CN113364251A - Drive circuit, power module and electrical equipment - Google Patents

Drive circuit, power module and electrical equipment Download PDF

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Publication number
CN113364251A
CN113364251A CN202010137686.4A CN202010137686A CN113364251A CN 113364251 A CN113364251 A CN 113364251A CN 202010137686 A CN202010137686 A CN 202010137686A CN 113364251 A CN113364251 A CN 113364251A
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China
Prior art keywords
driving
circuit
sub
control
power module
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CN202010137686.4A
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Chinese (zh)
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兰昊
冯宇翔
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Midea Group Co Ltd
Guangdong Midea White Goods Technology Innovation Center Co Ltd
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Midea Group Co Ltd
Guangdong Midea White Goods Technology Innovation Center Co Ltd
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Priority to CN202010137686.4A priority Critical patent/CN113364251A/en
Publication of CN113364251A publication Critical patent/CN113364251A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention discloses a drive circuit, a power module and electrical equipment, wherein the drive circuit comprises: the control circuit and at least two parallel driving sub-circuits; the control circuit is used for receiving control signals, wherein the control signals comprise control sub-signals corresponding to each driving sub-circuit, and the control sub-signals are output to the corresponding driving sub-circuits so as to control the driving sub-circuits to be switched on or switched off; and the driving sub-circuit is used for switching on and providing driving current to the power device of the intelligent power module according to the received control sub-signal. In the invention, the driving sub-circuits can be freely combined to provide combined driving capability and various driving capabilities, so that the charging and discharging speeds of the power device can be respectively adjusted, a high-performance driving mode of the intelligent power module can be realized, a grid driving resistor is not required to be used, the number of packaging components and packaging procedures of the intelligent power module are reduced, and the packaging difficulty is reduced.

Description

Drive circuit, power module and electrical equipment
Technical Field
The invention belongs to the technical field of intelligent power modules, and particularly relates to a high-voltage driving circuit, a power module and electrical equipment.
Background
IPM (Intelligent Power Module) is a Power-driven product combining Power electronics and integrated circuit technology. IPM integrates a power switching device and a high-voltage driving circuit, and has a fault detection circuit for overvoltage, overcurrent, and overheat. The IPM receives a Control signal of an MCU (Micro Control Unit) to drive a subsequent circuit to operate, and sends a detected state signal of the system to the MCU. The IPM plays an important role in the field of energy management, which is difficult to reach by other integrated circuits, is particularly suitable for a frequency converter for driving a motor and various inverter power supplies, and is an ideal power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances.
In the related art, as shown in fig. 1, a schematic diagram of a High Voltage Integrated Circuit (HVIC) driving power device in an IPM is shown. In the figure, other functions of the high voltage driving IC 100 are not shown, and usually, when it drives the power device 104, a gate driving resistor 103 is required to be connected in series for adjusting the driving efficiency. The driving output portion of the high voltage driving IC 100 is composed of a set of PMOS Transistor 101 and NMOS Transistor 102, and the signal is provided from the input end, wherein the PMOS Transistor determines the charging current of the power device, and the NMOS Transistor determines the discharging current of the power device, such as an IGBT (Insulated Gate Bipolar Transistor). However, the existing IPM has the following problems:
1. for a three-phase inverted IPM, there are six gate resistors 103, which exist: a) the layout difficulty and size of the IPM are increased; b) the number of IPM packaging components is large, and packaging procedures and difficulty are increased.
2. The charging and discharging of the power device 104 need to pass through the gate driving resistor 103, which is poor in flexibility, not beneficial to realizing the optimal driving mode, and not beneficial to optimizing the power loss of the IPM. For example, since the resistances of the charging loop and the discharging loop of the gate of the IGBT are the same, it is difficult for the gate resistance to simultaneously satisfy different requirements of the IGBT on and off processes for the resistance of the gate resistance.
Disclosure of Invention
The object of the present invention is to solve at least one of the technical drawbacks mentioned above.
In order to solve the above problem, a driving circuit according to an embodiment of a first aspect of the present invention includes: the control circuit and at least two parallel driving sub-circuits; wherein the content of the first and second substances,
the control circuit is used for receiving control signals, wherein the control signals comprise control sub-signals corresponding to each driving sub-circuit, and the control sub-signals are output to the corresponding driving sub-circuits so as to control the driving sub-circuits to be switched on or switched off;
and the driving sub-circuit is used for switching on and providing driving current to the power device of the intelligent power module according to the received control sub-signal.
According to the drive circuit disclosed by the embodiment of the first aspect of the invention, the drive sub-circuits can be freely combined, the combined drive capability is provided, and the realization of different drive capabilities is realized, so that a high-voltage drive circuit does not need a drive resistor when driving a power device part, thereby reducing the layout difficulty and size of the IPM, reducing the number of IPM packaging components, reducing the packaging process and reducing the packaging difficulty. Furthermore, due to the multiple driving capabilities, the charging and discharging speeds of the power device can be adjusted respectively, and the IPM high-performance driving mode can be realized.
In some embodiments of the present invention, a power input terminal of each of the driving sub-circuits is connected to a positive power terminal of the intelligent power module, a power output terminal of each of the driving sub-circuits is connected to a negative power terminal of the intelligent power module, and a current output terminal of each of the driving sub-circuits is respectively connected to a power device of the intelligent power module.
In some embodiments of the present invention, the output terminal of the control circuit is connected to the control terminal of each of the driving sub-circuits.
In some embodiments of the present invention, an input terminal of the control circuit is connected to a signal source of the smart power module, and the control signal is sent by the signal source of the smart power module.
In some embodiments of the present invention, the driving sub-circuit includes a PMOS driving transistor and an NMOS driving transistor.
In some embodiments of the present invention, the gate of the PMOS driving transistor and the gate of the NMOS driving transistor are connected to serve as the control terminal of the driving sub-circuit; the source electrode of the PMOS driving tube and the drain electrode of the NMOS driving tube are connected and used as the current output end of the driving sub-circuit; the drain electrode of the PMOS driving tube is used as the power supply input end of the driving sub-circuit, and the source electrode of the NMOS driving tube is used as the power supply output end of the driving sub-circuit.
A power module according to an embodiment of the second aspect of the present invention includes the driving circuit in the first aspect.
In the power module according to the embodiment of the second aspect of the present invention, the driving sub-circuits in the driving circuit can be freely combined to provide combined driving capability, and the realization of different driving capabilities makes the high-voltage driving circuit not need to drive a resistor when driving the power device portion, which reduces the layout difficulty and size of IPM, reduces the number of IPM packaged components, reduces the packaging process, and reduces the packaging difficulty. Furthermore, due to the multiple driving capabilities, the charging and discharging speeds of the power device can be adjusted respectively, and the IPM high-performance driving mode can be realized.
An electrical device according to an embodiment of the third aspect of the present invention includes the power module of the second aspect.
In the electrical equipment according to the third aspect of the present invention, the driving sub-circuits of the driving circuit in the power module may be freely combined to provide combined driving capability, and implementation of different driving capabilities makes the high voltage driving circuit not need to drive a resistor when driving the power device, which reduces layout difficulty and size of IPM, reduces the number of IPM packaged components, reduces packaging processes, and reduces packaging difficulty. Furthermore, due to the multiple driving capabilities, the charging and discharging speeds of the power device can be adjusted respectively, and the IPM high-performance driving mode can be realized.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic diagram of a high-voltage driving circuit driving a power device in a conventional intelligent power module;
FIG. 2 shows a schematic diagram of a drive circuit of the present invention;
fig. 3 shows a schematic diagram of a driving circuit of a power module according to the invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The principle of the invention is as follows: the invention provides a novel high-voltage driving circuit of an intelligent power module IPM, wherein a plurality of driving sub-circuits can be freely combined, the combined driving capability is provided, and the realization of different driving capabilities is realized, so that the high-voltage driving circuit does not need a driving resistor (or a grid resistor) when driving a power device part. Because a large number of driving resistors are reduced, the layout difficulty and the size of the IPM are reduced, and the number of IPM packaging components is also reduced, so that the packaging procedures can be reduced, and the packaging difficulty is reduced. Furthermore, due to the multiple driving capabilities, the charging and discharging speeds of the power device can be adjusted respectively, and the IPM high-performance driving mode can be realized.
Example 1
As shown in fig. 2, a driving circuit 200 of the present invention includes: a control circuit 10 and at least two parallel drive sub-circuits 20.
The control circuit 10 is configured to receive a control signal, where the control signal includes a control sub-signal corresponding to each driving sub-circuit 20, and output the control sub-signal to the corresponding driving sub-circuit to control the corresponding driving sub-circuit to be turned on or turned off;
the driving sub-circuit 20 is configured to turn on and supply a driving current to the power device 30 of the IPM according to the received control sub-signal, or turn off and not supply the driving current according to the received control sub-signal.
FIG. 3 illustrates a schematic diagram of a power module driver circuit of the present invention; as shown in fig. 3, each drive sub-circuit 20 comprises a power input terminal 201, a power output terminal 202, a current output terminal 203 and a control terminal 204. The power input terminal 201 of each driver sub-circuit 20 is connected to the positive power supply terminal (V) of the IPMBXor Vcc), the power supply output terminal 202 of each drive sub-circuit 20 is connected to the power supply negative terminal (V) of the IPMSXor COM), the current output terminal 203 of each driving sub-circuit 20 is connected to the power device 30 of the IPM, specifically to the gate of the power device 30.
In practical applications, the driving sub-circuit 20 may be composed of a PMOS driving transistor and an NMOS driving transistor, as shown in fig. 3, the PMOS driving transistor 211, the PMOS driving transistor 212, the PMOS driving transistor 213, the PMOS driving transistor 214, the NMOS driving transistor 221, the NMOS driving transistor 222, the NMOS driving transistor 223, and the NMOS driving transistor 224, the PMOS transistor determines the magnitude of the charging current of the power device, and the NMOS transistor determines the magnitude of the discharging current of the power device. The grid electrode of the PMOS driving tube and the grid electrode of the NMOS driving tube are connected and used as the control end 204 of the driving sub-circuit; the source electrode of the PMOS driving tube is connected with the drain electrode of the NMOS driving tube and is used as a current output end 203 of the driving sub-circuit; the drain of the PMOS driver transistor serves as the power input terminal 201 of the driver sub-circuit, and the source of the NMOS driver transistor serves as the power output terminal 202 of the driver sub-circuit. The driving capability of the multiple groups of driving tubes can be designed according to actual conditions, and the combination modes (number) of the PMOS driving tubes and the NMOS driving tubes can be different.
The output of the control circuit 10 is connected to the control terminal 204 of each of the drive sub-circuits 20. The input terminal of the control circuit 10 is connected to the signal source of the IPM, and the control signal is sent by the signal source of the IPM, and the control signal is the high voltage input HINx or the low voltage input LINx as shown in fig. 3.
The operating principle of the driving circuit shown in fig. 3 is as follows: the multiple groups of driving tubes can be freely combined to provide combined driving capability. In the process of turning on the power device 30, the control circuit 10 receives a control signal sent by the signal source of the IPM, where the control signal includes a control sub-signal for controlling whether each PMOS driving transistor is turned on, and the driving current of each turned on PMOS driving transistor constitutes the charging current of the power device 30. In the turn-off process of the power device 30, the control circuit 10 receives a control signal sent by the signal source of the IPM, where the control signal includes a control sub-signal for controlling whether each NMOS driving transistor is turned on, and the driving current of each turned-on NMOS driving transistor constitutes the discharging current of the power device 30.
The power device 30 may be an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), or the like.
According to the high-voltage driving circuit, the driving sub-circuits can be freely combined, the combined driving capability is provided, and the realization of different driving capabilities is realized, so that the high-voltage driving circuit does not need to drive a resistor when driving a power device part, the layout difficulty and the size of the IPM are reduced, the number of IPM packaging components is also reduced, the packaging process is reduced, and the packaging difficulty is reduced. Furthermore, due to the multiple driving capabilities, the charging and discharging speeds of the power device can be adjusted respectively, and the IPM high-performance driving mode can be realized.
Example 2
The driving capability and the number of the driving sub-circuits may be designed according to actual situations, and the high voltage driving circuit of the intelligent power module IPM according to another embodiment of the present invention includes:
the first drive sub-circuit comprises a first PMOS drive tube and a first NMOS drive tube;
the second driving sub-circuit comprises a second PMOS driving tube and a second NMOS driving tube;
the third driving sub-circuit comprises a third PMOS driving tube and a third NMOS driving tube;
the fourth driver sub-circuit comprises a fourth PMOS driving tube and a fourth NMOS driving tube;
the driving current of the first PMOS driving tube is a first current value, the driving currents of the second PMOS driving tube and the third PMOS driving tube are 2 times of the first current value, and the driving current of the fourth PMOS driving tube is 5 times of the first current value;
the drive current of the first NMOS drive tube is a second current value, the drive currents of the second NMOS drive tube and the third NMOS drive tube are 2 times of the second current value, and the drive current of the fourth NMOS drive tube is 5 times of the second current value.
In practical application, fig. 1 is a driving schematic diagram of a conventional high voltage driving IC. The driving part of the driving circuit is generally composed of a group of PMOS driving tubes and NMOS driving tubes. The typical driving current of the PMOS driving tube is 200mA, and the typical driving current of the NMOS driving tube is 350 mA.
Fig. 3 is a schematic diagram of a driving circuit of a power module according to the present invention, and the driving structure includes: a PMOS driving tube 211, a PMOS driving tube 212, a PMOS driving tube 213, a PMOS driving tube 214, an NMOS driving tube 221, an NMOS driving tube 222, an NMOS driving tube 223 and an NMOS driving tube 224;
it can be divided into four groups of drive tubes:
group A: a PMOS driving tube 211 and an NMOS driving tube 221;
group B: PMOS drive tube 212 and NMOS drive tube 222;
group C: PMOS drive tube 213 and NMOS drive tube 223;
group D: a PMOS drive tube 214 and an NMOS drive tube 224;
based on the group A, the typical driving current of the PMOS driving transistor 211 is 20mA, and the typical driving current of the NMOS driving transistor 221 is 35 mA. Current capacity of group B and group C is 2 times that of group a, and group D is 5 times that of group a. Then, the four groups of driving tubes can be combined to be 1-10 times of the typical driving energy of the PMOS driving tubes; the typical drive capability of the NMOS drive tube is 1-10 times of 35 mA.
In this embodiment, one set of driving tubes is adjusted to four sets of driving tubes. The four groups of driving tubes can realize various driving capacities, and the driving capacity in fig. 1 can also be realized, namely, the function of a grid driving resistor is replaced.
Of course, one set of driving pipes can be adjusted to three sets of driving pipes according to actual conditions. For example, the high voltage driving circuit of the intelligent power module IPM according to another embodiment of the present invention includes:
the fifth driving sub-circuit comprises a fifth PMOS driving tube and a fifth NMOS driving tube;
the sixth driving sub-circuit comprises a sixth PMOS driving tube and a sixth NMOS driving tube;
the seventh driving sub-circuit comprises a seventh PMOS driving tube and a seventh NMOS driving tube;
the driving currents of the fifth PMOS driving tube and the sixth PMOS driving tube are both a third current value, and the driving current of the seventh PMOS driving tube is 3 times of the third current value;
the drive currents of the fifth NMOS drive tube and the sixth NMOS drive tube are both a fourth current value, and the drive current of the seventh NMOS drive tube is 3 times of the fourth current value
In addition, in the above three groups of A, B, C examples in the grouped driving tubes, the typical driving current of the PMOS driving tube is 40mA, and the typical driving current of the NMOS driving tube 221 is 70mA, based on the group a; the current capability of group B is the same as that of group A, and group C is 3 times that of group A. The three groups can be combined to be 1-5 times of the typical driving energy of the PMOS driving tube; the typical driving capability of the NMOS driving tube is 1-5 times of 70 mA.
In this embodiment, the driving capability in fig. 1 can be realized by adjusting one group of driving tubes to three groups of driving tubes, and can also realize various driving capabilities, and can also replace the function of the gate driving resistor.
Example 3
A power module according to another embodiment of the present invention includes the driving circuit in each of the above embodiments.
In some embodiments of the invention, the power module may further include a power device;
the driving circuit is connected with the power device and used for conducting on-off driving on the power device.
Specifically, the power device is an IGBT switch tube or an MOSFET switch tube.
According to the power module provided by the embodiment of the invention, the driving sub-circuits in the high-voltage driving circuit can be freely combined, the combined driving capability is provided, and the realization of different driving capabilities is realized, so that the high-voltage driving circuit does not need to drive a resistor when driving a power device part, the layout difficulty and the size of IPM are reduced, the number of IPM packaging components is also reduced, the packaging process is reduced, and the packaging difficulty is reduced. Furthermore, due to the multiple driving capabilities, the charging and discharging speeds of the power device can be adjusted respectively, and the IPM high-performance driving mode can be realized.
An electrical device according to another embodiment of the present invention includes the power module in the above embodiment.
According to the electric equipment provided by the embodiment of the invention, the driving sub-circuits of the driving circuit in the power module can be freely combined, the combined driving capability is provided, and the realization of different driving capabilities is realized, so that a high-voltage driving circuit does not need to drive a resistor when driving a power device part, the layout difficulty and the size of IPM are reduced, the number of IPM packaging components is also reduced, the packaging process is reduced, and the packaging difficulty is reduced. Furthermore, due to the multiple driving capabilities, the charging and discharging speeds of the power device can be adjusted respectively, and the IPM high-performance driving mode can be realized.
It should be noted that:
the algorithms and displays presented herein are not inherently related to any particular computer, virtual machine, or other apparatus. Various general purpose devices may be used with the teachings herein. The required structure for constructing such a device will be apparent from the description above. In addition, this application is not directed to any particular programming language. It will be appreciated that a variety of programming languages may be used to implement the teachings of the present application as described herein, and any descriptions of specific languages are provided above to disclose the best modes of the present application.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the application, various features of the application are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the application and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be interpreted as reflecting an intention that: this application is intended to cover such departures from the present disclosure as come within known or customary practice in the art to which this invention pertains. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this application.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the application and form different embodiments. For example, in the following claims, any of the claimed embodiments may be used in any combination.
The various component embodiments of the present application may be implemented in hardware, or in software modules running on one or more processors, or in a combination thereof. Those skilled in the art will appreciate that a microprocessor or Digital Signal Processor (DSP) may be used in practice to implement some or all of the functions of some or all of the components in the creation apparatus of a virtual machine according to embodiments of the present application. The present application may also be embodied as apparatus or device programs (e.g., computer programs and computer program products) for performing a portion or all of the methods described herein. Such programs implementing the present application may be stored on a computer readable medium or may be in the form of one or more signals. Such a signal may be downloaded from an internet website or provided on a carrier signal or in any other form.
It should be noted that the above-mentioned embodiments illustrate rather than limit the application, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.
The above description is only for the preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. A driving circuit is characterized by comprising a control circuit and at least two parallel driving sub-circuits; wherein the content of the first and second substances,
the control circuit is used for receiving control signals, wherein the control signals comprise control sub-signals corresponding to each driving sub-circuit, and the control sub-signals are output to the corresponding driving sub-circuits so as to control the driving sub-circuits to be switched on or switched off;
and the driving sub-circuit is used for switching on and providing driving current to the power device of the intelligent power module according to the received control sub-signal.
2. The drive circuit according to claim 1,
the power input end of each driving sub-circuit is connected to the positive power end of the intelligent power module, the power output end of each driving sub-circuit is connected to the negative power end of the intelligent power module, and the current output end of each driving sub-circuit is connected with the power device of the intelligent power module respectively.
3. The drive circuit according to claim 2,
and the output end of the control circuit is respectively connected with the control end of each driving sub-circuit.
4. The drive circuit according to claim 3,
the input end of the control circuit is connected with a signal source of the intelligent power module, and the control signal is sent by the signal source of the intelligent power module.
5. The drive circuit according to claim 3,
the driving sub-circuit comprises a PMOS driving tube and an NMOS driving tube.
6. The drive circuit according to claim 5,
the grid electrode of the PMOS driving tube and the grid electrode of the NMOS driving tube are connected and used as the control end of the driving sub-circuit;
the source electrode of the PMOS driving tube and the drain electrode of the NMOS driving tube are connected and used as the current output end of the driving sub-circuit;
the drain electrode of the PMOS driving tube is used as the power supply input end of the driving sub-circuit, and the source electrode of the NMOS driving tube is used as the power supply output end of the driving sub-circuit.
7. A power module comprising the drive circuit of any one of claims 1 to 6.
8. The smart power module of claim 7, wherein the power module further comprises a power device;
the driving circuit is connected with the power device and used for conducting on-off driving on the power device.
9. The smart power module of claim 8 wherein the power device is an IGBT switching tube or a MOSFET switching tube.
10. An electrical appliance characterized by comprising a power module according to any one of claims 7 to 9.
CN202010137686.4A 2020-03-02 2020-03-02 Drive circuit, power module and electrical equipment Pending CN113364251A (en)

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CN205017287U (en) * 2015-09-18 2016-02-03 江苏中科君芯科技有限公司 High -efficient drive circuit of IGBT
CN107026561A (en) * 2016-02-01 2017-08-08 华润矽威科技（上海）有限公司 Gate driving circuit and method
WO2019078605A1 (en) * 2017-10-18 2019-04-25 한국전기연구원 Gate drive circuit and power switch control apparatus including same

Cited By (1)

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CN117498665A (en) * 2023-09-28 2024-02-02 海信家电集团股份有限公司 Gate driving chip, control method thereof, storage medium and IPM

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