CN104617753B - Gate drive circuit plate, gate-drive unit and its driving method - Google Patents
Gate drive circuit plate, gate-drive unit and its driving method Download PDFInfo
- Publication number
- CN104617753B CN104617753B CN201510035566.2A CN201510035566A CN104617753B CN 104617753 B CN104617753 B CN 104617753B CN 201510035566 A CN201510035566 A CN 201510035566A CN 104617753 B CN104617753 B CN 104617753B
- Authority
- CN
- China
- Prior art keywords
- gate
- igbt
- module
- high pressure
- drive unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
Abstract
The present invention relates to a kind of gate drive circuit plate; to drive control high-power IGBT transistor; including CPLD main control chips, primary low pressure PCB, secondary high pressure PCB, isolation drive transformer and high pressure partial pressure PCB; gate-drive unit in gate drive circuit plate includes power module; high pressure division module, short circuit protection module, malfunction coefficient module; failure feedback module, self-inspection self-recovery module and fiber boot module.Gate drive circuit plate of the invention, gate-drive unit and its driving method are replaced for same specification GDU DYTP 140A both at home and abroad always in the past provide renewal and provide alternative, and on year-on-year basis for imported product, not only reduce cost, efficiency is improve, its obvious advantage is determined with the more excellent service of more excellent performance.
Description
Technical field
It is especially a kind of for controlling and monitoring that the gate pole of IGBT states drives in trailer system the present invention relates to trailer system
Dynamic circuit board, gate-drive unit and its driving method.
Background technology
In trailer system, the control of VVVF inversions and copped wave is completed by the break-make of high-capacity transistor module I GBT more,
Thus IGBT plays key effect in this system.The state of efficient control and monitoring IGBT necessarily turns into whole traction
A most key part in system.
Gate-drive unit (Gate Drive Unit, abbreviation GDU), one kind is used to drive control high-power IGBT crystal
The programmable printed circuit board (PCB) of pipe, the extensive use especially in traction control.In past 10 years, domestic and international motor-car, subway
Basic several families such as BOMBARDIER, SIEMENS, ALSTOM of main flow of traction control Deng vehicle etc., its ripe technology,
Stabilization performance and far-reaching influence occupies staple market in the industry.
But in recent years, it is existing both at home and abroad to use the longevity to it substantially with the traction control environment division part used on vehicle
The GDU of life, especially direct correlation IGBT high power loads is exactly that the part of fault rate fragile rate high high will welcome greatly originally
Scale it is aging, damage and the situation that must change.Right original-pack part (such as BOMBARDIER) delivery cycle is long, and price is high, and
There was only pre-sales service for the part does not have after-sale technical support.Constantly carried because domestic and international relative clients are cognitive in recent years
Height, there is certain understanding to correlation technique, and crucial element is familiar with, it is believed that the integrated level of the GDU parts is limited, just into
This and selling price are more excessive than difference, and import price is too high, excessive cycle, and expect that in GDU failures, damage technology can be provided
Support, can be repaired in the case of key property is not influenceed or Improving advice is provided, and for these demand imported with original packaging just not
Can reach.
The content of the invention
The technical problem to be solved in the present invention is：In order to provide a kind of gate drive circuit plate, gate-drive unit and its
Driving method, integrated level is high, cost is relatively low, it is ensured that the performance of IGBT.
The technical solution adopted for the present invention to solve the technical problems is：A kind of gate drive circuit plate, is used to drive control
High-power IGBT transistor processed, including CPLD main control chips, primary low pressure PCB, secondary high pressure PCB, isolation drive transformer and
High pressure partial pressure PCB, is connected, the CPLD master between the primary low pressure PCB, secondary high pressure PCB by isolation drive transformer
Control chip, high pressure partial pressure PCB are fixed on secondary high pressure PCB.
Power interface, connection supply voltage 24V DC (+5%, -10%), described time are provided with the primary low pressure PCB
Gate pole interface is provided with level high pressure PCB and emitter stage sets of interfaces is fit, connection IGBT gate poles and emitter stage, colelctor electrode interface,
The IGBT colelctor electrodes of different voltage class are connected, emitter stage interface connects IGBT emitter stages, and CPLD main control chip download programs connect
Mouth and test interface, optical fiber receiving interface, IGBT switching signals, optical fiber transmission interface, GDU failure feedback signals.
The high pressure partial pressure PCB uses base material S1141, instead of former import ceramic wafer mode, the big work(of configuration speciality high accuracy
Rate resistance completes circuit configuration, functionally reaches original-pack mode and requires, is higher than original-pack design in performance, more accurately timely
Monitoring IGBT states.And convenient treatment in original-pack ceramic wafer technique is substituted using base material S1141, further controlled on cost
System.
Status indicator lamp, including green light and red light are provided with the secondary high pressure PCB, for showing that IGBT and GDU be
No normal work.
The present invention also provides a kind of gate-drive unit, including
Power module, receives external dc supply voltage, and voltage needed for converting voltage to each logical device and
The drive control voltage of IGBT；
High pressure division module, connects the IGBT colelctor electrodes of different voltage class, by the scaled V of bleeder circuitCEAnd
Monitor in real time, determines IGBT working conditions and whether normal；
Short circuit protection module, connects the gate pole-emitter stage of IGBT, for monitoring IGBT gate poles and emitter current, and sentences
It is disconnected whether to start or turn off IGBT；
Malfunction coefficient module, is connected with power module, high pressure division module, short circuit protection module, indicates power module shape
State, real-time monitoring high pressure division module, short circuit protection module, and fault-signal is reported an error display；
Failure feedback module, is connected with malfunction coefficient module, and fault-signal is fed back into higher level DCU；
Self-inspection self-recovery module, is connected with high pressure division module, short circuit protection module, and failure carries out self-inspection after removing, really
Recognize each functional status it is normal after automatically reset and enter normal operating conditions；
Fiber boot module, is connected with self-inspection self-recovery module, and self-inspection is normally switched by higher level DCU Setting signals afterwards
IGBT。
In the short circuit protection module, short circuit current is limited in 290mA, more than i.e. be judged to that short circuit enters guard mode,
ON signal is locked while shut-off IGBT, normal operating conditions is recovered in normal range (NR) until failure removes current monitoring.
IGBT emitter Es are additionally provided with the short circuit protection modulemainMonitoring module, for monitoring IGBT emitter stage shapes
State, monitors the E of IGBTmain=＞ EkelvinCurent change more than 5kA/ms, when voltage variety is more than 150V, be judged to short
Road is protected, and IGBT is turned off in time and ON signal is locked, and normal operating conditions is recovered until failure is removed after self-inspection passes through.
The present invention also provides a kind of driving method of gate-drive unit, comprises the following steps：
(1) according to the selected correct CPLD programs of IGBT model parameter configurations and firmware loads；
(2) the gate-drive unit is connected with IGBT；
(3) electricity on, sends enabling signal, and gate-drive unit is by self-inspection and enters normal mode of operation；
(4) gate-drive unit and each performance parameters of IGBT are detected in the course of work, occurs to be turned off when overvoltage, over current fault
IGBT simultaneously indicates to report an error；
(5) signal is fed back in higher level DCU during failure, and locks enabling signal, until malfunction elimination is removed；
Etc. (6) after pending fault is removed, self-inspection passes through, and time-delay reset enters normal operating conditions.
The beneficial effects of the invention are as follows：Gate drive circuit plate of the invention, gate-drive unit and its driving method are met
Environment instantly is closed, offer alternative has been replaced for same specification GDU-DYTP 140A both at home and abroad always in the past provide renewal,
And also solve suspection of the client for the component deterioration instead of the buying of import finished product by independent research, there is provided reliable technology branch
Hold and specialty after-sale service, and not only reduce cost for imported product on year-on-year basis, efficiency is improve, with more excellent property
Can more excellent service its obvious advantage is determined.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is the structural representation of gate drive circuit plate of the present invention.
Specific embodiment
In conjunction with the accompanying drawings, the present invention is further explained in detail.These accompanying drawings are simplified schematic diagram, only with
Illustration illustrates basic structure of the invention, therefore it only shows the composition relevant with the present invention.
As shown in figure 1, a kind of gate drive circuit plate, to drive control high-power IGBT transistor, including CPLD master
Control chip 5, primary low pressure PCB1, secondary high pressure PCB3, isolation drive transformer 2 and high pressure partial pressure PCB4, the primary low pressure
Connected by isolation drive transformer 2 between PCB1, secondary high pressure PCB3, the CPLD main control chips 5, high pressure partial pressure PCB4 consolidate
It is scheduled on secondary high pressure PCB3, the high pressure partial pressure PCB4 uses base material S1141, and power supply is provided with the primary low pressure PCB1
Interface 6, is provided with gate pole interface and emitter stage sets of interfaces zoarium 8, colelctor electrode interface 9, emitter stage on the secondary high pressure PCB3
Interface 7, CPLD main control chip download program interfaces and test interface 12, optical fiber receiving interface 10, optical fiber transmission interface 11 and shape
State indicator lamp 13.
The gate drive circuit plate is the PCB of a drive control high-power IGBT, is to IGBT by its major function
The drive control of pole and to IGBT items electrical property monitoring, by function define name gate-drive unit (GDU).The GDU is leading
Draw during control is applied particularly extensively, it is one of core component of pull-in control system to be.
The GDU is universal driver element, it is adaptable to various different manufacturers model IGBT, and loading different configurators makes
Its Corresponding matching different model IGBT realizes diverse location function.Mainly realize following functions：Overvoltage, overcurrent protection；Short circuit is protected
Shield；Self- recoverage diode is controlled；Optimization, compensating switch loss；Regulation control dVCE/ dt and dIC/ dt ensures switching speed；IGBT
Status monitoring, failure feedback.
From into loop during the GDU normal works, software and hardware logic carries out self-monitoring and right with each function of tonic chord part
The monitoring of IGBT.
The gate drive circuit plate contains a kind of gate-drive unit, including
Power module, receives external dc supply voltage, and convert voltage to each logical device institute by power interface 6
The voltage and the drive control voltage of IGBT for needing, 24VDC (+5%, -10%) power supplies, the isolation drive of independent research is taken charge of by me
Transformer primary and secondary is isolated, by power conversion chip secondary conversion into+3.3V ,+5V ,+17V and each logical device institutes of ± 15V
Drive control voltage need and IGBT, external dc supply voltage enters normal operating conditions by rising to 18-21V, and
And each power supply potential be maintained at normal current potential can normal work and to IGBT drive controls, power self test is not referred to by all failures
Show and lock IGBT startup functions self- recoverage after power failure is removed and enter normal mode of operation；
High pressure division module, the IGBT colelctor electrodes of different voltage class is connected by colelctor electrode interface 9, by bleeder circuit
Scaled VCEAnd monitor in real time, determine IGBT working conditions and whether normal, and the partial circuit is provided with overvoltage protection
Function, can immediately turn off IGBT and lock ON signal during monitoring IGBT overvoltages, recover GDU within time delay 3-4 seconds after overvoltage is removed
Normal operating conditions, and the component gives IGBT precharge by low pressure 24VDC, it is ensured that speed during switch, reduce loss, should
The IGBT colelctor electrode interfaces of function direct correlation, the IGBT according to different size model selects different voltage class wiring sides
Formula；
Short circuit protection module, the gate pole and emitter stage of IGBT are connected by gate pole interface and emitter stage sets of interfaces fit 8, are used
Door emitter current IGE is monitored while starting and turning off IGBT, 290mA is limited in, protected more than being judged to that short circuit enters
State, ON signal is locked while shut-off IGBT, and normal work is recovered until failure removes current monitoring GDU in normal range (NR)
State, emitter stage interface connection IGBT emitter Esmain, IGBT emitter stage states are monitored, when IGBT is opened, monitoring IGBT's
Emain=＞ EkelvinCurent change more than 5kA/ms, when voltage variety is more than 150V, be judged to short-circuit protection, in time close
Disconnected IGBT simultaneously locks ON signal, and normal mode of operation is recovered until failure is removed after self-inspection passes through；
Malfunction coefficient module, is connected with high pressure division module, short circuit protection module, real-time monitoring high pressure division module, short
Road protection module, and fault-signal is reported an error display, when starting work, all terminal gate poles that GDU is associated with exterior I GBT connect
Mouth and emitter stage sets of interfaces zoarium, state all real-time monitorings of colelctor electrode interface, emitter stage interface, when connection error or short circuit etc.
Situation red LED flicker failure can all be reported an error in time, and normal mode of operation is recovered after Awaiting Overhaul and correction；
Failure feedback module, is connected with malfunction coefficient module, and is connected with higher level DCU by optical fiber transmission interface 11,
Do not fed back during normal work, optical signal is given during failure in higher level DCU；
Self-inspection self-recovery module, is connected with high pressure division module, short circuit protection module, and failure carries out self-inspection after removing, really
Time delay 3-4s automatically resets and enters normal operating conditions after recognizing each functional status normally；
Fiber boot module, is connected with self-inspection self-recovery module, and is connected with higher level DCU by optical fiber receiving interface 10,
Reception comes from the enabling signal of higher level DCU, and Setting signal switch IGBT is normally pressed in self-inspection afterwards.
The driving method of the gate-drive unit, comprises the following steps：
(1) according to the selected correct CPLD programs of IGBT model parameter configurations and firmware loads；
(2) the gate-drive unit is connected with IGBT；
(3) electricity on, sends enabling signal, and gate-drive unit is by self-inspection and enters normal mode of operation；
(4) gate-drive unit and each performance parameters of IGBT are detected in the course of work, occurs to be closed during the failures such as overvoltage, excessively stream
Disconnected IGBT simultaneously indicates to report an error；
(5) signal is fed back in higher level DCU during failure, and locks enabling signal, until malfunction elimination is removed；
Etc. (6) after pending fault is removed, self-inspection passes through, and time-delay reset enters normal operating conditions.
The present invention compatible major part GDU appellative functions, can directly substitute similar other products, although with Pang Badi etc.
Like product is using can above replace mutually, but the absolute predominance of itself determines that it is irreplaceable in selection and Application again
Status.
Gate drive circuit plate of the invention, gate-drive unit and its driving method have catered to environment instantly, are domestic
Same specification GDU-DYTP 140A always of outer past are provided to update to replace and are provided alternative, and replace entering by independent research
Mouth finished product buying also solves suspection of the client for the component deterioration, there is provided the clothes after sale of reliable technical support and specialty
Business, and cost is not only reduced for imported product on year-on-year basis, efficiency is improve, determined with the more excellent service of more excellent performance
Its obvious advantage.
With above-mentioned according to desirable embodiment of the invention as enlightenment, by above-mentioned description, relevant staff is complete
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.The technology of this invention
Property scope is not limited to the content on specification, it is necessary to its technical scope is determined according to right.
Claims (7)
1. a kind of gate-drive unit, using gate drive circuit plate, gate drive circuit plate is high-power to drive control
Igbt transistor, gate drive circuit plate includes that CPLD main control chips, primary low pressure PCB, secondary high pressure PCB, isolation drive become
Depressor and high pressure partial pressure PCB, are connected between the primary low pressure PCB, secondary high pressure PCB by isolation drive transformer, described
CPLD main control chips, high pressure partial pressure PCB are fixed on secondary high pressure PCB, it is characterised in that gate-drive unit includes：
Power module, receives external dc supply voltage, and voltage needed for converting voltage to each logical device and IGBT
Drive control voltage；
High pressure division module, connects the IGBT colelctor electrodes of different voltage class, by the scaled V of bleeder circuitCEAnd in real time
Monitoring, determines IGBT working conditions and whether normal；
Short circuit protection module, connects the gate pole-emitter stage of IGBT, and for monitoring IGBT gate poles and emitter current, and judgement is
No startup or shut-off IGBT；
Malfunction coefficient module, is connected with power module, high pressure division module, short circuit protection module, indicates power module state, real
When monitoring high pressure division module, short circuit protection module, and fault-signal is reported an error display；
Failure feedback module, is connected with malfunction coefficient module, and fault-signal is fed back into higher level DCU；
Self-inspection self-recovery module, is connected with high pressure division module, short circuit protection module, and failure carries out self-inspection after removing, and confirms each
Automatically reset after functional status is normal and enter normal operating conditions；
Fiber boot module, is connected with self-inspection self-recovery module, and self-inspection normally switchs IGBT by higher level DCU Setting signals afterwards.
2. gate-drive unit as claimed in claim 1, it is characterised in that：Power supply is provided with the primary low pressure PCB to connect
Mouthful, be provided with the secondary high pressure PCB gate pole interface and emitter stage sets of interfaces zoarium, colelctor electrode interface, emitter stage interface,
CPLD main control chip download program interfaces and test interface, optical fiber receiving interface and optical fiber transmission interface.
3. gate-drive unit as claimed in claim 1, it is characterised in that：The high pressure partial pressure PCB uses base material S1141.
4. gate-drive unit as claimed in claim 1, it is characterised in that：Stateful finger is set on the secondary high pressure PCB
Show lamp.
5. gate-drive unit as claimed in claim 1, it is characterised in that：In the short circuit protection module, short circuit current limit
System, more than being judged to that short circuit enters guard mode, ON signal is locked while turning off IGBT in 290mA, until failure is removed
Current monitoring recovers normal operating conditions in normal range (NR).
6. gate-drive unit as claimed in claim 5, it is characterised in that：IGBT is additionally provided with the short circuit protection module
Emitter EmainMonitoring module, for monitoring IGBT emitter stage states, monitors the E of IGBTmain=＞ EkelvinCurent change surpass
5kA/ms is crossed, when voltage variety is more than 150V, is judged to short-circuit protection, IGBT turned off in time and ON signal is locked, until event
Barrier is removed after self-inspection passes through and recovers normal operating conditions.
7. a kind of driving method using gate-drive unit as claimed in claim 6, it is characterised in that：Including following step
Suddenly：
(1) according to the selected correct CPLD programs of IGBT model parameter configurations and firmware loads；
(2) the gate-drive unit is connected with IGBT；
(3) electricity on, sends enabling signal, and gate-drive unit is by self-inspection and enters normal mode of operation；
(4) gate-drive unit and each performance parameters of IGBT are detected in the course of work, occurs to turn off IGBT when overvoltage, over current fault
And instruction reports an error；
(5) signal is fed back in higher level DCU during failure, and locks enabling signal, until malfunction elimination is removed；
Etc. (6) after pending fault is removed, self-inspection passes through, and time-delay reset enters normal operating conditions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510035566.2A CN104617753B (en) | 2015-01-20 | 2015-01-20 | Gate drive circuit plate, gate-drive unit and its driving method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510035566.2A CN104617753B (en) | 2015-01-20 | 2015-01-20 | Gate drive circuit plate, gate-drive unit and its driving method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104617753A CN104617753A (en) | 2015-05-13 |
| CN104617753B true CN104617753B (en) | 2017-06-16 |
Family
ID=53152081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510035566.2A Active CN104617753B (en) | 2015-01-20 | 2015-01-20 | Gate drive circuit plate, gate-drive unit and its driving method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104617753B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105223491B (en) * | 2015-09-23 | 2017-11-10 | 常州大学 | One kind driving protection simulating test device |
| CN107068676B (en) | 2017-03-13 | 2019-08-27 | Oppo广东移动通信有限公司 | A kind of default standard chip, manufacturing method and mobile terminal |
| CN107404216B (en) * | 2017-06-22 | 2019-10-01 | 江苏广义牵引技术研究所有限公司 | Universal high-power IGBT drive control device and control method |
| CN107483034B (en) * | 2017-07-13 | 2021-12-17 | 江苏广义牵引技术研究所有限公司 | High-power IGBT drive controller and control method |
| CN110568782B (en) * | 2018-06-06 | 2021-05-25 | 佛山市顺德区美的电热电器制造有限公司 | Method and device for configuring driving parameters of driving chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231595A (en) * | 2011-07-06 | 2011-11-02 | 深圳市英威腾电气股份有限公司 | Drive circuit of insulated gate bipolar transistor |
| CN102739050A (en) * | 2012-07-11 | 2012-10-17 | 北京赛德高科铁道电气科技有限责任公司 | DC/DC (direct current) chopper circuit for auxiliary converter cabinet of electric locomotive |
| CN203522511U (en) * | 2013-10-23 | 2014-04-02 | 北京赛德高科铁道电气科技有限责任公司 | IGBT driving circuit of converter for electric locomotive |
-
2015
- 2015-01-20 CN CN201510035566.2A patent/CN104617753B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231595A (en) * | 2011-07-06 | 2011-11-02 | 深圳市英威腾电气股份有限公司 | Drive circuit of insulated gate bipolar transistor |
| CN102739050A (en) * | 2012-07-11 | 2012-10-17 | 北京赛德高科铁道电气科技有限责任公司 | DC/DC (direct current) chopper circuit for auxiliary converter cabinet of electric locomotive |
| CN203522511U (en) * | 2013-10-23 | 2014-04-02 | 北京赛德高科铁道电气科技有限责任公司 | IGBT driving circuit of converter for electric locomotive |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104617753A (en) | 2015-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104617753B (en) | Gate drive circuit plate, gate-drive unit and its driving method | |
| CN103096561B (en) | Constant current driver of light emitting diode (LED) light source | |
| CN107404216B (en) | Universal high-power IGBT drive control device and control method | |
| CN103797714A (en) | Gate control circuit, power module and associated method | |
| CN210123890U (en) | Motor controller hardware circuit | |
| CN110445102A (en) | A kind of electronic RELAY devices and guard method | |
| CN109027384A (en) | A kind of electromagnetic valve actuator and its driving method | |
| CN109873408A (en) | A kind of substation quickly isolates device and partition method with D. C. power source breakdown | |
| CN103186219A (en) | Redundancy computer power supply and control method thereof | |
| CN103802841A (en) | Electric locomotive traction control unit and control method | |
| CN103095099A (en) | Load drive circuit | |
| CN103430436A (en) | Power supply circuit | |
| CN204479726U (en) | The indicating fault control circuit of the two redundant electrical pow er supply system of a kind of airplane signal lamp | |
| CN208670219U (en) | A kind of electromagnetic valve actuator | |
| CN103021200A (en) | Device and method for diagnosing fault of traffic signal lamp and controlling machine of traffic signal lamp | |
| CN104244542A (en) | Fault detection response circuit for highway tunnel LED illumination dimming control device | |
| CN105186836A (en) | Power supply under-voltage protection method and protection circuit thereof | |
| CN107483034B (en) | High-power IGBT drive controller and control method | |
| CN202111450U (en) | Overcurrent protection circuit and television | |
| CN107070187A (en) | A kind of H bridges change of current module drive circuit and modularization multi-level converter | |
| CN202870260U (en) | Device for detecting automobile electrical appliance switch | |
| CN203799230U (en) | Intelligent cooling-control system for transformer | |
| CN204290795U (en) | A kind of intelligent water pump overall-in-one control schema plate | |
| CN201388315Y (en) | Driver for LED street lamp | |
| CN2799793Y (en) | Controller for electric automobile window |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| DD01 | Delivery of document by public notice |
Addressee: JIANGSU OCPT INSTITUTE Co.,Ltd. Person in charge of patentsThe principal of patent Document name: payment instructions |
|
| DD01 | Delivery of document by public notice | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Gate driving circuit board, gate driving unit, and driving method thereof Effective date of registration: 20230913 Granted publication date: 20170616 Pledgee: Bank of China Limited Liyang Branch Pledgor: JIANGSU OCPT INSTITUTE Co.,Ltd. Registration number: Y2023980056137 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |