CN203522511U

CN203522511U - IGBT driving circuit of converter for electric locomotive

Info

Publication number: CN203522511U
Application number: CN201320657777.6U
Authority: CN
Inventors: 贺觅知; 徐玉峰; 王传芳
Original assignee: Beijing CED Railway Electric Tech Co Ltd
Current assignee: Beijing CRRC CED Railway Electric Tech Co Ltd
Priority date: 2013-10-23
Filing date: 2013-10-23
Publication date: 2014-04-02
Anticipated expiration: 2023-10-23
Also published as: CN103595225A; CN103595225B

Abstract

The utility model discloses an IGBT driving circuit of a converter for en electric locomotive. According to the IGBT driving circuit, the complete isolation of a high voltage side and a low voltage side can be realized through power supply voltage isolation, control signal isolation and state feedback signal isolation, an IGBT over-voltage and over-current protection circuit, a positive voltage protection circuit, a negative voltage protection circuit and a gate protection circuit are employed to implement further line protection, thus the safe and reliable operation of an IGBT converter can be ensured, and the circuit can be adapted to the complex environment of the electric locomotive. At the same time, according to the IGBT driving circuit, a voltage stabilizing diode, a bidirectional transient voltage suppression diode and four avalanche diodes can be flexibly selected, thus the circuit is flexibly adapted to the need of the line protection ability by different application scenes of the electric locomotive, a second adapter plate resistor RA2, a fourth adapter plate resistor RA4 and a first adapter plate capacitor CA1 can be flexibly selected, and thus the circuit is flexibly adapted to the need of the IGBT driving ability by different application scenes of the electric locomotive.

Description

A kind of IGBT drive circuit of use for electric locomotive current transformer

Technical field

The utility model relates to electric locomotive field, relates in particular to a kind of IGBT drive circuit of use for electric locomotive current transformer.

Background technology

At present, the heavily loaded AC transmission electric power locomotive of the models such as the HXD1 that China produces, HXD2, HXD1B, HXD2B is all to adopt based on IGBT(Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) current transformer (being called IGBT current transformer in present specification).IGBT drive circuit is the key technology that coordinates IGBT application, its performance has directly determined the overall performance of IGBT current transformer, therefore in the electric locomotive of application IGBT current transformer, the performance of IGBT drive circuit is directly connected to the safety and reliability of whole electric locomotive.

At voltage, be in the electric locomotive that 3300V is even higher, due to overtension, therefore need to build IGBT current transformer with high-power IGBT; In order to guarantee that this IGBT current transformer can move safely and reliably, the IGBT drive circuit that coordinates high-power IGBT to use not only needs to have good driving force, and need in the complicated adverse circumstances of electric locomotive, keep extremely strong safety and reliability.

In the prior art, widely used IGBT drive circuit is the stand-alone integrated driving chip that can obtain by commercial means; This integrated drive chips not only driving force is limited, and be difficult to realize the parameter in circuit is carried out to flexible, therefore this stand-alone integrated driving chip cannot meet electric locomotive and the driving force of IGBT drive circuit and route protection ability carried out the demand of flexible under different application scene; On the other hand, because the electromagnetic environment in electric locomotive is very severe, and stand-alone integrated driving chip is easy to be subject to electromagnetic interference and breaks down, therefore stand-alone integrated driving chip of the prior art cannot guarantee under the complex environment of electric locomotive that IGBT current transformer can safe and reliable operation.

Summary of the invention

Main purpose of the present utility model is to provide a kind of IGBT drive circuit of use for electric locomotive current transformer; not only can adapt to well complicated severe running environment in electric locomotive; and can ensure that IGBT current transformer moves safely and reliably; simultaneously can also be in different application scene flexible driving force and the route protection ability of electric locomotive, thereby effectively guaranteed the safety and reliability of electric locomotive.

The purpose of this utility model is achieved through the following technical solutions:

A kind of IGBT drive circuit of use for electric locomotive current transformer, be connected between electric locomotive main control unit and the insulated gate bipolar transistor IGBT of current transformer, comprise: power circuit, control signal buffer circuit, state feedback buffer circuit, protective circuit, master control logic circuit, drive amplification circuit and gate pole protective circuit;

Power circuit comprises the first pulse transformer T1 and power rectifier circuit, the input of the first pulse transformer T1 is electrically connected to electric locomotive main control unit, and receives the 24V square-wave pulse that electric locomotive main control unit sends, the output of the first pulse transformer T1 is electrically connected to power rectifier circuit, and the supply voltage that uses of the first low-pressure side power output end VY1 and the second low-pressure side power output end VY2 by the power rectifier circuit low-pressure side of exporting this IGBT drive circuit, simultaneously by the first high-pressure side power output end V2P+ of power rectifier circuit, the supply voltage that the high-pressure side that the second high-pressure side power output end V2P-and third high press side power output end VC2 to export this IGBT drive circuit is used, thereby it is isolated between the high-pressure side of this IGBT drive circuit and low-pressure side to have realized Power supply, power rectifier circuit is electrically connected to control signal buffer circuit, state feedback buffer circuit, protective circuit and master control logic circuit respectively,

Control signal buffer circuit comprises control signal buffer circuit low-pressure side and control signal buffer circuit high-pressure side; The input of control signal buffer circuit low-pressure side is electrically connected to electric locomotive main control unit, and receives the control signal that electric locomotive main control unit sends; The output of control signal buffer circuit low-pressure side is electrically connected to the on high-tension side input of control signal buffer circuit by optical fiber, and the control signal that electric locomotive main control unit sends is transferred to control signal buffer circuit high-pressure side, thereby it is isolated between the high-pressure side of this IGBT drive circuit and low-pressure side to have realized control signal; The on high-tension side output of control signal buffer circuit is electrically connected to master control logic circuit, and the control signal that electric locomotive main control unit is sent is transferred to master control logic circuit;

State feedback buffer circuit comprises state feedback buffer circuit low-pressure side and state feedback buffer circuit high-pressure side; The on high-tension side input of state feedback buffer circuit is electrically connected to master control logic circuit, and receives the state feedback signal that master control logic circuit sends; The on high-tension side output of state feedback buffer circuit is electrically connected to the input of state feedback buffer circuit low-pressure side by optical fiber, and the state feedback signal that master control logic circuit sends is transferred to state feedback buffer circuit low-pressure side, thereby it is isolated between the high-pressure side of this IGBT drive circuit and low-pressure side to have realized state feedback signal; State feedback buffer circuit low-pressure side is electrically connected to electric locomotive main control unit, and the state feedback signal that master control logic circuit is sent is transferred to electric locomotive main control unit;

Protective circuit comprises IGBT over-voltage over-current protection circuit, positive voltage protective circuit and negative voltage protective circuit; IGBT over-voltage over-current protection circuit is electrically connected to collector electrode C and the master control logic circuit of IGBT respectively, and when overvoltage or short circuit appear in the collector electrode C of IGBT, to master control logic circuit, sends IGBT over-voltage and over-current fault-signal; Positive voltage protective circuit is electrically connected to the first high-pressure side power output end V2P+ and master control logic circuit respectively, and when the output voltage of the first high-pressure side power output end V2P+ breaks down, to master control logic circuit, sends positive voltage fault-signal; Negative voltage protective circuit is electrically connected to the second high-pressure side power output end V2P-and master control logic circuit respectively, and when the output voltage of the second high-pressure side power output end V2P-breaks down, to master control logic circuit, sends negative voltage fault-signal;

Master control logic circuit is electrically connected to drive amplification circuit, and drive amplification circuit is electrically connected to the gate pole G of IGBT by gate pole protective circuit; The control signal of master control logic circuit output is successively by entering into the gate pole G of IGBT after drive amplification circuit and gate pole protective circuit; The emitter E ground connection of IGBT.

Preferably, described IGBT over-voltage over-current protection circuit comprises: the three or four avalanche diode V34, the three or two avalanche diode V32, the two or six resistance R the 26, the 31 voltage stabilizing didoe V31, the two or seven resistance R the 27, the 30 triode V30, the two or four resistance R the 24, the 25 resistance R the 25, the 33 diode V33, the two or nine resistance R 29, the 3rd zero resistance R30 and the one or seven capacitor C 17;

The collector electrode C of IGBT is connected with the cathodic electricity of the three or four avalanche diode V34, the anode of the three or four avalanche diode V34 is connected with the cathodic electricity of the three or two avalanche diode V32, the anode of the three or two avalanche diode V32 is connected with the cathodic electricity of the 31 voltage stabilizing didoe V31 by the two or six resistance R 26, the anode of the 31 voltage stabilizing didoe V31 is electrically connected to the base stage of the 30 triode V30 by the two or seven resistance R 27, the collector electrode of the 30 triode V30 is electrically connected to the IGBT overvoltage short-circuit protection input of master control logic circuit, the grounded emitter of the 30 triode V30,

One end of the two or four resistance R 24 is electrically connected to the collector electrode of the 30 triode V30, and its other end is electrically connected to the first high-pressure side power output end V2P+;

One end of the two or five resistance R 25 is connected with the cathodic electricity of the 31 voltage stabilizing didoe V31, and its other end is electrically connected to the first high-pressure side power output end V2P+;

The plus earth of the three or three diode V33, the negative electrode of the three or three diode V33 is connected with the cathodic electricity of the 31 voltage stabilizing didoe V31;

One end ground connection of the two or nine resistance R 29, its other end is electrically connected to the anode of the 31 voltage stabilizing didoe V31;

The 3rd zero resistance R30 and the one or seven capacitor C 17 are in parallel, thereby form two sys nodes, and one of them sys node is electrically connected to the emitter of the 30 triode V30, and another sys node is electrically connected to the base stage of the 30 triode V30.

Preferably, described positive voltage protective circuit comprises: the three or eight triode V38, three nine-day periods after the winter solstice voltage stabilizing didoe V39, the three or six resistance R the 36, the 33 resistance R 33 and pseudo-ginseng resistance R 37;

The collector electrode of the three or eight triode V38 is electrically connected to the positive voltage protection input of master control logic circuit, the emitter of the three or eight triode V38 is electrically connected to the first high-pressure side power output end V2P+, the base stage of the three or eight triode V38 is connected with the cathodic electricity of three nine-day periods after the winter solstice voltage stabilizing didoe V39, and the anode of three nine-day periods after the winter solstice voltage stabilizing didoe V39 is by the three or six resistance R 36 ground connection;

One end ground connection of the three or three resistance R 33, its other end is electrically connected to the collector electrode of the three or eight triode V38;

One end of pseudo-ginseng resistance R 37 is electrically connected to the emitter of the three or eight triode V38, and the other end is electrically connected to the base stage of the three or eight triode V38.

Preferably, described negative voltage protective circuit comprises: the three or five triode V35, the three or six voltage stabilizing didoe V36, the three or four resistance R the 34, the 32 resistance R the 32, the 31 resistance R 31, pseudo-ginseng diode V37 and the three or five resistance R 35;

The emitter of the three or five triode V35 is electrically connected to the second high-pressure side power output end V2P-, the base stage of the three or five triode V35 is electrically connected to the anode of the three or six voltage stabilizing didoe V36, the negative electrode of the three or six voltage stabilizing didoe V36 is by the three or four resistance R 34 ground connection, and the collector electrode of the three or five triode V35 is electrically connected to the negative voltage protection input of master control logic circuit by the three or two resistance R 32;

One end of the 31 resistance R 31 is electrically connected to the first high-pressure side power output end V2P+, and its other end is electrically connected to the collector electrode of the three or five triode V35 by the three or two resistance R 32;

The plus earth of pseudo-ginseng diode V37, the negative electrode of pseudo-ginseng diode V37 is electrically connected to the collector electrode of the three or five triode V35 by the three or two resistance R 32;

One end of the three or five resistance R 35 is electrically connected to the base stage of the three or five triode V35, and its other end is electrically connected to the emitter of the three or five triode V35.

Preferably, described drive amplification circuit comprises: the 3rd metal-oxide-semiconductor drives chip U3, the one or eight capacitor C the 18, the 40 diode V40, the three or eight resistance R the 38, the 41 resistance R the 41, the 41 PMOS pipe V41, the 4th metal-oxide-semiconductor to drive chip U4, the one or nine capacitor C 19, the 4th zero resistance R40, the four or two voltage stabilizing didoe V42, the four or three diode V43, the four or two resistance R the 42, the 43 resistance R the 43, the 44 NMOS pipe V44, the second adaptation board resistance R A2, the 4th adaptation board resistance R A4, the first adaptation board resistance R A1 and the first adaptation board capacitor C A1;

The 3rd metal-oxide-semiconductor drives first signal input pin and the equal ground connection of ground connection input pin of chip U3; The 3rd metal-oxide-semiconductor drives the supply voltage input pin of chip U3 to be electrically connected to one end of the first high-pressure side power output end V2P+ and the one or eight capacitor C 18, the other end ground connection of the one or eight capacitor C 18;

The 3rd metal-oxide-semiconductor drives the secondary signal input pin of chip U3 to be electrically connected to the control signal output of master control logic circuit, the 3rd metal-oxide-semiconductor drives the secondary signal output pin of chip U3 to be electrically connected to the anode of the 40 diode V40, the negative electrode of the 40 diode V40 is electrically connected to the grid of the 41 PMOS pipe V41 by the three or eight resistance R 38, the source electrode of the 41 PMOS pipe V41 is electrically connected to the first high-pressure side power output end V2P+, and the drain electrode of the 41 PMOS pipe V41 is electrically connected to one end of the second adaptation board resistance R A2;

One end of the 41 resistance R 41 is electrically connected to the anode of the 40 diode V40, and its other end is electrically connected to the grid of the 41 PMOS pipe V41;

The 4th metal-oxide-semiconductor drives the supply voltage input pin ground connection of chip U4; The 4th metal-oxide-semiconductor drives after the first signal input pin and the parallel connection of ground connection input pin of chip U4, is electrically connected to the other end ground connection of the one or nine capacitor C 19 with one end of the second high-pressure side power output end V2P-and the one or nine capacitor C 19;

The 4th metal-oxide-semiconductor drives the secondary signal input pin of chip U4 to be electrically connected to the 4th one end of zero resistance R40 and the anode of the four or two voltage stabilizing didoe V42 respectively, the other end of the 4th zero resistance R40 is electrically connected to the second high-pressure side power output end V2P-, and the negative electrode of the four or two voltage stabilizing didoe V42 drives the secondary signal output pin of chip U3 to be electrically connected to the 3rd metal-oxide-semiconductor; The 4th metal-oxide-semiconductor drives the secondary signal output pin of chip U4 to be connected with the cathodic electricity of the four or three diode V43, the anode of the four or three diode V43 is electrically connected to the grid of the four or four NMOS pipe V44 by the four or two resistance R 42, the source electrode of the four or four NMOS pipe V44 is electrically connected to the second high-pressure side power output end V2P-, and the drain electrode of the four or four NMOS pipe V44 is electrically connected to one end of the 4th adaptation board resistance R A4;

One end of the four or three resistance R 43 is connected with the cathodic electricity of the four or three diode V43, and its other end is electrically connected to the grid of the four or four NMOS pipe V44;

The other end of the second adaptation board resistance R A2 is electrically connected to the other end of the 4th adaptation board resistance R A4, and after one end of the one end with the first adaptation board resistance R A1 and the first adaptation board capacitor C A1 is electrically connected to, as the IGBT gate-drive line output of drive amplification circuit;

The other end of the other end of the first adaptation board resistance R A1 and the first adaptation board capacitor C A1 is electrically connected to, and after ground connection, as the IGBT emitter drive wire output of drive amplification circuit.

Preferably, described gate pole protective circuit comprises bilateral transient voltage suppression diode VA1; This bilateral transient voltage suppression diode VA1 is connected in parallel between the IGBT gate-drive line and IGBT emitter drive wire of drive amplification circuit output;

The IGBT gate-drive line of drive amplification circuit output, after the one end with bilateral transient voltage suppression diode VA1 is electrically connected to, is electrically connected to the gate pole G of IGBT;

The IGBT emitter drive wire of drive amplification circuit output, after the other end with bilateral transient voltage suppression diode VA1 is electrically connected to, is electrically connected to the emitter E of IGBT.

Preferably, the second adaptation board resistance R A2 of described gate pole protective circuit and drive amplification circuit, the 4th adaptation board resistance R A4, the first adaptation board resistance R A1 and the first adaptation board capacitor C A1 are all arranged at and drive on adaptation board;

Described drive amplification circuit comprises the driving Card Adapter Port consisting of the first binding post Xl-1, the second binding post Xl-2 and the 3rd binding post Xl-3;

The first binding post Xl-1 is electrically connected to the drain electrode of the 41 PMOS pipe V41; The second binding post Xl-2 is electrically connected to the drain electrode of the four or four NMOS pipe V44; The 3rd binding post Xl-3 ground connection;

Driving on adaptation board, the interface line of corresponding the first binding post Xl-1 is electrically connected to one end of the second adaptation board resistance R A2, the interface line of corresponding the second binding post Xl-2 is electrically connected to one end of the 4th adaptation board resistance R A4, and ground connection one end of the corresponding interface line of the 3rd binding post Xl-3 and ground connection one end of the first adaptation board resistance R A1 and the first adaptation board capacitor C A1 is electrically connected to.

The technical scheme being provided by above-mentioned the utility model can be found out, the IGBT drive circuit of the use for electric locomotive current transformer that the utility model embodiment provides is isolated by supply voltage, control signal isolation and the isolation of state feedback signal have realized the high-pressure side of this IGBT drive circuit and the isolation completely of low-pressure side, and be provided with IGBT over-voltage over-current protection circuit, positive voltage protective circuit, negative voltage protective circuit and gate pole protective circuit, thereby make this IGBT drive circuit can adapt to well complicated severe running environment in electric locomotive, and can ensure that IGBT current transformer moves safely and reliably.Simultaneously, this IGBT drive circuit can carry out flexible type selecting to three nine-day periods after the winter solstice voltage stabilizing didoe V39, the three or six voltage stabilizing didoe V36, bilateral transient voltage suppression diode VA1, the three or four avalanche diode V34, the three or two avalanche diode V32 and the 31 voltage stabilizing didoe V31, thereby makes different application scene that this IGBT drive circuit can the adapt to electric locomotive demand to route protection ability; This IGBT drive circuit can also carry out flexible type selecting to the second adaptation board resistance R A2, the 4th adaptation board resistance R A4 and the first adaptation board capacitor C A1, thereby makes different application scene that this IGBT drive circuit can the adapt to electric locomotive demand to IGBT driving force.

Accompanying drawing explanation

In order to be illustrated more clearly in the technical scheme of the utility model embodiment, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain other accompanying drawings according to these accompanying drawings.

The structural representation one of the IGBT drive circuit that Fig. 1 provides for the utility model embodiment;

The structural representation two of the IGBT drive circuit that Fig. 2 provides for the utility model embodiment;

The structural representation three of the IGBT drive circuit that Fig. 3 provides for the utility model embodiment;

The structural representation four of the IGBT drive circuit that Fig. 4 provides for the utility model embodiment;

The structural representation five of the IGBT drive circuit that Fig. 5 provides for the utility model embodiment;

The structural representation six of the IGBT drive circuit that Fig. 6 provides for the utility model embodiment;

The structural representation seven of the IGBT drive circuit that Fig. 7 provides for the utility model embodiment;

The structural representation eight of the IGBT drive circuit that Fig. 8 provides for the utility model embodiment.

Embodiment

Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Based on embodiment of the present utility model, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to protection range of the present utility model.

First it should be noted that, it is the electric locomotive that 3300V is even higher that the IGBT drive circuit of use for electric locomotive current transformer provided by the utility model is mainly applicable to voltage.Start this IGBT drive circuit to be described in detail below.

As shown in Figures 1 to 8, a kind of IGBT drive circuit of use for electric locomotive current transformer, be connected between electric locomotive main control unit and the IGBT of current transformer, its concrete structure can comprise: power circuit, control signal buffer circuit, state feedback buffer circuit, protective circuit, master control logic circuit, drive amplification circuit and gate pole protective circuit;

The control signal of electric locomotive main control unit output after control signal buffer circuit, master control logic circuit, drive amplification circuit and gate pole protective circuit, enters into the gate pole G of IGBT successively; The emitter E ground connection of IGBT; The collector electrode C of IGBT is electrically connected to master control logic circuit by protective circuit; The state feedback signal of master control logic circuit feeds back to electric locomotive main control unit by state feedback buffer circuit; Power circuit power rectifier circuit is electrically connected to control signal buffer circuit, state feedback buffer circuit, protective circuit and master control logic circuit respectively.

Particularly, the specific embodiments of each building block of this IGBT drive circuit can comprise:

(1) power circuit: as shown in Figure 2, this power circuit can comprise the first pulse transformer T1 and power rectifier circuit, the input of the first pulse transformer T1 is electrically connected to electric locomotive main control unit, and receives the 24V square-wave pulse (frequency of this square-wave pulse is generally 35kHz) that electric locomotive main control unit sends, the output of the first pulse transformer T1 is electrically connected to power rectifier circuit, and the supply voltage that uses of the first low-pressure side power output end VY1 and the second low-pressure side power output end VY2 by the power rectifier circuit low-pressure side of exporting this IGBT drive circuit, simultaneously by the first high-pressure side power output end V2P+ of power rectifier circuit, the supply voltage that the high-pressure side that the second high-pressure side power output end V2P-and third high press side power output end VC2 to export this IGBT drive circuit is used, thereby it is isolated between the high-pressure side of this IGBT drive circuit and low-pressure side to have realized Power supply, power rectifier circuit is electrically connected to control signal buffer circuit, state feedback buffer circuit, protective circuit and master control logic circuit respectively.

Wherein, the first pulse transformer T1 can adopt three winding pulse transformers, and the 24V square-wave pulse that electric locomotive main control unit can be sent converts three-way power output to; Each road power supply is exported two power supply output pins on corresponding the first pulse transformer T1, for example: in Fig. 2, the corresponding first via power supply output of the 8th, 9 pins of the first pulse transformer T1, corresponding the second road power supply output of the 4th, 6 pins of the first pulse transformer T1, the corresponding Third Road power supply output of the 3rd, 5 pins of the first pulse transformer T1.

Power rectifier circuit can comprise low-pressure side power rectifier circuit, the first high-pressure side power rectifier circuit and the second high-pressure side power rectifier circuit; Low-pressure side power rectifier circuit can be electrically connected to the first via power supply output of the first pulse transformer T1, and the supply voltage of the low-pressure side use that the first low-pressure side power output end VY1 and the second low-pressure side power output end VY2 export this IGBT drive circuit is provided; The first high-pressure side power rectifier circuit can be electrically connected to the second road power supply output of the first pulse transformer T1, and provides the first high-pressure side power output end V2P+ and third high to press side power output end VC2 to export the supply voltage of the high-pressure side use of this IGBT drive circuit; The second high-pressure side power rectifier circuit can be electrically connected to the Third Road power supply output of the first pulse transformer T1, and provides third high to press side power output end VC2 to export the supply voltage of the high-pressure side use of this IGBT drive circuit; These power output ends can be exported following supply voltage:

The first low-pressure side power output end VY1 exports that the low-pressure side of this IGBT drive circuit used+15V supply voltage;

The second low-pressure side power output end VY2 exports that the low-pressure side of this IGBT drive circuit used+5V supply voltage;

The first high-pressure side power output end V2P+ exports that the high-pressure side of this IGBT drive circuit used+15V supply voltage;

The second high-pressure side power output end V2P-exports that the high-pressure side of this IGBT drive circuit used-15V supply voltage;

The 5V supply voltage that the high-pressure side that third high presses side power output end VC2 to export this IGBT drive circuit is used.

In actual applications, third high presses side power output end VC2 to be mainly used in providing power supply for the semiconductor device in this IGBT drive circuit and gate device, because this belongs to the common practise of this area, so omit relevant portion in the accompanying drawing of present specification, in explanatory note, also repeat no more.Low-pressure side power rectifier circuit, the first high-pressure side power rectifier circuit and the second high-pressure side power rectifier circuit can adopt rectification circuit well known in the art of the prior art, also can adopt circuit as shown in Figure 2, but preferably adopt circuit as shown in Figure 2, to ensure that power rectifier circuit has good detectability, antijamming capability and safe and reliable serviceability.

As can be seen here, the 24V square-wave pulse that electric locomotive main control unit sends has been realized Power supply effective isolation between the high-pressure side of this IGBT drive circuit and low-pressure side by the first pulse transformer T1 and different rectification circuits, so high-pressure side of IGBT(or this IGBT drive circuit) the large voltage producing, large electric current can not interfere with the low-pressure side of this IGBT drive circuit and the electric locomotive main control unit being connected with this IGBT drive circuit by supply line, thereby effectively avoided electric locomotive main control unit to cause damage, effectively ensured that electric locomotive main control part can not be subject to the large electric current of IGBT, the interference of large voltage and safe and reliable operation.

(2) control signal buffer circuit: as shown in Figure 3 and Figure 5, this control signal buffer circuit can comprise control signal buffer circuit low-pressure side and control signal buffer circuit high-pressure side; The input of control signal buffer circuit low-pressure side is electrically connected to electric locomotive main control unit, and receives the control signal that electric locomotive main control unit sends; The output of control signal buffer circuit low-pressure side is electrically connected to the on high-tension side input of control signal buffer circuit by optical fiber, and the control signal that electric locomotive main control unit sends is transferred to control signal buffer circuit high-pressure side, thereby it is isolated between the high-pressure side of this IGBT drive circuit and low-pressure side to have realized control signal; The on high-tension side output of control signal buffer circuit is electrically connected to master control logic circuit, and the control signal that electric locomotive main control unit is sent is transferred to master control logic circuit.

Wherein, control signal buffer circuit low-pressure side can comprise the first fiber optic emitter V4, control signal buffer circuit high-pressure side can comprise the first fiber optic receiver V6, the first fiber optic emitter V4 can send to the first fiber optic receiver V6 by control signal by optical fiber, this not only can ensure control signal normal transmission, and make the high-pressure side of IGBT(or this IGBT drive circuit) the large voltage that produces, large electric current can not interfere with the low-pressure side of this IGBT drive circuit and the electric locomotive main control unit being connected with this IGBT drive circuit by control signal transmission line, thereby effectively avoided electric locomotive main control unit to cause damage, effectively ensured that electric locomotive main control part can not be subject to the large electric current of IGBT, the interference of large voltage and safe and reliable operation.

In actual applications, control signal buffer circuit low-pressure side and control signal buffer circuit high-pressure side can adopt optical fiber transmitter/receiver circuit well known in the art of the prior art, also can adopt circuit as shown in Figure 3 and Figure 5, but preferably adopt circuit as shown in Figure 3 and Figure 5, to ensure that this control signal buffer circuit has good signal transmission capabilities, antijamming capability and safe and reliable serviceability.

(3) state feedback buffer circuit: as shown in Figure 4 and Figure 5, this state feedback buffer circuit can comprise state feedback buffer circuit low-pressure side and state feedback buffer circuit high-pressure side; The on high-tension side input of state feedback buffer circuit is electrically connected to master control logic circuit, and receives the state feedback signal that master control logic circuit sends; The on high-tension side output of state feedback buffer circuit is electrically connected to the input of state feedback buffer circuit low-pressure side by optical fiber, and the state feedback signal that master control logic circuit sends is transferred to state feedback buffer circuit low-pressure side, thereby it is isolated between the high-pressure side of this IGBT drive circuit and low-pressure side to have realized state feedback signal; State feedback buffer circuit low-pressure side is electrically connected to electric locomotive main control unit, and the state feedback signal that master control logic circuit is sent is transferred to electric locomotive main control unit.

Wherein, state feedback buffer circuit high-pressure side can comprise the second fiber optic emitter V15, state feedback buffer circuit low-pressure side can comprise the second fiber optic receiver V2, the second fiber optic emitter V15 sends to the second fiber optic receiver V2 by optical fiber by state feedback signal, this not only can conditions of support feedback signal normal transmission, and can make the high-pressure side of IGBT(or this IGBT drive circuit) the large voltage that produces, large electric current can not interfere with the low-pressure side of this IGBT drive circuit and the electric locomotive main control unit being connected with this IGBT drive circuit by state feedback signal transmission line, thereby effectively avoided electric locomotive main control unit to cause damage, effectively ensured that electric locomotive main control part can not be subject to the large electric current of IGBT, the interference of large voltage and safe and reliable operation.

In actual applications, state feedback buffer circuit low-pressure side and state feedback buffer circuit high-pressure side can adopt optical fiber transmitter/receiver circuit well known in the art of the prior art, also can adopt circuit as shown in Figures 4 and 5, but preferably adopt circuit as shown in Figures 4 and 5, to ensure that this state feedback buffer circuit has good signal transmission capabilities, antijamming capability and safe and reliable serviceability.

(4) master control logic circuit: this master control logic circuit can be electrically connected to drive amplification circuit, drive amplification circuit is electrically connected to the gate pole G of IGBT by gate pole protective circuit; The control signal of master control logic circuit output is successively by entering into the gate pole G of IGBT after drive amplification circuit and gate pole protective circuit; The emitter E ground connection of IGBT.

Wherein, master control logic circuit can adopt the master control logic circuit that in prior art, the IGBT drive circuit in electric locomotive uses, for example: can adopt and take the NAND gate MC14093 of ON (ON) and the logic gates that MC14023 builds as core; Because this part circuit is prior art content, and not inventive point of the present utility model, so do not repeat in present specification.

(5) protective circuit: as shown in Figure 6, this protective circuit can comprise: IGBT over-voltage over-current protection circuit, positive voltage protective circuit and negative voltage protective circuit; IGBT over-voltage over-current protection circuit is electrically connected to collector electrode C and the master control logic circuit of IGBT respectively, and when overvoltage or short circuit appear in the collector electrode C of IGBT, to master control logic circuit, sends IGBT over-voltage and over-current fault-signal; Positive voltage protective circuit is electrically connected to the first high-pressure side power output end V2P+ and master control logic circuit respectively, and when the output voltage of the first high-pressure side power output end V2P+ breaks down, to master control logic circuit, sends positive voltage fault-signal; Negative voltage protective circuit is electrically connected to the second high-pressure side power output end V2P-and master control logic circuit respectively, and when the output voltage of the second high-pressure side power output end V2P-breaks down, to master control logic circuit, sends negative voltage fault-signal.

Wherein, the specific embodiments of these three protective circuits can comprise:

1. positive voltage protective circuit: this positive voltage protective circuit can comprise: the three or eight triode V38, three nine-day periods after the winter solstice voltage stabilizing didoe V39, the three or six resistance R the 36, the 33 resistance R 33 and pseudo-ginseng resistance R 37; The collector electrode of the three or eight triode V38 is electrically connected to the positive voltage protection input of master control logic circuit, the emitter of the three or eight triode V38 is electrically connected to the first high-pressure side power output end V2P+, the base stage of the three or eight triode V38 is connected with the cathodic electricity of three nine-day periods after the winter solstice voltage stabilizing didoe V39, and the anode of three nine-day periods after the winter solstice voltage stabilizing didoe V39 is by the three or six resistance R 36 ground connection; One end ground connection of the three or three resistance R 33, its other end is electrically connected to the collector electrode of the three or eight triode V38; One end of pseudo-ginseng resistance R 37 is electrically connected to the emitter of the three or eight triode V38, and the other end is electrically connected to the base stage of the three or eight triode V38.

Particularly, the turn-on and turn-off of IGBT have clear and definite requirement for the voltage of the gate pole G of IGBT, if the undesirable IGBT that may cause of voltage damages; This positive voltage protective circuit mainly be take the three or eight triode V38 and three nine-day periods after the winter solstice voltage stabilizing didoe V39 and is built as core; Under normal circumstances, the supply voltage of the first high-pressure side power output end V2P+ output can make the voltage difference at three nine-day periods after the winter solstice voltage stabilizing didoe V39 two ends lower than the reverse-conducting threshold values of three nine-day periods after the winter solstice voltage stabilizing didoe V39, three nine-day periods after the winter solstice, voltage stabilizing didoe V39 was in forward conduction state, the three or eight triode V38 is in cut-off state, and what this positive voltage protective circuit was exported to master control logic circuit is low level; The voltage difference that makes three nine-day periods after the winter solstice voltage stabilizing didoe V39 two ends when the supply voltage of the first high-pressure side power output end V2P+ output is during higher than the reverse-conducting threshold values of three nine-day periods after the winter solstice voltage stabilizing didoe V39, three nine-day periods after the winter solstice voltage stabilizing didoe V39 reverse-conducting, the three or eight triode V38 conducting, this positive voltage protective circuit is exported to the high level that becomes of master control logic circuit; The positive voltage protection input of master control logic circuit is using high level as positive voltage fault-signal; master control logic circuit is processed this positive voltage fault-signal; and feed back to electric locomotive main control unit by state feedback buffer circuit; thereby make IGBT and this IGBT drive circuit can not be subject to the too high impact of positive voltage, ensured that IGBT current transformer can not be subject to too high impact of positive voltage and safe and reliable operation.As can be seen here; whether the supply voltage of the first high-pressure side power output end V2P+ output can make positive voltage protective circuit output high level; depend primarily on the threshold values of three nine-day periods after the winter solstice voltage stabilizing didoe V39; therefore by three nine-day periods after the winter solstice voltage stabilizing didoe V39 being replaced with to the voltage stabilizing didoe of different threshold values; can make this positive voltage protective circuit there is the positive voltage protective capability of different stage, thereby the different application scene that can make this IGBT drive circuit adapt to electric locomotive align the demand of voltage protection.

2. negative voltage protective circuit: this negative voltage protective circuit can comprise: the three or five triode V35, the three or six voltage stabilizing didoe V36, the three or four resistance R the 34, the 32 resistance R the 32, the 31 resistance R 31, pseudo-ginseng diode V37 and the three or five resistance R 35; The emitter of the three or five triode V35 is electrically connected to the second high-pressure side power output end V2P-, the base stage of the three or five triode V35 is electrically connected to the anode of the three or six voltage stabilizing didoe V36, the negative electrode of the three or six voltage stabilizing didoe V36 is by the three or four resistance R 34 ground connection, and the collector electrode of the three or five triode V35 is electrically connected to the negative voltage protection input of master control logic circuit by the three or two resistance R 32; One end of the 31 resistance R 31 is electrically connected to the first high-pressure side power output end V2P+, and its other end is electrically connected to the collector electrode of the three or five triode V35 by the three or two resistance R 32; The plus earth of pseudo-ginseng diode V37, the negative electrode of pseudo-ginseng diode V37 is electrically connected to the collector electrode of the three or five triode V35 by the three or two resistance R 32; One end of the three or five resistance R 35 is electrically connected to the base stage of the three or five triode V35, and its other end is electrically connected to the emitter of the three or five triode V35.

Particularly, the turn-on and turn-off of IGBT have clear and definite requirement for the voltage of the gate pole G of IGBT, if the undesirable IGBT that may cause of voltage damages; This negative voltage protective circuit mainly be take the three or five triode V35 and the three or six voltage stabilizing didoe V36 and is built as core; Under normal circumstances, the supply voltage of the second high-pressure side power output end V2P-output can make the voltage difference at the three or six voltage stabilizing didoe V36 two ends lower than the reverse-conducting threshold values of the three or six voltage stabilizing didoe V36, the three or five triode V35 is in cut-off state, and what this negative voltage protective circuit was exported to master control logic circuit is high level; The voltage difference that makes the three or six voltage stabilizing didoe V36 two ends when the supply voltage of the second high-pressure side power output end V2P-output is during higher than the reverse-conducting threshold values of the three or six voltage stabilizing didoe V36, the three or six voltage stabilizing didoe V36 reverse-conducting, the three or five triode V35 conducting, this negative voltage protective circuit is exported to the low level that becomes of master control logic circuit; The negative voltage protection input of master control logic circuit is using low level as negative voltage fault-signal; master control logic circuit is processed this negative voltage fault-signal; and feed back to electric locomotive main control unit by state feedback buffer circuit; thereby make IGBT and this IGBT drive circuit can not be subject to the too low impact of negative voltage, ensured that IGBT current transformer can not be subject to too high impact of negative voltage and safe and reliable operation.As can be seen here; whether the supply voltage of the second high-pressure side power output end V2P-output can make negative voltage protective circuit output low level; depend primarily on the threshold values of the three or six voltage stabilizing didoe V36; therefore by the three or six voltage stabilizing didoe V36 being replaced with to the voltage stabilizing didoe of different threshold values; can make this negative voltage protective circuit there is the negative voltage protective capability of different stage, thus the demand that the different application scene that can make this IGBT drive circuit adapt to electric locomotive is protected negative voltage.

3. IGBT over-voltage over-current protection circuit: this IGBT over-voltage over-current protection circuit can comprise: the three or four avalanche diode V34, the three or two avalanche diode V32, the two or six resistance R the 26, the 31 voltage stabilizing didoe V31, the two or seven resistance R the 27, the 30 triode V30, the two or four resistance R the 24, the 25 resistance R the 25, the 33 diode V33, the two or nine resistance R 29, the 3rd zero resistance R30 and the one or seven capacitor C 17, the collector electrode C of IGBT is connected with the cathodic electricity of the three or four avalanche diode V34, the anode of the three or four avalanche diode V34 is connected with the cathodic electricity of the three or two avalanche diode V32, the anode of the three or two avalanche diode V32 is connected with the cathodic electricity of the 31 voltage stabilizing didoe V31 by the two or six resistance R 26, the anode of the 31 voltage stabilizing didoe V31 is electrically connected to the base stage of the 30 triode V30 by the two or seven resistance R 27, the collector electrode of the 30 triode V30 is electrically connected to the IGBT overvoltage short-circuit protection input of master control logic circuit, the grounded emitter of the 30 triode V30, one end of the two or four resistance R 24 is electrically connected to the collector electrode of the 30 triode V30, and its other end is electrically connected to the first high-pressure side power output end V2P+, one end of the two or five resistance R 25 is connected with the cathodic electricity of the 31 voltage stabilizing didoe V31, and its other end is electrically connected to the first high-pressure side power output end V2P+, the plus earth of the three or three diode V33, the negative electrode of the three or three diode V33 is connected with the cathodic electricity of the 31 voltage stabilizing didoe V31, one end ground connection of the two or nine resistance R 29, its other end is electrically connected to the anode of the 31 voltage stabilizing didoe V31, the 3rd zero resistance R30 and the one or seven capacitor C 17 are in parallel, thereby form two sys nodes, and one of them sys node is electrically connected to the emitter of the 30 triode V30, and another sys node is electrically connected to the base stage of the 30 triode V30.

Particularly, this IGBT over-voltage over-current protection circuit mainly be take the three or four avalanche diode V34, the three or two avalanche diode V32, the two or six resistance R the 26, the 31 voltage stabilizing didoe V31 and the 30 triode V30 and is built as core; By the three or four avalanche diode V34 and the three or two avalanche diode V32 are carried out to the overvoltage protection threshold values that type selecting can be adjusted this protective circuit, by the two or six resistance R 26 and the 31 voltage stabilizing didoe V31 are carried out to the short-circuit protection threshold values that type selecting can be adjusted this protective circuit.Under normal circumstances, the 30 triode V30 is in cut-off state, and what this IGBT over-voltage over-current protection circuit was exported to master control logic circuit is high level; When the overtension of the collector electrode C of IGBT punctures the three or four avalanche diode V34 and the three or two avalanche diode V32, or when IGBT occurs " moving back saturated " phenomenon because of short circuit, and make the collector electrode C of IGBT and the change in voltage between emitter E when setting short-circuit protection threshold values, the 30 triode V30 conducting, what this IGBT over-voltage over-current protection circuit was exported to master control logic circuit is low level; The IGBT overvoltage short-circuit protection input of master control logic circuit is using low level as IGBT over-voltage and over-current fault-signal; master control logic circuit blocks the trigger impulse of IGBT according to this IGBT over-voltage and over-current fault-signal; and feed back to electric locomotive main control unit by state feedback buffer circuit; thereby make IGBT enter off state; to ensure that IGBT can not be subject to the impact of IGBT overvoltage or short circuit and damage, and then promoted the safety and reliability of use for electric locomotive IGBT current transformer.As can be seen here; by the three or four avalanche diode V34, the three or two avalanche diode V32, the two or six resistance R 26 and the 31 voltage stabilizing didoe V31 being carried out to type selecting, can make this IGBT over-voltage over-current protection circuit possess overvoltage protection and the short-circuit protection ability of different stage, therefore can make different application scene that this IGBT drive circuit the adapts to electric locomotive demand to IGBT overvoltage protection and short-circuit protection.

(6) drive amplification circuit: as shown in Figure 7 and Figure 8, this drive amplification circuit can comprise: the 3rd metal-oxide-semiconductor drives chip U3, the one or eight capacitor C 18, the 40 diode V40, the three or eight resistance R 38, the 41 resistance R 41, the 41 PMOS pipe V41, the 4th metal-oxide-semiconductor drives chip U4, the one or nine capacitor C 19, the 4th zero resistance R40, the four or two voltage stabilizing didoe V42, the four or three diode V43, the four or two resistance R 42, the four or three resistance R 43, the four or four NMOS pipe V44, the second adaptation board resistance R A2, the 4th adaptation board resistance R A4, the first adaptation board resistance R A1 and the first adaptation board capacitor C A1,

The 3rd metal-oxide-semiconductor drives first signal input pin and the equal ground connection of ground connection input pin of chip U3; The 3rd metal-oxide-semiconductor drives the supply voltage input pin of chip U3 to be electrically connected to one end of the first high-pressure side power output end V2P+ and the one or eight capacitor C 18, the other end ground connection of the one or eight capacitor C 18; The 3rd metal-oxide-semiconductor drives the secondary signal input pin of chip U3 to be electrically connected to the control signal output of master control logic circuit, the 3rd metal-oxide-semiconductor drives the secondary signal output pin of chip U3 to be electrically connected to the anode of the 40 diode V40, the negative electrode of the 40 diode V40 is electrically connected to the grid of the 41 PMOS pipe V41 by the three or eight resistance R 38, the source electrode of the 41 PMOS pipe V41 is electrically connected to the first high-pressure side power output end V2P+, and the drain electrode of the 41 PMOS pipe V41 is electrically connected to one end of the second adaptation board resistance R A2; One end of the 41 resistance R 41 is electrically connected to the anode of the 40 diode V40, and its other end is electrically connected to the grid of the 41 PMOS pipe V41;

The 4th metal-oxide-semiconductor drives the supply voltage input pin ground connection of chip U4; The 4th metal-oxide-semiconductor drives after the first signal input pin and the parallel connection of ground connection input pin of chip U4, is electrically connected to the other end ground connection of the one or nine capacitor C 19 with one end of the second high-pressure side power output end V2P-and the one or nine capacitor C 19; The 4th metal-oxide-semiconductor drives the secondary signal input pin of chip U4 to be electrically connected to the 4th one end of zero resistance R40 and the anode of the four or two voltage stabilizing didoe V42 respectively, the other end of the 4th zero resistance R40 is electrically connected to the second high-pressure side power output end V2P-, and the negative electrode of the four or two voltage stabilizing didoe V42 drives the secondary signal output pin of chip U3 to be electrically connected to the 3rd metal-oxide-semiconductor; The 4th metal-oxide-semiconductor drives the secondary signal output pin of chip U4 to be connected with the cathodic electricity of the four or three diode V43, the anode of the four or three diode V43 is electrically connected to the grid of the four or four NMOS pipe V44 by the four or two resistance R 42, the source electrode of the four or four NMOS pipe V44 is electrically connected to the second high-pressure side power output end V2P-, and the drain electrode of the four or four NMOS pipe V44 is electrically connected to one end of the 4th adaptation board resistance R A4; One end of the four or three resistance R 43 is connected with the cathodic electricity of the four or three diode V43, and its other end is electrically connected to the grid of the four or four NMOS pipe V44;

The other end of the second adaptation board resistance R A2 is electrically connected to the other end of the 4th adaptation board resistance R A4, and after one end of the one end with the first adaptation board resistance R A1 and the first adaptation board capacitor C A1 is electrically connected to, as the IGBT gate-drive line output of drive amplification circuit; The other end of the other end of the first adaptation board resistance R A1 and the first adaptation board capacitor C A1 is electrically connected to, and after ground connection, as the IGBT emitter drive wire output of drive amplification circuit.

Wherein, the control signal of master control logic circuit output drives the conducting voltage of amplifying become+15V after chip U3 and the 41 PMOS pipe V41 by the 3rd metal-oxide-semiconductor, simultaneously by amplifying the shutoff voltage of become-15V after the 4th metal-oxide-semiconductor driving chip U4 and the four or four NMOS pipe V44, the conducting voltage of+15V second adaptation board resistance R the A2 that flows through, the shutoff voltage of-15V the 4th adaptation board resistance R A4 that flows through, by changing the second adaptation board resistance R A2, the di/dt(di/dt that the Parameter Conditions of the 4th adaptation board resistance R A4 and the first adaptation board capacitor C A1 can be adjusted driving pulse that this drive amplification circuit is exported refer to curent change in the unit interval number, be current changing rate) and dv/dt(dv/dt refer to change in voltage in the unit interval number, be voltage change ratio), thereby make the driver capacity requirement of the different application scene that IGBT drive circuit can flexible adaptation electric locomotive, the electric charge that the first adaptation board resistance R A1 can make the gate pole G of IGBT accumulate is discharged, thereby guarantees the operation that IGBT can be safe and reliable.

(7) gate pole protective circuit: as shown in Figure 8, this gate pole protective circuit can comprise bilateral transient voltage suppression diode VA1; This bilateral transient voltage suppression diode VA1 is connected in parallel between the IGBT gate-drive line and IGBT emitter drive wire of drive amplification circuit output; The IGBT gate-drive line of drive amplification circuit output, after the one end with bilateral transient voltage suppression diode VA1 is electrically connected to, is electrically connected to the gate pole G of IGBT; The IGBT emitter drive wire of drive amplification circuit output, after the other end with bilateral transient voltage suppression diode VA1 is electrically connected to, is electrically connected to the emitter E of IGBT.

Wherein, this bilateral transient voltage suppression diode VA1 can effectively prevent that the due to voltage spikes of the gate pole G of IGBT from damaging IGBT, thereby has improved the safety and reliability of IGBT operation; The Parameter Conditions of this bilateral transient voltage suppression diode VA1 is different; protective capability to the gate pole G of IGBT is also different; therefore can to this bilateral transient voltage suppression diode VA1, carry out flexible type selecting according to the practical application scene of this IGBT drive circuit, thereby make different application scene that IGBT drive circuit can the flexible adaptation electric locomotive voltage protection demand to IGBT gate pole G.

(8) drive adaptation board: as shown in Figure 7 and Figure 8, the second adaptation board resistance R A2 of gate pole protective circuit and drive amplification circuit, the 4th adaptation board resistance R A4, the first adaptation board resistance R A1 and the first adaptation board capacitor C A1 are all arranged at and drive on adaptation board; Drive amplification circuit can comprise the driving Card Adapter Port consisting of the first binding post Xl-1, the second binding post Xl-2 and the 3rd binding post Xl-3; The first binding post Xl-1 is electrically connected to the drain electrode of the 41 PMOS pipe V41; The second binding post Xl-2 is electrically connected to the drain electrode of the four or four NMOS pipe V44; The 3rd binding post Xl-3 ground connection; Driving on adaptation board, the interface line of corresponding the first binding post Xl-1 is electrically connected to one end of the second adaptation board resistance R A2, the interface line of corresponding the second binding post Xl-2 is electrically connected to one end of the 4th adaptation board resistance R A4, and ground connection one end of the corresponding interface line of the 3rd binding post Xl-3 and ground connection one end of the first adaptation board resistance R A1 and the first adaptation board capacitor C A1 is electrically connected to.

Wherein, drive one end of adaptation board to be electrically connected to driving Card Adapter Port by twisted-pair feeder, and the other end can directly be connected with IGBT by bolt, electromagnetic interference and the temperature rise that can effectively prevent like this IGBT exert an influence to other parts of this IGBT drive circuit, thereby can guarantee the operation that this IGBT drive circuit can be safe and reliable.

It should be noted that, the diode adopting in the IGBT drive circuit of use for electric locomotive current transformer provided by the utility model, triode, NMOS pipe, PMOS pipe, resistance, electric capacity, avalanche diode, voltage stabilizing didoe, transformer, pressurizer, fiber optic emitter, the components and parts such as fiber optic receiver all adopt non-integrated independent entry device, because the anti-electromagnetic interference capability of independent entry device will be far longer than integrated chip, therefore the anti-electromagnetic interference capability of technical scheme described in the utility model is better than prior art far away, this makes this IGBT drive circuit can adapt to well complicated severe running environment in electric locomotive, thereby effectively guaranteed that electric locomotive can safe and reliable operation.

Further, this IGBT drive circuit by supply voltage isolate, control signal isolation and the isolation of state feedback signal realized the high-pressure side of this IGBT drive circuit and the isolation completely of low-pressure side, guaranteed on high-tension side large voltage, electric current can not interfere with the electric locomotive main control unit being connected with the low-pressure side of this IGBT drive circuit greatly; Positive voltage protective circuit and negative voltage protective circuit can make IGBT gate leve drive turn-on and turn-off voltage stabilization and meet the demands, and have ensured that this IGBT drive circuit can safe and reliable operation; IGBT over-voltage over-current protection circuit can find that overvoltage or short circuit phenomenon appear in IGBT in time, and by master control logic circuit, blocks rapidly the trigger impulse of the gate pole G of IGBT, thereby has effectively avoided the damage of IGBT; Gate pole protective circuit can effectively prevent that the due to voltage spikes of the gate pole G of IGBT from damaging IGBT, thereby has further improved the safety and reliability of IGBT operation; Drive the adaptation board can IGBT and most IGBT drive circuit is isolated, thereby can effectively prevent that the electromagnetic interference of IGBT and temperature rise are to most of IGBT drive circuit generation harmful effect, ensured that this IGBT drive circuit can safe and reliable operation; As can be seen here, this IGBT drive circuit not only can adapt to complicated severe running environment in electric locomotive well, and can ensure that IGBT current transformer moves safely and reliably.

In addition, in the IGBT drive circuit providing at the utility model embodiment, by aligning three nine-day periods after the winter solstice voltage stabilizing didoe V39 in voltage protection circuit, the three or six voltage stabilizing didoe V36 in negative voltage protective circuit, bilateral transient voltage suppression diode VA1 in gate pole protective circuit, the three or four avalanche diode V34 in IGBT over-voltage over-current protection circuit, the three or two avalanche diode V32, the two or six resistance R 26 and the 31 voltage stabilizing didoe V31 carry out flexible type selecting, can make this IGBT drive circuit there is different route protection abilities, thereby the demand of the different application scene that can adapt to electric locomotive to route protection ability, by the second adaptation board resistance R A2, the 4th adaptation board resistance R A4 of drive amplification circuit and the first adaptation board capacitor C A1 are carried out to flexible type selecting, can make this IGBT drive circuit there is different IGBT driving forces, thus the demand of the different application scene that can adapt to electric locomotive to IGBT driving force.

As fully visible; the enforcement of the utility model embodiment not only can adapt to complicated severe running environment in electric locomotive well; and can ensure that IGBT current transformer moves safely and reliably; simultaneously can also be in different application scene flexible driving force and the route protection ability of electric locomotive, thereby effectively guaranteed the safety and reliability of electric locomotive.

For making content, object and the beneficial effect of technical scheme that the utility model provides clearer, below by instantiation, be described in detail.

Embodiment mono-

As shown in Figures 1 to 8, a kind of IGBT drive circuit of use for electric locomotive current transformer, is connected between electric locomotive main control unit and the IGBT of current transformer, and its concrete structure can adopt technique scheme.

Wherein, the components and parts that use in technique scheme can adopt following specific embodiments:

(1), in the circuit shown in Fig. 2, the first pulse transformer T1 can adopt the transformer of 3 1:1 windings, isolation voltage AC1000V, and inductance value is about 300uH under 10kHZ, and the resistance value of each winding is less than 100m ohm, and operating frequency is 35kHz.

(2), in the circuit shown in Fig. 2, the first stabilized voltage power supply sheet A1, the second stabilized voltage power supply sheet A2 and the 3rd stabilized voltage power supply sheet A3 can adopt the LD1086V of meaning method (ST), and by build peripheral circuit obtain required+15V and-15V voltage.The one or four diode V14 and the 21 voltage stabilizing didoe V21 can adopt the IN4733 of fairchild (FAIRCHILD), and obtain required 5V voltage by building peripheral circuit.

(3) in the circuit shown in Fig. 3, Fig. 4 and Fig. 5, the first fiber optic emitter V4 and the second fiber optic emitter V15 can adopt the SFH756V of Avago (AVAGO), the first fiber optic receiver V6 and the second fiber optic receiver V2 can adopt the SFH551/1-1V of Avago (AVAGO), the optical fiber that connects fiber optic emitter and fiber optic receiver can adopt 2.2mmPOF optical fiber, and a MOS drives chip U1 can adopt the semi-conductive MOS of TELCOM to drive chip TC428.

(4), in the circuit shown in Fig. 6, master control logic circuit can adopt NAND gate MC14093 and the MC14023 of ON (ON) to build; The three or four avalanche diode V34 and the three or two avalanche diode V32 can adopt the SKa3-17 of Xi Menkang (SEMIKRON).

(5) in the circuit shown in Fig. 7, it is first order drive amplification that the 3rd metal-oxide-semiconductor drives chip U3 and the 4th metal-oxide-semiconductor to drive chip U4, can adopt the semi-conductive MOS of TELCOM to drive chip TC428; The 41 PMOS pipe V41 and the four or four NMOS pipe V44 are second level drive amplification, and the 41 PMOS pipe V41 can adopt P type power MOS pipe IRF9530, and the four or four NMOS pipe V44 can adopt N-type power MOS pipe IRF530.

(6), in the circuit shown in Fig. 8, bilateral transient voltage suppression diode VA1 can adopt the 1.5KE18CA of DIODES.

Particularly; this IGBT drive circuit adopts the FR4 sheet material of TG170C to carry out circuit board wiring; deposited copper thickness is about 50um; and adopt 4 laminates to carry out PCB design; so that the ground being electrically connected to the low-pressure side of this IGBT drive circuit and the ground that is electrically connected to the high-pressure side of this IGBT drive circuit are isolated, thereby obtain better route protection effect.

Visible; the enforcement of the utility model embodiment not only can adapt to complicated severe running environment in electric locomotive well; and can ensure that IGBT current transformer moves safely and reliably; simultaneously can also be in different application scene flexible driving force and the route protection ability of electric locomotive, thereby effectively guaranteed the safety and reliability of electric locomotive.

The above; it is only preferably embodiment of the utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; the variation that can expect easily or replacement, within all should being encompassed in protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of claims.

Claims

1. the IGBT drive circuit of a use for electric locomotive current transformer, be connected between electric locomotive main control unit and the insulated gate bipolar transistor IGBT of current transformer, it is characterized in that, comprising: power circuit, control signal buffer circuit, state feedback buffer circuit, protective circuit, master control logic circuit, drive amplification circuit and gate pole protective circuit;

Power circuit comprises the first pulse transformer (T1) and power rectifier circuit, the input of the first pulse transformer (T1) is electrically connected to electric locomotive main control unit, and receives the 24V square-wave pulse that electric locomotive main control unit sends, the output of the first pulse transformer (T1) is electrically connected to power rectifier circuit, and the supply voltage of the low-pressure side of exporting this IGBT drive circuit by the first low-pressure side power output end (VY1) and the second low-pressure side power output end (VY2) of power rectifier circuit use, simultaneously by the first high-pressure side power output end (V2P+) of power rectifier circuit, the supply voltage that the high-pressure side that the second high-pressure side power output end (V2P-) and third high press side power output end (VC2) to export this IGBT drive circuit is used, thereby it is isolated between the high-pressure side of this IGBT drive circuit and low-pressure side to have realized Power supply, power rectifier circuit is electrically connected to control signal buffer circuit, state feedback buffer circuit, protective circuit and master control logic circuit respectively,

Protective circuit comprises IGBT over-voltage over-current protection circuit, positive voltage protective circuit and negative voltage protective circuit; IGBT over-voltage over-current protection circuit is electrically connected to collector electrode (C) and the master control logic circuit of IGBT respectively, and when overvoltage or short circuit appear in the collector electrode (C) of IGBT, to master control logic circuit, sends IGBT over-voltage and over-current fault-signal; Positive voltage protective circuit is electrically connected to the first high-pressure side power output end (V2P+) and master control logic circuit respectively, and when the output voltage of the first high-pressure side power output end (V2P+) breaks down, to master control logic circuit, sends positive voltage fault-signal; Negative voltage protective circuit is electrically connected to the second high-pressure side power output end (V2P-) and master control logic circuit respectively, and when the output voltage of the second high-pressure side power output end (V2P-) breaks down, to master control logic circuit, sends negative voltage fault-signal;

Master control logic circuit is electrically connected to drive amplification circuit, and drive amplification circuit is electrically connected to the gate pole (G) of IGBT by gate pole protective circuit; The control signal of master control logic circuit output is successively by entering into the gate pole (G) of IGBT after drive amplification circuit and gate pole protective circuit; The emitter of IGBT (E) ground connection.

2. drive circuit according to claim 1, it is characterized in that, described IGBT over-voltage over-current protection circuit comprises: the three or four avalanche diode (V34), the three or two avalanche diode (V32), the two or six resistance (R26), the 31 voltage stabilizing didoe (V31), the two or seven resistance (R27), the 30 triode (V30), the two or four resistance (R24), the two or five resistance (R25), the three or three diode (V33), the two or nine resistance (R29), the 3rd zero resistance (R30) and the one or seven electric capacity (C17);

The collector electrode of IGBT (C) is connected with the cathodic electricity of the three or four avalanche diode (V34), the anode of the three or four avalanche diode (V34) is connected with the cathodic electricity of the three or two avalanche diode (V32), the anode of the three or two avalanche diode (V32) is connected with the cathodic electricity of the 31 voltage stabilizing didoe (V31) by the two or six resistance (R26), the anode of the 31 voltage stabilizing didoe (V31) is electrically connected to the base stage of the 30 triode (V30) by the two or seven resistance (R27), the collector electrode of the 30 triode (V30) is electrically connected to the IGBT overvoltage short-circuit protection input of master control logic circuit, the grounded emitter of the 30 triode (V30),

One end of the two or four resistance (R24) is electrically connected to the collector electrode of the 30 triode (V30), and its other end is electrically connected to the first high-pressure side power output end (V2P+);

One end of the two or five resistance (R25) is connected with the cathodic electricity of the 31 voltage stabilizing didoe (V31), and its other end is electrically connected to the first high-pressure side power output end (V2P+);

The plus earth of the three or three diode (V33), the negative electrode of the three or three diode (V33) is connected with the cathodic electricity of the 31 voltage stabilizing didoe (V31);

One end ground connection of the two or nine resistance (R29), its other end is electrically connected to the anode of the 31 voltage stabilizing didoe (V31);

The 3rd zero resistance (R30) is in parallel with the one or seven electric capacity (C17), thereby form two sys nodes, one of them sys node is electrically connected to the emitter of the 30 triode (V30), and another sys node is electrically connected to the base stage of the 30 triode (V30).

3. drive circuit according to claim 1, it is characterized in that, described positive voltage protective circuit comprises: the three or eight triode (V38), three nine-day periods after the winter solstice voltage stabilizing didoe (V39), the three or six resistance (R36), the three or three resistance (R33) and pseudo-ginseng resistance (R37);

The three or eight collector electrode of triode (V38) and the positive voltage of master control logic circuit protection input are electrically connected to, the emitter of the three or eight triode (V38) is electrically connected to the first high-pressure side power output end (V2P+), the base stage of the three or eight triode (V38) is connected with the cathodic electricity of three nine-day periods after the winter solstice voltage stabilizing didoe (V39), and the anode of three nine-day periods after the winter solstice voltage stabilizing didoe (V39) is by the three or six resistance (R36) ground connection;

One end ground connection of the three or three resistance (R33), its other end is electrically connected to the collector electrode of the three or eight triode (V38);

One end of pseudo-ginseng resistance (R37) is electrically connected to the emitter of the three or eight triode (V38), and the other end is electrically connected to the base stage of the three or eight triode (V38).

4. drive circuit according to claim 1, it is characterized in that, described negative voltage protective circuit comprises: the three or five triode (V35), the three or six voltage stabilizing didoe (V36), the three or four resistance (R34), the three or two resistance (R32), the 31 resistance (R31), pseudo-ginseng diode (V37) and the three or five resistance (R35);

The emitter of the three or five triode (V35) is electrically connected to the second high-pressure side power output end (V2P-), the base stage of the three or five triode (V35) is electrically connected to the anode of the three or six voltage stabilizing didoe (V36), the negative electrode of the three or six voltage stabilizing didoe (V36) is by the three or four resistance (R34) ground connection, and the collector electrode of the three or five triode (V35) is electrically connected to the negative voltage protection input of master control logic circuit by the three or two resistance (R32);

One end of the 31 resistance (R31) is electrically connected to the first high-pressure side power output end (V2P+), and its other end is electrically connected to the collector electrode of the three or five triode (V35) by the three or two resistance (R32);

The plus earth of pseudo-ginseng diode (V37), the negative electrode of pseudo-ginseng diode (V37) is electrically connected to the collector electrode of the three or five triode (V35) by the three or two resistance (R32);

One end of the three or five resistance (R35) is electrically connected to the base stage of the three or five triode (V35), and its other end is electrically connected to the emitter of the three or five triode (V35).

5. according to the drive circuit described in any one in claim 1 to 4, it is characterized in that, described drive amplification circuit comprises: the 3rd metal-oxide-semiconductor drives chip (U3), the one or eight electric capacity (C18), the 40 diode (V40), the three or eight resistance (R38), the 41 resistance (R41), the 41 PMOS pipe (V41), the 4th metal-oxide-semiconductor drives chip (U4), the one or nine electric capacity (C19), the 4th zero resistance (R40), the four or two voltage stabilizing didoe (V42), the four or three diode (V43), the four or two resistance (R42), the four or three resistance (R43), the four or four NMOS pipe (V44), the second adaptation board resistance (RA2), the 4th adaptation board resistance (RA4), the first adaptation board resistance (RA1) and the first adaptation board electric capacity (CA1),

The 3rd metal-oxide-semiconductor drives first signal input pin and the equal ground connection of ground connection input pin of chip (U3); The 3rd metal-oxide-semiconductor drives the supply voltage input pin of chip (U3) to be electrically connected to one end of the first high-pressure side power output end (V2P+) and the one or eight electric capacity (C18), the other end ground connection of the one or eight electric capacity (C18);

The 3rd metal-oxide-semiconductor drives the secondary signal input pin of chip (U3) to be electrically connected to the control signal output of master control logic circuit, the 3rd metal-oxide-semiconductor drives the secondary signal output pin of chip (U3) to be electrically connected to the anode of the 40 diode (V40), the negative electrode of the 40 diode (V40) is electrically connected to the grid of the 41 PMOS pipe (V41) by the three or eight resistance (R38), the source electrode of the 41 PMOS pipe (V41) is electrically connected to the first high-pressure side power output end (V2P+), the drain electrode of the 41 PMOS pipe (V41) is electrically connected to one end of the second adaptation board resistance (RA2),

One end of the 41 resistance (R41) is electrically connected to the anode of the 40 diode (V40), and its other end is electrically connected to the grid that the 41 PMOS manages (V41);

The 4th metal-oxide-semiconductor drives the supply voltage input pin ground connection of chip (U4); The 4th metal-oxide-semiconductor drives after the first signal input pin and the parallel connection of ground connection input pin of chip (U4), is electrically connected to the other end ground connection of the one or nine electric capacity (C19) with one end of the second high-pressure side power output end (V2P-) and the one or nine electric capacity (C19);

The 4th metal-oxide-semiconductor drives the secondary signal input pin of chip (U4) to be electrically connected to the 4th one end of zero resistance (R40) and the anode of the four or two voltage stabilizing didoe (V42) respectively, the other end of the 4th zero resistance (R40) is electrically connected to the second high-pressure side power output end (V2P-), and the negative electrode of the four or two voltage stabilizing didoe (V42) drives the secondary signal output pin of chip (U3) to be electrically connected to the 3rd metal-oxide-semiconductor; The 4th metal-oxide-semiconductor drives the secondary signal output pin of chip (U4) to be connected with the cathodic electricity of the four or three diode (V43), the anode of the four or three diode (V43) is electrically connected to the grid of the four or four NMOS pipe (V44) by the four or two resistance (R42), the source electrode of the four or four NMOS pipe (V44) is electrically connected to the second high-pressure side power output end (V2P-), and the drain electrode of the four or four NMOS pipe (V44) is electrically connected to one end of the 4th adaptation board resistance (RA4);

One end of the four or three resistance (R43) is connected with the cathodic electricity of the four or three diode (V43), and its other end is electrically connected to the grid that the four or four NMOS manages (V44);

The other end of the second adaptation board resistance (RA2) is electrically connected to the other end of the 4th adaptation board resistance (RA4), and after one end of the one end with the first adaptation board resistance (RA1) and the first adaptation board electric capacity (CA1) is electrically connected to, as the IGBT gate-drive line output of drive amplification circuit;

The other end of the other end of the first adaptation board resistance (RA1) and the first adaptation board electric capacity (CA1) is electrically connected to, and after ground connection, as the IGBT emitter drive wire output of drive amplification circuit.

6. drive circuit according to claim 5, is characterized in that, described gate pole protective circuit comprises bilateral transient voltage suppression diode (VA1); This bilateral transient voltage suppression diode (VA1) is connected in parallel between the IGBT gate-drive line and IGBT emitter drive wire of drive amplification circuit output;

The IGBT gate-drive line of drive amplification circuit output, after the one end with bilateral transient voltage suppression diode (VA1) is electrically connected to, is electrically connected to the gate pole (G) of IGBT;

The IGBT emitter drive wire of drive amplification circuit output, after the other end with bilateral transient voltage suppression diode (VA1) is electrically connected to, is electrically connected to the emitter (E) of IGBT.

7. drive circuit according to claim 5, it is characterized in that, the second adaptation board resistance (RA2) of described gate pole protective circuit and drive amplification circuit, the 4th adaptation board resistance (RA4), the first adaptation board resistance (RA1) and the first adaptation board electric capacity (CA1) are all arranged at and drive on adaptation board;

Described drive amplification circuit comprises the driving Card Adapter Port consisting of the first binding post (Xl-1), the second binding post (Xl-2) and the 3rd binding post (Xl-3);

The first binding post (Xl-1) is electrically connected to the drain electrode of the 41 PMOS pipe (V41); The second binding post (Xl-2) is electrically connected to the drain electrode of the four or four NMOS pipe (V44); The 3rd binding post (Xl-3) ground connection;

Driving on adaptation board, the interface line of corresponding the first binding post (Xl-1) is electrically connected to one end of the second adaptation board resistance (RA2), the interface line of corresponding the second binding post (Xl-2) is electrically connected to one end of the 4th adaptation board resistance (RA4), and ground connection one end of the corresponding interface line of the 3rd binding post (Xl-3) and ground connection one end of the first adaptation board resistance (RA1) and the first adaptation board electric capacity (CA1) is electrically connected to.