CN101834267B - Planar bracket and encapsulating method - Google Patents

Planar bracket and encapsulating method Download PDF

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Publication number
CN101834267B
CN101834267B CN2010101662928A CN201010166292A CN101834267B CN 101834267 B CN101834267 B CN 101834267B CN 2010101662928 A CN2010101662928 A CN 2010101662928A CN 201010166292 A CN201010166292 A CN 201010166292A CN 101834267 B CN101834267 B CN 101834267B
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China
Prior art keywords
planar bracket
welding zone
pin
welding
planar
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CN2010101662928A
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CN101834267A (en
Inventor
何畏
吴质朴
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SHENZHEN AOLUNDE COMPONENTS CO Ltd
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SHENZHEN AOLUNDE COMPONENTS CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78703—Mechanical holding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)

Abstract

The invention discloses a planar bracket for encapsulating a light-emitting diode. The planar bracket comprises two pins (1), wherein one end of each pin is bent downwards and extends forwards; one pin extends forwards to form a second welding zone (2) with a smaller area, and the other pin extends forwards to form a die bonding region (3) with a larger area; and a compression region (5) for a welder compression claw to compress extends out of one side of the second welding zone (2). The invention also discloses an encapsulating method for the planar bracket. In the planar bracket and the encapsulating method, the compression region of the compression claw relative to the second welding zone (2) is changed and poor weld lines caused by poor contact between the second welding zone of the planar bracket and a heating plate are reduced, so that rate of good products is increased, the poor hiding property of a product is lowered and the market competitiveness of the product is improved.

Description

Planar bracket and method for packing
Technical field
The present invention relates to the support of encapsulation LED, relate in particular to a kind of planar bracket and utilize this planar bracket that light emitter diode seal method is installed.
Background technology
Light-emitting diode is the most very powerful and exceedingly arrogant current light source, and it has advantages such as energy-conserving and environment-protective, safe and reliable, long service life, is widely used in all trades and professions.Utilizing the planar bracket encapsulation LED is a kind of important method during present semiconductor components and devices is produced.This method mainly is that various types of wafers and IC are fixed on the planar bracket with the silver slurry, makes current lead-through through bonding wire craft again.
As shown in Figure 1, existing planar bracket comprises that two are in the pin 1 that same plane is separated from each other up and down, and the right-hand member of pin is bending downwards all, and extends to the right.Top pin extends to form second welding zone 2 than small size to the right, following pin extends to form a larger area crystal bonding area 3 (seeing also Fig. 2) to the right.
As shown in Figure 2, the general brilliant bonding wire craft admittedly that uses of the encapsulation of existing planar bracket, this technology is: Gu crystalline substance → bonding wire → press seal.Namely elder generation as on the flat heating plate 8, is fixed in two pins 1 on the crystal bonding area 3 with wafer 4, is welded on the wafer 4 with the end of bonding wire porcelain mouth 9 with gold thread 6 again; Then, compress that top pin 1 (consulting Fig. 1) with the paw 7 of welding machine, with bonding wire porcelain mouth 9 other end of gold thread 6 is welded in second welding zone 2 again.After bonding wire is finished, last press seal.
Yet, see also Fig. 2, in solid brilliant bonding wire process, because pin 1 plane height, second welding zone, 2 planes of planar bracket are low, namely pin and second welding zone connect into a stepped structure by an inclined plane not on same plane between two planes.When the paw 7 of welding machine pressed to the pin face, because the effect of lever principle, the just perk slightly of second welding zone 2 of front end can not normally contact with heating plate 8.Causing like this before the bonding wire can not normal heating, and when bonding wire porcelain mouth 9 pressed down bonding wire, second welding zone 2 can move downward along with pressing down of bonding wire porcelain mouth, bonding wire porcelain mouth bonding wire dynamics is shifted, cause broken string or rosin joint at last, thereby cause the bad or reliability variation of device, it is bad higher to hide property.
Summary of the invention
The objective of the invention is in order to solve existing planar bracket and to carry out LED package, failure welding, the low technical problem of encapsulation yields propose a kind of planar bracket and method for packing with higher welding quality rate.
For solving the problems of the technologies described above, the planar bracket that the present invention proposes, comprise all bendings downwards of an end of two pins that are separated from each other, pin, and extend forward, wherein pin extends to form second welding zone than small size forward, the another pin extends to form a larger area crystal bonding area forward.One side of described second welding zone is extended one and is distinguished for pressing of compressing of welding machine paw.
Preferably, the described district that pressing is extended to the side near the another pin by second welding zone.
The method for packing of the planar bracket that the present invention proposes comprises the following steps:
Step 1, elder generation place planar bracket on one heating plate, wafer are fixed on the crystal bonding area of planar bracket;
Step 2, press district and crystal bonding area with what the paw of welding machine compressed second welding zone, and making second welding zone and heating plate fit, heating crystal bonding area and second welding zone again;
Step 3, with bonding wire porcelain mouth with an end of gold thread and wafer welding, the other end and second welding zone of gold thread welded;
Step 4, sealing.
Wherein: the pressure limit that described paw compresses second welding zone and crystal bonding area is 100～300 grams.
The temperature range of described heating crystal bonding area and second welding zone is 160～300 degrees centigrade.
Compared with prior art, the present invention extends one at second welding zone of planar bracket and can distinguish for pressing of compressing of welding machine paw, so that paw is directly being pressed on second welding zone, make second welding zone and the following heating plate can comprehensive engagement, bonding wire can normal heating, overcome bad phenomenon such as broken string or rosin joint, thereby the hiding property that greatly reduces product is bad, has promoted product quality.According to the nearly check of test manufacture over the past half year, the welding yields is 99.7% by 99% original lifting, greatly reduces production cost, has improved the competitiveness of product in market.
Description of drawings
Fig. 1 is the floor map of existing planar bracket;
Fig. 2 be Figure 1A-A to the parting face, be the schematic diagram of existing planar bracket encapsulation;
Fig. 3 is the structural representation of planar bracket of the present invention;
Fig. 4 be Figure 1B-B to the parting face, be the schematic diagram of planar bracket encapsulation of the present invention.
Embodiment
Fig. 3 shows the planar structure of planar bracket embodiment of the present invention, and described planar bracket comprises two pins that are separated from each other 1 up and down, and the right-hand member of (in conjunction with Fig. 4) pin is bending downwards all, and extends to the right.Wherein a pin (top pin) extends to form one to the right than second welding zone 2 of small size and another pin (following pin) extends to form a larger area crystal bonding area 3 to the right.Extend one in a side of second welding zone 2 and distinguish 5 for pressing of compressing of welding machine paw 7.In the present embodiment, pressing and distinguishing 5 side extensions by second welding zone 2 pin 1 below close.Pressing as required and distinguishing 5 and also can extend to other directions, for example, extending to the side away from following pin 1.
As shown in Figure 3 and Figure 4, the method for packing of planar bracket of the present invention, step is as follows:
Step 1, elder generation place planar bracket on one heating plate 8, wafer 4 are fixed on the crystal bonding area 3 of planar bracket.
Step 2, compress second welding zone 2 respectively with the paw 7 of welding machine and pressing and distinguish 5 and crystal bonding area 3, and make second welding zone 2 and heating plate 8 fit, heat crystal bonding area 3 and second welding zone 2 again.
Step 3, with bonding wire porcelain mouth 9 with an end of gold thread 6 and wafer 4 welding, the other end and second welding zone 2 of gold thread welded, namely pass through gold thread 6 wafer 4 be connected conducting with second welding zone 2.
Step 4, sealing.
In the above-mentioned technology, the pressure limit that paw 7 compresses second welding zone 2 and crystal bonding area 3 is 100～300 grams, and according to different pin material and sizes, but preferred pressure is 150 grams, 200 grams, 250 grams.Can guarantee that under this pressure second welding zone and crystal bonding area can perks.The temperature range of heating crystal bonding area 3 and second welding zone 2 is 160～300 degrees centigrade, and preferably temperature value is 180,200,230,280 degrees centigrade as required.Under this temperature, can make gold thread and the abundant combination of support coating, guarantee the bonding wire quality.
The experiment proved that the novel encapsulated method that the present invention proposes has changed pressing of paw and distinguished, minimizing is bad owing to planar bracket second welding zone contacts the bad bonding wire that produces with heating plate, thereby improved the production yields, it is bad to have reduced the hiding property of product, has increased the competitiveness of product in market.

Claims (2)

1. planar bracket, comprise two pins (1), the right-hand member of pin is bending downwards all, extend to the right again, a pin extends to form second welding zone (2) to the right, the another pin extends to form crystal bonding area (3) to the right, it is characterized in that, a side of described second welding zone (2) is extended one and pressed district (5) for what welding machine paw (7) compressed.
2. planar bracket as claimed in claim 1 is characterized in that: the described district (5) that pressing is extended to the side near another pin (1) by second welding zone (2).
CN2010101662928A 2010-04-30 2010-04-30 Planar bracket and encapsulating method Active CN101834267B (en)

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CN101834267B true CN101834267B (en) 2013-07-10

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Publication number Priority date Publication date Assignee Title
CN102005526A (en) * 2010-09-17 2011-04-06 深圳市奥伦德光电有限公司 Cheap method for encapsulating plane support
WO2016078052A1 (en) * 2014-11-20 2016-05-26 史利利 Led support and led light emitting unit
CN114609777A (en) * 2022-04-07 2022-06-10 南昌虚拟现实研究院股份有限公司 Optical lens with different-surface wire structure and eyeball tracking system

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CN1585143A (en) * 2004-06-01 2005-02-23 佛山市国星光电科技有限公司 Power LED and producing method thereof
US7170099B2 (en) * 2004-03-31 2007-01-30 Kabushiki Kaisha Toshiba Optical semiconductor device and a method for manufacturing the same
CN101656290A (en) * 2009-09-29 2010-02-24 四川九洲光电科技有限公司 Process for encapsulating light-emitting diode
CN201708185U (en) * 2010-04-30 2011-01-12 深圳市奥伦德元器件有限公司 Plane bracket

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JP2004214380A (en) * 2002-12-27 2004-07-29 Polyplastics Co Metal foil for lead frame formation, package for electronic components, its manufacturing method, and surface mounted light emitting component
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US7170099B2 (en) * 2004-03-31 2007-01-30 Kabushiki Kaisha Toshiba Optical semiconductor device and a method for manufacturing the same
CN1585143A (en) * 2004-06-01 2005-02-23 佛山市国星光电科技有限公司 Power LED and producing method thereof
CN101656290A (en) * 2009-09-29 2010-02-24 四川九洲光电科技有限公司 Process for encapsulating light-emitting diode
CN201708185U (en) * 2010-04-30 2011-01-12 深圳市奥伦德元器件有限公司 Plane bracket

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