CN104953004A - High-reliability LAMP light-emitting diode packaging technology - Google Patents
High-reliability LAMP light-emitting diode packaging technology Download PDFInfo
- Publication number
- CN104953004A CN104953004A CN201410120467.XA CN201410120467A CN104953004A CN 104953004 A CN104953004 A CN 104953004A CN 201410120467 A CN201410120467 A CN 201410120467A CN 104953004 A CN104953004 A CN 104953004A
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- Prior art keywords
- led
- coating
- line tail
- support
- point
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000012536 packaging technology Methods 0.000 title abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 19
- 238000000576 coating method Methods 0.000 claims abstract description 19
- 238000007789 sealing Methods 0.000 claims abstract description 5
- 241000218202 Coptis Species 0.000 claims description 13
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 5
- 239000011265 semifinished product Substances 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract 3
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 239000003292 glue Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 238000003466 welding Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000010009 beating Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 208000010392 Bone Fractures Diseases 0.000 description 1
- 206010017076 Fracture Diseases 0.000 description 1
- 208000013201 Stress fracture Diseases 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
- H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/48997—Reinforcing structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/85951—Forming additional members, e.g. for reinforcing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to high-reliability LAMP light-emitting diode packaging technology. Normal die bonding and wire bonding are carried out on a LED chip, a conductive coating material is used for coating and covering a wire end after wire bonding, the covering material is baked and cured after covering, the LED wire end support and the conductive coating material are firmly bonded together, after baking, glue sealing, pin cutting and testing are normally carried out, and thus high-reliability LAMP light-emitting diode packaging is completed. When the method is used for packaging the LED, strength of the LED wire end can be greatly enhanced, LED failure caused by wire end breaking and falling during the LED use process can be avoided, and reliability of the LED is enhanced.
Description
technical fieldthe present invention relates to a kind of high reliability LAMP light-emitting diode packaging technology
background technologylAMP light-emitting diode is a kind of comparatively traditional LED package form, and use field numerous, up to the present use amount is still very huge.LAMP encapsulation adopts the technique of gold thread bonding welding, is connected by LED chip with gold thread with support bonding, forms loop.
Tradition bonding welding procedure, is divided into A according to structure, B, C, D, E, 5 points (as accompanying drawing 1) by the gold thread connecting chip and support.Wherein D, E two points are two points the most fragile in bonding wire, and terminal client is in welding use procedure, and LED is heated after internal expansion and pulls inner gold thread structure, easily causes the fracture of D point or E point and support to come off, thus causes LED to lose efficacy.In order to reduce the phenomenons such as D, E point ruptures/comes off in the welding of tradition bonding, have employed the welding manners such as BSOB and BBOS.BSOB, first on support, make a call to a gold goal, then beat on gold goal by E dotted line tail, to improve the adhesion strength of E point and support, but gold thread D point is still exposed to outside, is still subject to stress fracture; BBOS; first gold thread line tail is beaten on support; make a call to a gold goal above online tail again and push down line tail; play the effect of protection D point and E point; but owing to beating the limitation of gold goal technique; gold goal is more difficult to be covered completely by D point and E point, and when beating gold goal, bonding wire porcelain mouth can produce certain compression to the D point of line tail, reduces the bonding strength of D point.
summary of the inventionin order to overcome traditional LAMP light-emitting diode, gold thread D, E point easily ruptures in welding process, come off the problem such as cause that LED lost efficacy, and proposes a kind of high reliability LAMP light-emitting diode packaging technology:
A kind of LED encapsulation structure, wherein comprises LED support, at least one LED chip, at least one gold thread, and a line tail overlay.Adopt the normal die bond bonding wire of LED support, conduction coating is used the coating of LED line tail to be covered to the semi-finished product after bonding wire, carrying out baking after coating makes coating solidification LED line tail and support be combined closely, normal sealing, cutting, test after baking.Complete low high reliability LAMP LED package.
LED wafer, as accompanying drawing 1, is 3. fixed to LED support by bonder and 1. goes up, normally toast after die bond by concrete operation method, and baking condition 150 DEG C of 2HRS, are bonded on chip and support by bonding equipment by gold thread after baking, the connection between conducting chip and support; Use conduction coating 9. 8. 7. the D point of LED line tail to be applied covering with E point to the semi-finished product after bonding wire, to covering baking-curing after covering, LED line tail support and conduction coating are firmly combined, normal sealing, cutting, test after baking.Complete low high reliability LAMP LED package.
The advantage of high reliability LAMP light-emitting diode packaging technology:
1, use covering D point more fragile for LED line tail, E point to be covered solidification completely, less gold thread line tail thermal stress pullling D, E point in LED use procedure, promote the intensity of LED internal structure
2, covering adopts electric conducting material (silver slurry, copper slurry etc.), even if LED in use, excessive line tail D, E point that causes of stress ruptures, comes off, and covering still by gold thread and support conducting, can guarantee that LED normally works.
embodimentas shown in Figure 1,3. LED wafer is fixed to LED support by bonder and 1. goes up, normally toast after die bond, baking condition 150 DEG C of 2HRS, are bonded on chip and support by bonding equipment by gold thread after baking, the connection between conducting chip and support; Conduction coating is used 9. 8. 7. the D point of LED line tail to be applied covering with E point to the semi-finished product after bonding wire, to covering baking-curing after covering, baking condition 150 DEG C of 2HRS, make LED line tail support and conduction coating firmly combine, normal sealing, cutting, test after baking.Complete low high reliability LAMP LED package.
Accompanying drawing explanation
Fig. 1 uses conducting objects that the coating of line tail is covered schematic diagram after normal bonding wire
Fig. 2 is traditional conventional bonding wire mode schematic diagram
Fig. 3 is BSOB bonding wire mode schematic diagram
Fig. 4 is BBOS bonding wire mode schematic diagram
Mark in figure is illustrated:
1. %2 LED support
2. %2 elargol
3. %2 LED chip
4. %2 LED A point
5. %2 LED B point
6. %2 LED C point
7. %2 LED D point
8. %2 LED E point
9. %2 line tail conduction covering
10. gold goal bottom %2 line tail
%2 line tail top-gold.
Claims (3)
1. a LED encapsulation structure, wherein comprises LED support, at least one LED chip, at least one gold thread, and a line tail overlay.Adopt the normal die bond bonding wire of LED support, conduction coating is used the coating of LED line tail to be covered to the semi-finished product after bonding wire, carrying out baking after coating makes coating solidification LED line tail and support be combined closely, normal sealing, cutting, test after baking.Complete low high reliability LAMP LED package.
2. LED encapsulation structure as claimed in claim 1, is characterized in that: LED line tail D point, E point need cover by coating completely.
3. LED encapsulation structure as claimed in claim 1, is characterized in that: coating is conduction coating, can be the mixture of the conducting metal such as silver powder, copper powder and resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410120467.XA CN104953004A (en) | 2014-03-27 | 2014-03-27 | High-reliability LAMP light-emitting diode packaging technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410120467.XA CN104953004A (en) | 2014-03-27 | 2014-03-27 | High-reliability LAMP light-emitting diode packaging technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104953004A true CN104953004A (en) | 2015-09-30 |
Family
ID=54167532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410120467.XA Pending CN104953004A (en) | 2014-03-27 | 2014-03-27 | High-reliability LAMP light-emitting diode packaging technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104953004A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113540330A (en) * | 2021-07-12 | 2021-10-22 | 格力电器（合肥）有限公司 | Light-emitting diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1355571A (en) * | 2000-11-23 | 2002-06-26 | 诠兴开发科技股份有限公司 | Packaging method for LED |
| CN102130280A (en) * | 2010-12-31 | 2011-07-20 | 浙江名芯半导体科技有限公司 | LED (Light Emitting Diode) package solder joint structure and process |
| CN203179954U (en) * | 2013-02-06 | 2013-09-04 | 华宏光电子(深圳)有限公司 | LED welding wire packaging structure |
-
2014
- 2014-03-27 CN CN201410120467.XA patent/CN104953004A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1355571A (en) * | 2000-11-23 | 2002-06-26 | 诠兴开发科技股份有限公司 | Packaging method for LED |
| CN102130280A (en) * | 2010-12-31 | 2011-07-20 | 浙江名芯半导体科技有限公司 | LED (Light Emitting Diode) package solder joint structure and process |
| CN203179954U (en) * | 2013-02-06 | 2013-09-04 | 华宏光电子(深圳)有限公司 | LED welding wire packaging structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113540330A (en) * | 2021-07-12 | 2021-10-22 | 格力电器（合肥）有限公司 | Light-emitting diode |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150930 |