CN102034922A - High-power LED (Light Emitting Diode) lighting module and preparation method - Google Patents
High-power LED (Light Emitting Diode) lighting module and preparation method Download PDFInfo
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- CN102034922A CN102034922A CN2010105493948A CN201010549394A CN102034922A CN 102034922 A CN102034922 A CN 102034922A CN 2010105493948 A CN2010105493948 A CN 2010105493948A CN 201010549394 A CN201010549394 A CN 201010549394A CN 102034922 A CN102034922 A CN 102034922A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
The invention relates to an improved high-power LED (Light Emitting Diode) heat-dissipating structure, which is characterized in that an encapsulated LED base board is fixed to be a printed circuit board for electronic use; and an encapsulated high-power LED is embedded into a printed circuit board hole to ensure that the bottom surface of an encapsulated LED heat-conducting base is at least flush with or slightly bulges from the back surface of the printed circuit board. In the invention, the module structure is simplified; the heat transferring path is changed to ensure that heat emitted from the LED is directly conducted to an applied lamp heat radiator from the encapsulated heat-conducting base, thereby obviously enhancing the outward heat-conducting property of the encapsulated high-power LED and respectively approaching the heat-conducting coefficient k of the heat-conducting base such as copper or silver; a light-transmitting cover is not adopted when the LED is encapsulated to ensure that the lighting angle reducing caused by the secondary light distribution is not generated, the lighting angle is big and the effective light-outgoing angle can be more than 140 DEG; a circuit board is adopted to replace an aluminium base board and a chip electrode is directly welded on the circuit board by using a gold thread to ensure that an electrode support is omitted, the encapsulation and the assembly are completed at one time; therefore, the preparation efficiency is enhanced and the estimation shows that the cost can be saved by about 50%-60%.
Description
Technical field
The invention relates to the improvement to the great power LED cooling structure, it is good to relate in particular to a kind of heat conductivity, great power LED luminescence component and preparation method that the radiator structure cost is low.
Background technology
Great power LED work produces a large amount of heats, raises as its derivation not being made junction temperature of chip, quickens brightness decay (light decay), and then reduces product brightness and useful life, there are some researches show, and 2 ℃ of the every risings of temperature, the LED unfailing performance can descend 10%.Existing great power LED luminescence component, typical from economic considerations radiator structure such as Fig. 1, on heat-conducting copper-based 1, be fixed with led chip 2 by glue envelope 7, and electrode wires is drawn by support 3, by be added with translucent cover 6 in chip the place ahead and form packaged LED, then the LED after this encapsulation is stacked by heat-conducting glue on the aluminium base 4 that is fixed on insulating oxide (hexagonal plate commonly used or plectane), two stands electrode 3 is welded on the electrode 5 on the aluminium-base plate insulating layer forms luminescence component.Again this aluminium base and bigger heat dissipation metal body are connected and fixed in the time of should being used as lamp, with heat conduction to radiator on the lamp.Aluminium base is made packaged high-power LED luminescence component substrate, bear heat loss through conduction simultaneously and as packaged high-power LED fixing base dual-use function, why people select aluminium base mainly is to consider that from heat conduction and two aspects of economy this is for being most widely used universal typical radiator structure at present.This radiator structure deficiency: the one, LED lights chip and produces heat, pass to the middle aluminium base of low heat conduction by relative high heat-conducting copper pedestal, conduct to application luminaire aluminium cooling base by aluminium base again, have only 237 W/mK owing to aluminothermy coefficient of conductivity k value is relatively low, add the oxidation insulating layer and the heat-conducting glue that there are the heat conductivility difference, actual heat conduction also will reduce, and actual measurement aluminium base back side thermal conductivity coefficient k value has only 220W/mK (being lower than aluminothermy coefficient of conductivity k value); The 2nd, cause electrode to be difficult to welding owing to the aluminium base endothermic effect and with tin layer incompatibility, there are dry joint or the bad problem of cold welding in regular meeting, extends weld time, though can reduce dry joint or cold welding, can reduce because of the sweating heat effect cause the led chip performance; The 3rd, assembly preparation must be finished in two steps, first step packaged LED, and second step stacked combination with aluminium base, and support is electrically connected with the aluminium base electrode during combination, can only adopt the low manual welding of work efficiency, caused that to prepare work efficiency low relatively.
People reduce chip operation and produce the infringement of heat to LED for improving great power LED luminescence component heat dispersion, and radiator structure is proposed multiple improvement, for example have.
Chinese patent CN201344505 great power LED cooling syndeton is connected through pad packaged LED with the aluminium wiring board, make LED produce heat and directly conduct in the aluminium wiring board through support.Chinese patent CN201549531U high-power LED encapsulation structure comprises copper base and is connected and fall trapezoidal radiating block on the substrate that led chip is placed on down trapezoidal radiating block groove.Chinese patent CN101159300 adopts the good copper material of thermal conductivity to make packaged LED heat-radiating substrate or the like.Yet their are formed luminescence component structure and still continue to use above-mentioned prior art, and the LED after the encapsulation is sticked on the aluminium base surface soldered electrode of oxidation insulating layer, and therefore above-mentioned shortcoming is not resolved yet.
Chinese patent CN201416774, CN201417788 are vertical with the package cooling foundation design, in have through hole to insert silver-plated copper rod, silver-plated copper rod one end and led chip thermo-contact, the other end contacts with using the lamp heat sink, reaches the flash heat transfer heat radiation by silver-plated copper rod conduction.This solution be still encapsulating structure, structure relative complex not only, the packaged LED volume is big, though producing heat, chip can derive (without pedestal heat conduction) fast by silver-plated copper rod, but still need the aluminium base of oxidation insulating layer to fix with hot cooperation of lamp body dish, actual still not good to the lamp seat heat conductivility; Secondly, adopt this infrastructure cost higher relatively, limited LED and promoted the use of.
The encapsulation of Chinese patent CN1828956 great power LED cooling adopts phase-change heat transfer that LED is produced transfer of heat to external environment condition.Chinese patent CN201242104 adopts heat pipe quick heat radiating structure.Though the phase transformation heat pipe can quick heat radiating, this structure causes the packaged LED volume big, and has significantly increased LED heat radiation cost, does not have the market competitiveness, is unfavorable for applying (economy is to apply key factor).Chinese patent CN200990387 high-power LED chip encapsulating structure directly is fixed on the LED wafer on the aluminium base of insulating oxide, band radiator structure, directly dispels the heat by aluminium base, and wafer, circuit, heating panel are integral.This structure not only causes single volume big, and thermal conductivity coefficient K value also is lower than normal value only for 119mw/k.
Prior art is objective to be shown, no matter which kind of prior art adopts conduct heat and improves, assembly is still continued to use the aluminium base surface that packaged LED is stacked in insulating oxide substantially, by aluminium base fix, heat conduction, again by aluminium base and the heat transfer pattern of using lamp cooling structure to contact, so heat transfer efficiency obviously can not be higher than the aluminium body; Secondly, forming assembly must be by encapsulating, be fixed in two step process that substrate separates.
Secondly, high-power LED encapsulation, typical structure such as Fig. 1 place led chip 2 usefulness glue 7 to fix on the zinc-plated copper pedestal 1 in two sides, and external application diffuser 6 encapsulates, for example Chinese patent CN201274297, CN2916931.This kind encapsulation because of there being the secondary light-distribution of diffuser, can make the LED rising angle diminish, and the effective angle maximum has only 120 degree, and diffuser has also retrained chip cooling simultaneously.
Above-mentioned deficiency still has is worth improved place.
Summary of the invention
The object of the invention is to overcome above-mentioned the deficiencies in the prior art, provides a kind of thermal conductivity better, the great power LED luminescence component that cost is lower.
The great power LED luminescence component that provides a kind of luminous angle big is provided another purpose of the present invention.
Still a further object of the present invention is to provide a kind of above-mentioned great power LED luminescence component preparation method.
The present invention's first purpose realizes, main improve that to be abandoning tradition overlay component pattern on the aluminium base with packaged high-power LED, employing embeds encapsulated LED fixation kit mode in the circuit plate hole that has through hole, thereby overcomes the deficiencies in the prior art, realizes the object of the invention.Specifically, great power LED luminescence component of the present invention, the great power LED and the base plate for fixing that comprise encapsulation, it is characterized in that base plate for fixing is the electronics printed substrate, packaged high-power LED embeds in the printed wire plate hole, and packaged LED heat conducting base bottom surface is flushed at least or slightly protrudes the printed substrate back side.
Before the detailed description, make a presentation by the basic function and the effect that can reach earlier, so that those skilled in the art have one clearly to understand to the art of this patent scheme invention.
The present invention adopts above-mentioned packaged LED to embed and passes wiring board fixing hole modular construction, make wiring board only play fixing encapsulation led function, lamp body heat sink thermal contact conductance can directly and be used in the heat conducting base of packaged LED (being generally copper sheet) bottom surface, with respect to prior art is directly to lamp body heat conduction by the copper pedestal that encapsulates high heat conduction, and needn't pass through aluminium base more indirectly to lamp body heat conduction, because of omitting a low relatively heat carrier aluminium base, obviously thermal conductivity will be higher than prior art, can directly reach or near the copper coefficient of heat conduction 401 W/mK (being higher than aluminothermy coefficient of conductivity k value), thereby improve the packaged LED heat conduction and heat radiation; And because base plate for fixing only is fixedly packaged LED and assembling usefulness, and no longer bear heat conduction and heat sinking function, so can adopt the low many printed substrates (pcb board) of price to replace aluminium base, and this modular construction can omit the contact conductor support, the led chip electrode directly is welded on the wiring board electrode by gold thread, thereby greatly reduces the assembly cost.Selecting wiring board, mainly is to consider to omit to do electrode on the fixing base surface again.The encapsulation base bottom surface flushes at least with the printed substrate back side or slightly protrudes the back side, is the thermo-contact heat conduction for guaranteeing that packaged LED cooling base and application luminaire heat carrier are good.
The printed substrate back side is slightly protruded in the said packaged LED heat conducting base of the present invention bottom surface, mainly be to guarantee that fully assembly and lamp radiator have excellent contact heat conduction when installing, and encapsulation heat conducting base " unsettled " influences heat conduction can not cause the assembling of assembly and lamp radiator the time, because actual package is no more than 3mm usually with heat conducting base thickness, and only outline is protruded for example micron dimension wiring board back side, just can satisfy this requirement, promptly can satisfy in the micron order dimension so this slightly protrudes.
In addition, for further improving packaged LED thermal conductivity in the assembly, a kind of being more preferably makes packaging LED chips silver-plated with the heat conducting base side face, like this heat that produces of chip can be directly the better and not extra high silver coating of price conducts to the application luminaire radiator by thermal conductivity, thereby packaged LED heat conduction is reached substantially or approaching silver-colored coefficient of heat conduction k value 429 W/mK, improve the outside heat conductivility of high-power packaged LED especially.In addition, after the employing of encapsulation heat conducting base is silver-plated, the existing copper pedestal can also be used instead other metal materials at a low price, with offset silver coating cost.
For not reducing or reduce less the luminous angle of packaged LED, a kind of better structure of assembly of the present invention is that packaged LED does not add translucent cover, reduce thereby avoided adding the luminous angle that the translucent cover secondary light-distribution brings, and the deficiency of constraint heat radiation.
For guaranteeing to produce in batches efficient, be fit to the mechanization operation, encapsulation cooperates with the wiring board through hole with heat conducting base among the present invention, better adopt mechanical tight fit, putting into encapsulation like this in the wiring board through hole neither can drop with heat conducting base, it is equal with the wiring board back side at least also can to guarantee to encapsulate the heat conducting base bottom surface, or slightly protrudes circuit backboard face, guarantees that the packaged LED heat conducting base is directly to lamp body heat conduction.
Printed substrate for the logical printed substrate (pcb board) of electronic product, has no special requirements, and selects printed substrate can reduce again and does electrode on the fixing base surface.Because of wiring board is fixing, installation packaged LED usefulness, those of ordinary skills can understand fixing, the installation sheet material that can also adopt other economy certainly, and it is equivalent to printed substrate.
The present invention's the 3rd purpose realizes that a kind of better employing encapsulation is once finished simplified assembly preparation technology with the preparation assembly.Great power LED luminescence component preparation method of the present invention, it is characterized in that designing processing printed wiring board by application requirements, and processing through hole by putting the packaged high-power LED position, packaged LED is put into through hole with heat conducting base, and make its bottom surface flush in the wiring board tool back plane at least or slightly protrude tool back plane, on heat conducting base, place led chip, adopt the LED packaging technology, packaging LED chips on heat conducting base, its chips two electrodes are connected by wire bonds with the wiring board top electrode.
Above-mentioned technology is products perfection technology of the present invention, certainly also obviously can same prior art, and adopt encapsulation and form two step of assembly separate process, be about to packaged LED and embed in the printed wire plate hole fixingly, but, obviously there is not this necessity from the angle of enhancing productivity.
LED packaged type among the present invention, same substantially prior art just can change packaged type because of modular construction changes to some extent.Wiring board through hole and packaged LED copper pedestal cross sectional shape are not limit, and for example can adopt existing general simple round copper sheet, and the present invention is a kind of to be preferably employing radially has and protrude or the spacing round copper sheet pedestal of indent.
Great power LED luminescence component of the present invention, with respect to prior art, because assembly has been abandoned tradition packaged high-power LED has been overlayed pattern on the insulating barrier aluminium base, employing embeds packaged LED to pass and has in the through hole circuit plate hole fixedly assembling mode, change the prior art installation base plate and need have heat transfer simultaneously concurrently, heat radiation reaches fixedly dual-use function, for only having the fixed single function, not only simplified modular construction, and especially changed heat-transfer path, high-power LED chip produces the encapsulation copper pedestal that heat is at first passed to high heat conduction, then by encapsulating the direct and application luminaire heat sink transmission of heat by contact of copper pedestal or silver-plated copper pedestal, the aluminium base of low heat conduction conducts heat in the middle of omitting, obviously improved the outside heat conductivility of packaged high-power LED, make packaged LED to lamp heat conducting, can be respectively near copper or silver-colored coefficient of heat conduction k value (410 or 429), be lower than the heat conduction of aluminothermy coefficient of conductivity k value apparently higher than prior art, coefficient of heat conduction k value can reach existing adopt 1.8 times of aluminium base and more than, make that the outside heat conductivility of great power LED is better, thereby help improving the long-term stability in use of great power LED and reduce light decay, prolonged effective use LED life-span.Secondly, fixing base adopts cost to replace far below the PCB wiring board of aluminium base (price has only the 1/3-1/5 of aluminium base), chip electrode directly by the gold thread welding in the circuit board, has omitted electrode suppor, and the rough estimation of binomial can be saved hard cost about about 40%.And chip electrode directly is welded on the wiring board electrode by gold thread, can adopt encapsulation to play weldering with wire bonder, not only has high welding efficiency, and omitted the welding of support and aluminium base, both improved soldering reliability, raised the efficiency again, and also can not damage chip because of sweating heat; And preparation technology can once finish, and simplified artisan craftsmanship greatly, is more suitable on the technology producing in batches, and the production efficiency height also makes production cost to be minimized.Besides, packaged LED is without diffuser, reduce at the luminous angle that does not have secondary light-distribution to cause, it is big to have luminous angle, effectively rising angle can reach more than 140 degree, and does not have the also favourable chip cooling of diffuser sealing, and does not have diffuser encapsulation is finished after as find to have the chip damage, can directly remove glue and replace chip, reduce manufacturing cost especially.Above-mentioned four make that the luminescence component cost is further reduced, and estimation can be saved the about 50-60% of cost.Great power LED luminescence component of the present invention adopts wiring board to fix, and does not have and draws support, no diffuser, packaged LED and substrate adopt to embed and pass fixing (not stacking), and encapsulation is once finished with fixing on the technology, and these all constitute the present invention and are different from the different identification points of prior art.Assembly of the present invention, same prior art both can have been made single great power LED assembly, also can make many great power LED assemblies, was the very high novel large-power LED luminescence component of a kind of cost performance.
Below in conjunction with two exemplary embodiments; essence of the present invention is further understood in exemplary illustration and help; but the embodiment detail only is for the present invention is described; do not represent the present invention to conceive whole technical schemes down; therefore should not be construed as the total technical scheme of the present invention is limited; some are In the view of the technical staff; the unsubstantiality that does not depart from the present invention's design increases and/or change; for example simple the change or replacement of technical characterictic to have same or similar technique effect all belongs to protection range of the present invention.
Description of drawings
Fig. 1 is a prior art great power LED luminescence component structural representation.
Fig. 2 is single great power LED luminescence component of a this patent structural representation.
Fig. 3 is an encapsulation copper pedestal plan structure schematic diagram among Fig. 2.
Fig. 4 is Fig. 2 luminescence component plan structure schematic diagram.
Fig. 5 is Fig. 4 backsight structural representation.
Fig. 6 is three great power LED luminescence components of this patent plan structure schematic diagram.
Embodiment
Embodiment 1: referring to Fig. 2-5, be example to fix a great power LED with prior art hexagonal substrate.Adopt electronics to make hexagonal substrate 8 by existing same line and installing hole with pcb board, the packaged LED position is being installed at the center, be processed with and encapsulate heat-conducting copper-based seat 1 friction tight through hole (shape and encapsulation are identical with the copper pedestal), copper pedestal 1 better adopts symmetrical protruding ear location structure (Fig. 3), and the copper pedestal is carried out silver-plated processing.During the preparation assembly, silver-plated copper pedestal 1 is embedded in pcb board 8 through holes, and the copper base bottom surface is flushed at least with the pcb board bottom surface, or slightly protrude for example 30 microns of bottom surfaces, put 1 watt of high-power LED chip 2,, with making the gold thread machine positive and negative two electrodes on the led chip 2 are welded in respectively on the pcb board respective electrical limit 5 simultaneously by glue encapsulation 7 no diffuser encapsulation by existing packaging technology.When being applied on the lighting, the great power LED assembly of making is fixed on it, made the direct and lamp body radiator thermal contact conductance of packaged LED copper pedestal simultaneously.
Embodiment 2: referring to Fig. 6, as embodiment 1, wherein pcb board 8 has three by putting the packaged LED through hole by 120 degree angles, carries out three 1 watt of LED encapsulation simultaneously, constitutes the luminescence component of three LEDs.
To those skilled in the art; under this patent design and specific embodiment enlightenment; some distortion that can directly derive or associate from this patent disclosure and general knowledge; those of ordinary skills will recognize also can adopt additive method; or the substituting of known technology commonly used in the prior art; and the equivalence of feature changes or modification; mutual various combination between feature; the for example change of installation base plate shape; different wiring boards embed the variation of packaged LED quantity, led chip power difference; the fixedly variation of packaged LED base material; or the like unsubstantiality change, can be employed equally, can both realize this patent representation function and effect; launch for example no longer one by one to describe in detail, all belong to this patent protection range.
Said LED of this patent such as nothing specialize the great power LED that all refers to power 〉=0.5 watt.
Claims (8)
1. great power LED luminescence component, the great power LED and the base plate for fixing that comprise encapsulation, it is characterized in that base plate for fixing is the electronics printed substrate, packaged high-power LED embeds in the printed wire plate hole, and packaged LED heat conducting base bottom surface is flushed at least or slightly protrudes the printed substrate back side.
2. according to the described great power LED luminescence component of claim 1, it is characterized in that packaging LED chips has silver coating with the heat conducting base side face.
3. according to claim 1 or 2 described great power LED luminescence components, it is characterized in that packaged LED heat conducting base bottom surface slightly protrudes the printed substrate back side.
4. according to claim 1 or 2 described great power LED luminescence components, it is characterized in that packaged LED does not have translucent cover.
5. according to claim 1 or 2 described great power LED luminescence components, it is characterized in that packaged LED heat conducting base and wiring board through hole are mechanical tight fit.
6. great power LED luminescence component preparation method, it is characterized in that designing processing printed wiring board by application requirements, and processing through hole by putting the packaged high-power LED position, packaged LED is put into through hole with heat conducting base, and make its bottom surface flush in the wiring board tool back plane at least or slightly protrude tool back plane, on heat conducting base, place led chip, adopt the LED packaging technology, packaging LED chips on heat conducting base, its chips two electrodes are connected by wire bonds with the wiring board top electrode.
7. according to the described great power LED luminescence component of claim 6 preparation method, it is characterized in that the led chip electrode is welded to connect by gold thread and wiring board electrode.
8. according to the described great power LED luminescence component of claim 7 preparation method, it is characterized in that chip electrode and wiring board electrode are welded to connect to beating the gold thread mode to finish by machinery.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105493948A CN102034922A (en) | 2010-11-18 | 2010-11-18 | High-power LED (Light Emitting Diode) lighting module and preparation method |
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| CN2010105493948A CN102034922A (en) | 2010-11-18 | 2010-11-18 | High-power LED (Light Emitting Diode) lighting module and preparation method |
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| CN102034922A true CN102034922A (en) | 2011-04-27 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066193A (en) * | 2011-10-19 | 2013-04-24 | 北京瑞阳安科技术有限公司 | Novel light-emitting diode (LED) radiation structure |
| CN103258935A (en) * | 2012-02-21 | 2013-08-21 | 隆达电子股份有限公司 | Electronic element connecting base, electronic element module and electronic device manufactured by using same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1355571A (en) * | 2000-11-23 | 2002-06-26 | 诠兴开发科技股份有限公司 | Packaging method for LED |
| CN1434522A (en) * | 2002-01-21 | 2003-08-06 | 诠兴开发科技股份有限公司 | Method for package of high power LED |
| CN2720646Y (en) * | 2004-07-29 | 2005-08-24 | 亿光电子工业股份有限公司 | High-power light emitting diode package structure |
| CN201859892U (en) * | 2010-11-18 | 2011-06-08 | 宜兴市鼎圆光电科技有限公司 | High-power LED light emitting component |
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2010
- 2010-11-18 CN CN2010105493948A patent/CN102034922A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1355571A (en) * | 2000-11-23 | 2002-06-26 | 诠兴开发科技股份有限公司 | Packaging method for LED |
| CN1434522A (en) * | 2002-01-21 | 2003-08-06 | 诠兴开发科技股份有限公司 | Method for package of high power LED |
| CN2720646Y (en) * | 2004-07-29 | 2005-08-24 | 亿光电子工业股份有限公司 | High-power light emitting diode package structure |
| CN201859892U (en) * | 2010-11-18 | 2011-06-08 | 宜兴市鼎圆光电科技有限公司 | High-power LED light emitting component |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066193A (en) * | 2011-10-19 | 2013-04-24 | 北京瑞阳安科技术有限公司 | Novel light-emitting diode (LED) radiation structure |
| CN103258935A (en) * | 2012-02-21 | 2013-08-21 | 隆达电子股份有限公司 | Electronic element connecting base, electronic element module and electronic device manufactured by using same |
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Application publication date: 20110427 |