CN103066193A - Novel light-emitting diode (LED) radiation structure - Google Patents
Novel light-emitting diode (LED) radiation structure Download PDFInfo
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- CN103066193A CN103066193A CN2011103182328A CN201110318232A CN103066193A CN 103066193 A CN103066193 A CN 103066193A CN 2011103182328 A CN2011103182328 A CN 2011103182328A CN 201110318232 A CN201110318232 A CN 201110318232A CN 103066193 A CN103066193 A CN 103066193A
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Abstract
The invention provides a novel light-emitting diode (LED) radiation structure and belongs to the LED lighting field. The novel LED radiation structure comprises a copper embedded block (6), a printed circuit board (PCB) (7) and an LED chip (3) and can be changed based on the structure. The thickness of the novel LED radiation structure is equal to or similar to the thickness of the PCB. The PCB is provided with a groove similar to the appearance of the copper embedded block, copper is coated on the groove wall, a circuit layer and an LED positive and negative electrode welding disk are covered on the front side of the PCB, and the LED chip is of a thermoelectric separation structure. The novel LED radiation structure has the advantages of being good in radiation effect, low in cost, simple in manufacture process, stable in performance, suitable for various LED light lamps of LED explosionproof lamps, LED road lamps and the like and capable of greatly reducing thermal resistance, improving stability of the whole LED lamps, prolonging service life, reducing radiation area of LED lamps, reducing lamp size, reducing weight, saving materials and reducing the whole lamp cost.
Description
Technical field
The invention provides a kind of low thermal resistance, the thermoelectric LED structure of heat dissipation substrate that separates.
Background technology
Semiconductor lighting also is LED because the life-span is long, power consumption less, safety low-pressure, the advantages such as volume is little, response is fast, the anti-low temperature of antidetonation, environmental protection, be widely used at lighting field.The semiconductor lamp power consumption only is 1/10 of incandescent lamp under same brightness, and the life-span then is 100 times of incandescent lamp.According to estimates, the electric power that the annual LED of the employing illumination of Science in Future in China is saved is equivalent to the pipe of reinforced concrete at Three Gorges Power Station generating total amount of the whole year, reduces simultaneously by 8,000 ten thousand tons of CO
2,650,000 tons of SO
2With 320,000 tons of NO
2Discharging.At present, China has become the first in the world large electric lighting producing country and second largest electric lighting exported country.
Yet because there is bottleneck in LED in heat dissipation design at present, add that the price of led chip own is high, cause LED light fixture price far above ordinary lamp and lantern, seriously restricting applying of LED.Therefore the heat radiation that effectively solves LED can effectively reduce cost, promotes the extensive use of LED.
Because the led chip volume is little, caloric value is large relatively, if heat can not in time distribute, light decay will soon appear in LED, life termination, and therefore traditional PCB can not satisfy instructions for use.Present most great power LED all adopts aluminium base as heat-radiating substrate.Aluminium base is divided into three layers in conductive layer, heat conductive insulating layer and aluminium, and wherein the heat conductive insulating layer is the most important, and it plays transferring heat and the effectively effect of insulation.But the present the highest conductive coefficient of heat conductive insulating layer can only reach 2.2~3W/m-k, and this material only has other country such as U.S. to produce, and China can only reach about 1W/m-k, and highly heat-conductive material must rely on import.Yet this material still belongs to the non-conductor of heat with respect to the conductive coefficient 386W/m-k of the conductive coefficient 220W/m-k of aluminium and copper, become the bottleneck problem in the LED heat dissipation design.
Summary of the invention
For the problems referred to above, the invention provides a kind of simple in structure, good heat dissipation effect, practical LED radiator structure.
Technical scheme of the present invention is: the LED radiator structure comprises copper abaculus 6, PCB 7 and led chip 3.Described copper abaculus profile is I shape, contacts, simultaneously because copper has high heat transfer efficiency, therefore can with heat promptly to outdiffusion, can also develop on this basis according to actual needs with can guaranteeing like this copper abaculus and LED maximum area; Its thickness equals or is approximately equal to PCB thickness, to guarantee that led chip can weld together effectively with the copper abaculus in Reflow Soldering.Described PCB with described copper abaculus appearance similar but larger-size groove, cell wall covers copper 1, between groove and the copper abaculus certain gap is arranged like this, in the welding process, a certain amount of tin cream of brush above the gap, the tin cream fusing flow in the gap during Reflow Soldering, and copper abaculus and PCB are welded together, but guarantee that the gap can not be too large, otherwise tin cream can form at the PCB back side projection; PCB covers in the front circuit line layer 5 and LED both positive and negative polarity pad 4.Described led chip must adopt thermoelectric isolating construction, this LED both positive and negative polarity wiring pad 8 and heat dissipation bonding pad 9, the both positive and negative polarity wiring pad of led chip and the welding of the both positive and negative polarity pad Reflow Soldering on the PCB, its heat dissipation bonding pad and copper abaculus Reflow Soldering welding, because described PCB electric heating separates, therefore can avoid using heat-conducting insulation material, make the radiating effect maximization.
Description of drawings
Fig. 1 is New LED radiator structure exploded perspective view
Fig. 2 is the led chip bottom view
Among the figure: 1 cell wall covers copper, 2 scolding tin, 3LED chip, 4LED both positive and negative polarity pad, 5 circuit line layer, 6 bronze medal abaculus, 7PCB, 8LED chip both positive and negative polarity wiring pad, 9LED chip cooling pad.
Embodiment
The led chip of varying number is set in the practical application as required, can be single, also can get many.At first design the position of LED on the PCB design software, place the both positive and negative polarity pad of LED in the corresponding position, position and the size of groove milling are set, and connect circuit trace figure.Mill out required groove during production and erode away LED both positive and negative polarity wire, then cover the welding of copper in order to the later stage in cell wall and the edge of PCB.The PCB that makes is placed on the smooth smooth working face, getting I shape copper abaculus is placed on respectively in the middle of each groove, use half tone brushing tin cream on the pad place of PCB, the copper abaculus and around the slit between copper abaculus and pcb board, post again led chip and carry out reflow soldering.Both positive and negative polarity wiring pad on both positive and negative polarity pad on the pcb board and the corresponding led chip and heat dissipation bonding pad and the copper abaculus of led chip are welded together, tin cream after the fusing flows into the slit between PCB and the copper abaculus simultaneously, finish the welding between copper abaculus and PCB, final led chip and copper abaculus and PCB link into an integrated entity.
Claims (4)
1. a New LED radiator structure comprises copper abaculus, PCB and led chip, it is characterized in that: described copper abaculus profile is I shape, can also develop on this basis according to actual needs, and its thickness equals or is approximately equal to described PCB thickness; Described PCB with the groove of described copper abaculus appearance similar, cell wall covers copper, PCB covers in the front circuit line layer and LED both positive and negative polarity pad; Described led chip must adopt thermoelectric isolating construction, and this LED is with both positive and negative polarity wiring pad and heat dissipation bonding pad.
2. a kind of New LED radiator structure according to claim 1 is characterized in that: between described copper abaculus and the PCB cell wall certain gap is arranged, in the melts soldering tin inflow gap, copper abaculus and PCB are welded together during Reflow Soldering.
3. a kind of New LED radiator structure according to claim 1 is characterized in that: the both positive and negative polarity wiring pad of described led chip and the welding of the both positive and negative polarity pad of PCB.
4. a kind of New LED radiator structure according to claim 1, it is characterized in that: the heat dissipation bonding pad of described copper abaculus and led chip welds by Reflow Soldering.
Priority Applications (1)
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CN2011103182328A CN103066193A (en) | 2011-10-19 | 2011-10-19 | Novel light-emitting diode (LED) radiation structure |
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CN2011103182328A CN103066193A (en) | 2011-10-19 | 2011-10-19 | Novel light-emitting diode (LED) radiation structure |
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CN2011103182328A Pending CN103066193A (en) | 2011-10-19 | 2011-10-19 | Novel light-emitting diode (LED) radiation structure |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103996785A (en) * | 2014-06-04 | 2014-08-20 | 宁波亚茂照明电器有限公司 | Built-in drive full-angle light-emitting LED light source and packaging process |
CN106028631A (en) * | 2016-07-28 | 2016-10-12 | 广东欧珀移动通信有限公司 | PCB and mobile terminal with PCB |
CN104037301B (en) * | 2014-05-19 | 2017-06-30 | 伊韦尔(深圳)光电科技有限公司 | A kind of cob method for packing of LED lamp panel |
CN111864040A (en) * | 2020-09-23 | 2020-10-30 | 歌尔股份有限公司 | Metal substrate and heating element |
CN113993298A (en) * | 2021-12-27 | 2022-01-28 | 深圳中科四合科技有限公司 | BGA component self-alignment structure and alignment method |
CN114975753A (en) * | 2022-07-28 | 2022-08-30 | 东莞市湃泊科技有限公司 | Optical chip packaging base |
Citations (4)
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CN101619814A (en) * | 2009-07-24 | 2010-01-06 | 重庆大学 | Directly embedded high-power LED illumination module |
CN201487679U (en) * | 2009-08-25 | 2010-05-26 | 上海光达照明有限公司 | LED color temperature variable milky white cavity lamp |
CN102034922A (en) * | 2010-11-18 | 2011-04-27 | 宜兴市鼎圆光电科技有限公司 | High-power LED (Light Emitting Diode) lighting module and preparation method |
CN201925886U (en) * | 2010-12-23 | 2011-08-10 | 康佳集团股份有限公司 | Heat-dissipation structure based on thermoelectric separation LED (light-emitting diode) lamp |
-
2011
- 2011-10-19 CN CN2011103182328A patent/CN103066193A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101619814A (en) * | 2009-07-24 | 2010-01-06 | 重庆大学 | Directly embedded high-power LED illumination module |
CN201487679U (en) * | 2009-08-25 | 2010-05-26 | 上海光达照明有限公司 | LED color temperature variable milky white cavity lamp |
CN102034922A (en) * | 2010-11-18 | 2011-04-27 | 宜兴市鼎圆光电科技有限公司 | High-power LED (Light Emitting Diode) lighting module and preparation method |
CN201925886U (en) * | 2010-12-23 | 2011-08-10 | 康佳集团股份有限公司 | Heat-dissipation structure based on thermoelectric separation LED (light-emitting diode) lamp |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104037301B (en) * | 2014-05-19 | 2017-06-30 | 伊韦尔(深圳)光电科技有限公司 | A kind of cob method for packing of LED lamp panel |
CN103996785A (en) * | 2014-06-04 | 2014-08-20 | 宁波亚茂照明电器有限公司 | Built-in drive full-angle light-emitting LED light source and packaging process |
CN106028631A (en) * | 2016-07-28 | 2016-10-12 | 广东欧珀移动通信有限公司 | PCB and mobile terminal with PCB |
CN111864040A (en) * | 2020-09-23 | 2020-10-30 | 歌尔股份有限公司 | Metal substrate and heating element |
CN113993298A (en) * | 2021-12-27 | 2022-01-28 | 深圳中科四合科技有限公司 | BGA component self-alignment structure and alignment method |
CN113993298B (en) * | 2021-12-27 | 2022-03-22 | 深圳中科四合科技有限公司 | BGA component self-alignment structure and alignment method |
CN114975753A (en) * | 2022-07-28 | 2022-08-30 | 东莞市湃泊科技有限公司 | Optical chip packaging base |
CN114975753B (en) * | 2022-07-28 | 2022-11-04 | 东莞市湃泊科技有限公司 | Optical chip packaging base |
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Application publication date: 20130424 |