CN100452457C - Optoelectronic semiconductor component and housing base for such a component - Google Patents
Optoelectronic semiconductor component and housing base for such a component Download PDFInfo
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- CN100452457C CN100452457C CNB2005800167954A CN200580016795A CN100452457C CN 100452457 C CN100452457 C CN 100452457C CN B2005800167954 A CNB2005800167954 A CN B2005800167954A CN 200580016795 A CN200580016795 A CN 200580016795A CN 100452457 C CN100452457 C CN 100452457C
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- semiconductor chip
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- part face
- encapsulating substance
- housing base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Abstract
The invention relates to an optoelectronic semiconductor component which comprises at least one semiconductor chip (1) emitting radiation (11), which is located in a recess (2) of a housing base (3). Said recess (2) is laterally delimited by an inner side (32) of a wall (31) encircling the semiconductor chip (1) and is at least partially filled with a cladding compound (4) that covers the semiconductor chip (1) and is easily permeable to electromagnetic radiation emitted by the semiconductor chip (1). An inner side (32) of the wall (31) delimiting the recess (2) is configured in such a manner that, when the front of the semiconductor chip is viewed from above, a subsection (33) of the inner side (32) is formed that completely encircles the semiconductor chip (1) and that, when viewed from the radiation-emitting semiconductor chip (1), is in the shadow and is at least partially covered by the cladding compound (4) which completely encircles the semiconductor chip (1). The invention also describes a housing base for said semiconductor component.
Description
The present invention relates to a kind of optoelectronic semiconductor component, and a kind of housing base.
In particular, the present invention relates to a kind of surface-mountable optoelectronic component, particularly relate to lead frame (Leadframe) basis, wherein semiconductor chip is arranged in the recess of housing base and is fixed on the there.Preferably, before being installed to semiconductor chip in the recess, prefabricated housing base.
For example, by 29 (1991) the 4th phases of Siemens Components, 147 to 149 pages disclose this semiconductor device.Traditionally for example mould material based on epoxy resin is used as encapsulating substance.But this mould material often is vulnerable to the influence of UV radiation.Under the influence of UV radiation, therefore these materials flavescence have relatively soon also reduced to export from the light of parts.
For the UV stability of the optoelectronic semiconductor component that improves radiated emission, suggestion is used based on encapsulating substance silicones or that be made of silicones.This encapsulating substance is being subjected to not flavescence or enough flavescence lentamente under the shortwave radiation influence.
But, this encapsulating substance brings such difficulty, promptly be exposed in a series of application under the situation among the UV, these materials can not be as epoxy resin for example reach sufficiently aging stable being connected with the employed material that the is used for housing base traditionally thermoplastic material of polyphtalamide (for example based on).Therefore, such encapsulating substance is used as in 29 (1991) fourth phases of Siemens Component, in the time of in 147 to 149 pages of illustrated traditional shell structure forms, exist to improve the danger that occurs leafing (Delamination) between housing base and the encapsulating substance, leafing begins and continues to develop at the top edge of recess to be advanced in the recess.In addition, also can cause chip package to break away from from housing base fully in the worst case.
Task of the present invention is, the semiconductor device or the housing base of the described type of beginning are provided, particularly a kind of surface-mountable semiconductor device or surface-mountable housing base that starts described type, wherein be reduced in the danger of leafing between encapsulating substance and the housing base, particularly the danger of leafing fully.Particularly should provide a kind of housing base, it is suitable for extremely microminiaturized photoelectron shell structure form, particularly is suitable for extremely microminiaturized light emitting diode construction form and photoelectric diode structure form.
This task solves by following semiconductor device, wherein this optoelectronic semiconductor component has the semiconductor chip that at least one sends radiation, described semiconductor chip is arranged in the recess of housing base, wherein said recess in the side by forming the border around the wall of described semiconductor chip interior and filling with encapsulating substance to small part, described encapsulating substance is to by the electromagnetic radiation that described semiconductor chip sent being transmissive well, it is characterized in that, the inboard of described wall is configured to, make in the vertical view in the front of described semiconductor device, described inboard has at least one part, from sending the semiconductor chip of radiation, described at least one part face is in the shade, described at least one part face to small part is covered by described encapsulating substance, and from described part face, described encapsulating substance is towards described semiconductor chip stretching, extension and hide described semiconductor chip, construct described at least one part face by at least one inclined-plane on the edge in the front of described wall, described at least one inclined-plane tilts towards described recess; Or this task solves by following housing base, wherein this housing base is used at least a semiconductor chip, described housing base has the recess that is used for the holding semiconductor chip, chip area is arranged in described recess, and described recess forms the border in the side by the inboard around the wall of described chip area, it is characterized in that, the inboard of described wall is configured to, make in the vertical view in the front of described housing base, described inboard has at least one part face, from described chip area, described part face is in the shade, and described inboard can use the encapsulating substance that is provided with in order to seal described semiconductor chip to small part to fill, make described encapsulating substance stretch and hide described semiconductor chip from described part face towards described semiconductor chip, wherein construct at least one part face of described inboard by at least one inclined-plane on the end in the front of described wall, described at least one inclined-plane tilts towards described recess.
Current, the front of semiconductor device or housing base always can be understood as in the vertical view of semiconductor device from appreciable that outer surface of the radiation direction of semiconductor device, therefore so recess enters the housing base from this outer surface, and pass this outer surface by the electromagnetic radiation that semiconductor chip produced and launch.
In semiconductor device according to the present invention, make up to form the wall on recess border in this wise, make in the vertical view in the front of semiconductor device, on wall
I) be configured with around the set a plurality of part faces that are blocked of semiconductor chip, perhaps
Ii) be configured with at least one at least in part, preferred fully around the part face that is blocked of semiconductor chip.
Current, particularly expression " is blocked ", each point basically from the zone of the emitted radiation of the semiconductor chip that sends radiation, the part face that relates to all is in the shade and covers to the encapsulated material of small part, and encapsulating substance stretches from the part face that relates to towards semiconductor chip and hides the part face that relates to.
A kind of according to the present invention in particularly preferred semiconductor device or the particularly preferred housing base, make up the wall that forms the recess border in this wise, make in the vertical view in the front of semiconductor device, on wall, be configured with fully annularly the part face that is blocked around semiconductor chip, particularly from each point basically in the zone of the emitted radiation of the semiconductor chip that sends radiation, this part face all is in the shade and it covers around semiconductor chip ground to the encapsulated material of small part fully, and encapsulating substance stretches from the part face that relates to towards semiconductor chip and covers this part face.
The part face that is blocked is particularly preferably just facing semiconductor chip from parts and is extending on funnel-form ground all the time, and wherein this part direction of facing semiconductor chip attenuates recess.
The part face that is blocked particularly preferably is arranged on the top edge of wall like this, make the three-phase boundary line of air/encapsulating substance/housing base on the part face that is blocked, extend fully, and thus not can or with the amount (for example because the reflection on the front of sealing) that sufficiently reduces be applied in from semiconductor chip, in the undesirable radiation in this position.
Preferably, the part face that at least one is blocked towards the structure pro of housing base, is particularly constructed on the end face in the front of wall on the edge of recess, perhaps itself is the end face in the front of wall.This can realize the part face that blocks with advantageously extremely saving the position and realize whole parts thus, and compares with traditional parts, and (reflection) recess does not have UV problem and epoxy to seal needn't be reduced.
Advantageously, the part face that at least one is blocked is can be technically special simply by at least one inclined-plane, former thereby preferably be configured on the edge in front of wall by ground, a unique inclined-plane for the position in case of necessity, and part faces the recess inclination.At this, the edge in the front of recess is constructed to funnel-form towards semiconductor chip.In a kind of favourable form of implementation, the end face of wall is configured to funnel-form at least in part and is counted as the part of recess thus at least in part on its whole width.
All the time the part face that is blocked of funnel-like configuration, as it by and possible of housing base according to expansion scheme of the present invention, has special advantage, be that it can be filled with encapsulating substance well, and with respect to traditional, from planform come read fortune with parts, because recess adopts according to geometry of the present invention,, can not dwindle recess so being used as the zone of reflector.
In the favourable expansion scheme of another kind, the part face that is blocked is by at least one inclined-plane, former thereby preferably be configured on the edge in front of wall by the inclined-plane of spill on unique cross section of wall for the position in case of necessity.By this expansion scheme, shine under the situation on the wall part face that also can obtain to be blocked even have bigger recess and radiation level land at housing base.
Particularly preferably use in semiconductor device according to housing base of the present invention, this semiconductor device is provided with to the semiconductor chip of small part emission UV radiation, as launch blue light or UV radiation, based on the light-emitting diode chip for backlight unit of nitride compound semiconductor material, it is explanation and therefore further not setting forth at this in WO 01/39282A2 for example.
In this context, " based on the nitride material " expression, the epitaxial loayer sequence or at least a portion epitaxial loayer sequence that produce radiation comprise nitride III/V compound semiconductor materials, preferably Al
nGa
mIn
1-n-mN, wherein 0≤n≤1,0≤m≤1 and n+m≤1.At this, this material needn't necessarily have according to forming accurately on the mathematics of above-mentioned molecular formula.Or rather, it can have one or more dopant materials and additional part, and these parts do not change Al basically
nGa
mIn
1-n-mThe physical characteristic that characteristics are arranged of one of N material.Yet reason for the sake of simplicity, even can part be replaced by a spot of other material, top molecular formula still only comprises lattice (Al, Ga, In, chief component N).
Encapsulating substance is preferably with silicone material and particularly based on silicones.The viscosity of the glue of encapsulating material can help further to reduce risk of delamination.
further reduce risk of delamination aspect, retaining element (Verankerungselement) can be favourable, it is configured in by the part face that the inboard is blocked, on the part face that preferable configuration is blocked to the inboard, and put in the encapsulating substance from the part face that is blocked or from remaining inboard of recess.Preferably, this retaining element is distributed on the part face that is blocked equably, promptly is provided with the spacing that equates basically each other.
Be suitable as retaining element from outstanding fixedly nose, fixed block or the fixing rib of part face that is blocked.Retaining element is particularly preferably hidden by encapsulating substance fully, promptly covers.For this reason, the material level of encapsulating substance in recess is particularly high in this wise, makes encapsulating substance cover retaining element fully.This has prevented from leafing again and has also made by the further processing component of traditional fetching device to become easy.
Advantageously, this retaining element can help in addition: be received in encapsulating material in the recess in the liquid state, as silicones, owing to rise along retaining element by the power that capillarity produced of encapsulating material, help the wetting part face that is blocked and the top edge of recess thus.
Correspondingly, above-mentioned task was led to particularly a kind of semiconductor device and was solved, wherein the encapsulating substance at least one the part face that is blocked on the outward flange of the recess of housing base forms sealing strip, the wherein said part face that is blocked is all blocked the radiation that semiconductor chip sent at least basically, and therefore sealing strip is blocked the radiation of chip as much as possible.Particularly preferably be, fully continued the sealing ring that blocks annularly around the structure of the encapsulating substance on the part face that is blocked of semiconductor chip.
Preferably, the remainder of recess is configured to the reflector of the radiation of being sent by semiconductor chip.
In a kind of particularly preferred form of implementation, housing base particularly is formed on the metal lead wire frame (Leadframe) that is made of the plastics Modeling Material by injection method and/or pressing method.
Can sneak into luminescent material in encapsulating substance, luminescent material absorbs compares the radiation that changes wavelength by a part and the emission of semiconductor chip institute radiation emitted with absorbed radiation.Equally, semiconductor chip can be provided with comprise luminescent material outer shell.Can make the light-emitting diode parts in simple mode thus, these light-emitting diode parts can send the light of colour mixture or (farbangepasstes) light of color matching.Suitable luminescent material is for example at WO 97/50132 with illustrate that in WO98/12757A1 their disclosure is included this paper by reference in.
Preferably, the edge of the outermost of the edge of the outermost of the top edge of recess or the part face that is blocked is smooth as much as possible, does not promptly have striped, recess, shrinkage cavity or the like.This has advantageously reduced the danger that encapsulating material overflows when filling recess.Retaining element does not preferably reach the outward flange of recess in case of necessity, so that guarantee smooth edge.
Like the described content class of parts according to the present invention, being suitable for of front according to housing base of the present invention.
Not only can advantageously use in the parts of emitted radiation according to parts shell of the present invention (housing base+encapsulating substance), the semiconductor chip of these parts is particularly to small part emission UV radiation, and in can advantageously (for example having improved thermal endurance) and using at the parts that detect radiation, as photodiode parts and photoelectric crystal duct member.
The parts shell (housing base+encapsulating substance) of being constructed according to the present invention can realize having the planform of very little comparatively speaking size, because recess is on the front side end of housing base, promptly directly just have the part face that is in the shade at the inwall from recess to the transition of the external front face of housing base.
Another special advantage is, " three-phase " boundary line of housing base/encapsulating substance/air (perhaps atmosphere around other) does not expose or only is exposed in the semiconductor chip radiation that has obviously reduced.
From following explanation, obtain other advantages of parts or housing base and favourable improvement project with reference to 1 to 6 couple of embodiment of accompanying drawing.Wherein:
Fig. 1 shows by the schematic diagram according to the cross sectional view of first embodiment of parts of the present invention,
Fig. 2 shows by the schematic diagram according to the cross sectional view of second embodiment of parts of the present invention,
Fig. 3 shows by the schematic diagram according to the cross sectional view of the 3rd embodiment of parts of the present invention,
Fig. 4 shows the schematic diagram by another cross sectional view of second embodiment,
Fig. 5 shows the schematic diagram of perspective plan view of the housing base of first embodiment,
Fig. 6 shows the schematic diagram of perspective plan view of the housing base of the 3rd embodiment.
In these accompanying drawings, these embodiment identical or act on identical part and name and be provided with identical reference number respectively in the same manner.The schematic diagram that these accompanying drawings can not be considered as in principle and actual device ratio according to the present invention meets.Or rather, for better understanding, the single part of the embodiment in these accompanying drawings can be exaggerated or represent not according to the real size of basis each other.
Parts that schematically show in these accompanying drawings or housing base are respectively surface-mountable so-called side-looking light-emitting diode parts (Sidelooker-Leuchtdiodenbauelement) or the surface-mountable housing base 3 that is used for such light-emitting diode parts, it has the light-emitting diode chip for backlight unit 1 of especially launching the UV radiation in case of necessity, for example based on light-emitting diode chip for backlight unit 1 InGaN, the emission visible blue, this light-emitting diode chip for backlight unit the be supposed to ground or the ground additional emission UV radiation that is not supposed to.Such light-emitting diode chip for backlight unit has for example illustrated in WO 01/39282A2 and has not therefore further specified at this.
Parts shell and housing base illustrated in this context also are suitable for being applied in the light-emitting diode chip for backlight unit of other type in principle, and the parts that are used for launching IR, and these parts are particularly used and are provided with at high temperature.
In the chip area of housing base 3 (by zone 21 expressions of dotted line among Fig. 1 to 4), light-emitting diode chip for backlight unit 1 is installed on the chip coupling part of electricity of metal lead wire frame (leadframe) 6, and links to each other by the line join domain of closing line 5 with the line coupling part 61 of lead frame 6, that separate with chip coupling part 62 electricity, electricity.
Can use at present the light-emitting diode chip for backlight unit of other type ground contact equally, as the light-emitting diode chip for backlight unit of the installation of falling the chip, wherein the anode contact contacts on the side that is arranged on chip and towards lead frame with negative electrode.Only to mate mounting technique at this.
Have recess 2, that for example be injection molding or be positioned on the lead frame 6 by the housing base 3 of die casting by thermoplastics (for example be filled with titanium oxide or silica and/or glass fibre, based on the pressed material of polyphtalamide).Light-emitting diode chip for backlight unit 1 is arranged in recess 2, and light-emitting diode chip for backlight unit for example is fixed on the chip coupling part 62 conductively by conductive adhesive.
Encapsulating substance 4 for example comprise based on the radiation transmission of silicone, bright, gluey mould material for example, this mould material is mixed with luminescent material powder 7, for example based on YAG:Ce, based on TbAG:Ce or based on the luminescent material powder of TbYAG:Ce.Such luminescent material is for example open in WO98/12757 and WO 01/08452, and their disclosure is included this paper in by reference at this.
In the parts of the primary radiation that should only send light-emitting diode chip for backlight unit 1, encapsulating material 4 can be based on silicone, bright, gluey mould material.Alternatively, mould material can be provided with and overflow anti-body particle also therefrom by deepening.
The inboard 32 on the border of formation recess 2 has towards the inside of recess 2 downward in the end in the front of wall 31, promptly towards semiconductor 1 tilt and complete inclined-plane 331 around recess.This inclined-plane 331 produces part face 33, in the vertical view in the front of semiconductor device, see, this part face is fully annularly around semiconductor chip 1, from the point in all fronts of semiconductor chip 1, the part face is in the shade fully and covers around semiconductor chip 1 ground to the encapsulated material 4 of small part fully.The front edge of recess constitutes funnel-form.The part face that is blocked is the end face in the front of wall 31 simultaneously.
According to the difference of second embodiment of Fig. 2 and 4 and first embodiment described above particularly in, inboard 32 annularly around, the part face 33 that is blocked by the end face in the front of wall 31, construct at the oblique angle (Abschraegung) 332 of spill on cross section.
According to the difference of the 3rd embodiment of Fig. 2 and 6 and first embodiment described above particularly in, annularly around the part face 33 that is blocked on a plurality of retaining elements 24 of structure, distribute around recess 2 equably in the form of this retaining element with fixed block.These fixed blocks but do not penetrate encapsulating substance from encapsulating substance 4 is stretched into in the part face 33s that are blocked, promptly its encapsulated material 4 hides fully.From semiconductor 1, encapsulating substance is looped around on the part face 33 that is blocked continuously in retaining element 24 back.
For all embodiment, housing base 3 is one with retaining element 24 preferable configuration all and preferably finishes manufacturing in a unique injection moulding process or press casting procedure.
Also can be used for the semiconductor chip of receiver radiation with corresponding housing base of these embodiment and encapsulating substance, as photodiode chip.So photodiode chip can replace light-emitting diode chip for backlight unit 1.Also be suitable for use in laser diode parts, detector member and the high temperature application according to planform of the present invention equally.
Apparently, the explanation of technology according to the present invention being instructed according to embodiment can not be interpreted as and limit the invention to this.Or rather, for example all have the recess that is used for the holding semiconductor chip and on the front edge of recess around, the parts and the housing base on the inclined-plane that blocks semi-conductive radiation or the like all use according to technology instruction of the present invention.
Claims (29)
1, a kind of optoelectronic semiconductor component, it has at least one semiconductor chip that sends radiation (11) (1), described semiconductor chip is arranged in the recess (2) of housing base (3), wherein said recess (2) forms the border in the side by the inboard (32) around the wall (31) of described semiconductor chip (1) and fills with encapsulating substance (4) to small part, described encapsulating substance is a transmissive well to the electromagnetic radiation of being sent by described semiconductor chip (1), it is characterized in that, the inboard (32) of described wall (31) is configured to, make in the vertical view in the front of described semiconductor device, described inboard has at least one part face (33), from the semiconductor chip (1) that sends radiation, described at least one part face is in the shade, described at least one part face to small part is covered by described encapsulating substance (4), and from described part face, described encapsulating substance (4) stretches and hides described semiconductor chip towards described semiconductor chip (1), construct described at least one part face (33) by at least one inclined-plane (331) on the edge in the front of described wall (31), described at least one inclined-plane tilts towards described recess.
2, a kind of optoelectronic semiconductor component, it has at least one semiconductor chip that sends radiation (11) (1), described semiconductor chip is arranged in the recess (2) of housing base (3), wherein said recess (2) forms the border in the side by the inboard (32) around the wall (31) of described semiconductor chip (1) and fills with encapsulating substance (4) to small part, described encapsulating substance is a transmissive well to the electromagnetic radiation of being sent by described semiconductor chip (1), it is characterized in that, the inboard (32) of described wall (31) is configured to, make in the vertical view in the front of described semiconductor device, described inboard has at least one part face (33), from the semiconductor chip (1) that sends radiation, described at least one part face is in the shade, described at least one part face to small part is covered by described encapsulating substance (4), and from described part face, described encapsulating substance (4) stretches and hides described semiconductor chip towards described semiconductor chip (1), by described wall (31), at least one part face (33) of described inboard (32) is constructed at the oblique angle (332) of spill at least one cross section on its front edge.
3, according to claim 1 or 2 described semiconductor devices, it is characterized in that, the inboard (32) of described wall (31) is configured to, make in the vertical view in the front of described semiconductor device, described inboard has a plurality of part faces (33) that are provided with around described semiconductor chip, from the semiconductor chip (1) that sends radiation, these part faces are in the shade and are covered by described encapsulating substance (4) to small part, and from these part faces, described encapsulating substance (4) stretches and hides described semiconductor chip towards described semiconductor chip (1).
4, according to claim 1 or 2 described semiconductor devices, it is characterized in that, the inboard (32) of described wall (31) is configured to, make in the vertical view in the front of described semiconductor device, described inboard has the part face (33) of complete ring-type around described semiconductor chip (1), from the semiconductor chip (1) that sends radiation, described part face is in the shade and covers to the encapsulated material of small part (4) around described semiconductor chip fully (1).
5, according to claim 1 or 2 described semiconductor devices, it is characterized in that, on the edge of described inboard (32) towards at least one part face (33) of the described inboard of positive surface construction (32) of described housing base (3).
According to claim 1 or 2 described semiconductor devices, it is characterized in that 6, the described part face of at least one of described inboard (32) (33) is the front of described housing base (3).
According to claim 1 or 2 described semiconductor devices, it is characterized in that 7, described semiconductor chip (1) has the material that is suitable for to small part emission UV radiation.
According to claim 1 or 2 described semiconductor devices, it is characterized in that 8, described encapsulating substance (4) comprises the material based on silicone.
According to claim 1 or 2 described semiconductor devices, it is characterized in that 9, described encapsulating substance (4) has gluey viscosity.
According to claim 1 or 2 described semiconductor devices, it is characterized in that 10, be configured with at least one retaining element (24) at least one part face (33) of described inboard (32), it stretches in the described encapsulating substance (4).
11, semiconductor device according to claim 10, it is characterized in that, be provided with a plurality of retaining elements (24) at least one part face (33) of described inboard (32), these retaining elements stretch in the described encapsulating substance (4) from described part face (33) with going up distribution.
12, semiconductor device according to claim 11, it is characterized in that, described retaining element is configured to from fixedly nose, fixed block or the fixing rib of at least one part face (33) protrusion of described inboard (32), and described encapsulating substance (4) is covered described retaining element.
According to claim 1 or 2 described semiconductor devices, it is characterized in that 13, described encapsulating substance (4) is gone up the continuous seal ring of structure around described recess (2) at least one part face (33) of described inboard (32).
According to claim 1 or 2 described semiconductor devices, it is characterized in that 14, described recess (2) is configured to the reflector of the radiation of being sent by described semiconductor chip.
According to claim 1 or 2 described semiconductor devices, it is characterized in that 15, the described housing base (3) on metal lead wire frame (6) particularly comes prefabricated by the plastics Modeling Material by injection moulding or die casting integratedly.
16, according to claim 1 or 2 described semiconductor devices, it is characterized in that, described encapsulating substance (4) comprises at least a luminescent material, described luminescent material is suitable for absorbing the part by described semiconductor chip institute radiation emitted, and emission has the radiation of comparing the wavelength that has changed with the radiation that is absorbed.
17, according to claim 1 or 2 described semiconductor devices, it is characterized in that, described semiconductor chip has at least a luminescent material, described luminescent material is suitable for absorbing the part by described semiconductor chip institute radiation emitted, and emission has the radiation of comparing the wavelength that has changed with the radiation that is absorbed.
18, a kind of housing base, it is used at least a semiconductor chip (1), described housing base has the recess (2) that is used for holding semiconductor chip (1), chip area (21) is arranged in described recess, and described recess forms the border in the side by the inboard (32) around the wall (31) of described chip area (21), it is characterized in that, the inboard (32) of described wall (31) is configured to, make in the vertical view in the front of described housing base, described inboard has at least one part face (33), from described chip area (21), described part face is in the shade, and described inboard can use the encapsulating substance that is provided with in order to seal described semiconductor chip (1) to small part to fill, make that (stretch and hide described semiconductor chip towards described semiconductor chip (1) by 33)s from described part face for described encapsulating substance, wherein construct at least one part face (33) of described inboard (32) by at least one inclined-plane (331) on the end in the front of described wall (31), described at least one inclined-plane tilts towards described recess.
19, a kind of housing base, it is used at least a semiconductor chip (1), described housing base has the recess (2) that is used for holding semiconductor chip (1), chip area (21) is arranged in described recess, and described recess forms the border in the side by the inboard (32) around the wall (31) of described chip area (21), it is characterized in that, the inboard (32) of described wall (31) is configured to, make in the vertical view in the front of described housing base, described inboard has at least one part face (33), from described chip area (21), described part face is in the shade, and described inboard can use the encapsulating substance that is provided with in order to seal described semiconductor chip (1) to small part to fill, make that (stretch and hide described semiconductor chip towards described semiconductor chip (1), wherein by described wall (31) by 33)s from described part face for described encapsulating substance, at least one part face (33) of described inboard (32) is constructed at the oblique angle (332) of spill at least one cross section on its positive end.
20, according to claim 18 or 19 described housing bases, it is characterized in that, the inboard (32) of described wall (31) is configured to, make in the vertical view in the front of described housing base, described inboard has a plurality of part faces (33) that are provided with around described chip area (21), from described chip area (21), these part faces are in the shade, and described inboard can use in order to seal described semiconductor chip (1) to small part the encapsulating substance that is provided with to fill, and makes that (stretch and hide described semiconductor chip towards described semiconductor chip (1) by 33)s from described part face for described encapsulating substance.
21, according to claim 18 or 19 described housing bases, it is characterized in that, the inboard (32) of described wall (31) is configured to, make in the vertical view in the front of described housing base, described inboard has fully annularly the part face (33) around described chip area (21), from described chip area (21), described part face is in the shade, and can use in order to seal described semiconductor chip (1) to small part the encapsulating substance that is provided with to fill, make that (stretch and hide described semiconductor chip towards described semiconductor chip (1) by 33)s from described part face for described encapsulating substance.
22, according to claim 18 or 19 described housing bases, it is characterized in that, on the edge of described inboard (32) towards at least one part face (33) of the described inboard of positive surface construction (32) of described housing base (3).
According to claim 18 or 19 described housing bases, it is characterized in that 23, at least one part face (33) of described inboard (32) is the front of described housing base (3).
According to claim 18 or 19 described housing bases, it is characterized in that 24, at least one is used for the retaining element (24) of described encapsulating substance (4) to go up structure at least one part face (33) of described inboard (32).
25, housing base according to claim 24 is characterized in that, goes up at least one part face (33) of described inboard (32) a plurality of retaining elements (24) that are used for described encapsulating substance (4) are set with distributing.
26, housing base according to claim 25, it is characterized in that, described recess (2) is configured to, make and see internally, outside in described retaining element (24), the described encapsulating substance (4) at least one part face (33) of described inboard (32) can form the continuous seal ring around described recess (2).
According to claim 18 or 19 described housing bases, it is characterized in that 27, described recess (2) is configured to reflector.
According to claim 18 or 19 described housing bases, it is characterized in that 28, the described housing base (3) on metal lead wire frame (6) comes prefabricated by injection moulding or die casting.
29, according to claim 18 or 19 described housing bases, described housing base is used to have the semiconductor device that sends radiation of at least one semiconductor chip that sends radiation (11) (1).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004026858.4 | 2004-05-31 | ||
| DE102004026858 | 2004-05-31 | ||
| DE102004040468.2 | 2004-08-20 |
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| CN1957482A CN1957482A (en) | 2007-05-02 |
| CN100452457C true CN100452457C (en) | 2009-01-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005800167954A Active CN100452457C (en) | 2004-05-31 | 2005-05-12 | Optoelectronic semiconductor component and housing base for such a component |
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| Country | Link |
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| CN (1) | CN100452457C (en) |
| DE (1) | DE102004040468B4 (en) |
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| CN115249749B (en) * | 2021-04-25 | 2024-01-16 | 同方威视技术股份有限公司 | Encapsulation structure of tellurium-zinc-cadmium detector |
| DE102021130173A1 (en) * | 2021-11-18 | 2023-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | ELECTRONIC DEVICE AND METHOD OF MAKING AN ELECTRONIC DEVICE |
| DE102021130545B3 (en) | 2021-11-23 | 2022-12-29 | Turck Holding Gmbh | Electronic component and method for manufacturing an electronic component |
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| DE19955747A1 (en) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optical semiconductor device with multiple quantum well structure, e.g. LED, has alternate well layers and barrier layers forming super-lattices |
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| CN1355571A (en) * | 2000-11-23 | 2002-06-26 | 诠兴开发科技股份有限公司 | Packaging method for LED |
| CN1455960A (en) * | 2001-01-24 | 2003-11-12 | 日亚化学工业株式会社 | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE102004040468A1 (en) | 2005-12-22 |
| DE102004040468B4 (en) | 2022-02-03 |
| CN1957482A (en) | 2007-05-02 |
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