CN104835903A - Method for manufacturing low-light-decay ice blue light emitting diode - Google Patents

Method for manufacturing low-light-decay ice blue light emitting diode Download PDF

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Publication number
CN104835903A
CN104835903A CN201410046788.XA CN201410046788A CN104835903A CN 104835903 A CN104835903 A CN 104835903A CN 201410046788 A CN201410046788 A CN 201410046788A CN 104835903 A CN104835903 A CN 104835903A
Authority
CN
China
Prior art keywords
led
chip
encapsulation structure
decay
blue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410046788.XA
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Chinese (zh)
Inventor
严春伟
赵强
何苗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Wenrun Optoelectronic Co Ltd
Original Assignee
Jiangsu Wenrun Optoelectronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Wenrun Optoelectronic Co Ltd filed Critical Jiangsu Wenrun Optoelectronic Co Ltd
Priority to CN201410046788.XA priority Critical patent/CN104835903A/en
Publication of CN104835903A publication Critical patent/CN104835903A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The invention relates to a method for manufacturing a low-light-decay ice blue light emitting diode (LED). The method comprises: performing die bonding of a blue chip on a copper support by using a conductive silver adhesive; performing normal wiring of the blue chip after die bonding; mixing a proper ratio of green fluorescent powder of silicate by adopting silica gel and performing lighting and roasting of the fluorescent powder; and applying an epoxy resin sealant to the semi-finished product of the lighted fluorescent powder to complete packaging the low-light-decay ice blue LED. By adopting the method to manufacture ice blue LED, thermal resistance of the LED is greatly reduce; heat dispersion of the LED is improved; and the decay of the LED is reduced.

Description

A kind of low light attenuation ice blue LED production method
technical fieldthe present invention relates to a kind of low light attenuation ice blue LED production method
background technologythe application of light-emitting diode in household electrical appliances, instrument instruction widely.Glow color expands blueness, white and ice blue to gradually by early stage redness, yellow, green.And at present the use of ice blue light-emitting diode becomes more and more popular, household electrical appliances, instrument, the instruction of computer, even automobile industry and display are expanded to.
Traditional ice blue light-emitting diode, uses the normal die bond bonding wire of blue chip, adopts green emitting phosphor compound tree lipid to mix arogel dot fluorescent powder, then covering epoxy resin.The ice blue LED color that this technique is produced can meet the demand of client to the blue color of ice, but the particularity due to ice blue LED: ice blue LED adopts the technique of blue chip+green powder, the material of green powder is aluminate, and aluminate temperature reaches more than 90 DEG C and very easily decomposes aging.The ice blue LED heat dispersion of traditional handicraft encapsulation is poor, very easily causes the light decay problem in LED use procedure.
summary of the inventionin order to overcome traditional ice blue LED heat radiating poor performance, the problems such as light decay is serious, propose a kind of low light attenuation ice blue LED production method:
A kind of LED encapsulation structure, wherein comprises a copper material LED support, a LEDs chip, conductive silver glue, at least two gold threads, silica gel mixes arogel and covering epoxy resin.Use conductive silver glue die bond blue chip on copper material support, the normal bonding wire of product after die bond, adopt the Suse green fluorescent material of silica gel mixing proper proportion to carry out dot fluorescent powder, baking, then the semi-finished product having put fluorescent material are used epoxy resin sealing, complete the encapsulation of low light attenuation ice blue LED.
Concrete operation method is as accompanying drawing 1, use conductive silver glue 5. 3. LED chip to be fixed to copper material support 6. to go up, normally toast after die bond, by bonding equipment, 1. gold thread is bonded on chip and support after baking, the connection between conducting chip and support, uses silica gel and fluorescent material to be mixed into mixed arogel and 2. put in support bowl cup, toast again, to the product put after fluorescent material, then covering one deck epoxy resin 4., completes the encapsulation of the blue light-emitting diode of low light attenuation ice.
The LED of this kind of encapsulation, compared with the LED of conventional package, packaging technology is consistent with conventional package; Adopt conductive silver glue to substitute traditional insulating cement die bond, the heat that chip is sent better conducts from die bond elargol; Adopt silica gel to carry out mixed powder, make chip heat be able to conduct from silica gel; Adopt copper stent to instead of traditional retort stand, the heat dispersion of lifting bracket, the heat conducting out from elargol and silica gel is conducted from copper stent rapidly.This kind of method for packing greatly reduces LED thermal resistance, promotes the heat dispersion of LED, reduces LED light and declines, improve the useful life of LED.
The advantage of low light attenuation ice blue LED production method:
1, adopt conductive silver glue to instead of traditional insulating cement die bond, the heat of chip bottom is better conducted from chip bottom
2, adopt silica gel to substitute traditional resin and mix fluorescent material, add the heat radiation at chip top
3, adopt copper stent to substitute traditional retort stand, make the heat being delivered to support from elargol and silica gel be delivered to LED outside from support rapidly
4, greatly reduce LED thermal resistance, promote the heat dispersion of LED, reduce LED light and decline, improve the useful life of LED
embodimentas shown in Figure 1, use conductive silver glue 5. 3. LED chip to be fixed to copper material support and 6. go up, normally toast after die bond, baking condition: 150 DEG C/2HRS; By bonding equipment, 1. gold thread is bonded on chip and support after baking, the connection between conducting chip and support; Use silica gel and fluorescent material to be mixed into mixed arogel 2. to put in support bowl cup, then toast, baking condition: 100 DEG C/1HRS+150 DEG C/5HRS; To the product put after fluorescent material, then covering one deck epoxy resin 4., completes the encapsulation of the blue light-emitting diode of low light attenuation ice.
Accompanying drawing explanation
Fig. 1 is low light attenuation ice blue light-emitting diode schematic diagram
Fig. 2 is low light attenuation ice blue light-emitting diode spectrogram
Mark in Fig. 1 is illustrated:
1. LED
2. silica gel and fluorescent material mix arogel
3. LED chip
4. LED covering epoxy resin
5. conductive silver glue
6. LED copper stent.

Claims (6)

1. a LED encapsulation structure, wherein comprises a copper material LED support, a LEDs chip, conductive silver glue, at least two gold threads, silica gel mixes arogel and covering epoxy resin.Use conductive silver glue die bond blue chip on copper material support, the normal bonding wire of product after die bond, adopt the Suse green fluorescent material of silica gel mixing proper proportion to carry out dot fluorescent powder, the semi-finished product having put fluorescent material are used epoxy resin sealing, completes the encapsulation of low light attenuation ice blue LED.
2. LED encapsulation structure as claimed in claim 1, is characterized in that: the chip wavelength used is 445-460nm.
3. as claimed in claim 1 LED encapsulation structure, is characterized in that: use fluorescent material peak wavelength for 520-535nm.
4. LED encapsulation structure as claimed in claim 1, is characterized in that: adopt conductive silver glue die bond.
5. LED encapsulation structure as claimed in claim 1, is characterized in that: adopt silica gel to carry out mixed fluorescent material.
6. LED encapsulation structure as claimed in claim 1, is characterized in that: LED support ground is copper material.
CN201410046788.XA 2014-02-10 2014-02-10 Method for manufacturing low-light-decay ice blue light emitting diode Pending CN104835903A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410046788.XA CN104835903A (en) 2014-02-10 2014-02-10 Method for manufacturing low-light-decay ice blue light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410046788.XA CN104835903A (en) 2014-02-10 2014-02-10 Method for manufacturing low-light-decay ice blue light emitting diode

Publications (1)

Publication Number Publication Date
CN104835903A true CN104835903A (en) 2015-08-12

Family

ID=53813651

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410046788.XA Pending CN104835903A (en) 2014-02-10 2014-02-10 Method for manufacturing low-light-decay ice blue light emitting diode

Country Status (1)

Country Link
CN (1) CN104835903A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108417673A (en) * 2018-02-06 2018-08-17 珠海市圣大光电有限公司 A kind of packaging technology of low light attenuation LED light
CN111341896A (en) * 2018-12-18 2020-06-26 亿光电子(中国)有限公司 Light emitting diode module
CN114335292A (en) * 2021-12-22 2022-04-12 深圳市玲涛光电科技有限公司 High-brightness LED lamp bead and preparation method and application thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108417673A (en) * 2018-02-06 2018-08-17 珠海市圣大光电有限公司 A kind of packaging technology of low light attenuation LED light
CN111341896A (en) * 2018-12-18 2020-06-26 亿光电子(中国)有限公司 Light emitting diode module
CN114335292A (en) * 2021-12-22 2022-04-12 深圳市玲涛光电科技有限公司 High-brightness LED lamp bead and preparation method and application thereof
CN114335292B (en) * 2021-12-22 2022-12-27 深圳市玲涛光电科技有限公司 High-brightness LED lamp bead and preparation method and application thereof

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WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150812

WD01 Invention patent application deemed withdrawn after publication