CN102637785A - Die-bonding method for increasing color-rendering index of light emitting diode - Google Patents
Die-bonding method for increasing color-rendering index of light emitting diode Download PDFInfo
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- CN102637785A CN102637785A CN2012101077389A CN201210107738A CN102637785A CN 102637785 A CN102637785 A CN 102637785A CN 2012101077389 A CN2012101077389 A CN 2012101077389A CN 201210107738 A CN201210107738 A CN 201210107738A CN 102637785 A CN102637785 A CN 102637785A
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Abstract
The invention relates to a die-bonding method for increasing a color-rendering index of a light emitting diode. The die-bonding method comprises the following steps of: A, baking and dehumidifying a bracket to be subjected to die bonding; B, putting the dehumidified bracket into a die-bonding machine, and performing die bonding on a first waveband blue light chip, namely dispensing a certain amount of die-bonding glue at a position of the first waveband blue light chip, which is to be subjected to die bonding, by the die-bonding machine, putting the first waveband blue light chip at the position dispensed with the die-bonding glue, and baking a product with the bonded first waveband blue light chip for a short time period, and initially curing the first waveband blue light chip; C, putting the product which is initially cured in the step B into the die-bonding machine, and performing die bonding on a second waveband blue light chip; and D, putting the product which is baked for a long time and cured totally into a welding machine, and electrically connecting each blue light chip subjected to die bonding in the steps with a lower circuit on the bracket by a metal wire. The die-bonding method is applied to die bonding of the light emitting diode.
Description
Technical field
The present invention relates to a kind of die-bonding method of light-emitting diode, relate in particular to a kind of die-bonding method that improves the light-emitting diode color rendering index.
Background technology
The main purpose of light-emitting diode (LED) encapsulation is to continue mutually in order to ensure correct electric and mechanical between the lower circuit on led chip and the support, and protects led chip not allow it to receive machinery, heat, humidity and other all external shock.When selecting method for packing, material and utilization board, must consider factors such as LED brilliant profile of heap of stone, electrical/mechanical characteristic and solid brilliant precision.
Nowadays white light LEDs has become lighting source, and general home lighting becomes a reality.A kind of white light packaged type the most ripe in the industry is: utilize the combination of fluorophor and blue-ray LED, just can obtain white light LEDs easily.The high-power product of conventional white light is to adopt single wave band blue light wafer to excite yellow fluorescent powder at present, and its shortcoming is that color rendering is relatively poor; For improving color rendering, in yellow fluorescent powder, to add red fluorescence powder usually and increase red composition in the spectrum, its shortcoming is because the conversion efficiency of red fluorescence powder is low, causes whole white-light emitting efficient to reduce.
Summary of the invention
Technical problem to be solved by this invention is a kind of die-bonding method that improves the light-emitting diode color rendering index to be provided, raising color rendering index and luminous efficiency.
In order to solve the problems of the technologies described above, the technical scheme that the present invention adopted is: a kind of die-bonding method that improves the light-emitting diode color rendering index may further comprise the steps:
Steps A. to pending solid brilliant support baking dehumidifying;
Support after step B. will dehumidify is put solid brilliant machine into; Carry out the solid crystalline substance of the first wave band blue chip; Specifically: at first use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating the solid first wave band blue chip; Put the first wave band blue chip then in the position of having put crystal-bonding adhesive, the product of the first wave band blue chip is lacked roastingly admittedly then, makes its primary solidification; The said first wave band blue chip is made up of the blue chip of 1 or many same wave bands;
Step C. puts into solid brilliant machine with step B through the product of too short roasting primary solidification; Carry out the solid crystalline substance of the second wave band blue chip; Specifically: at first use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating the solid second wave band blue chip; Put the second wave band blue chip then in the position of having put crystal-bonding adhesive, the product of the second wave band blue chip is grown roastingly admittedly then, makes its full solidification; The said second wave band blue chip is made up of the blue chip of 1 or many same wave bands;
Step D. puts into bonding equipment with step C through long roasting completely crued product, with metal wire with the lower circuit electric connection on every the blue chip that carries out solid crystalline substance in the above-mentioned steps and the support.
Further, the said blue chip of solid crystalline substance of treating has N wave band, wherein N>2, said step C puts into solid brilliant machine with step B through the product of too short roasting primary solidification, carries out the solid crystalline substance of second wave band blue chip to the n band blue chip, specifically is following steps:
Step C1: at first use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating the solid second wave band blue chip; Put the second wave band blue chip then in the position of having put crystal-bonding adhesive; Admittedly the product of the second wave band blue chip is lacked roastingly then, makes its primary solidification;
Step C2: repeating step C1 is until the solid crystalline substance of accomplishing N-1 wave band blue chip;
Step C3: the solid crystalline substance that carries out the n band blue chip: use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating solid n band blue chip; Put the n band blue chip in the position of having put crystal-bonding adhesive then; Admittedly the product of n band blue chip is grown roastingly then, makes its full solidification.
Further, said composition treats that the size of many blue chips of blue chip of N wave band of solid crystalline substance is the size of suitable Lamp cup, wherein N>2.
Same, the size of many blue chips of the said composition first wave band blue chip and the second wave band blue chip is the size of suitable Lamp cup.
Further, use solid brilliant machine point to go up a certain amount of crystal-bonding adhesive, a certain amount of referring to wherein: after putting blue chip, this crystal-bonding adhesive covers 1/3rd positions of chip height.
Further, baking dehumidifying is under baking temperature is 120 degrees centigrade temperature in the steps A, toasts two hours.
Further, the crystal-bonding adhesive among step B and the step C is silica gel or elargol or epoxy resin.
Further, the short baking equipment body in the above-mentioned steps is meant: be baking 30 minutes under 150 degrees centigrade the temperature at baking temperature; Its baking can use baking box to toast, and also can under the environment that other temperature can reach, toast.
Further, the long baking equipment body in the above-mentioned steps is meant: be baking 3 hours under 150 degrees centigrade the temperature at baking temperature; Its baking can use baking box to toast, and also can under the environment that other temperature can reach, toast.
Because the blue chip of different-waveband has different wavelengths, the blue chip of different wave length excites with a fluorescent material, and the emission wavelength of fluorescent material is also different.It is one section that same wave band refers to 2.5nm.The blue chip of at least two wave bands on the present invention consolidates in the polycrystalline product; Have a plurality of emission wavelengths after fluorescent material is stimulated like this; This has replenished the part that lacks in the spectrum to a certain extent; Thereby improve color rendering index and luminous efficiency, and avoided, well solved the problem of mentioning in the background technology for improving the apparent problem that refers to sacrifice luminous efficiency.In addition, the above-mentioned fluorescent material that is excited both can be the fluorescent material of solid color, also can be the mixing of the fluorescent material of multiple color.
Embodiment
Combine embodiment that the present invention is further specified at present.
A kind of die-bonding method that improves the light-emitting diode color rendering index may further comprise the steps:
Steps A. to pending solid brilliant support baking dehumidifying; Baking dehumidifying is under baking temperature is 120 degrees centigrade temperature, toasts two hours;
Support after step B. will dehumidify is put solid brilliant machine into; Carry out the solid crystalline substance of the first wave band blue chip; Specifically: at first use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating the solid first wave band blue chip, said crystal-bonding adhesive is silica gel or elargol or epoxy resin; Put the first wave band blue chip then in the position of having put crystal-bonding adhesive, the product of the first wave band blue chip is lacked roastingly admittedly then, makes its primary solidification; The said first wave band blue chip is made up of the blue chip of 1 or many same wave bands;
Step C. puts into solid brilliant machine with step B through the product of too short roasting primary solidification; Carry out the solid crystalline substance of the second wave band blue chip; Specifically: at first use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating the solid second wave band blue chip, said crystal-bonding adhesive is silica gel or elargol or epoxy resin; Put the second wave band blue chip then in the position of having put crystal-bonding adhesive, the product of the second wave band blue chip is grown roastingly admittedly then, makes its full solidification; The said second wave band blue chip is made up of the blue chip of 1 or many same wave bands, and the size of forming many blue chips of the first wave band blue chip and the second wave band blue chip is the size of suitable Lamp cup;
Step D. puts into bonding equipment with step C through long roasting completely crued product, with metal wire with the lower circuit electric connection on every the blue chip that carries out solid crystalline substance in the above-mentioned steps and the support.
Above-mentioned steps is the blue chip of intrinsic two different-wavebands in a Lamp cup; Also can in a Lamp cup, consolidate blue chip greater than two different-wavebands; Be that the said blue chip of treating solid crystalline substance has N wave band (N>2), so said composition treats that the size of many blue chips of blue chip of N wave band of solid crystalline substance is the size of suitable Lamp cup; Said step C puts into solid brilliant machine with step B through the product of too short roasting primary solidification, carries out the solid crystalline substance of second wave band blue chip to the n band blue chip, specifically is following steps:
Step C1: at first use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating the solid second wave band blue chip; Put the second wave band blue chip then in the position of having put crystal-bonding adhesive; Admittedly the product of the second wave band blue chip is lacked roastingly then, makes its primary solidification;
Step C2: repeating step C1 is until the solid crystalline substance of accomplishing N-1 wave band blue chip;
Step C3: the solid crystalline substance that carries out the n band blue chip: use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating solid n band blue chip; Put the n band blue chip in the position of having put crystal-bonding adhesive then; Admittedly the product of n band blue chip is grown roastingly then, makes its full solidification.
Further, the solid brilliant machine point of the use in the above-mentioned steps is gone up a certain amount of crystal-bonding adhesive, a certain amount of referring to wherein: after putting blue chip, this crystal-bonding adhesive covers 1/3rd positions of chip height.
Further, the short baking equipment body in the above-mentioned steps is meant: be baking 30 minutes under 150 degrees centigrade the temperature at baking temperature; Its baking can use baking box to toast, and also can under the environment that other temperature can reach, toast.
Further, the long baking equipment body in the above-mentioned steps is meant: be baking 3 hours under 150 degrees centigrade the temperature at baking temperature; Its baking can use baking box to toast, and also can under the environment that other temperature can reach, toast.
Because the blue chip of different-waveband has different wavelengths, it is one section that same wave band refers to 2.5nm.The concrete subrane of blue chip is: 445nm-447.5nm, 447.5nm-450nm, 450nm-452.5nm, 452.5nm-455nm, 455nm-457.5nm, 457.5nm-460nm, 460nm-462.5nm and 462.5nm-465nm.The blue chip of different-waveband excites with a fluorescent material, and the emission wavelength of fluorescent material is also different.And it is also big more that blue chip wave band farther apart, the emission wavelength of fluorescent material differ.
The blue chip of two or more different-wavebands on the present invention consolidates in the polycrystalline product; Have a plurality of emission wavelengths after fluorescent material is stimulated like this; This has replenished the part that lacks in the led emission spectrum to a certain extent, thereby improves color rendering index and luminous efficiency.In addition, the above-mentioned fluorescent material that is excited both can be the fluorescent material of solid color, also can be the mixing of the fluorescent material of multiple color.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; But the those skilled in the art should be understood that; In the spirit and scope of the present invention that do not break away from appended claims and limited; Can make various variations to the present invention in form with on the details, be protection scope of the present invention.
Claims (9)
1. die-bonding method that improves the light-emitting diode color rendering index is characterized in that: may further comprise the steps:
Steps A: to pending solid brilliant support baking dehumidifying;
Step B: the support after will dehumidifying is put solid brilliant machine into; Carry out the solid crystalline substance of the first wave band blue chip; Specifically: at first use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating the solid first wave band blue chip; Put the first wave band blue chip then in the position of having put crystal-bonding adhesive, the product of the first wave band blue chip is lacked roastingly admittedly then, makes its primary solidification; The said first wave band blue chip is made up of the blue chip of 1 or many same wave bands;
Step C: step B is put into solid brilliant machine through the product of too short roasting primary solidification; Carry out the solid crystalline substance of the second wave band blue chip; Specifically: at first use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating the solid second wave band blue chip; Put the second wave band blue chip then in the position of having put crystal-bonding adhesive, the product of the second wave band blue chip is grown roastingly admittedly then, makes its full solidification; The said second wave band blue chip is made up of the blue chip of 1 or many same wave bands;
Step D: step C is put into bonding equipment through long roasting completely crued product, with metal wire with the lower circuit electric connection on every the blue chip that carries out solid crystalline substance in the above-mentioned steps and the support.
2. the die-bonding method of raising light-emitting diode color rendering index according to claim 1; It is characterized in that: the said blue chip of solid crystalline substance of treating has N wave band; N wherein>2; Said step C puts into solid brilliant machine with step B through the product of too short roasting primary solidification, carries out the solid crystalline substance of second wave band blue chip to the n band blue chip, specifically is following steps:
Step C1: at first use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating the solid second wave band blue chip; Put the second wave band blue chip then in the position of having put crystal-bonding adhesive; Admittedly the product of the second wave band blue chip is lacked roastingly then, makes its primary solidification;
Step C2: repeating step C1 is until the solid crystalline substance of accomplishing N-1 wave band blue chip;
Step C3: the solid crystalline substance that carries out the n band blue chip: use solid brilliant machine a certain amount of crystal-bonding adhesive on the location point of treating solid n band blue chip; Put the n band blue chip in the position of having put crystal-bonding adhesive then; Admittedly the product of n band blue chip is grown roastingly then, makes its full solidification.
3. the die-bonding method of raising light-emitting diode color rendering index according to claim 2 is characterized in that: said composition treats that the size of many blue chips of blue chip of N wave band of solid crystalline substance is the size of suitable Lamp cup, wherein N>2.
4. the die-bonding method of raising light-emitting diode color rendering index according to claim 1 is characterized in that: the size of many blue chips of the said composition first wave band blue chip and the second wave band blue chip is the size of suitable Lamp cup.
5. the die-bonding method of raising light-emitting diode color rendering index according to claim 1 and 2; It is characterized in that: use solid brilliant machine point to go up a certain amount of crystal-bonding adhesive; A certain amount of referring to wherein: after putting blue chip, this crystal-bonding adhesive covers 1/3rd positions of chip height.
6. the die-bonding method of raising light-emitting diode color rendering index according to claim 1 and 2 is characterized in that: baking dehumidifying is under baking temperature is 120 degrees centigrade temperature in the said steps A, toasts two hours.
7. the die-bonding method of raising light-emitting diode color rendering index according to claim 1 and 2 is characterized in that: the crystal-bonding adhesive among said step B and the step C is silica gel or elargol or epoxy resin.
8. the die-bonding method of raising light-emitting diode color rendering index according to claim 1 and 2 is characterized in that: said short baking equipment body is meant: be baking 30 minutes under 150 degrees centigrade the temperature at baking temperature.
9. the die-bonding method of raising light-emitting diode color rendering index according to claim 1 and 2 is characterized in that: said long baking equipment body is meant: be baking 3 hours under 150 degrees centigrade the temperature at baking temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101077389A CN102637785A (en) | 2012-04-13 | 2012-04-13 | Die-bonding method for increasing color-rendering index of light emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101077389A CN102637785A (en) | 2012-04-13 | 2012-04-13 | Die-bonding method for increasing color-rendering index of light emitting diode |
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| CN102637785A true CN102637785A (en) | 2012-08-15 |
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| CN2012101077389A Pending CN102637785A (en) | 2012-04-13 | 2012-04-13 | Die-bonding method for increasing color-rendering index of light emitting diode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983253A (en) * | 2012-12-12 | 2013-03-20 | 南京汉德森科技股份有限公司 | Curing method for LED fluorescent glue |
| CN108807650A (en) * | 2018-06-15 | 2018-11-13 | 佛山宝芯智能科技有限公司 | A kind of semiconductor die bond and cured full-automatic continuous productive process method |
| CN110190175A (en) * | 2019-02-04 | 2019-08-30 | 深圳市长方集团股份有限公司 | A kind of solid weldering packaging technology with promotion SMD product TS reliability |
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| CN101246879A (en) * | 2007-02-16 | 2008-08-20 | 探微科技股份有限公司 | White light LED packaging structure with silica substrate and its production method |
| CN102148298A (en) * | 2010-12-28 | 2011-08-10 | 广州市鸿利光电股份有限公司 | Multipoint dispensing process and LED (light emitting diode) device |
| CN102354719A (en) * | 2011-09-28 | 2012-02-15 | 郑榕彬 | Device and method for producing white light with high color rendering index |
| CN202178255U (en) * | 2011-08-05 | 2012-03-28 | 深圳市瑞丰光电子股份有限公司 | Light-emitting diode (LED) module and lighting device |
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2012
- 2012-04-13 CN CN2012101077389A patent/CN102637785A/en active Pending
Patent Citations (5)
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| JP2002299694A (en) * | 2001-03-29 | 2002-10-11 | Mitsubishi Electric Lighting Corp | Led light-source device for illumination and illuminator |
| CN101246879A (en) * | 2007-02-16 | 2008-08-20 | 探微科技股份有限公司 | White light LED packaging structure with silica substrate and its production method |
| CN102148298A (en) * | 2010-12-28 | 2011-08-10 | 广州市鸿利光电股份有限公司 | Multipoint dispensing process and LED (light emitting diode) device |
| CN202178255U (en) * | 2011-08-05 | 2012-03-28 | 深圳市瑞丰光电子股份有限公司 | Light-emitting diode (LED) module and lighting device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102983253A (en) * | 2012-12-12 | 2013-03-20 | 南京汉德森科技股份有限公司 | Curing method for LED fluorescent glue |
| CN108807650A (en) * | 2018-06-15 | 2018-11-13 | 佛山宝芯智能科技有限公司 | A kind of semiconductor die bond and cured full-automatic continuous productive process method |
| CN110190175A (en) * | 2019-02-04 | 2019-08-30 | 深圳市长方集团股份有限公司 | A kind of solid weldering packaging technology with promotion SMD product TS reliability |
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Application publication date: 20120815 |