CN104901519A - Multi-adaptation drive circuit with low ripple noise IGBT and method - Google Patents
Multi-adaptation drive circuit with low ripple noise IGBT and method Download PDFInfo
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- CN104901519A CN104901519A CN201510270002.7A CN201510270002A CN104901519A CN 104901519 A CN104901519 A CN 104901519A CN 201510270002 A CN201510270002 A CN 201510270002A CN 104901519 A CN104901519 A CN 104901519A
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Abstract
In order to solve the technical problems in the prior art, the invention provides a multi-adaptation drive circuit with low ripple noise IGBT and a method. A conformable driving resistor IGBT drive circuit based on a master control chip is constructed, and linear power conversion drives voltage low-ripple noise and effectively lowers IGBT heat consumption due to excessive driving voltage ripples. The transformable driving resistor can be configured flexibly to be suitable for driving IGBTs manufactured by different manufacturers. The driving resistor and the discharging resistor are each realized by parallelly connecting a plurality of resistors, and the driving resistor and the discharging resistor are configured by control signals emitted by the control chip. The realization means is flexible, and a hardware structure does not have to be changed. When protection process occurs, the current change rate and the voltage change rate can be effectively lowered, the IGBT driving reliability is improved, and the use risk is lowered.
Description
Technical field
The present invention relates to IGBT drive circuit and method, particularly relate to a kind of IGBT drive circuit and method of low ripple noise.
Background technology
IGBT (insulated gate bipolar transistor), as a kind of power semiconductor of plyability, because it is low in energy consumption, current capacity large, switching frequency is higher, obtains applying more and more widely in high power converter.Along with IGBT is in the deep development in the fields such as flexible DC power transmission, electric locomotive, high ferro, are related to the reliability of whole system in its robustness and useful life.
The driving resistance Rg of well-known IGBT affects IGBT to drive one of key factor of quality; and the IGBT of same specification for different manufacturers; especially high-power IGBT; due to the manufacturing process of employing and the difference of designing technique; make IGBT grid different from the parasitic capacitance between source electrode, the charging charge causing IGBT to drive is not of uniform size, and required driving resistance Rg is also different; except to driving function effect except, Rg is also most important to the defencive function of IGBT.So select suitable Rg to be the key of drive circuit, it directly determines useful life and the reliability of IGBT device.
The general way of current high-power IGBT driver module, for the IGBT of each producer different model, can weld the driving resistance Rg of different resistance, and product type too much can be unfavorable for producing management and control in enormous quantities.
Summary of the invention
In order to solve the problems of the prior art, the present invention proposes a kind of many adaptations IGBT drive circuit and method of low ripple noise, by building the IGBT drive circuit based on the convertible driving resistance of main control chip, utilize linear power supply to convert and realize driving voltage low ripple noise, and configuring convertible driving resistance by control chip flexibly, the IGBT being applicable to different driving producer drives.
The present invention is achieved through the following technical solutions:
Based on an IGBT drive circuit for the convertible driving resistance of main control chip, the grid of described IGBT connects convertible driving resistance and convertible discharge resistance, and described convertible driving resistance comprises R
u1, R
u2... R
uNthe multichannel formed in parallel drives resistance, and described convertible discharge resistance comprises R
d1, R
d2... R
dNthe multichannel discharge resistance formed in parallel; Described control switch comprises S
u1, S
u2... S
uNthe multichannel driving switch formed, S
d1, S
d2... S
dNthe multichannel discharge switch formed; Described multichannel driving switch S
u1, S
u2... S
uNone end connects driving voltage+15V, and the other end connects driving resistance R respectively
u1, R
u2... R
uNone end; Described multichannel discharge switch S
d1, S
d2... S
dNone end connects shutoff voltage-9V, and the other end connects discharge resistance R respectively
d1, R
d2... R
dNone end; Drive resistance R
u1, R
u2... R
uNthe other end and discharge resistance R
d1, R
d2... R
dNthe other end be connected with the grid of described IGBT respectively; Described main control chip controls the grid opening or turn off realization corresponding driving resistance and discharge resistance access IGBT of described multichannel driving switch and multichannel discharge switch.
As a further improvement on the present invention, described main control chip is that CPLD or FPGA etc. has concurrent operation ability process chip.
As a further improvement on the present invention, described IGBT drive circuit also comprises the low ripple noise auxiliary source based on linear power supply, and its main power topology adopts push-pull circuit, and described push-pull circuit comprises switching tube Q
push, Q
pull, transformer TX1, diode is by D1, D2, D3; By control chip switch tube Q
push, Q
pullcontrol, the power supply source Source1 of push-pull circuit is converted to chopping signal, and the transformation through transformer TX1 is transformed into secondary; Obtain-9V the voltage of the shutoff that IGBT is provided through conversion ,+15V the voltage of the driving of IGBT, the supply power voltage of main control chip and the driving voltage of control switch are provided.
As a further improvement on the present invention, the drive circuit of described driving switch by switching tube Q2, Q3, resistance R
uDrvform; Described switching tube Q2 is NMOS tube, and the signal of Q2 is driving pulse PWM
uN, the source electrode of Q2 meets+10V; Described switching tube Q3 is PMOS, and the signal of Q3 is driving pulse PWM
uN, the source electrode of Q3 meets+15V; The drain electrode of Q2, Q3 is respectively by driving resistance R
uDrvbe connected to the grid of described driving switch.
As a further improvement on the present invention, the drive circuit of described discharge switch by switching tube Q4, Q5, resistance R
dDrvform; Described switching tube Q4 is NMOS tube, and the signal of Q4 is driving pulse PWM
dN, the source electrode of Q4 meets-9V; Described switching tube Q5 is PMOS, and the signal of Q5 is driving pulse PWM
dN, the source electrode of Q5 meets-3V; The drain electrode of Q4, Q5 is respectively by driving resistance R
dDrvbe connected to the grid of described discharge switch.
Another aspect of the present invention, provide a kind of many adaptation IGBT driving methods of low ripple noise, described method is based on IGBT drive circuit of the present invention, and described main control chip is converted to PWM through isolating chip
u1, PWM
u2... PWM
uN, control described multichannel driving switch S respectively
u1, S
u2... S
uN, make to drive resistance to access the grid of IGBT accordingly, realize IGBT open-minded by required driving resistance; Described main control chip is converted to PWM through isolating chip
d1, PWM
d2... PWM
dN, control described multichannel discharge switch S respectively
d1, S
d2... S
dN, make corresponding discharge resistance access the grid of IGBT, realize IGBT and turn off by required discharge resistance.
Accompanying drawing explanation
Fig. 1 is the IGBT drive circuit figure of the convertible driving resistance based on main control chip of the present invention;
Fig. 2 is the low ripple noise auxiliary source circuit figure based on linear power supply of the present invention;
Fig. 3 is the drive circuit figure of control switch of the present invention;
Fig. 4 is each node signal oscillogram.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, described control switch comprises S to the IGBT drive circuit of the convertible driving resistance based on main control chip of the present invention
u1, S
u2... S
uNthe multichannel driving switch formed, S
d1, S
d2... S
dNthe multichannel discharge switch formed.Described convertible driving resistance comprises R
u1, R
u2... R
uNthe multichannel formed in parallel drives resistance, R
d1, R
d2... R
dNthe multichannel discharge resistance formed in parallel.Described multichannel driving switch S
u1, S
u2... S
uNone end connects driving voltage+15V, and the other end connects driving resistance R respectively
u1, R
u2... R
uNone end.Described multichannel discharge switch S
d1, S
d2... S
dNone end connects shutoff voltage-9V, and the other end connects discharge resistance R respectively
d1, R
d2... R
dNone end.Drive resistance R
u1, R
u2... R
uNthe other end connect discharge resistance R
d1, R
d2... R
dNthe other end.Described control chip configuration driven resistance is opening or turning off realization by control switch.Control multichannel driving switch S
u1, S
u2... S
uNdriving pulse be respectively PWM
u1, PWM
u2... PWM
uN, work as PWM
u1, PWM
u2... PWM
uNcorresponding pulse makes S
u1, S
u2... S
uNwhen opening, can control to drive resistance to access the grid of IGBT (Q1) accordingly, realize IGBT open-minded by required driving resistance.Multichannel discharge switch S
d1, S
d2... S
dNdriving pulse be respectively PWM
d1, PWM
d2... PWM
dN.Work as PWM
d1, PWM
d2... PWM
dNcorresponding pulse makes S
d1, S
d2... S
dNwhen opening, the grid of corresponding discharge resistance access IGBT (Q1) can be controlled, realize IGBT and turn off by required discharge resistance.Described main control chip is that CPLD (CPLD) or FPGA (field programmable gate array) etc. have concurrent operation ability process chip.
First the low ripple noise auxiliary source based on linear power supply is built, as shown in Figure 2.Main power topology adopts push-pull circuit.Described push-pull circuit is by switching tube Q
push, Q
pull, transformer TX1, one-way commutation diode D1, D2, D3 form.By control chip switch tube Q
push, Q
pullcontrol, the power supply source Source1 of push-pull circuit is converted to chopping signal, and the transformation through transformer TX1 is transformed into secondary.Chopping signal Source2 becomes direct voltage by rectifier diode D1 and filter capacitor C1, and passes through three-terminal voltage-stabilizing chip U1 by DC voltage stability to-9V, and provide the shutoff voltage of IGBT, wherein C2 is the electric capacity of voltage regulation of-9V voltage.Chopping signal Source3 becomes direct voltage by rectifier diode D2 and filter capacitor C4, and passes through three-terminal voltage-stabilizing chip U2 by DC voltage stability to+15V, and provide the driving voltage of IGBT, wherein C5 is the electric capacity of voltage regulation of+15V voltage.Chopping signal Source4 becomes direct voltage by rectifier diode D3 and filter capacitor C7, and pass through three-terminal voltage-stabilizing chip U3 by DC voltage stability to+3.3V, there is provided the supply power voltage of main control chip CPLD or FPGA, wherein C8 is the electric capacity of voltage regulation of+3.3V voltage.
For making S
u1, S
u2... S
uNswitching tube is open-minded, by U5 ,+15V is changed out+10V source of stable pressure, and wherein GND is as the input of U5, and+15V, as the ground of U5, converts out+10V by voltage stabilizing chip U5, and C6 is the electric capacity of voltage regulation of+10V.
For making S
d1, S
d2... S
dNswitching tube is open-minded, by U4 ,-9V is changed out-3V source of stable pressure, and wherein GND is as the input of U4, and-9V, as the ground of U4, converts out-3V by voltage stabilizing chip U4, and C3 is the electric capacity of voltage regulation of-3V.
Next builds switch S
u1, S
u2... S
uNand S
d1, S
d2... S
dNdrive circuit, as shown in Figure 3.
With S
uNdrive circuit is example, its drive circuit by switching tube Q2, Q3, resistance R
uDrvform.The driving pulse PWM of described switching tube Q2, Q3
uNchanged through isolating chip by main control chip, by the 0V (low level) of main control chip, 3.3V (high level) level, be converted to 10V (low level), 15V (high level), because circuit is comparatively simple herein, no longer launch to describe at this.
Described switching tube Q2 is NMOS, and its signal is described driving pulse PWM
uN, the source electrode of Q2 meets+10V, as driving pulse PWM
uNdrive singal when being high level+15V, Q2 conducting, its drain electrode is connected to+10V.Described switching tube Q3 is PMOS, and its signal is described driving pulse PWM
uN, the source electrode of Q3 meets+15V, as driving pulse PWM
uNdrive singal when being low level+10V, Q3 conducting, its drain electrode is connected to+15V.The drain electrode of Q2, Q3 is by driving resistance R
uDrvbe connected to switching tube S
uNgrid.
Described switching tube S
uNfor PMOS, its signal is described driving pulse PWM
uDrv, its source electrode meets+15V, as driving pulse PWM
uDrvdrive singal when being low level+10V, S
uNconducting, will drive resistance R
uNaccess IGBT grid.
With S
dNdrive circuit is example, its drive circuit by switching tube Q4, Q5, resistance R
dDrvform.The driving pulse PWM of described switching tube Q4, Q5
dNchanged through isolating chip by main control chip, by the 0V (low level) of main control chip, 3.3V (high level) level, be converted to-9V (low level) ,-3V (high level), because circuit is comparatively simple herein, no longer launch to describe at this.
Described switching tube Q4 is NMOS, and its signal is described driving pulse PWM
dN, the source electrode of Q4 meets-9V, as driving pulse PWM
dNdrive singal when being high level-3V, Q4 conducting, its drain electrode is connected to-9V.Described switching tube Q5 is PMOS, and its signal is described driving pulse PWM
dN, the source electrode of Q5 meets-3V, as driving pulse PWM
dNdrive singal when being low level-9V, Q3 conducting, its drain electrode is connected to-3V.The drain electrode of Q4, Q5 is by driving resistance R
dDrvbe connected to switching tube S
dNgrid.
Described switching tube S
dNfor NMOS, its signal is described driving pulse PWM
dDrv, its source electrode meets-9V, as driving pulse PWM
uDrvdrive singal when being high level-3V, S
dNconducting, will drive resistance R
uNaccess IGBT grid.
To sum up, can realize converting based on linear power supply of the present invention's structure, realize driving voltage low ripple noise, and be configured the IGBT driving of convertible driving resistance by control chip flexibly, each point drive waveforms as shown in Figure 4.
Many adaptations drive circuit of the low ripple noise for high-power IGBT that the present invention proposes and method have following characteristics:
1. drive resistance to be realized by multiple resistor coupled in parallel, send control signal by control chip and carry out configuration driven resistance, implementation is flexible, does not change hardware configuration.
2. discharge resistance is realized by multiple resistor coupled in parallel, sends control signal carry out configuration driven resistance by main control chip, and implementation is flexible, does not change hardware configuration.
3. when protection act occurs, effectively can reduce current changing rate (di/dt) and voltage change ratio (dv/dt), improve the reliability that IGBT drives, reduce its application risk.
4. this driving method is converted by linear power supply, reduces the Ripple Noise of driving voltage, effectively reduces the IGBT hear rate caused because driving voltage ripple is excessive.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, some simple deduction or replace can also be made, all should be considered as belonging to protection scope of the present invention.
Claims (6)
1. based on an IGBT drive circuit for the convertible driving resistance of main control chip, the grid of described IGBT connects convertible driving resistance and convertible discharge resistance, it is characterized in that: described convertible driving resistance comprises R
u1, R
u2... R
uNthe multichannel formed in parallel drives resistance, and described convertible discharge resistance comprises R
d1, R
d2... R
dNthe multichannel discharge resistance formed in parallel; Described control switch comprises S
u1, S
u2... S
uNthe multichannel driving switch formed, S
d1, S
d2... S
dNthe multichannel discharge switch formed; Described multichannel driving switch S
u1, S
u2... S
uNone end connects driving voltage+15V, and the other end connects driving resistance R respectively
u1, R
u2... R
uNone end; Described multichannel discharge switch S
d1, S
d2... S
dNone end connects shutoff voltage-9V, and the other end connects discharge resistance R respectively
d1, R
d2... R
dNone end; Drive resistance R
u1, R
u2... R
uNthe other end and discharge resistance R
d1, R
d2... R
dNthe other end be connected with the grid of described IGBT respectively; Described main control chip controls the grid opening or turn off realization corresponding driving resistance and discharge resistance access IGBT of described multichannel driving switch and multichannel discharge switch.
2. IGBT drive circuit according to claim 1, is characterized in that: described main control chip is CPLD or FPGA.
3. IGBT drive circuit according to claim 1, is characterized in that: described IGBT drive circuit also comprises the low ripple noise auxiliary source based on linear power supply, and its main power topology adopts push-pull circuit, and described push-pull circuit comprises switching tube Q
push, Q
pull, transformer TX1, diode is by D1, D2, D3; By control chip switch tube Q
push, Q
pullcontrol, the power supply source Source1 of push-pull circuit is converted to chopping signal, and the transformation through transformer TX1 is transformed into secondary; Obtain-9V the voltage of the shutoff that IGBT is provided through conversion ,+15V the voltage of the driving of IGBT, the supply power voltage of main control chip and the driving voltage of control switch are provided.
4. IGBT drive circuit according to claim 1, is characterized in that: the drive circuit of described driving switch by switching tube Q2, Q3, resistance R
uDrvform; Described switching tube Q2 is NMOS tube, and the signal of Q2 is driving pulse PWM
uN, the source electrode of Q2 meets+10V; Described switching tube Q3 is PMOS, and the signal of Q3 is driving pulse PWM
uN, the source electrode of Q3 meets+15V; The drain electrode of Q2, Q3 is respectively by driving resistance R
uDrvbe connected to the grid of described driving switch.
5. IGBT drive circuit according to claim 1, is characterized in that: the drive circuit of described discharge switch by switching tube Q4, Q5, resistance R
dDrvform; Described switching tube Q4 is NMOS tube, and the signal of Q4 is driving pulse PWM
dN, the source electrode of Q4 meets-9V; Described switching tube Q5 is PMOS, and the signal of Q5 is driving pulse PWM
dN, the source electrode of Q5 meets-3V; The drain electrode of Q4, Q5 is respectively by driving resistance R
dDrvbe connected to the grid of described discharge switch.
6. many adaptation IGBT driving methods of low ripple noise, described method, based on the IGBT drive circuit as described in as arbitrary in claim 1-5, is characterized in that: described main control chip is converted to PWM through isolating chip
u1, PWM
u2... PWM
uN, control described multichannel driving switch S respectively
u1, S
u2... S
uN, make to drive resistance to access the grid of IGBT accordingly, realize IGBT open-minded by required driving resistance; Described main control chip is converted to PWM through isolating chip
d1, PWM
d2... PWM
dN, control described multichannel discharge switch S respectively
d1, S
d2... S
dN, make corresponding discharge resistance access the grid of IGBT, realize IGBT and turn off by required discharge resistance.
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Cited By (6)
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CN105119590A (en) * | 2015-09-18 | 2015-12-02 | 江苏中科君芯科技有限公司 | IGBT high efficient drive circuit |
CN109618440A (en) * | 2019-01-30 | 2019-04-12 | 九阳股份有限公司 | A kind of electromagnetic heating control circuit and control method |
CN109861504A (en) * | 2019-03-29 | 2019-06-07 | 广东美的制冷设备有限公司 | Air conditioner, intelligent power module and its control method |
CN110868062A (en) * | 2019-10-18 | 2020-03-06 | 珠海格力电器股份有限公司 | Novel half-bridge driving circuit and control method thereof |
CN113364251A (en) * | 2020-03-02 | 2021-09-07 | 广东美的白色家电技术创新中心有限公司 | Drive circuit, power module and electrical equipment |
WO2024041099A1 (en) * | 2022-08-25 | 2024-02-29 | 新誉集团有限公司 | Driving voltage control method, apparatus and device, and medium |
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CN105119590A (en) * | 2015-09-18 | 2015-12-02 | 江苏中科君芯科技有限公司 | IGBT high efficient drive circuit |
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Application publication date: 20150909 |