩散阻挡层之间的钴(Co)层或钌(Ru)层。
本发明又一方面还提供一种用于形成半导体器件的方法,包括:在由衬底上方的介电层形成的开口中形成第一金属层;在所述开口中于所述第一金属层上方形成第二金属层;在所述开口中于所述第二金属层上方形成第三金属层;在所述开口中于所述第三金属层上方形成金属插塞;以及对所述半导体器件热处理以使所述第一金属层与所述第二金属层反应,以在所述第一金属层与所述第二金属层之间形成非晶层并在所述第一金属层与所述衬底之间形成硅化物层。
优选地,形成所述第一金属层包含通过物理气相沉积(PVD)沉积钴(Co)或镍(Ni)中的至少一个。
优选地,形成所述第二金属层包含通过物理气相沉积(PVD)沉积钽(Ta)或钛(Ti)中的至少一个。
优选地,形成所述第三金属层包含通过原子层沉积(ALD)或化学气相沉积(CVD)中的至少一个沉积钴(Co)或钌(Ru)中的至少一个
优选地,所述退火包含将所述半导体器件暴露于约200摄氏度至约800摄氏度之间的温度持续约20秒至约1000秒的时间。
附图说明
当结合附图进行阅读时,根据下面详细的描述可以更好地理解本发明。应该强调的是,根据工业中的标准实践,各种部件没有按比例绘制并且仅仅用于说明的目的。实际上,为了清楚的讨论,各种部件的尺寸可以被任意增加或减少。
图1为示出根据本发明的多个方面制造半导体器件的方法的流程图;以及
图2至图6示出了根据本发明的多个方面的处于不同制造阶段的半导体器件的示意性截面图。
具体实施方式
在以下描述中,阐述了许多特定的细节以全面理解本公开的实施例。然而,本领域的普通技术人员应意识到没有这些特定的细节也可实施本公开的实施例。在一些例子中,没有详细描述公知的结构和工艺从而避免了本公开实施例不必要的模糊。
整个本说明书中引用“一个实施例”或“某个实施例”意味着:关于所述实施例描述的特定部件、结构或特征包括在本公开的至少一个实施例中。因此在本说明书的各个位置出现的短语“在一个实施中”或“在某个实施例中”不一定全部指同一个实施例。而且,在一个或多个实施例中可以以任何合适的方式组合特定部件、结构或特征。应理解,以下附图没有按比例绘制;而这些附图只是为了图示。
图1为根据本发明的多个方面的制造半导体器件200的方法100的流程图。图2至图6示出了根据图1的方法100的实施例的处于不同制造阶段的半导体器件200的示意性截面图。半导体器件200可包括在微处理器、存储器单元和/或其它集成电路(IC)中。应当指出,图1的方法并不产生完整的半导体器件200。完整的半导体器件200可例如使用互补金属氧化物半导体(CMOS)技术工艺制造。因此,应当理解,在图1的方法100之前、期间和/或之后可提供其它工艺,并且,本文仅对一些其它工艺作简要描述。同样,为了更好的理解本公开,简化了图1至图6。例如,尽管图中示出了半导体器件200,但应当理解,IC可包括许多其它器件,这些器件包括晶体管、电阻器、电容器、电感器、保险丝等。
参照图1和图2,方法100开始于步骤102,其中,在衬底202上方的介电层204中形成开口206。在一些实施例中,硅化物层在前段工艺(FEOL)互连结构中形成于介电层204下方和衬底202上方。半导体衬底202为半导体集成电路制造中所使用的衬底,且集成电路可在其上和/或其中形成。术语“半导体衬底”定义为表示包含半导体材料的任意结构,例如,含有(或不含)外延层的硅衬底、包含掩埋绝缘层的绝缘体上硅(SOI)衬底或含有硅锗层的衬底。本文所使用的术语“集成电路”指的是包含多个独立电路元件的电子电路,电路元件诸如为晶体管、二极管、电阻器、电容器、电感器以及其它有源半导体器件和无源半导体器件。形成在半导体衬底202中和/或形成在半导体衬底202上的导电区域为导电路径的一部分,且导电区域具有可通过诸如化学机械抛光的平坦化工艺处理的暴露表面。例如,用于导电区域的合适的材料可包括但不限于铜、铝、铜合金或其它轻便的导电材料。铜互连层可为半导体器件的第一或任何后续的金属互连层。
介电层204可为单层或多层结构。在一些实施例中,介电层204的厚度随着所应用的技术变化,例如,厚度约为1000埃至约30000埃。在一些实施例中,介电层204为氧化硅、掺杂碳的氧化硅、具有低于约4.0的介电常数(k值)的相对较低介电常数的介电材料或它们的组合。在一些实施例中,构成介电层204的材料包括低k介电材料、极低k介电材料、多孔低k介电材料和它们的组合。术语“低k”意在定义介电材料的介电常数为3.0或更小。术语“极低k(ELK)”意味着介电常数为2.5或更小且优选在1.9与2.5之间。术语“多孔低k”指的是介电材料的介电常数为2.0或更小且优选为1.5或更小。根据实施例可采用多种低k材料,例如,旋涂无机介电材料、旋涂有机介电材料、多孔介电材料、有机聚合物、有机硅玻璃、氟硅玻璃(FSG)(掺氟二氧化硅(SiOF)系材料)、HSQ(氢倍半硅氧烷)系材料、MSQ(甲基倍半硅氧烷)系材料或多孔有机系材料。在一些实施例中,介电层206通过多种技术中任一技术沉积,诸如化学气相沉积(CVD)、物理气相沉积(PVD)、原子层沉积(ALD)、远距电浆增强化学气相沉积(RPECVD)、液态源雾化化学气相沉积(LSMCD)、涂覆、旋涂或适用于在衬底上形成薄膜层的另一工艺。
开口206为在介电层204中图案化的示例性单镶嵌开口。开口206可通过蚀刻形成。在一些实施例中,开口206使用湿法蚀刻工艺形成。在其它实施例中,开口206采用干法蚀刻工艺形成。
参照图1和图3,方法100进行至步骤104,其中,在开口206中形成第一金属层208以布满开口206的侧壁和底部及介电层204上方。在随后的热退火工艺中,第一金属层208与半导体器件200的有源区域中的硅反应以形成硅化物接触层216(参见图6)。在一些实施例中,第一金属层208包括钴(Co)。在其它实施例中,第一金属层208包括镍(Ni)。钴与半导体器件200的有源区域(例如,源极、漏极和栅极)中的硅反应以形成硅化钴(CoSi、Co2Si、CoSi2)。硅化钴具有足够低的电阻以在硅的晶体管有源区域和金属插塞(诸如铜插塞)之间形成有效的电接触。由于相较于TiSi2的晶粒尺寸的较小晶粒尺寸,硅化钴接触件同样易于形成,尤其是在0.18μm和更小的深亚微米结构中形成。在一些实施例中,第一金属层208的厚度在约30埃至约250埃的范围内。在一些实施例中,第一金属层208通过物理气相沉积(PVD)、化学气相沉积(CVD)、等离子体增强CVD(PECVD)、低压CVD(LPCVD)或其它熟知的沉积技术沉积。
现参照图1和图3,方法100进行至步骤106,其中,在开口206中于第一金属层208上方形成第二金属层210。第二金属层210可用作金属扩散阻挡层,以防止铜从铜插塞向下面的硅化物层中扩散。这种扩散在半导体器件200的热处理期间发生,在此期间铜扩散到硅化物层中,这之后会降低半导体器件200的可靠性。在一些实施例中,在后续热退火处理中,第二金属层210与第一金属层208反应以在两者之间形成非晶层218(参见图6)。非晶层218防止铜扩散到硅化物层中并改善半导体器件200的热稳定性。在一些实施例中,第二金属层210包含钽(Ta)。在一些实施例中,第二金属层210包含钛(Ti)。在其它实施例中,第二金属层210包含钽(Ta)。在一些实施例中,第二金属层210具有在约20埃至约200埃的范围内的厚度。在一些实施例中,第二金属层210通过物理气相沉积(PVD)、化学气相沉积(CVD)、等离子体增强CVD(PECVD)、低压CVD(LPCVD)或其它熟知的沉积技术沉积。
参照图1和图4,方法100进行至步骤108,其中,在开口206中于第二金属层210上方形成第三金属层212。第三金属层212可用作阻挡物以防止随后形成的导体(诸如铜插塞)扩散入下面的介电层204中。第三金属层212还可用作间隙填充改进层,因此第三金属层212具有小于底部厚度的侧壁厚度,从而避免否则可能在高纵横比的结构中形成的空隙。在一些实施例中,第三金属层212包括钴(Co)、钌(Ru)或它们的组合。例如,钴在20摄氏度的电阻率约为62.4nΩ-m,其低于包括Ta、Ti、W或TaN阻挡层的典型扩散阻挡层的电阻率。因此,可获得低电阻的共形保护层212以减少RC延迟问题。
在一些实施例中,通过采用化学气相沉积(CVD)、原子层沉积(ALD)或其它熟知的共形沉积技术来将第三金属层212共形沉积在第二金属层210之上。如上所述,共形沉积第三金属层212以在随后的开口填充处理期间避免间隙填充问题。在一些实施例中,第三金属层212以在约10埃至约50埃的范围内的侧壁厚度212b沉积在第二金属层210的侧壁上。在一些实施例中,第三金属层212以在约10埃至约200埃的范围内的底部厚度212a沉积在第二金属层210的底部上。
仍参照图1和图4,在第三金属层212的上方形成导体214A以填充开口206。在一些实施例中,该导体成形为前段工艺(FEOL)互连结构中的金属插塞。在一些实施例中,导体214A通过电化学镀(ECP)工艺沉积。在一些实施例中,导体214A至少包含主要金属元素,例如铜(Cu)。在一些实施例中,导体214A还包含附加的金属元件,诸如钽、铟、锡、锌、锰、铬、钛、锗、锶、铂、镁、铝或锆。
在一些实施例中,在形成导体214A之前形成导电种子层(未示出)。在一些实施例中,导电种子层包含诸如铜的纯金属。在一些实施例中,导电种子层至少包含例如铜(Cu)的主要金属元素,正如导体214A所包含的一样。在一些实施例中,导电种子层为含铜层,诸如铜铝合金(CuAl)、铜锰合金(CuMn)等。在一些实施例中,通过使用物理气相沉积(PVD)或其他熟知的沉积技术形成导电种子层。在一些实施例中,导电种子层具有约为100埃至约450埃的厚度。
参照图1和图5,方法100进行至步骤110,其中,移除导体214A的位于介电层204上方的部分以形成金属插塞214B。在一些实施例中,该移除工艺为化学机械抛光(CMP)工艺,执行该工艺以移除导电体214A、第三金属层212、第二金属层210和第一金属层208的位于开口206外部的超出部分,从而暴露出介电层204的顶部表面并获得了平坦化表面。在一些实施例中,金属插塞214B为铜插塞。
参照图1和图6,方法100进行至步骤112,其中,在半导体器件200上执行热处理215。在一些实施例中,热处理215包括退火处理。在一个实施例中,以约200摄氏度至约800摄氏度范围内的温度执行热处理215。在一个实施例中,持续执行热处理215约20秒至约1000秒的时间。在一个实施例中,在氩气环境下以约770托(Torr)至约850托范围内的压力执行热处理215。在一些实施例中,采用快速热退火(RTA)工艺、化学气相沉积(CVD)工艺、热板设备或任意多种热处理技术来执行热处理215。
在热工艺期间和/或之后,在一些实施例中,第一金属层208与半导体器件200的有源区域中的硅反应以形成硅化物层216。在一些实施例中,第一金属层208中的钴(Co)部分地或全部地扩散到衬底202的有源区域(例如,源极、漏极和栅极)中的硅中。在一些实施例中,扩散的钴与硅反应以形成硅化钴(CoSi、Co2Si、CoSi2)。硅化钴具有足够低的电阻以在硅的晶体管有源区域和金属插塞214B之间形成有效电接触。在一些实施例中,第一金属层208中的镍(Ni)部分地或全部地扩散到有源区域中的硅中。在一些实施例中,扩散的镍与硅反应以形成硅化镍(NiSi)。在一个实施例中,硅化物层216具有在约30埃至约200埃的范围内的厚度。
在热处理215期间和/或之后,在一些实施例中,第二金属层210与第一金属层208反应以在第二金属层210和第一金属层208之间形成非晶层218。由于非晶层218不具有晶界,非晶层218防止铜从铜插塞214B扩散到硅化物层216并且还改善了半导体器件200的热稳定性。在一些实施例中,非晶层218包含Co-Ta、Co-Ti、Ni-Ta、Ni-Ti或它们的组合。在一些实施例中,非晶层218具有在约3埃至约30埃的范围内的厚度。
可执行其它处理。例如,可形成附加的介电层和金属化层以将多种元件、接触垫互连以及可形成钝化层等以完成半导体器件200。
本发明的一个或多个实施例的优势可包括下述中的一个或多个。
在一个或多个实施例中,包含硅化钴或硅化镍的硅化物层具有足够低的电阻以在衬底的晶体管有源区域和铜插塞之间形成有效电接触。
在一个或多个实施例中,非晶层防止铜扩散到硅化物层并改善半导体器件的热稳定性。
在一个或多个实施例中,第三金属层共形沉积到通孔中,在随后的开口填充处理中避免了间隙填充问题。
在一个或多个实施例中,第三金属层包括具有低电阻的钴或钌以减小接触电阻和RC延迟问题,从而改善器件性能。
已经对本发明的各个方面进行了描述。根据本描述的一个方面,提供了一种半导体器件。该半导体器件包括位于衬底上方的硅化物层、位于由衬底上方的介电层形成的开口中的金属插塞、位于金属插塞和介电层之间及金属插塞与硅化物层之间的第一金属层。该半导体器件还包括位于第一金属层上方的第二金属层、以及位于第一金属层和第二金属层之间的非晶层。
根据本描述的另一方面,半导体器件包括钴(Co)层或镍(Ni)层,其位于由包含硅的衬底上方的介电层形成的开口中。该半导体器件还包括位于钴层或镍层上方的铜扩散阻挡层、位于钴层或镍层与铜扩散阻挡层之间的非晶层、位于开口中的包含铜的金属插塞、以及位于金属插塞与衬底之间的硅化物层,该硅化物层包含硅化钴(CoSi)或硅化镍(NiSi)。
根据本描述的又一方面,一种形成半导体器件的方法包括在由衬底上方的介电层形成的开口中形成第一金属层。在该开口中于第一金属层上方形成第二金属层。第三金属层在该开口中于第二金属层上方形成。在该开口中于第三金属层上方形成金属插塞。该半导体器件经历热处理以使第一金属层与第二金属层反应,以在两者之间形成非晶层并在第一金属层与衬底之间形成硅化物层。
在前面的详细描述中,已经描述了多个实施例。然而,对本领域普通技术人员显而易见的是,可对其进行各种修改、组织、处理和变化而不偏离本公开的更广泛的精神和范围。因此,说明和附图被认作是示意性的而非限制性的。应当理解,本发明的实施例能够使用多种其它组合和环境,且能够在权利要求的范围内及其等效范围内进行改变或修改。
Claims (10)
1.一种半导体器件,包括:
位于衬底上方的硅化物层;
位于由所述衬底上方的介电层形成的开口中的金属插塞;
位于所述金属插塞和所述介电层之间及所述金属插塞和所述硅化物层之间的第一金属层;
位于所述第一金属层上方的第二金属层;以及
位于所述第一金属层和所述第二金属层之间的非晶层。
2.根据权利要求1所述的半导体器件,其中,所述第一金属层包含钴(Co)或镍(Ni)中的至少一个。
3.根据权利要求1所述的半导体器件,其中,所述第一金属层具有在约30埃至约250埃的范围内的厚度。
4.根据权利要求1所述的半导体器件,其中,所述硅化物层包含硅化钴(CoSi)、硅化镍(NiSi)或它们的组合,且具有在约30埃至约200埃的范围内的厚度。
5.根据权利要求1所述的半导体器件,其中,所述第二金属层为金属扩散阻挡层。
6.根据权利要求5所述的半导体器件,其中,所述金属扩散阻挡层包含钽(Ta)、钛(Ti)或它们的组合。
7.根据权利要求1所述的半导体器件,其中,所述第二金属层具有在约20埃至约200埃的范围内的厚度。
8.根据权利要求1所述的半导体器件,其中,所述非晶层包含Co-Ta、Co-Ti、Ni-Ta、Ni-Ti或它们的组合。
9.一种半导体器件,包括:
位于由包含硅的衬底上方的介电层形成的开口中的钴(Co)层或镍(Ni)层;
位于所述钴层或镍层上方的铜扩散阻挡层;
位于所述钴层或镍层与所述铜扩散阻挡层之间的非晶层;
位于所述开口中的包含铜的金属插塞;以及
位于所述金属插塞和所述衬底之间的硅化物层,所述硅化物层包含硅化钴(CoSi)或硅化镍(NiSi)。
10.一种用于形成半导体器件的方法,包括:
在由衬底上方的介电层形成的开口中形成第一金属层;
在所述开口中于所述第一金属层上方形成第二金属层;
在所述开口中于所述第二金属层上方形成第三金属层;
在所述开口中于所述第三金属层上方形成金属插塞;以及
对所述半导体器件热处理以使所述第一金属层与所述第二金属层反应,以在所述第一金属层与所述第二金属层之间形成非晶层并在所述第一金属层与所述衬底之间形成硅化物层。
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