CN1355571A - Packaging method for LED - Google Patents
Packaging method for LED Download PDFInfo
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- CN1355571A CN1355571A CN00133311A CN00133311A CN1355571A CN 1355571 A CN1355571 A CN 1355571A CN 00133311 A CN00133311 A CN 00133311A CN 00133311 A CN00133311 A CN 00133311A CN 1355571 A CN1355571 A CN 1355571A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
A packaging method for LED includes such steps as drilling through hole for positioning the crystal grain of LED, electroplating the through hole, dipping in soldering tin furnace to fill tin in the through hole, die pressing to form a recess, putting the said crystal grain in the recess, welding electrode wires and sealing with resin. The said LED has a reflecting seat.
Description
The invention provides a kind of method for packing of diode, be meant a kind of surface-mounted (SMD) light emitter diode seal method especially.
The encapsulation kenel of light-emitting diode (LED) is mainly divided two kinds, one is lamp type (Lamp), be to adopt the moulding of liquid resin reperfusion mode, another kind is surface-mounted (SMD), it has the mould injection forming (molding) of employing mode, also there is part to adopt the liquid resin reperfusion mode, is mainly the encapsulation of surface-mounted (SMD) light-emitting diode, also comprised the new LED encapsulation technology content of LED Chip on Board (COB) in addition in author content of the present invention.
The encapsulation of LED is considerable to considering of its thermal diffusivity, special on up-to-date White-light LED illumination purposes, to no longer be that 15mA or 20mA in the past is standard, but wish to reach more than the 50mA, even 100mA (brightness ratio is brighter), certainly its consumed power is bigger, Gu heat is also big, therefore must strengthen its radiating effect, U.S. Hewlett-Packard Corporation just develops the LED of a special package (being commonly called as Piranha) structure, and (Hewlett-Packard Corporation claims Super Flux LEDs, model HPWA-MHOO etc.) it emphasizes that thermal diffusivity is good, can pass to 70mA (conventional package is 20mA) out of question, and the big portion of this type LED is used in the 3rd stop lamp of automobile now.
The LED encapsulation is loose with regard to heat with regard to the property, the SMD type is the poorest a kind of of all LED package coolings, and is more far short of what is expected than lamp type (Lamp) package cooling, so it can't pass to big electric current, its poor radiation is main because its potting resin and the thermal diffusivity of substrate own are not good, can't effectively conduct heat.
The big portion of conventional surface sticking work type light-emitting diode (SMD LED) does not have reflection seat in addition, the manufacturer of design of reflection seat and few is arranged, SMD LED has the reflection seat design at present, borehole is gone up at ready-made circuit board (substrate) by big portion, impose the plated metal reflector again, after steps such as solid again crystalline substance, bonding wire, sealing enable to finish SMD LED finished product, shown in No. 381313 patent content of Taiwan patent announcement.Bottom surface in its recessed cup of recessed cup reflection seat that the borehole made comes out on circuit board is an arc (because of boring is caused), so this technology contact-making surface when LED crystal grain is solid brilliant is not good and more built on the sand, normal recessed cup bottom surface should be the plane in order to solid brilliant, solid this technology have lack and conductivity of heat not good.
My study for a long period of time LED work, multinomial patent and good achievement are arranged for many years, modern because surface-mounted LED, and not good research of its thermal diffusivity of LED Chip On Board found solution, and the manufacturing method thereof that makes new advances of research, but and mass production have good competitiveness and productive value.
The object of the present invention is to provide a kind of light emitter diode seal method, it has good thermal diffusivity.
Another object of the present invention is to provide a kind of light emitter diode seal method, it can improve the useful life of light-emitting diode.
Encapsulation first embodiment of light-emitting diode of the present invention is circuit board is directly got into the cave on the position that need place LED (being not borehole), after must do perforation and electroplate (this is general circuit plate processing procedure), again circuit board is crossed the tin stove, the hole location that perforation is electroplated is filled high temperature scolding tin entirely, utilize mould directly will to be pressed into a groove on the bump again, this groove is fixed L ED crystal grain and tool light reflex, and make the metal film of tool high light reflectivities such as electrogilding or silver in groove surfaces, do steps such as solid crystalline substance, bonding wire, encapsulation at last.
The characteristics of maximum of the present invention are being filled high temperature scolding tin (more than 250 ℃) for utilizing the circuit board process technology on the perforation position, after make a call to a groove reflection seat on this position again, utilize this bump to do the heat transfer effect, and can connect radiative material heat conduction in the bottom, therefore utilize this technology directly to make LEDChip On Board and be made into traffic signal light as LED, its effect assembles its processing procedure than tradition with the Lamp lamp and material cost is just straight many and thermal diffusivity is good, more can be applicable on other LED lamp light source Products Development.
In the first embodiment of the invention processing procedure, adopt its main purpose of high temperature scolding tin (more than 250 ℃) to use because of the long-term high electric current of LED (more than the 30mA) for avoiding, its inner highest temperature of LED crystal grain adstante febre may reach 120 ℃, if use general scolding tin (183 ℃, Sn 63%, Pb 37%) then can make the softening or phenomenons such as formation scolding tin crystal grain-growth or generation low-temperature alloy of solder joint.
For fear of the generation of these phenomenons and cause the quality problem of LED reliability, lay special stress on uses about 250 ℃-500 ℃ in high temperature scolding tin in the present invention, the most desirable person is 350 ℃, certainly material mostly is the formation of tin (Sn) and plumbous (Pb) alloy in scolding tin, if plate newspaper (Ag) or gold (Au) contour light reflective material in its groove surfaces, because tin (Sn) is easy to produce alloy with gold and silver, and cause the function effect of groove reflection seat, therefore in the present invention before electrogilding or silver film, must plate the rete that one deck barrier layer chromium (Cr) or other are not easy to produce with soldering tin material the low-temperature alloy phenomenon again, can avoid utilizing the produced SMDLED finished product of this skill when engaging, to cross tin stove Yin Gaowen and produce harmful effect like this with other circuit boards.
In order further to understand detailed content of the present invention more, below in conjunction with drawings and Examples the present invention is described as follows, wherein:
Fig. 1 is the schematic diagram that the encapsulation first embodiment circuit board of light-emitting diode of the present invention has perforation to electroplate.
Fig. 2 is the structure chart that scolding tin is filled in the encapsulation first embodiment circuit board perforation position of light-emitting diode of the present invention.
Fig. 3 is the encapsulation first embodiment circuit board of light-emitting diode of the present invention is made groove on the bump of perforation position a structure chart.
Fig. 4 is a structure chart of making the solid crystalline substance of LED, bonding wire, sealing on the encapsulation first embodiment circuit board soldering tin point groove of light-emitting diode of the present invention.
Fig. 5 is last packaged LED of the encapsulation first embodiment circuit board soldering tin point of light-emitting diode of the present invention and the structure chart that adds radiative material in the back side.
Fig. 6 is first structure chart of the encapsulation first embodiment SMD of light-emitting diode of the present invention.
Fig. 7 is second structure chart of the encapsulation first embodiment SMD of light-emitting diode of the present invention.
Fig. 8 is the encapsulation second embodiment board structure of circuit figure of light-emitting diode of the present invention.
Fig. 9 is encapsulation second embodiment of light-emitting diode of the present invention makes projection on circuit board a structure chart.
Figure 10 is encapsulation second embodiment of light-emitting diode of the present invention makes groove on the metal coupling electrode tip holder a structure chart.
Figure 11 is encapsulation second embodiment of light-emitting diode of the present invention places luminescent grain in groove a structure chart.
Figure 12 is first structure chart that encapsulation second embodiment of light-emitting diode of the present invention forms SMD LED encapsulation.
Figure 13 is second structure chart that encapsulation second embodiment of light-emitting diode of the present invention forms SMD LED encapsulation.
Figure 14 is the structure chart that encapsulation second embodiment of light-emitting diode of the present invention forms COB.
Figure 15 is that encapsulation the 3rd embodiment of light-emitting diode of the present invention has concavity groove substrate profile.
Figure 16 (a) is that encapsulation the 3rd embodiment of light-emitting diode of the present invention has concavity groove substrate surface formation metal electrode profile.
Figure 16 (b) is that encapsulation the 3rd embodiment of light-emitting diode of the present invention has concavity groove substrate surface formation metal electrode top view.
Figure 17 is that encapsulation the 3rd embodiment LED crystal grain of light-emitting diode of the present invention engages concavity substrate metal positive and negative electrode figure to cover crystal type.
Figure 18 is that encapsulation the 3rd embodiment of light-emitting diode of the present invention is with chip bonding and have the concavity reflection seat and lensed SMD LED encapsulating structure figure.
Figure 19 is that encapsulation the 3rd embodiment of light-emitting diode of the present invention is with chip bonding and have the SMD LED encapsulating structure figure of concavity reflection seat.
Encapsulation the 4th embodiment circuit board base construction figure of Figure 20 light-emitting diode of the present invention.
Figure 21 is encapsulation the 4th embodiment organic glue-line structure chart on the circuit board pedestal of light-emitting diode of the present invention.
Figure 22 is encapsulation the 4th embodiment organic glue-line structure chart of laser nicking of light-emitting diode of the present invention.
Figure 23 is the structure chart of encapsulation the 4th embodiment etched electrodes of light-emitting diode of the present invention.
Figure 24 is encapsulation the 4th embodiment SMD LED substrate junction composition of light-emitting diode of the present invention.
Figure 25 is the structure chart of encapsulation the 5th embodiment SMD LED of light-emitting diode of the present invention.
The known light-emitting diode SMD of Figure 26 type substrate metal electrode branch is engraved in the outer structure chart of concavity groove.
Figure 27 is the solid brilliant position of bonding wire structure chart of known light-emitting diode SMD type LED crystal grain.
First embodiment
Please consult shown in Figure 1, Fig. 1 is the used board substrate 1 of encapsulation of light-emitting diode of the present invention, on the surface of board substrate 1, make electrode 2, and the default LED of placement crystal grain position boring makes and runs through substrate and form perforation 3 on circuit board, after again circuit board is done the perforation electroplating processes and is made and form perforation electroplated metal layer 4, again circuit board is crossed the tin stove, make the perforation position fill up scolding tin and formed bump 5 (as shown in Figure 2), after with mould the surface of bump 5 is pressed into a little groove 6 (as shown in Figure 3) again, groove 6 major functions are for placing solid brilliant the using of LED crystal grain, and plate the layer of metal layer or be difficult for and the material of scolding tin generation low-temperature alloy (as chromium etc.) in groove surfaces, after plate one deck reflector such as materials such as gold or silver again, again the LED luminescent grain is fixed on the groove 6, and bonding wire pours into sealing resin 8 (as shown in Figure 4) at last and promptly forms crystal grain and put substrate (LED COB) encapsulation technology finished product, this technology is because to place the position of LED be one to run through the metal bump of circuit board, so when the heat that LED produced can be directly delivered to the other end, and can engage a radiative material 9 (as shown in Figure 5) in the other end to increase heat sinking function, so use its heat radiation of this technology good, LED can pass to big electric current (50mA-100mA), conventional method is to be very different because poor radiation can only pass to 25mA left and right sides electric current so the LED COB encapsulation technology of first embodiment of the invention and tradition directly are fixed on LED crystal grain on the general circuit plate.
The another kind of LED encapsulation kenel of first embodiment is surface-mounted element (SMDLED), as Figure 6 and Figure 7, its processing procedure is described the same with leading portion, be unique not existing together be to be to be connected to the bottom from the side in the place of electrode 2, and with on the circuit board the LED of encapsulated moulding cut into SMD type LED, so the SMD LED that forms also has good heat sinking function.
Second embodiment:
Please consult shown in Figure 8, Fig. 8 is the used board substrate 1 (identical with the first embodiment base material) of encapsulation second embodiment of light-emitting diode of the present invention, and make electrode 2 at substrate surface and make formation just, the negative electricity pole-face, with electrodes conduct to the bottom surface, be provided with in the precalculated position on the electrode surface of LED crystal grain and bonding wire, electroplated metal layer makes and forms a metal coupling (being commonly called as PUMP), its material is mainly copper, bigger electrode bumps claims metal coupling electrode tip holder 11, be called metal coupling electrode 10 at less projection, on the metal coupling electrode tip holder 11 of larger electrode bumping surface, utilize mould that this projection is struck out a little groove 6, groove 6 is identical with the function of the first embodiment groove 6, all be to place the LED luminescent grain to do solid crystalline substance and light reflex, and contain groove 6 and metal coupling electrode 10 at metal coupling electrode tip holder 11 and do electrogilding or silver-colored contour reflection material to increase the light reflection function; Again LED crystal particle 7 is positioned over (as shown in figure 11) on the groove 6 at last, and the bonding wire connection electrode is in another metal coupling electrode 10, and is packaged into surface-mounted (SMD) light-emitting diode (as Figure 12 and shown in Figure 13) with envelope Miao resin 8.
The method for making of metal coupling is except electroplating, also has a kind of seal method that is coated with, promptly be coated with at needs and be coated with seal layer of metal colloid (containing the micro mist metal powder grain) on the seal electrode surface with half tone, after handle through thermal annealing again and make metallic colloid sinter a metal coupling electrode into, after through mould this projection is struck out steps such as groove again, utilization is coated with its temperature of the formed metal material of seal method can not be too high, in order to annealing sintering, available leypewter material or materials such as copper, silver.
In a second embodiment, the electrode that can be directly be manufactured with reflection seat at any predeterminated position of circuit board must not cut into the SNID kenel, as shown in figure 14, promptly forms so-called LED COB (Chip On Board) crystal grain and puts the substrate package technology.
The 3rd embodiment:
Reflection seat SMD type LED is being arranged up to the present, still not having Flip Chip type (chip package) occurs, reason is that LED Flip Chip itself can make with regard to seldom manufacturer is capable, it needs the integration of LED upstream and downstream producer just can, LED is packaged with a lot of benefits with Flip Chip, without bonding wire, the heat radiation good, stay in grade, if add reflection seat then brightness can promote more than 30%, be the main flow of following LED encapsulation.
GaN is that the blue-ray LED positive and negative electrode is at same end, and its substrate (alumina single crystal) is the transparent body, therefore the blue-ray LED encapsulation adopt cover crystal type encapsulate it will be better than adopting the effect that traditional approach (positive encapsulation) comes, and without bonding wire, but LED adopts and covers crystal type and encapsulate its pin and have only 2 points, be difficult for solid brilliant (different with IC), I have obtained to solve and proposed patent application in this regard, Taiwan case numbers No. 87115314 and No. 88111160.Add that at the blue-ray LED grain surface yellow fluorescent powder can form white light LEDs (obtaining novel patent No. 157331-new white light LEDs as me) in addition, if blue-ray LED crystal grain adopt chip package then when being coated with yellow fluorescent powder its be not subjected to gold thread interference (not having bonding wire) the fluorescent material that is coated with more even, Gu it is also more even that its light of the white light that made comes out distributes, quality is preferable.
Please consult shown in Figure 1, Figure 15 is the profile (conventional substrate is a planar substrates) that the present invention's " encapsulation of light-emitting diode " the 3rd embodiment has concavity groove substrate (ceramic substrate), the surface of concavity reflection groove 22 plates metal level 23 (tradition is at planar substrates surface pressing Copper Foil) on circuit board pedestal 21 and pedestal, and utilize metal level 23 on the laser light vertical cut cutting board concavity reflection groove 22 shown in Figure 16 a and Figure 16 b, (conventional method is to utilize exposure on planar substrates to make formation positive electrode 31 and negative electrode 32 ends, develop, etching mode forms, but can't adopt this mode in the concavity groove).After again light-emitting diode (LED) crystal grain 5 is pasted and to be bonded in the concavity reflection groove 22 of circuit board pedestal to cover crystal type, the LED positive and negative electrode is engaged with the substrate metal positive and negative electrode, and utilize heating mode to make contact 36 can weld (as shown in figure 17) fully, last have the SMD structure or the general as shown in figure 19 rectangular SMD structure in package shape of lens more as shown in figure 18 with potting resin 37 encapsulated mouldings, this promptly finishes the first LEDs in the world with chip bonding and SMD type light-emitting diode with reflection recess.
The ceramic substrate of the base plate for packaging material employing high-cooling property of third embodiment of the invention light-emitting diode is its excellent in heat dissipation effect then, be more suitable for being used on the light-emitting diode product of big electric current as on the LED illuminating product, future products has suitable competitiveness and is more suitable for a large amount of productions.
Flip Chip is very ripe in the IC encapsulation, but have only two pin at the LED top electrode, and the very little again about 300 μ m of crystal grain * 350 μ m, be difficult to fixing, add that electrode contact and pole span are all very little, therefore generally will be used for also being difficult on the LED accomplish, and reflection seat is arranged again, and it makes very difficulty to strengthen its brightness, also so just has the chance of this invention creation to produce with the IC Flip Chip.
The 4th embodiment
The fourth embodiment of the invention circuit board is to adopt material such as the aluminium oxide (Al that mixes high-cooling property and insulation in the resin (EPOXY)
2O
3) or aluminium nitride (AlN), zinc oxide (ZnO) material is to strengthen heat radiation, be commonly referred to as in this present invention by " compound resin substrate ", circuit board pedestal 21 structures that composite resin material is utilized molding mode to be molded into earlier to have concavity reflection groove 22 are as originally shown in Figure 15, and plate metal conducting layer 23 (as shown in figure 20) on its surface, the back is coating photoresistance or a kind of organic colloid 29 on substrate, make base form a thin layer as shown in figure 21, since the rete 29 of coating photoresistance or organic colloid fluted 22 with its variable thickness sample of place that does not have groove, therefore can not be with the electrode in the photoresistance Exposure mode chemical development etched recesses at this, therefore the inventor finds out a new method, also be as shown in figure 22 with the direct nicking photoresistance of laser method or organic colloid rete 29 (being not exposure), the 3rd embodiment is that directly to carve metal electrode with higher-energy be ceramic substrate because of substrate, not Stimulated Light injury, at its substrate of the 4th embodiment is the compound resin substrate, if directly carve metal electrode with high energy laser, that also can hurt the compound resin substrate of ground, therefore the 4th embodiment must use and directly carve organic film 29 than low-energy laser and get final product (different materials must selection different wave length laser come nicking), after through the chemical etching mode metal level etching is just formed again, negative electrode as shown in figure 23, organic film or photoresistance with the surface cleans removal as Figure 23 again, form promptly that as shown in figure 24 structure has the concavity reflection seat and electrode divides the SMD LED board structure of groove in groove to be fit to do chip bonding, also can reach structure and the effect of the 3rd embodiment, the 3rd embodiment is different with its manufacturing method thereof of the 4th embodiment, but its final structure is then identical, so effect is also roughly the same, just the 4th embodiment adopts its thermal diffusivity of compound resin substrate to adopt ceramic substrate a little bit poorer than the 3rd embodiment slightly.
The 3rd embodiment and the 4th embodiment emphasize manufacturing method thereof and structure, emphasis is used for the chip bonding mode of SMD LED, but in the market LED crystal grain all bonding wire occupy the majority, in this case, also the 3rd embodiment and the 4th embodiment can be made the modification of part, promptly form the fifth embodiment of the present invention.
The 5th embodiment
The 5th embodiment utilizes when making positive and negative electrode among the 3rd and the 4th embodiment in groove, its electrode divides groove not in central authorities, but form big, a small electrode face end at eccentric (side), in order to conventional method that LED crystal grain is solid brilliant in steps such as large electrode face, bonding wire, embedding dress resins.
The characteristics of fifth embodiment of the invention are that bonding wire is welded on the interior electrode of groove, and conventional method bonding wire portion is welded in outside the groove, as shown in figure 27: the electrode of Figure 26, Figure 27 divides groove at (shown in No. the 381313rd, Taiwan patent announcement) outside the groove, the fifth embodiment of the invention electrode divides groove in groove, both branch grooves are very different, its SMD finished-product volume is less in groove, and as shown in figure 25, electrode divides groove, and then the encapsulating products thickness volume is all bigger outside groove; Electrode divides groove available liquid resin point glue in groove to get final product, and traditional approach promptly must adopt molding mode (Molding) just can, both are very different in die cost and processing procedure.In this special instruction.
Five cited embodiment of the present invention's " light emitter diode seal method " all can directly do LED COB encapsulation process on circuit board, also can directly cut into the SMD kenel, first embodiment utilizes perforation metal bump to make the groove reflection seat, second embodiment then utilizes bump metal point to make the groove reflection seat, the method of the present invention five embodiment is all different with the method for past traditional fabrication SMD LED, novelty and progressive with essence; Especially light-emitting diode will be made even more important in the encapsulation of white light LEDs future, because my obtained its encapsulation of white light LEDs patent must be used the design of groove and (be please refer to No. the 157331st, the novel patent in Taiwan and announce No. 406868, reach No. the 5962971st, United States Patent (USP)), also because must encapsulate under the ordering about that can't lead to big electric current thereby the generation that impels the present invention to invent at present SMD LED especially than big current drives in view of the white light LEDs utilization of future on throwing light on.
Claims (14)
1. light emitter diode seal method, it is characterized in that, be to do boring and perforation electroplating processes in the default placement LED crystal particle position of board substrate, after again circuit board is handled through solder furnace, make the perforation position fill up scolding tin and formed bump, after again with surperficial punch forming one groove of mould with bump, plate a metallic reflector in groove surfaces again; LED crystal particle is fixed in the groove, and the connection electrode line, through the moulding of sealing resin-encapsulated, form LED crystal particle and put substrate package, or again through cutting into the surface-mounted light-emitting diode with groove reflection seat.
2. light emitter diode seal method according to claim 1 is characterized in that, wherein bump is to be a high temperature scolding tin, and its fusing point is more than 250 ℃.
3. light emitter diode seal method according to claim 1, it is characterized in that, wherein can plate one deck barrier layer earlier to avoid reflector metal material and bump material production low-temperature alloy phenomenon before groove surfaces plates a metallic reflector, its barrier material can be chromium, nickel, titanium etc.
4. the encapsulation of light-emitting diode according to claim 1 is characterized in that, wherein plates a reflector in groove surfaces, and its reflector material is gold or silver etc.
5. light emitter diode seal method, it is characterized in that, be on the electrode surface of the predetermined set LED crystal particle of board substrate, to electroplate or be coated with the seal metal level to make and form a metal coupling electrode tip holder, utilize mould that this salient pole surface punching press is formed a groove, and plate one deck reflection layer material in groove surfaces; Again LED crystal particle is positioned in the groove, and the bonding wire connection electrode, use the moulding of sealing resin-encapsulated again, form LED crystal grain and put substrate package, or cut into surface-mounted light-emitting diode again with groove reflection seat.
6. light emitter diode seal method according to claim 5 is characterized in that, wherein on the electrode surface electroplated metal layer to make the material that forms the metal coupling electrode be copper, gold, silver or soldering alloy material.
7. light emitter diode seal method according to claim 5 is characterized in that, wherein being coated with its material of seal metal level on the electrode surface is copper, gold, silver or soldering alloy, and must make formation one metal coupling electrode tip holder through the sintering processes of heating.
8. according to the described light emitter diode seal method of claim 5, it is characterized in that, is silver or gold copper-base alloy in groove reflection seat surface light-plated reflector material wherein.
9. light emitter diode seal method, it is the ceramic circuit plate substrate that has the concavity reflection seat by a moulding in advance, the board substrate surface is plated with metal conducting layer, with laser light the coated metal on circuit board concavity reflection seat surface is done cutting process again, make each concavity reflection seat have positive and negative two end electrodes, again LED crystal particle is engaged with the positive and negative electrode of concavity reflection seat to cover crystal type, after become the surface-mounted light-emitting diode with the sealing resin-encapsulated again.
10. light emitter diode seal method according to claim 9 is characterized in that, metal conducting layer and wherein with light reflex person, and as materials such as silver, gold, or first copper facing is gold-plated again or structure such as silver forms.
11. light emitter diode seal method, it is the board substrate that has the concavity reflection seat by a moulding in advance, the board substrate surface is plated with metal conducting layer, after be coated with last layer organic colloid rete again, make in each concavity reflection seat of board substrate the organic colloid rete in two with the direct nicking organic colloid of laser light rete again, and form a wire and divide groove, after will divide the metal conducting layer etching in the groove to remove with etching mode again, again remaining organic colloid rete is removed, promptly just forming, the negative electrode two ends, again with LED crystal particle just to cover crystal type and concavity reflection seat, negative electrode engages, after become the surface-mounted light-emitting diode with the sealing resin-encapsulated again.
12. light emitter diode seal method according to claim 11 is characterized in that, organic colloid rete wherein can be a kind of macromolecule or micromolecule glued membrane such as PE, PC, PMMA etc., also can be a kind of photoresist rete.
13. light emitter diode seal method according to claim 11 is characterized in that, metal conducting layer and wherein with light reflex person, and as materials such as gold, silver, or first copper facing is plated structures such as gold, silver again and is formed.
14. according to claim 9 or 11 described light emitter diode seal method, it is characterized in that, wherein the dividing electrodes line is designed in the side of concavity reflection seat and make formation one big, a small electrode face, and LED crystal particle is fixed in large electrode face one end, and the LED luminescent grain makes wherein that an electrode bonding wire is connected in the small electrode end, after become the surface-mounted light-emitting diode with the sealing resin-encapsulated again.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00133311A CN1129968C (en) | 2000-11-23 | 2000-11-23 | Packaging method for LED |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00133311A CN1129968C (en) | 2000-11-23 | 2000-11-23 | Packaging method for LED |
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| CN1355571A true CN1355571A (en) | 2002-06-26 |
| CN1129968C CN1129968C (en) | 2003-12-03 |
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| CN00133311A Expired - Fee Related CN1129968C (en) | 2000-11-23 | 2000-11-23 | Packaging method for LED |
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| CN1306629C (en) * | 2003-04-09 | 2007-03-21 | 西铁城电子股份有限公司 | LED lamp |
| US7222993B2 (en) | 2003-03-31 | 2007-05-29 | Citizen Electronics Co., Ltd. | Light emitting diode device |
| CN100352066C (en) * | 2002-07-25 | 2007-11-28 | 松下电工株式会社 | Photoelectric element assembly |
| CN100452457C (en) * | 2004-05-31 | 2009-01-14 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic semiconductor component and housing base for such a component |
| CN1925179B (en) * | 2005-08-31 | 2010-05-26 | 斯坦雷电气株式会社 | Semiconductor light-emitting device |
| CN101728474A (en) * | 2009-11-16 | 2010-06-09 | 李亚平 | Manufacturing technology of high heat-conductivity high-power LED substrate |
| CN101158464B (en) * | 2007-10-19 | 2010-06-09 | 友达光电股份有限公司 | Back light device and back light module unit therefrom |
| CN101958390A (en) * | 2010-08-13 | 2011-01-26 | 李刚 | Light-emitting chip packaging structure |
| CN101459211B (en) * | 2007-12-11 | 2011-03-02 | 富士迈半导体精密工业（上海）有限公司 | Solid illuminating device |
| CN102034922A (en) * | 2010-11-18 | 2011-04-27 | 宜兴市鼎圆光电科技有限公司 | High-power LED (Light Emitting Diode) lighting module and preparation method |
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| CN101471407B (en) * | 2007-12-24 | 2012-02-29 | 亿光电子工业股份有限公司 | Method for encapsulating thin type LED device |
| CN101442088B (en) * | 2007-11-22 | 2012-03-28 | 广州市鸿利光电股份有限公司 | Method for shaping patch type LED optical lens model |
| CN101290962B (en) * | 2007-04-19 | 2012-07-18 | 斯坦雷电气株式会社 | Optical device |
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