CN102231595A

CN102231595A - Drive circuit of insulated gate bipolar transistor

Info

Publication number: CN102231595A
Application number: CN2011101883569A
Authority: CN
Inventors: 申大力
Original assignee: Shenzhen Invt Electric Co Ltd
Current assignee: Shenzhen yingweiteng Photovoltaic Technology Co. Ltd.
Priority date: 2011-07-06
Filing date: 2011-07-06
Publication date: 2011-11-02
Anticipated expiration: 2031-07-06
Also published as: CN102231595B

Abstract

The invention, which relates to the power electronics field, discloses a drive circuit of an insulated gate bipolar transistor (IGBT). The drive circuit includes a power supply circuit that is used for generating a driving power supply of a first path and a driving power supply of a second path. The power supply circuit is also used for respectively inputting the driving power supply of the first path and the driving power supply of the second path into a first drive circuit and a second drive circuit. The first drive circuit, which is driven by the driving power supply of the first path, outputs a drive signal of a first path, and the drive signal of the first path is used for driving a first IGBT; the second drive circuit, which is driven by the driving power supply of the second path, outputs a drive signal of a second path, and the drive signal of the second path is used for driving a second IGBT. According to the drive circuit of the IGBT, two IGBTs can be driven, which is in favor of miniaturization and cost reduction of the IGBT drive circuit.

Description

A kind of bipolar transistor driving circuit of insulated gate

Technical field

The present invention relates to field of power electronics, be specifically related to a kind of insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) drive circuit.

Background technology

At inverter, frequency converter, lighting circuit, traction transmission, uninterrupted power supply (Uninterruptible Power System; UPS) etc. in the power electronic equipment; IGBT is as main device for power switching; the reliability of its work (comprise and driving and protection) will directly have influence on the reliability of whole device, so about a lot of different drive circuits having occurred in the IGBT driving industry.For example, more typical IGBT drive circuit is favourable carries out the IGBT driving, utilizes photoisolator PC929 to carry out IGBT driving or the like with optocoupler HCPL3120 or HCPL316J.

In existing IGBT drive circuit, the driving power of IGBT is produced by accessory power supply.The inventor finds in the practice, and the accessory power supply of IGBT drive circuit generally can only produce one road driving power, drives an IGBT.When needs drive a plurality of IGBT, just a plurality of accessory power supplys need be set, thereby limit the miniaturization and the low cost of IGBT drive circuit.

Summary of the invention

At above-mentioned defective, the invention provides a kind of bipolar transistor driving circuit of insulated gate, this drive circuit can produce the two-way driving power, is used for realizing two IGBT are driven, thereby helps the miniaturization and the low cost of IGBT drive circuit.

A kind of bipolar transistor driving circuit of insulated gate comprises:

Be used to produce the power circuit of the first via driving power and the second road driving power, described power circuit also is used for the described first via driving power and the second road driving power are imported first drive circuit and second drive circuit respectively;

Described first drive circuit is used for output first via drive signal under the driving of described first via driving power, and described first via drive signal is used to drive first insulated gate bipolar transistor;

Described second drive circuit is used for output the second tunnel drive signal under the driving of described the second road driving power, and described the second tunnel drive signal is used to drive second insulated gate bipolar transistor.

Among the embodiment, described power circuit comprises:

Pulse-generating circuit is used to produce first via potential pulse, the second road potential pulse and inputs to amplification treatment circuit;

Described amplification treatment circuit is used for described first via potential pulse, the second road potential pulse are carried out respectively inputing to after the processing and amplifying the former limit of driving transformer;

Described driving transformer, be used for the first via potential pulse after the processing and amplifying and the second road potential pulse are carried out the transformation processing respectively, and described driving transformer two-way secondary is exported first via drive voltage pulses to the first voltage multiplying rectifier filter circuit respectively, and exports the second tunnel drive voltage pulses to the second voltage multiplying rectifier filter circuit;

The described first voltage multiplying rectifier filter circuit, after being used for described first via drive voltage pulses carried out the voltage multiplying rectifier Filtering Processing, output first via driving voltage is to first via bleeder circuit;

Described first via bleeder circuit is used for described first via driving voltage is carried out voltage division processing, obtains first via driving power and imports first drive circuit; Described first via driving power comprises the driving positive voltage, drives negative voltage and drives no-voltage;

The described second voltage multiplying rectifier filter circuit after being used for described the second tunnel drive voltage pulses carried out the voltage multiplying rectifier Filtering Processing, is exported the second road driving voltage to No. the second bleeder circuit;

Described No. the second bleeder circuit is used for described the second road driving voltage is carried out voltage division processing, obtains the second road driving power and imports second drive circuit; Described the second road driving power comprises the driving positive voltage, drives negative voltage and drives no-voltage.

Among the embodiment, described pulse-generating circuit comprises:

Resistance R 7, R10, capacitor C11, NAND gate A, B, C, D, constant voltage source and capacitor C4;

Described resistance R 7 one ends are electrically connected described NAND gate A input, and described resistance R 7 other ends are electrically connected described resistance R 10 1 ends; Described resistance R 10 other ends are electrically connected described NAND gate A output;

Described NAND gate A output is electrically connected described NAND gate B input, and described NAND gate B output is electrically connected described NAND gate C input; Described capacitor C11 one end is electrically connected described resistance R 7 other ends, and the described capacitor C11 other end is electrically connected described NAND gate C input; Described NAND gate C output is electrically connected described NAND gate D input; Described NAND gate C output is electrically connected the first input end of described amplification treatment circuit, and described NAND gate D output is electrically connected second input of described amplification treatment circuit;

Described NAND gate A input is electrically connected described capacitor C4 one end, and the described capacitor C4 other end is electrically connected described constant voltage source; Described capacitor C4 one end ground connection.

Among the embodiment, described amplification treatment circuit comprises:

Resistance R 1, resistance R 2, resistance R 3, resistance R 4, resistance R 5, resistance R 6, capacitor C1, capacitor C10, polar capacitor C9 and triode Q1～Q4;

Described resistance R 1 one ends are electrically connected described resistance R 3 one ends, and described resistance R 1 other end is electrically connected described resistance R 2 one ends; Described resistance R 2 other ends are electrically connected described resistance R 4 one ends; Described resistance R 4 other ends are electrically connected described resistance R 3 other ends;

Described resistance R 1 other end, described resistance R 2 one ends also are electrically connected described constant voltage source, and are electrically connected described capacitor C1 one end, described capacitor C1 other end ground connection; Described resistance R 1 other end, described resistance R 2 one ends also are electrically connected described polar capacitor C9 positive pole, described polar capacitor C9 minus earth;

Described resistance R 3 other ends are electrically connected described triode Q1 collector electrode, and described triode Q1 grid is electrically connected described resistance R 6 one ends, and described resistance R 6 other ends are electrically connected described NAND gate C output as the first input end of described amplification treatment circuit; Described triode Q1 grid is electrically connected described triode Q3 grid, and described triode Q3 emitter is electrically connected described triode Q1 emitter, described triode Q3 grounded collector; Described triode Q3 emitter and described triode Q1 emitter are electrically connected former limit one end points of described driving transformer respectively;

The collector electrode of described triode Q2 is electrically connected described resistance R 4 other ends and described resistance R 3 other ends; Described triode Q2 grid is electrically connected described resistance R 5 one ends, and described resistance R 5 other ends are electrically connected described NAND gate D output as second input of described amplification treatment circuit;

Described triode Q2 grid also is electrically connected described triode Q4 grid, and described triode Q2 emitter is electrically connected described triode Q4 emitter, described triode Q4 grounded collector; Be electrically connected described capacitor C10 between another end points of former limit of described triode Q2 emitter, described triode Q4 emitter and described driving transformer.

Among the embodiment, the described first voltage multiplying rectifier filter circuit comprises: capacitor C2, rectifier diode D1, polar capacitor C12, polar capacitor C15, capacitor C5, capacitor C6;

Described capacitor C2 one end is electrically connected described driving transformer first secondary one end points, and the described capacitor C2 other end is electrically connected described rectifier diode D1 second pin; Described rectifier diode D1 first pin is electrically connected another end points of described driving transformer first secondary; Described polar capacitor C12 of series connection and described polar capacitor C15 between described rectifier diode D1 the 3rd pin, first pin; Described polar capacitor C12 goes up described capacitor C5 in parallel, and described polar capacitor C15 goes up described capacitor C6 in parallel;

Described first via bleeder circuit comprises: resistance R 11, resistance R 12 and voltage stabilizing didoe Z1;

Described resistance R 11, resistance R 12 are connected in parallel on the described capacitor C5, and described voltage stabilizing didoe Z1 is connected in parallel on the described capacitor C6;

The driving positive voltage VDD1 of the described resistance R 11 that is electrically connected with described rectifier diode D1 the 3rd pin, resistance R 12 1 ends output first via driving power is to described first via drive circuit; The driving no-voltage DRVO1-of the tie point output first via driving power between described resistance R 11, resistance R 12 and the described voltage stabilizing didoe Z1 is to described first via drive circuit; The driving negative voltage GND1 of the described voltage stabilizing didoe Z1 one end output first via driving power that is electrically connected with described rectifier diode D1 first pin is to described first via drive circuit.

Among the embodiment, described first drive circuit comprises the first photoisolator ACPL-330J;

The pin 9,10,12 of the described first photoisolator ACPL-330J is electrically connected described rectifier diode D1 first pin respectively, imports the driving negative voltage GND1 of described first via driving power respectively; The pin 2,3 of the described first photoisolator ACPL-330J is electrically connected described constant voltage source respectively; The pin 13 of the described first photoisolator ACPL-330J is electrically connected described rectifier diode D1 the 3rd pin, is used to import the driving positive voltage VDD1 of described first via driving power; Series capacitor C17 between the pin 13 of the described first photoisolator ACPL-330J and the pin 12; The pin 16 of the described first photoisolator ACPL-330J is electrically connected the tie point between described resistance R 11, resistance R 12 and the described voltage stabilizing didoe Z1, is used to import the driving no-voltage DRVO1-of described first via driving power; Series capacitor C21 between the pin 16 of the described first photoisolator ACPL-330J and the pin 12, series capacitor C20 between the pin 16 of the described first photoisolator ACPL-330J and the pin 13;

The pin 5 of the described first photoisolator ACPL-330J, pin 8 ground connection; Pin 6, pin 7 are electrically connected resistance R 16 1 ends respectively, described resistance R 16 other end ground connection; Described pin 6, pin 7 also are electrically connected resistance diode D6 negative pole respectively, described diode D6 plus earth; Described pin 6, pin 7 also are electrically connected voltage stabilizing didoe Z3 positive pole respectively, and described voltage stabilizing didoe Z3 negative pole is used for input optical pulse signal DRV1;

The pin 11 of the described first photoisolator ACPL-330J is used to export first via drive signal described first insulated gate bipolar transistor is driven.

Among the embodiment, described first drive circuit also comprises first protective circuit, and described first protective circuit comprises capacitor C22, diode D4, resistance 8, resistance 9, diode D3 and diode D5;

Wherein, described capacitor C22 two ends are electrically connected pin 14 and the pin 16 of the described first photoisolator ACPL-330J respectively; Described diode D4 negative electricity connects the pin 14 of the described first photoisolator ACPL-330J, and described diode D4 positive electrical connects the pin 16 of the described first photoisolator ACPL-330J;

Described resistance R 8 one ends are electrically connected the pin 14 of the described first photoisolator ACPL-330J, described resistance R 8 other ends are electrically connected described resistance R 9 one ends and described diode D3 positive pole, described resistance R 9 other ends are electrically connected the pin 13 of the described first photoisolator ACPL-330J, described diode D3 negative electricity connects described diode D5 positive pole, and described diode D5 negative electricity connects the pin 13 of the described first photoisolator ACPL-330J;

Described diode D3 negative pole, also be used to insert the collector emitter voltage VCE1 of described first insulated gate bipolar transistor, as described VCE1 during more than or equal to preset value, described first protective circuit is passed through pin 14 input high levels of the described first photoisolator ACPL-330J to the described first photoisolator ACPL-330J, and the described first via drive signal of pin 11 outputs of the described first photoisolator ACPL-330J is for turn-offing drive signal; As described VCE1 during less than preset value; described first protective circuit is passed through pin 14 input low levels of the described first photoisolator ACPL-330J to the described first photoisolator ACPL-330J, and the described first via drive signal of pin 11 outputs of the described first photoisolator ACPL-330J is for opening drive signal.

Among the embodiment, described first drive circuit also comprises the first fault feedback circuit, and the described first fault feedback circuit comprises resistance R 19 and capacitor C23;

Wherein, described resistance R 19 1 ends are electrically connected pin 1, the pin 4 of the described first photoisolator ACPL-330J respectively, described resistance R 19 other end ground connection; Described capacitor C23 one end is electrically connected pin 1, the pin 4 of the described first photoisolator ACPL-330J, described capacitor C23 other end ground connection;

Wherein, with the pin 1 of the described first photoisolator ACPL-330J, described resistance R 19 1 ends that pin 4 is electrically connected, also be used to feed back the fault message UF1 of described first insulated gate bipolar transistor.

Among the embodiment, the described second voltage multiplying rectifier filter circuit comprises: capacitor C3, rectifier diode D2, polar capacitor C13, polar capacitor C14, capacitor C7, capacitor C8;

Described capacitor C3 one end is electrically connected described driving transformer second secondary one end points, and the described capacitor C3 other end is electrically connected described rectifier diode D2 second pin; Described rectifier diode D2 first pin is electrically connected another end points of described driving transformer second secondary; Described polar capacitor C13 of series connection and described polar capacitor C14 between described rectifier diode D2 the 3rd pin, first pin; Described polar capacitor C13 goes up described capacitor C7 in parallel, and described polar capacitor C14 goes up described capacitor C8 in parallel;

Described No. the second bleeder circuit comprises: resistance R 13, resistance R 14 and voltage stabilizing didoe Z2;

Described resistance R 13, resistance R 14 are connected in parallel on the described capacitor C7, and described voltage stabilizing didoe Z2 is connected in parallel on the described capacitor C8;

The driving positive voltage VDD2 that the described resistance R 13 that is electrically connected with described rectifier diode D2 the 3rd pin, resistance R 14 1 ends are exported the second road driving power is to described No. the second drive circuit; Tie point between described resistance R 13, resistance R 14 and the described voltage stabilizing didoe Z2 is exported the driving no-voltage DRVO2-of the second road driving power to described No. the second drive circuit; Described voltage stabilizing didoe Z2 one end that is electrically connected with described rectifier diode D2 first pin is exported the driving negative voltage GND2 of the second road driving power to described No. the second drive circuit.

Among the embodiment, described second drive circuit comprises the second photoisolator ACPL-330J;

The pin 9,10,12 of the described second photoisolator ACPL-330J is electrically connected described rectifier diode D2 first pin respectively, imports the driving negative voltage GND2 of described the second road driving power respectively; The pin 2,3 of the described second photoisolator ACPL-330J is electrically connected described constant voltage source respectively; The pin 13 of the described second photoisolator ACPL-330J is electrically connected described rectifier diode D2 the 3rd pin, is used to import the driving positive voltage VDD2 of described the second road driving power; Series capacitor C16 between the pin 13 of the described second photoisolator ACPL-330J and the pin 12; The pin 16 of the described second photoisolator ACPL-330J is electrically connected the tie point between described resistance R 13, resistance R 14 and the described voltage stabilizing didoe Z2, is used to import the driving no-voltage DRVO2-of described the second road driving power; Series capacitor C19 between the pin 16 of the described second photoisolator ACPL-330J and the pin 12, series capacitor C18 between the pin 16 of the described second photoisolator ACPL-330J and the pin 13;

The pin 5 of the described second photoisolator ACPL-330J, pin 8 ground connection; Pin 6, pin 7 are electrically connected resistance R 15 1 ends respectively, described resistance R 15 other end ground connection; Described pin 6, pin 7 also are electrically connected resistance diode D10 negative pole respectively, described diode D10 plus earth; Described pin 6, pin 7 also are electrically connected voltage stabilizing didoe Z5 positive pole respectively, and described voltage stabilizing didoe Z5 negative pole is used for input optical pulse signal DRV2;

The pin 11 of the described second photoisolator ACPL-330J is used to export the second tunnel drive signal described second insulated gate bipolar transistor is driven.

Among the embodiment, described second drive circuit also comprises second protective circuit, and described second protective circuit comprises capacitor C25, diode D8, resistance 17, resistance 18, diode D7 and diode D9;

Wherein, described capacitor C25 two ends are electrically connected pin 14 and the pin 16 of the described second photoisolator ACPL-330J respectively; Described diode D8 negative electricity connects the pin 14 of the described second photoisolator ACPL-330J, and described diode D8 positive electrical connects the pin 16 of the described second photoisolator ACPL-330J;

Described resistance R 17 1 ends are electrically connected the pin 14 of the described second photoisolator ACPL-330J, described resistance R 17 other ends are electrically connected described resistance R 18 1 ends and described diode D7 positive pole, described resistance R 18 other ends are electrically connected the pin 13 of the described second photoisolator ACPL-330J, described diode D7 negative electricity connects described diode D9 positive pole, and described diode D9 negative electricity connects the pin 13 of the described second photoisolator ACPL-330J;

Described diode D7 negative pole, also be used to insert the collector emitter voltage VCE2 of described second insulated gate bipolar transistor, as described VCE2 during more than or equal to preset value, described second protective circuit is passed through pin 14 input high levels of the described second photoisolator ACPL-330J to the described second photoisolator ACPL-330J, and described the second tunnel drive signal of pin 11 outputs of the described second photoisolator ACPL-330J is for turn-offing drive signal; As described VCE2 during less than preset value; described second protective circuit is passed through pin 14 input low levels of the described second photoisolator ACPL-330J to the described second photoisolator ACPL-330J, and described the second tunnel drive signal of pin 11 outputs of the described second photoisolator ACPL-330J is for opening drive signal.

Among the embodiment, described second drive circuit also comprises the second fault feedback circuit, and the described second fault feedback circuit comprises resistance R 86 and capacitor C44;

Wherein, described resistance R 86 1 ends are electrically connected pin 1, the pin 4 of the described second photoisolator ACPL-330J respectively, described resistance R 86 other end ground connection; Described capacitor C44 one end is electrically connected pin 1, the pin 4 of the described second photoisolator ACPL-330J, described capacitor C 44 other end ground connection;

Wherein, with the pin 1 of the described second photoisolator ACPL-330J, described resistance R 86 1 ends that pin 4 is electrically connected, also be used to feed back the fault message UF2 of described second insulated gate bipolar transistor.

Above-mentioned IGBT drive circuit provided by the invention comprises power circuit, first drive circuit and second drive circuit; Wherein, power circuit is used to produce the first via driving power and the second road driving power, and import first drive circuit and second drive circuit respectively, make first drive circuit under the driving of described first via driving power, export first via drive signal the one IGBT is driven; And make second drive circuit under the driving of described the second road driving power, export the second tunnel drive signal the 2nd IGBT is driven.As seen, above-mentioned IGBT drive circuit provided by the invention can produce the two-way driving power, is used for realizing two IGBT are driven, thereby helps the miniaturization of IGBT drive circuit and reduce cost.

In addition, in the above-mentioned IGBT drive circuit provided by the invention, first drive circuit comprises that also first protective circuit, second drive circuit also comprise second protective circuit; The collector emitter voltage VCE1 of a described IGBT who inserts when first protective circuit is during more than or equal to preset value, described first protective circuit is passed through pin 14 input high levels of the described first photoisolator ACPL-330J to the described first photoisolator ACPL-330J, the shutoff drive signal of the described IGBT of pin 11 outputs of the described first photoisolator ACPL-330J; The collector emitter voltage VCE2 of described the 2nd IGBT that inserts when second protective circuit is during more than or equal to preset value, described second protective circuit is passed through pin 14 input high levels of the described second photoisolator ACPL-330J to the described second photoisolator ACPL-330J, the shutoff drive signal of described the 2nd IGBT of pin 11 outputs of the described second photoisolator ACPL-330J; Thereby above-mentioned IGBT drive circuit provided by the invention can be realized the VCE defencive function to an IGBT, the 2nd IGBT.

Description of drawings

In order to be illustrated more clearly in technical scheme of the present invention, to do to introduce simply to the accompanying drawing of required use among the embodiment below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.

Fig. 1 is the structural representation of a kind of IGBT drive circuit provided by the invention;

The structural representation of the power circuit that Fig. 2 comprises for IGBT drive circuit shown in Figure 1;

The structural representation of first drive circuit that Fig. 3 comprises for IGBT drive circuit shown in Figure 1;

The structural representation of second drive circuit that Fig. 4 comprises for IGBT drive circuit shown in Figure 1;

Fig. 5 is the encapsulation schematic diagram of IGBT drive circuit shown in Figure 1.

Embodiment

Below in conjunction with accompanying drawing of the present invention, the technical scheme among the present invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.

The invention provides a kind of bipolar transistor driving circuit of insulated gate, this drive circuit can produce the two-way driving power, is used for realizing two IGBT are driven, thereby helps the miniaturization and the low cost of IGBT drive circuit.Disclosed drive circuit can be used for three-level inverter among the present invention, also can be used for the inverter module that other comprise a plurality of IGBT, and the present invention does not limit.

See also Fig. 1, Fig. 1 is the structural representation of a kind of IGBT drive circuit provided by the invention.As shown in Figure 1, this IGBT drive circuit can comprise:

Be used to produce the power circuit 100 of the first via driving power and the second road driving power, described power circuit 100 also is used for the described first via driving power and the second road driving power are imported first drive circuit 200 and second drive circuit 300 respectively;

Wherein, described first drive circuit 200 is used for output first via drive signal under the driving of described first via driving power, and described first via drive signal is used to drive an IGBT;

Described second drive circuit 300 is used for output the second tunnel drive signal under the driving of described the second road driving power, and described the second tunnel drive signal is used to drive the 2nd IGBT.

Above-mentioned IGBT drive circuit provided by the invention can produce the two-way driving power, is used for realizing two IGBT are driven, thereby helps the miniaturization of IGBT drive circuit and reduce cost.

See also Fig. 2, the structural representation of the power circuit 200 that Fig. 2 comprises for IGBT drive circuit shown in Figure 1.As shown in Figure 2, this power circuit 200 can comprise pulse-generating circuit 1, amplification treatment circuit 2, driving transformer 3, the first voltage multiplying rectifier filter circuit 4, the second voltage multiplying rectifier filter circuit 5, first via bleeder circuit 6 and No. the second bleeder circuit 7; Among the embodiment, driving transformer 3 can include but not limited to driving transformer UMS33D1T1 (V2,0).Because the structure and the function thereof of driving transformer are general knowledge known in those skilled in the art, so the present invention does not describe in detail herein.

Wherein, described pulse-generating circuit 1 is used to produce first via potential pulse, the second road potential pulse and exports described amplification treatment circuit 2 to;

Described amplification treatment circuit 2 is used for described first via potential pulse, the second road potential pulse are carried out respectively inputing to after the processing and amplifying the former limit of driving transformer 3;

Described driving transformer 3, be used for the first via potential pulse after the processing and amplifying and the second road potential pulse are carried out the transformation processing respectively, and described driving transformer 3 two-way secondary are exported first via drive voltage pulses to the first voltage multiplying rectifier filter circuit 4 respectively, and export the second tunnel drive voltage pulses to the second voltage multiplying rectifier filter circuit 5;

The described first voltage multiplying rectifier filter circuit 4, after being used for described first via drive voltage pulses carried out the voltage multiplying rectifier Filtering Processing, output first via driving voltage is to first via bleeder circuit 6;

Described first via bleeder circuit 6 is used for described first via driving voltage is carried out voltage division processing, obtains first via driving power and imports first drive circuit 200; Described first via driving power comprises the driving positive voltage, drives negative voltage and drives no-voltage;

The described second voltage multiplying rectifier filter circuit 5 after being used for described the second tunnel drive voltage pulses carried out the voltage multiplying rectifier Filtering Processing, is exported the second road driving voltage to No. the second bleeder circuit 7;

Described No. the second bleeder circuit 7 is used for described the second road driving voltage is carried out voltage division processing, obtains the second road driving power and imports second drive circuit 300; Described the second road driving power comprises the driving positive voltage, drives negative voltage and drives no-voltage.

As shown in Figure 2, among the embodiment, described pulse-generating circuit 1 can comprise resistance R 7, R10, capacitor C11, NAND gate A, B, C, D, constant voltage source and capacitor C4;

Wherein, described resistance R 7 one ends are electrically connected described NAND gate A input, and described resistance R 7 other ends are electrically connected described resistance R 10 1 ends; Described resistance R 10 other ends are electrically connected described NAND gate A output; And

Described NAND gate A output is electrically connected described NAND gate B input, and described NAND gate B output is electrically connected described NAND gate C input; Described capacitor C11 one end is electrically connected described resistance R 7 other ends, and the described capacitor C11 other end is electrically connected described NAND gate C input; Described NAND gate C output is electrically connected described NAND gate D input; Described NAND gate C output is electrically connected the first input end of described amplification treatment circuit, and described NAND gate D output is electrically connected second input of described amplification treatment circuit; And

Among the present invention, the general value of described constant voltage source is 15V, and certainly, described according to actual needs constant voltage source also can other magnitudes of voltage, and the present invention does not limit.

As shown in Figure 2, among the embodiment, described amplification treatment circuit 2 can comprise resistance R 1, resistance R 2, resistance R 3, resistance R 4, resistance R 5, resistance R 6, capacitor C1, capacitor C10, polar capacitor C9 and triode Q1～Q4;

Wherein, described resistance R 1 one ends are electrically connected described resistance R 3 one ends, and described resistance R 1 other end is electrically connected described resistance R 2 one ends; Described resistance R 2 other ends are electrically connected described resistance R 4 one ends; Described resistance R 4 other ends are electrically connected described resistance R 3 other ends;

The collector electrode of described triode Q2 (input signal is VR) is electrically connected described resistance R 4 other ends and described resistance R 3 other ends (output signal is VR); Described triode Q2 grid is electrically connected described resistance R 5 one ends, and described resistance R 5 other ends are electrically connected described NAND gate D output as second input of described amplification treatment circuit;

As shown in Figure 2, among the embodiment, the described first voltage multiplying rectifier filter circuit 4 can comprise: capacitor C2, rectifier diode D1, polar capacitor C12, polar capacitor C15, capacitor C5, capacitor C6;

Wherein, described capacitor C2 one end is electrically connected described driving transformer 3 first secondary one end points, and the described capacitor C2 other end is electrically connected described rectifier diode D1 second pin; Described rectifier diode D1 first pin is electrically connected another end points of described driving transformer 3 first secondary; Described polar capacitor C12 of series connection and described polar capacitor C15 between described rectifier diode D1 the 3rd pin, first pin; Described polar capacitor C12 goes up described capacitor C5 in parallel, and described polar capacitor C15 goes up described capacitor C6 in parallel;

As shown in Figure 2, among the embodiment, described first via bleeder circuit 6 can comprise: resistance R 11, resistance R 12 and voltage stabilizing didoe Z1;

Wherein, described resistance R 11, resistance R 12 are connected in parallel on the described capacitor C5, and described voltage stabilizing didoe Z1 is connected in parallel on the described capacitor C6;

The driving positive voltage VDD1 of the described resistance R 11 that is electrically connected with described rectifier diode D1 the 3rd pin, resistance R 12 1 ends output first via driving power is to described first via drive circuit 200; The driving no-voltage DRVO1-of the tie point output first via driving power between described resistance R 11, resistance R 12 and the described voltage stabilizing didoe Z1 is to described first via drive circuit 200; The driving negative voltage GND1 of the described voltage stabilizing didoe Z1 one end output first via driving power that is electrically connected with described rectifier diode D1 first pin is to described first via drive circuit 200.

As shown in Figure 2, among the embodiment, the described second voltage multiplying rectifier filter circuit 5 can comprise: capacitor C3, rectifier diode D2, polar capacitor C13, polar capacitor C14, capacitor C7, capacitor C8;

Wherein, described capacitor C3 one end is electrically connected described driving transformer 3 second secondary one end points, and the described capacitor C3 other end is electrically connected described rectifier diode D2 second pin; Described rectifier diode D2 first pin is electrically connected another end points of described driving transformer 3 second secondary; Described polar capacitor C13 of series connection and described polar capacitor C14 between described rectifier diode D2 the 3rd pin, first pin; Described polar capacitor C13 goes up described capacitor C7 in parallel, and described polar capacitor C14 goes up described capacitor C8 in parallel;

As shown in Figure 2, among the embodiment, described No. the second bleeder circuit 7 can comprise: resistance R 13, resistance R 14 and voltage stabilizing didoe Z2;

Wherein, described resistance R 13, resistance R 14 are connected in parallel on the described capacitor C7, and described voltage stabilizing didoe Z2 is connected in parallel on the described capacitor C8;

The driving positive voltage VDD2 that the described resistance R 13 that is electrically connected with described rectifier diode D2 the 3rd pin, resistance R 14 1 ends are exported the second road driving power is to described No. the second drive circuit 300; Tie point between described resistance R 13, resistance R 14 and the described voltage stabilizing didoe Z2 is exported the driving no-voltage DRVO2-of the second road driving power to described No. the second drive circuit 300; Described voltage stabilizing didoe Z2 one end that is electrically connected with described rectifier diode D2 first pin is exported the driving negative voltage GND2 of the second road driving power to described No. the second drive circuit 300.

Below, the operation principle of power circuit shown in Figure 2 100 is described:

NAND gate A, B, C, D constitute pulse-generating circuit 1 as switch paraphase device with resistance R 7, R10, capacitor C11.The basic functional principle of pulse-generating circuit 1 is to utilize discharging and recharging of capacitor C11, and when capacitor C11 charging voltage reached the threshold voltage VT of NAND gate, the NAND gate output state can change.Therefore, the first via potential pulse of pulse-generating circuit 1 generation, the waveform parameter of the second road potential pulse directly depend on the resistance in the pulse-generating circuit 1, the specification of capacitor.

Wherein, the first via potential pulse that pulse-generating circuit 1 produces is through triode Q1, after the processing and amplifying of Q3, strengthened the driven ability, and input driving transformer 3 former limits one end points, correspondingly, driving transformer 3 first secondary can produce corresponding first via drive voltage pulses, after the voltage multiplying rectifier filtering of first via drive voltage pulses through the first voltage multiplying rectifier filter circuit 4, can obtain the voltage of about 25V, again through after first bleeder circuit, 6 dividing potential drops, can obtain first driving power driving positive voltage VDD1 (+15V), drive negative voltage GND1 (10V) and drive no-voltage DRVO1-.

Wherein, the second road potential pulse that pulse-generating circuit 1 produces is through triode Q2, after the processing and amplifying of Q4, strengthened the driven ability, and input driving transformer 3 another end points of former limit, correspondingly, driving transformer 3 second secondary can produce corresponding the second tunnel drive voltage pulses, after the voltage multiplying rectifier filtering of the second tunnel drive voltage pulses through the second voltage multiplying rectifier filter circuit 5, can obtain the voltage of about 25V, again through after second bleeder circuit, 7 dividing potential drops, can obtain second driving power driving positive voltage VDD2 (+15V), drive negative voltage GND2 (10V) and drive no-voltage DRVO2-.

See also Fig. 3, the structural representation of first drive circuit 200 that Fig. 3 comprises for IGBT drive circuit shown in Figure 1.As described in Figure 3, this first drive circuit 200 can comprise that first drive circuit comprises the first photoisolator ACPL-330J, the internal logic structure of the first photoisolator ACPL-330J and each pin function all are that those skilled in the art are familiar with among the present invention, so the present invention does not give unnecessary details herein.

Wherein, the pin 9,10,12 of the described first photoisolator ACPL-330J is electrically connected described rectifier diode D1 first pin respectively, imports the driving negative voltage GND1 of described first via driving power respectively; The pin 2,3 of the described first photoisolator ACPL-330J is electrically connected described constant voltage source respectively;

The pin 13 of the described first photoisolator ACPL-330J is electrically connected described rectifier diode D1 the 3rd pin, is used to import the driving positive voltage VDD1 of described first via driving power; Series capacitor C17 between the pin 13 of the described first photoisolator ACPL-330J and the pin 12; The pin 16 of the described first photoisolator ACPL-330J is electrically connected the tie point between described resistance R 11, resistance R 12 and the described voltage stabilizing didoe Z1, is used to import the driving no-voltage DRVO1-of described first via driving power; Series capacitor C21 between the pin 16 of the described first photoisolator ACPL-330J and the pin 12, series capacitor C20 between the pin 16 of the described first photoisolator ACPL-330J and the pin 13;

The pin 11 of the described first photoisolator ACPL-330J is used to export first via drive signal DRVO1+ a described IGBT is driven.

As shown in Figure 3, among the embodiment, described first drive circuit 200 can also comprise first protective circuit 8, and described first protective circuit 8 can comprise capacitor C22, diode D4, resistance 8, resistance 9, diode D3 and diode D5;

Described diode D3 negative pole, also be used to insert the collector emitter voltage VCE1 of a described IGBT, as described VCE1 during more than or equal to preset value, described first protective circuit 8 can be passed through pin 14 input high levels of the described first photoisolator ACPL-330J to the described first photoisolator ACPL-330J, the described first via drive signal DRVO1+ of pin 11 outputs of the described first photoisolator ACPL-330J realizes the shutoff to an IGBT for turn-offing drive signal; As described VCE1 during less than preset value; described first protective circuit 8 can be passed through pin 14 input low levels of the described first photoisolator ACPL-330J to the described first photoisolator ACPL-330J; the described first via drive signal DRVO1+ of pin 11 outputs of the described first photoisolator ACPL-330J realizes the conducting to an IGBT for opening drive signal.

As shown in Figure 3, among the embodiment, described first drive circuit 200 can also comprise the first fault feedback circuit 9, and the described first fault feedback circuit 9 can comprise resistance R 19 and capacitor C23;

Wherein, with the pin 1 of the described first photoisolator ACPL-330J, described resistance R 19 1 ends that pin 4 is electrically connected, also be used to feed back the fault message UF1 of a described IGBT.

Among the present invention; can feed back the fault message UF1 of a described IGBT to control board with the pin 1 of the described first photoisolator ACPL-330J, described resistance R 19 1 ends that pin 4 is electrically connected; block light pulse signal output by control board; make pin 6, the pin 7 of the photoisolator ACPL-330J that wins be input as low level; thereby the pin 11 of the first photoisolator ACPL-330J can be exported the shutoff drive signal; be used to drive an IGBT and turn-off, thereby realize the VCE1 of an IGBT is protected fast.

Below, the operation principle of first drive circuit 200 shown in Figure 3 is described:

1, when light pulse signal DRV1 be timing (this state be called drive effectively), light pulse signal DRV1 is after the isolation and internal logic processing of the first photoisolator ACPL-330J, pin 11 output one high level (with reference to the DRVO1-point) from the first photoisolator ACPL-330J, this high level is as the drive signal of opening of an IGBT, and at this moment VCE1 is a low level.Wherein, during the one IGBT operate as normal, power supply VCE1 can be less than described preset value (for example preset value can be 3.4V) between its collector electrode-emitter, and when an IGBT breaks down (as short circuit), power supply VCE1 can be more than or equal to described preset value between its collector electrode-emitter, this determines by an IGBT characteristic, is the known general knowledge of those skilled in the art, and the present invention does not describe in detail.

2, when light pulse signal DRV1 (this state be called drive invalid) when negative, the pin 11 of the first photoisolator ACPL-330J will be exported a low level (with reference to the DRVO1-point), this low level is as the shutoff drive signal of an IGBT, and at this moment VCE1 still is a low level.

3, when an IGBT breaks down (as short circuit), at this moment light pulse signal DRV1 is for just, VCE1 is a high level simultaneously, diode D3 becomes from conducting and ends, VDD1 can locate to form a high level at the pin 14 (fault detect pin DESAT) of the first photoisolator ACPL-330J after resistance R 8, R9 effect, after the internal logic of the first photoisolator ACPL-330J is handled, automatically shut down the output of its pin 11, be about to pin 11 outputs and become low level, thereby turn-off an IGBT.

4, the first photoisolator ACPL-330J becomes the low level while in the output with its pin 11; can also the fault message UF1 (UF1 is a high level) of an IGBT be fed back to control board by the first fault feedback circuit 9; make control board block light pulse signal output, thereby realize the VCE1 of an IGBT is protected fast.

Among the present invention, can appropriate design R8, the R9 size, make VDD1 locate to form a low level at the pin 14 (fault detect pin DESAT) of the first photoisolator ACPL-330J, this low level is after the internal logic of the first photoisolator ACPL-330J is handled, its pin 11 output high level, thus drive an IGBT.

Among the present invention; can appropriate design voltage stabilizing didoe D3 size; when an IGBT breaks down; VCE1 is during more than or equal to preset value; D3 ends; make VDD1 locate to form a high level, thereby when an IGBT breaks down, can turn-off an IGBT, realize the VCE1 protection of an IGBT at the pin 14 (fault detect pin DESAT) of the first photoisolator ACPL-330J.

See also Fig. 4, the structural representation of second drive circuit 300 that Fig. 4 comprises for IGBT drive circuit shown in Figure 1.As described in Figure 4, this second drive circuit 300 can comprise the second photoisolator ACPL-330J; The internal logic structure of the second photoisolator ACPL-330J and each pin function are all identical with the first photoisolator ACPL-330J among the present invention, and all are that those skilled in the art are familiar with, so the present invention does not give unnecessary details herein.

Wherein, the pin 9,10,12 of the described second photoisolator ACPL-330J is electrically connected described rectifier diode D2 first pin respectively, imports the driving negative voltage GND2 of described the second road driving power respectively; The pin 2,3 of the described second photoisolator ACPL-330J is electrically connected described constant voltage source respectively; The pin 13 of the described second photoisolator ACPL-330J is electrically connected described rectifier diode D2 the 3rd pin, is used to import the driving positive voltage VDD2 of described the second road driving power; Series capacitor C16 between the pin 13 of the described second photoisolator ACPL-330J and the pin 12; The pin 16 of the described second photoisolator ACPL-330J is electrically connected the tie point between described resistance R 13, resistance R 14 and the described voltage stabilizing didoe Z2, is used to import the driving no-voltage DRVO2-of described the second road driving power; Series capacitor C19 between the pin 16 of the described second photoisolator ACPL-330J and the pin 12, series capacitor C18 between the pin 16 of the described second photoisolator ACPL-330J and the pin 13;

The pin 11 of the described second photoisolator ACPL-330J is used to export the second tunnel drive signal DRVO2+ described the 2nd IGBT is driven.

As shown in Figure 4, among the embodiment, described second drive circuit 300 can also comprise second protective circuit 10, and described second protective circuit 10 can comprise capacitor C25, diode D8, resistance 17, resistance 18, diode D7 and diode D9;

Described diode D7 negative pole, also be used to insert the collector emitter voltage VCE2 of described the 2nd IGBT, as described VCE2 during more than or equal to preset value, described second protective circuit 10 can be passed through pin 14 input high levels of the described second photoisolator ACPL-330J to the described second photoisolator ACPL-330J, and described the second tunnel drive signal DRVO2+ of pin 11 outputs of the described second photoisolator ACPL-330J is for turn-offing drive signal; As described VCE2 during less than preset value; described second protective circuit 10 can be passed through pin 14 input low levels of the described second photoisolator ACPL-330J to the described second photoisolator ACPL-330J, and described the second tunnel drive signal DRVO2+ of pin 11 outputs of the described second photoisolator ACPL-330J is for opening drive signal.

As shown in Figure 4, among the embodiment, described second drive circuit 300 can also comprise the second fault feedback circuit 11, and the described second fault feedback circuit 11 can comprise resistance R 86 and capacitor C44;

Wherein, with the pin 1 of the described second photoisolator ACPL-330J, described resistance R 86 1 ends that pin 4 is electrically connected, also be used to feed back the fault message UF2 of described the 2nd IGBT.

Among the present invention; can feed back the fault message UF2 of described the 2nd IGBT to control board with the pin 1 of the described second photoisolator ACPL-330J, described resistance R 86 1 ends that pin 4 is electrically connected; block light pulse signal output by control board; make pin 6, the pin 7 of the second photoisolator ACPL-330J be input as low level; thereby the pin 11 of the second photoisolator ACPL-330J can be exported the shutoff drive signal; be used to drive the 2nd IGBT and turn-off, thereby realize the VCE2 of the 2nd IGBT is protected fast.

Among the present invention, the operation principle of second drive circuit 300 is identical with the operation principle of first drive circuit 200, and the present invention does not give unnecessary details herein.

Among the present invention, can appropriate design R17, the R18 size, make VDD2 locate to form a low level at the pin 14 (fault detect pin DESAT) of the second photoisolator ACPL-330J, this low level is after the internal logic of the second photoisolator ACPL-330J is handled, its pin 11 output high level, thus drive the 2nd IGBT.

Among the present invention; can appropriate design voltage stabilizing didoe D7 size; when the 2nd IGBT breaks down; VCE2 is during more than or equal to preset value; D7 ends; make VDD2 locate to form a high level, thereby when the 2nd IGBT breaks down, can turn-off the 2nd IGBT, realize the VCE2 protection of the 2nd IGBT at the pin 14 (fault detect pin DESAT) of the second photoisolator ACPL-330J.

Among the present invention, the effect of diode D3, D7 is to be respectively applied for the protection threshold values that VCE1, VCE2 are set, and can make an IGBT, the 2nd IGBT reliably working by rational protection threshold values is set.

IGBT drive circuit provided by the invention possesses following advantage:

1, drive circuit adopts ACPL-330 as the core driving element; ACPL-330J has lower transmission delay; lower transmission distortion; driving force is more intense, and operating temperature range is wide, and antijamming capability is strong; drive circuit is integrated VCE defencive function; integrated fault feedback circuit of while, the integrated level height can make the veneer volume reduce.

2, drive circuit adopts single constant voltage source power supply, has reduced the quantity of accessory power supply winding, makes that the design of accessory power supply can be simple and reliable, makes things convenient for printed circuit board (Printed Circuit Board, PCB) cabling simultaneously.

3, drive circuit favorable expandability when needs drive big capacity IGBT, can increase the one-level amplifying triodes at ACPL-330 pin 11 as required, be used to drive jumbo IGBT, IGBT capacity difference certainly, and the selection of amplifying triode is also just different.

4, the VCE protective circuit increases diode (as D3, D7); and the short-circuit protection voltage of ACPL-330J is 6.5V; the pressure drop that deducts diode just can obtain IGBT protection threshold value; according to the IGBT difference; can increase the quantity of diode at the input of VCE; determine IGBT protection threshold value, threshold value determines that principle is 5 times a VCE voltage.

5, drive circuit can adopt modularized design, has been designed to a general little PCB and has driven platelet, and interface is drawn with contact pin, as shown in Figure 5.It is very near to make that the line of drive circuit and IGBT is walked, and has reduced interference, and has reduced the volume of veneer, improves versatility.

Driving voltage is below 1200V effectively for IGBT drive circuit provided by the invention, and the IGBT of electric current below 500A has Vce defencive function and stronger antijamming capability simultaneously.In addition, IGBT drive circuit provided by the invention can be arranged to a general little pcb board or a thick film circuit, thereby the versatility of product can be provided.

In addition, in present power electronic equipment, as frequency converter, wind-powered electricity generation, photovoltaic, UPS etc., a lot of products adopt three level IGBT modules as inverter switch device, because three-level inverter comprises 12 IGBT and clamp diode and forms the neutral point clamp circuit, each IGBT needs independently driving power and chip for driving, and this all brings difficulty to IGBT driving and layout thereof, wiring.If in three-level inverter, use the disclosed IGBT drive circuit of the present invention, because sort circuit can produce the two-way driving power, can drive two IGBT, two such drive circuits just can drive three level modules.By modularized design, can solve the deficiency that three level module drive place and routes exist in addition, can improve product development efficiency and reduce the product maintenance cost circuit.

More than a kind of bipolar transistor driving circuit of insulated gate provided by the present invention is described in detail, used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.

Claims

1. a bipolar transistor driving circuit of insulated gate is characterized in that, comprising:

2. drive circuit according to claim 1 is characterized in that, described power circuit comprises:

Pulse-generating circuit is used to produce the first via potential pulse and the second road potential pulse, and inputs to amplification treatment circuit;

3. drive circuit according to claim 2 is characterized in that, described pulse-generating circuit comprises:

Resistance R 7, resistance R 10, capacitor C11, NAND gate A, B, C, D, constant voltage source and capacitor C4;

4. drive circuit according to claim 3 is characterized in that, described amplification treatment circuit comprises:

The collector electrode of described triode Q2 is electrically connected described resistance R 4 other ends and described resistance R 3 other ends; Described triode Q2 grid is electrically connected described resistance R 5 one ends, and described resistance R 5 other ends are electrically connected the output of described NAND gate D as second input of described amplification treatment circuit;

Described triode Q2 grid also is electrically connected described triode Q4 grid, and described triode Q2 emitter is electrically connected described triode Q4 emitter, described triode Q4 grounded collector; Described triode Q2 emitter, described triode Q4 emitter are electrically connected described capacitor C10 respectively and between another end points of former limit of described driving transformer.

5. according to claim 3 or 4 described drive circuits, it is characterized in that,

The described first voltage multiplying rectifier filter circuit comprises: capacitor C2, rectifier diode D1, polar capacitor C12, polar capacitor C15, capacitor C5, capacitor C6;

6. drive circuit according to claim 5 is characterized in that,

Described first drive circuit comprises the first photoisolator ACPL-330J;

7. drive circuit according to claim 6 is characterized in that, described first drive circuit also comprises first protective circuit, and described first protective circuit comprises capacitor C22, diode D4, resistance 8, resistance 9, diode D3 and diode D5;

Described resistance R 8 one ends are electrically connected the pin 14 of the described first photoisolator ACPL-330J, described resistance R 8 other ends are electrically connected described resistance R 9 one ends and described diode D3 positive pole respectively, described resistance R 9 other ends are electrically connected the pin 13 of the described first photoisolator ACPL-330J, described diode D3 negative electricity connects described diode D5 positive pole, and described diode D5 negative electricity connects the pin 13 of the described first photoisolator ACPL-330J;

8. drive circuit according to claim 7 is characterized in that, described first drive circuit also comprises the first fault feedback circuit, and the described first fault feedback circuit comprises resistance R 19 and capacitor C23;

Wherein, described resistance R 19 1 ends are electrically connected pin 1, the pin 4 of the described first photoisolator ACPL-330J respectively, described resistance R 19 other end ground connection; Described capacitor C23 one end is electrically connected pin 1, the pin 4 of the described first photoisolator ACPL-330J respectively, described capacitor C23 other end ground connection;

9. according to claim 3 or 4 described drive circuits, it is characterized in that,

The described second voltage multiplying rectifier filter circuit comprises: capacitor C3, rectifier diode D2, polar capacitor C13, polar capacitor C14, capacitor C7, capacitor C8;

Described capacitor C3 one end is electrically connected described driving transformer second secondary one end points, and the described capacitor C3 other end is electrically connected described rectifier diode D2 second pin; Described rectifier diode D2 first pin is electrically connected described another end points of driving transformer second secondary; Described polar capacitor C13 of series connection and described polar capacitor C14 between described rectifier diode D2 the 3rd pin, first pin; Described polar capacitor C13 goes up described capacitor C7 in parallel, and described polar capacitor C14 goes up described capacitor C8 in parallel;

10. drive circuit according to claim 9 is characterized in that,

Described second drive circuit comprises the second photoisolator ACPL-330J;

11. drive circuit according to claim 10 is characterized in that, described second drive circuit also comprises second protective circuit, and described second protective circuit comprises capacitor C25, diode D8, resistance 17, resistance 18, diode D7 and diode D9;

Described resistance R 17 1 ends are electrically connected the pin 14 of the described second photoisolator ACPL-330J, described resistance R 17 other ends are electrically connected described resistance R 18 1 ends and described diode D7 positive pole respectively, described resistance R 18 other ends are electrically connected the pin 13 of the described second photoisolator ACPL-330J, described diode D7 negative electricity connects described diode D9 positive pole, and described diode D9 negative electricity connects the pin 13 of the described second photoisolator ACPL-330J;

12. drive circuit according to claim 11 is characterized in that, described second drive circuit also comprises the second fault feedback circuit, and the described second fault feedback circuit comprises resistance R 86 and capacitor C44;